BSS806NE
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
VDS
• N-channel
RDS(on),max
• Enhancement mode
• Ultra Logic level (1.8V rated)
20
V
VGS=2.5 V
57
mW
VGS=1.8 V
82
ID
2.3
A
• ESD protected
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT23
• 100% lead-free; RoHS compliant
3
• Halogen-free according to IEC61249-2-21
1
2
Type
Package
Tape and Reel
Marking
Halogen Free
Packing
BSS806NE
SOT23
H6327: 3000 pcs/ reel
YIs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
2.3
T A=70 °C
1.9
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
9.3
Avalanche energy, single pulse
E AS
I D=2.3 A, R GS=25 W
10.8
Reverse diode dv /dt
dv /dt
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
±8
V
Power dissipation1)
P tot
0.5
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
1C(1kV to 2kV)
260 °C
IEC climatic category; DIN IEC 68-1
Rev 2.01
mJ
55/150/56
page 1
2014-01-16
BSS806NE
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint 1)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D= 250 µA
20
-
-
Gate threshold voltage
V GS(th)
V DS=VGS , I D=11 µA
0.3
0.55
0.75
Drain-source leakage current
I DSS
V DS=20 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=20 V, V GS=0 V,
T j=150 °C
-
-
100
V
mA
Gate-source leakage current
I GSS
V GS=8 V, V DS=0 V
-
-
6
µA
Drain-source on-state resistance
R DS(on)
V GS=1.8 V, I D=1.3 A
-
57
82
mW
V GS=2.5 V, I D=2.3 A
-
41
57
9
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.9 A
S
1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.01
page 2
2014-01-16
BSS806NE
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
370
529
-
118
169
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
20
29
Turn-on delay time
t d(on)
-
7.5
-
Rise time
tr
-
9.9
-
Turn-off delay time
t d(off)
-
12.0
-
Fall time
tf
-
3.7
-
Gate to source charge
Q gs
-
0.55
-
Gate to drain charge
Q gd
-
0.58
-
Gate charge total
Qg
-
1.7
-
Gate plateau voltage
V plateau
-
1.5
-
V
-
-
0.5
A
-
-
9.3
-
0.82
1.1
V
-
11
-
ns
-
3.3
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=2.5 V,
I D=2.3A, R G,ext=6 W
pF
ns
Gate Charge Characteristics
V DD=10 V, I D=2.3 A,
V GS=0 to 2.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.01
T A=25 °C
V GS=0 V, I F=2.3 A,
T j=25 °C
V R=10 V, I F=2.3 A,
di F/dt =100 A/µs
page 3
2014-01-16
BSS806NE
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥2.5 V
2.5
0.5
2.0
0.375
ID [A]
Ptot [W]
1.5
0.25
1.0
0.125
0.5
0
0.0
0
40
80
120
160
0
20
40
60
TA [°C]
80
100
120
140
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
102
103
101
10 µs
0.5
102
100 µs
1 ms
0.2
10 ms
0.1
ID [A]
ZthJA [K/W]
100
10-1
DC
0.05
101
0.02
0.01
single pulse
100
10-2
10-3
10-1
10-1
100
101
102
VDS [V]
Rev 2.01
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
page 4
2014-01-16
BSS806NE
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4
120
1.3 V
2.5 V
1.8 V
1.4 V
1.6 V
100
1.5 V
1.6 V
3
RDS(on) [mW]
80
ID [A]
1.5 V
2
1.8 V
60
2V
1.4 V
40
1.3 V
20
2.5 V
1
1.2 V
0
1.1 V
0
0
0.0
0.4
0.8
1.2
1.6
VDS [V]
1
2.0
2
3
4
6
8
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
4
20
16
3
gfs [S]
ID [A]
12
2
8
150 °C
25 °C
1
4
0
0
0.0
0.5
1.0
1.5
2.0
VGS [V]
Rev 2.01
0
2
4
ID [A]
page 5
2014-01-16
BSS806NE
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V
V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D
100
1.2
80
0.8
98 %
60
VGS(th) [V]
RDS(on) [mW]
98 %
typ
40
typ
0.4
2%
0
20
0
-0.4
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
101
Ciss
25 °C
100
150 °C, 98%
IF [A]
C [pF]
Coss
102
10-1
150 °C
25 °C, 98%
10-2
Crss
101
10-3
0
5
10
15
20
VDS [V]
Rev 2.01
0
0.4
0.8
1.2
1.6
VSD [V]
page 6
2014-01-16
BSS806NE
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=2.3 A pulsed
parameter: T j(start)
parameter: V DD
101
5
4.5
4
3.5
100
25 °C
VGS [V]
IAV [A]
3
100 °C
10 V
16 V
2.5
4V
2
125 °C
10-1
100
101
102
1.5
103
1
0.5
0
0.0
0.5
tAV [µs]
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
V GS
24
Qg
23
VBR(DSS) [V]
22
21
20
V gs(th)
19
18
Q g(th)
17
Q sw
Q gs
16
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev 2.01
page 7
2014-01-16
BSS806NE
SOT23
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev 2.01
page 8
2014-01-16
BSS806NE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.01
page 9
2014-01-16