BSZ010NE2LS5
MOSFET
OptiMOSTM5Power-Transistor,25V
TSDSON-8FL
(enlarged source interconnection)
Features
•Optimizedforhighperformancebuckconverters
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
25
V
G4
5D
RDS(on),max
1
mΩ
ID
212
A
Qoss
30
nC
QG(0V..4.5V)
21
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ010NE2LS5
PG-TSDSON-8 FL
10NE2L5
-
Final Data Sheet
1
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
212
134
118
32
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=100°C
VGS=4.5V,TA=25°C,
RTHJA=60°C/W2)
-
848
A
TC=25°C
-
-
160
mJ
ID=20A,RGS=25Ω
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
-
69
2.1
W
TC=25°C
TA=25°C,RTHJA=60°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1.8
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area
RthJA
-
-
60
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=16V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.8
1.0
1
1.3
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Gate resistance
RG
-
0.7
1.2
Ω
-
Transconductance
gfs
90
180
-
S
|VDS|≥2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
25
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
3000
3900
pF
VGS=0V,VDS=12V,f=1MHz
Coss
-
1300
1700
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
98
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
12.6
-
ns
VDD=12V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
6
-
ns
VDD=12V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
19.3
-
ns
VDD=12V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
7.2
-
ns
VDD=12V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
6.7
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
4.8
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate to drain charge
Qgd
-
4.1
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Switching charge
Qsw
-
6.1
-
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate charge total
Qg
-
21
29.0
nC
VDD=12V,ID=20A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.3
-
V
VDD=12V,ID=20A,VGS=0to4.5V
Gate charge total1)
Qg
-
44.5
60
nC
VDD=12V,ID=20A,VGS=0to10V
Qoss
-
30
40
nC
VDD=12V,VGS=0V
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
76
A
TC=25°C
-
848
A
TC=25°C
-
0.76
1
V
VGS=0V,IF=20A,Tj=25°C
-
20
-
nC
VR=12V,IF=20A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
70
240
60
200
50
40
ID[A]
Ptot[W]
160
120
30
80
20
40
10
0
0
20
40
60
80
100
120
140
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
10
101
1 µs
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10 µs
2
10
100 µs
100
ZthJC[K/W]
ID[A]
101
10 ms
1 ms
0
10
10-1
DC
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
2.4
10 V
2.8 V
2.8 V
5V
140
4V
2.0
3.5 V
120
3V
3V
1.6
RDS(on)[mΩ]
ID[A]
100
80
60
3.5 V
1.2
4V
4.5 V
5V
0.8
10 V
40
0.4
20
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
10
20
VDS[V]
30
40
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
160
2.4
140
2.0
120
1.6
RDS(on)[mΩ]
ID[A]
100
80
60
150 °C
1.2
25 °C
0.8
40
25 °C
150 °C
0.4
20
0
0
1
2
3
4
5
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0.0
RDS(on)=f(VGS),ID=20A;parameter:Tj
7
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
Diagram10:Typ.gatethresholdvoltage
1.6
2.00
1.4
1.75
1.2
1.50
1.0
1.25
VGS(th)[V]
RDS(on)(normalizedto25°C)
Diagram9:Normalizeddrain-sourceonresistance
0.8
1.00
0.6
0.75
0.4
0.50
0.2
0.25
0.0
-80
-40
0
40
80
120
0.00
-80
160
2500 µA
250 µA
-40
0
Tj[°C]
40
80
120
160
Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V
VGS(th)=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
5
10
15
20
25
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
5V
12 V
20 V
8
101
25 °C
VGS[V]
IAV[A]
6
100 °C
4
125 °C
0
10
2
10-1
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
28
27
VBR(DSS)[V]
26
25
24
23
-80
-40
0
40
80
120
160
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
5PackageOutlines
TSDSON-8-25/-26
j
DIM
A
b
b1
b2
D=D1
D2
D3
D4
E
E4
E6
e
N
L
L1
L2
aaa
F1
F2
F3
F4
F5
F6
F7
F8
F9
MILLIMETERS
MIN
0.90
0.24
0.10
0.24
3.20
2.19
1.54
0.21
3.20
2.01
0.10
0.30
0.40
0.50
m
INCHES
MAX
1.10
0.44
0.30
0.44
3.40
2.39
1.74
0.41
3.40
2.21
0.30
0.65 (BSC)
8
0.51
0.70
0.70
0.25
3.90
2.29
0.31
0.34
0.80
1.00
2.51
1.64
0.50
MIN
0.035
0.009
0.004
0.009
0.126
0.086
0.061
0.008
0.126
0.079
0.004
0.012
0.016
0.020
MAX
0.043
0.017
0.012
0.017
0.134
0.094
0.069
0.016
0.134
0.087
0.012
0.026 (BSC)
8
0.020
0.028
0.028
0.010
0.154
0.090
0.012
0.013
0.031
0.039
0.099
0.065
0.020
DOCUMENT NO.
Z8B00158553
SCALE
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
27-12-2010
REVISION
02
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.2,2020-05-12
OptiMOSTM5Power-Transistor,25V
BSZ010NE2LS5
RevisionHistory
BSZ010NE2LS5
Revision:2020-05-12,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2019-02-04
Release of final version
2.1
2019-05-06
Update "Features"
2.2
2020-05-12
Update current rating
Trademarks
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InfineonTechnologiesAG
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©2020InfineonTechnologiesAG
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Final Data Sheet
11
Rev.2.2,2020-05-12