BSS83PH6327XTSA1

BSS 83 P SIPMOS  Small-Signal-Transistor Features Product Summary · P-Channel Drain source voltage VDS · Drain-source on-state resistance RDS(on) Continuous drain current ID Enhancement mode · Avalanche rated · Logic Level -60 V 2 W -0.33 A 3 · dv/dt rated 2 • Qualified according to AEC Q101 1 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel BSS 83 P PG-SOT-23 H6327: 3000pcs/r. YAs Marking Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Pin 1 PIN 2 PIN 3 G S D Value ID Continuous drain current -0.33 T A = 70 °C -0.27 I D puls Unit A T A = 25 °C Pulsed drain current VPS05161 -1.32 T A = 25 °C Avalanche energy, single pulse EAS 9.5 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.036 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55...+150 °C I D = -0.33 A , V DD = -25 V, RGS = 25 W mJ kV/µs I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C T j , T stg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class; JESD22-A114-HBM Class 0 Rev. 1.5 Page 1 2012-03-30 BSS 83 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 150 @ min. footprint - - 350 @ 6 cm 2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W ( Pin 3 ) RthJA SMD version, device on PCB: Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -80 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 2 3 W RDS(on) - 1.4 2 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -4.5 V, I D = -0.27 A Drain-source on-state resistance VGS = -10 V, I D = -0.33 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Page 2 2012-03-30 BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs 0.24 0.47 - S Input capacitance Ciss - 62 78 pF Coss - 19 24 Crss - 7 9 t d(on) - 23 35 tr - 71 106 t d(off) - 56 70 tf - 61 76 VDS³2*I D*RDS(on)max , ID = -0.27 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rev. 1.5 Page 3 2012-03-30 BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Unit Values min. typ. max. Q gs - 0.12 0.18 Q gd - 1.1 1.65 Qg - 2.38 3.57 V(plateau) - -2.94 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -0.33 A Gate to drain charge VDD = -48 , ID = -0.33 A Gate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -0.33 A Parameter Symbol Values Unit min. typ. max. IS - - -0.33 ISM - - -1.32 VSD - -0.84 -1.1 V trr - 59.4 89 ns Qrr - 37.5 56 nC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -0.33 Reverse recovery time VR = -30 V, IF=I S , di F/dt = 80 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 80 A/µs Rev. 1.5 Page 4 2012-03-30 BSS 83 P Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS ³ 10 V BSS 83 P BSS 83 P 0.38 -0.36 W A 0.32 -0.28 -0.24 0.24 ID Ptot 0.28 -0.20 0.20 -0.16 0.16 0.12 -0.12 0.08 -0.08 0.04 -0.04 0.00 0 20 40 60 80 100 120 °C 0.00 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 1 160 BSS 83 P 10 3 A BSS 83 P K/W tp = 88.0µs ID = RD -10 100 µs /I D S( VD 10 2 S Z thJC -10 0 ) on 1 ms -1 10 1 D = 0.50 10 ms 0.20 0.10 -10 -2 10 0 0.05 single pulse 0.02 DC -10 -3 -1 -10 -10 0 -10 1 V 0.01 -10 2 VDS Rev. 1.5 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 2012-03-30 BSS 83 P Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS BSS 83 P A BSS 83 P 6.5 Ptot = 0W W jik hglf e d VGS [V] a -2.5 -0.60 ID c -0.50 -0.40 -0.30 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 b k -8.0 l -10.0 a b c 5.5 5.0 RDS(on) -0.80 4.5 4.0 3.5 3.0 2.5 2.0 -0.20 d e l f g j h ki 1.5 1.0 -0.10 a VGS [V] = 0.5 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.00 -5.0 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.10 -0.20 -0.30 g h i j -5.5 -6.0 -6.5 -7.0 -0.40 k l -8.0 -10.0 -0.50 A VDS -0.65 ID Typ. transfer characteristics I D= f ( V GS ) VDS³ 2 x I D x RDS(on)max Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs -1.2 0.70 A S 0.60 -1.0 0.55 -0.9 0.50 0.45 gfs ID -0.8 -0.7 0.40 -0.6 0.35 -0.5 0.30 0.25 -0.4 0.20 -0.3 0.15 -0.2 0.10 -0.1 0.0 0.0 0.05 -1.0 -2.0 -3.0 -4.0 V -6.0 VGS Rev. 1.5 0.00 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A -0.70 ID Page 6 2012-03-30 BSS 83 P Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -0.33 A, VGS = -10 V parameter: VGS = VDS , ID = -80 µA BSS 83 P -3.0 5.5 W V V GS(th) RDS(on) 4.5 4.0 3.5 98% -2.0 typ 3.0 -1.5 98% 2.5 2.0 typ 2% -1.0 1.5 1.0 -0.5 0.5 0.0 -60 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 Tj 160 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 pF BSS 83 P A -10 0 C Ciss IF 10 2 Coss 10 1 -10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 V -10 -2 0.0 -35 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev. 1.5 -0.4 Page 7 2012-03-30 BSS 83 P Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.33 A pulsed para.: I D = -0.33 A , VDD = -25 V, RGS = 25 BSS 83 P 10 -16 mJ V 8 -12 VGS E AS 7 6 5 -10 -8 4 0,2 VDS max -6 0,8 VDS max 3 -4 2 -2 1 0 25 45 65 85 105 125 165 °C 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS 83 P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev. 1.5 Page 8 2012-03-30 BSS 83 P Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 Page 8 2012-03-30