BSZ017NE2LS5IATMA1

BSZ017NE2LS5I MOSFET OptiMOSTM5Power-MOSFET,25V TSDSON-8FL (enlarged source interconnection) Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.7 mΩ ID 134 A QOSS 17.5 nC QG(0V..4.5V) 10.5 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ017NE2LS5I PG-TSDSON-8 FL 17NE25I - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 134 85 115 73 27 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 536 A TC=25°C - - 20 A TC=25°C EAS - - 40 mJ ID=20A,RGS=25Ω Gate source voltage VGS -16 - 16 V - Power dissipation Ptot - - 50 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 2.5 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 0.5 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.9 1.45 2.3 1.7 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG - 0.85 1.4 Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1500 2000 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 750 1000 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 60 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 20 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=12V,ID=30A,VGS=0to4.5V 2.4 - nC VDD=12V,ID=30A,VGS=0to4.5V - 2.3 - nC VDD=12V,ID=30A,VGS=0to4.5V Qsw - 3.5 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 10.5 14 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 22 30 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 9.8 - nC VDS=0.1V,VGS=0to4.5V Qoss - 17.5 24 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 3.7 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 50 A TC=25°C Diode pulse current IS,pulse - - 536 A TC=25°C Diode forward voltage VSD - 0.51 0.65 V VGS=0V,IF=7A,Tj=25°C Reverse recovery charge Qrr - 12 - nC VR=12V,IF=IS,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 60 140 120 50 100 80 ID[A] Ptot[W] 40 30 60 20 40 10 0 20 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 2 10 100 10 µs 100 µs 0.5 0.2 ZthJC[K/W] ID[A] 0.1 1 ms 1 10 10 ms DC 0.05 10 0.02 -1 0.01 single pulse 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 3.0 10 V 3.2 V 5V 2.5 3.5 V 3.5 V 300 4.5 V RDS(on)[mΩ] 4V ID[A] 4V 2.0 3.2 V 200 3V 4.5 V 5V 7V 1.5 8V 10 V 1.0 100 2.8 V 0.5 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 400 160 300 ID[A] gfs[S] 120 200 80 150 °C 40 0 100 25 °C 0 1 2 3 4 5 0 0 VGS[V] 100 150 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 2.5 2.0 2.0 1.5 1.5 typ VGS(th)[V] RDS(on)[mΩ] 10 mA 1.0 0.5 1.0 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 103 102 IF[A] C[pF] Coss 101 102 Crss 100 101 0 5 10 15 20 25 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 20 V 8 VGS[V] IAV[A] 25 °C 101 100 °C 125 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -3 10 125 °C 100 °C 10-4 IDSS[A] 75 °C 10-5 25 °C 10-6 0 5 10 15 20 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I 5PackageOutlines TSDSON-8-25/-26 j DIM A b b1 b2 D=D1 D2 D3 D4 E E4 E6 e N L L1 L2 aaa F1 F2 F3 F4 F5 F6 F7 F8 F9 MILLIMETERS MIN 0.90 0.24 0.10 0.24 3.20 2.19 1.54 0.21 3.20 2.01 0.10 0.30 0.40 0.50 m INCHES MAX 1.10 0.44 0.30 0.44 3.40 2.39 1.74 0.41 3.40 2.21 0.30 0.65 (BSC) 8 0.51 0.70 0.70 0.25 3.90 2.29 0.31 0.34 0.80 1.00 2.51 1.64 0.50 MIN 0.035 0.009 0.004 0.009 0.126 0.086 0.061 0.008 0.126 0.079 0.004 0.012 0.016 0.020 MAX 0.043 0.017 0.012 0.017 0.134 0.094 0.069 0.016 0.134 0.087 0.012 0.026 (BSC) 8 0.020 0.028 0.028 0.010 0.154 0.090 0.012 0.013 0.031 0.039 0.099 0.065 0.020 DOCUMENT NO. Z8B00158553 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 27-12-2010 REVISION 02 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-06-17 OptiMOSTM5Power-MOSFET,25V BSZ017NE2LS5I RevisionHistory BSZ017NE2LS5I Revision:2020-06-17,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-08-17 Release of final version 2.1 2020-06-17 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-06-17