BSZ024N04LS6
MOSFET
OptiMOSTM6Power-Transistor,40V
PG-TSDSON-8FL
Features
8
•Optimizedforsynchronousapplication
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
1
2
7
6
5
5
4
3
3
4
2
Value
Unit
VDS
40
V
RDS(on),max
2.4
mΩ
Gate
Pin 4
130
A
Qoss
28
nC
QG(0V..10V)
25
nC
QG(0V..4.5V)
12.3
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ024N04LS6
PG-TSDSON-8 FL
24N04L6
-
1)
8
1
*1
*1: Internal body diode
ID
7
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter
6
Source
Pin 1-3
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
130
92
109
77
24
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RTHJA=60°C/W2)
-
520
A
TA=25°C
-
-
137
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
75
2.5
W
TC=25°C
TA=25°C,RTHJA=60°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current1)
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
2
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area
RthJA
-
-
60
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.3
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.1
2.8
2.4
3.4
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Gate resistance
RG
-
1.1
-
Ω
-
Transconductance
gfs
-
100
-
S
|VDS|≥2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
1800
-
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
570
-
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
19
-
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
7
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
6
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
17
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
3
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
4.7
-
nC
VDD=20V,ID=20A,VGS=0to10V
Qg(th)
-
2.8
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate to drain charge
Qgd
-
3.2
-
nC
VDD=20V,ID=20A,VGS=0to10V
Switching charge
Qsw
-
5.1
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
25
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.7
-
V
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
12.3
-
nC
VDD=20V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
10.6
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
28
-
nC
VDD=20V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definitio
Final Data Sheet
4
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
75
A
TC=25°C
-
520
A
TC=25°C
-
0.79
1
V
VGS=0V,IF=20A,Tj=25°C
trr
-
19
-
ns
VR=20V,IF=20A,diF/dt=400A/µs
Qrr
-
44
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
140
70
120
60
100
80
ID[A]
Ptot[W]
50
40
60
30
40
20
20
10
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
10 µs
102
100 µs
100
ZthJC[K/W]
ID[A]
101
1 ms
DC
100
10 ms
10-1
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
Diagram5:Typ.outputcharacteristics
160
Diagram6:Typ.drain-sourceonresistance
7
3.5 V
4.5 V
3V
10 V
140
6
4V
120
5
5V
80
3V
60
RDS(on)[mΩ]
ID[A]
100
3.5 V
4
4V
3
4.5 V
5V
2
40
10 V
2.8 V
1
20
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
10
20
30
VDS[V]
40
50
60
70
80
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
160
7
140
6
120
5
RDS(on)[mΩ]
ID[A]
100
80
60
175 °C
3
25 °C
2
40
1
20
175 °C
0
4
0
1
25 °C
2
3
4
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=20A;parameter:Tj
7
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
2.4
2.0
1.6
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
1.2
2500 µA
250 µA
0.8
0.4
0.4
0.0
-80
-40
0
40
80
120
160
0.0
-80
200
-40
0
40
Tj[°C]
80
120
160
200
Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
3
102
Coss
102
IF[A]
C[pF]
10
101
Crss
1
10
0
5
10
15
20
25
30
35
40
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8V
20 V
32 V
8
101
25 °C
100 °C
VGS[V]
IAV[A]
6
4
0
10
150 °C
2
10-1
100
101
102
103
tAV[µs]
0
0
4
8
12
16
20
24
28
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
44
43
VBR(DSS)[V]
42
41
40
39
38
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
5PackageOutlines
PACKAGE - GROUP
NUMBER:
REVISION: 03
DIMENSIONS
A
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
aaa
PG-TSDSON-8-U03
DATE: 20.10.2020
MILLIMETERS
MIN.
MAX.
0.90
1.10
0.24
0.44
(0.20)
3.20
3.40
2.19
2.39
1.54
1.74
3.20
3.40
2.01
2.21
0.10
0.30
0.65
0.30
0.50
0.40
0.60
0.50
0.70
0.06
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm
Final Data Sheet
10
Rev.2.2,2021-02-22
OptiMOSTM6Power-Transistor,40V
BSZ024N04LS6
RevisionHistory
BSZ024N04LS6
Revision:2021-02-22,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-06-04
Release of final version
2.1
2020-05-12
Update current rating
2.2
2021-02-22
Update package drawing
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.2,2021-02-22