BSZ025N04LSATMA1

BSZ025N04LS MOSFET OptiMOSTMPower-MOSFET,40V TSDSON-8FL(S3O8) Features •Optimizedforsynchronousrectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.5 mΩ ID 126 A QOSS 33 nC QG(0V..10V) 37 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ025N04LS PG-TSDSON-8 FL 025N04L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 126 80 111 70 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 504 A TC=25°C - - 20 A TC=25°C EAS - - 130 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.4 2.0 3.2 2.5 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance1) RG - 1.1 2.2 Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2630 3680 pF VGS=0V,VDS=20V,f=1MHz Coss - 750 1050 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 60 120 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 7 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 27 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 6.3 - nC VDD=20V,ID=20A,VGS=0to10V Qg(th) - 4.2 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 6.0 8.4 nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 8.1 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total Qg - 37 52 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 19 27 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 32 - nC VDS=0.1V,VGS=0to10V Qoss - 33 46 nC VDD=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 69 A TC=25°C - 504 A TC=25°C - 0.8 1 V VGS=0V,IF=20A,Tj=25°C trr - 24 48 ns VR=20V,IF=20A,diF/dt=400A/µs Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 140 70 120 60 100 80 ID[A] Ptot[W] 50 40 60 30 40 20 20 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 160 101 10 102 10 µs 1 µs 100 0.5 0.2 ZthJC[K/W] 100 µs ID[A] 140 TC[°C] 1 ms 101 10 ms DC 0.1 0.05 10-1 0.02 0.01 single pulse 0 10 10-1 10-1 10 100 101 102 -2 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram5:Typ.outputcharacteristics 160 5V Diagram6:Typ.drain-sourceonresistance 5 4V 10 V 3.2 V 3.5 V 2.8 V 4.5 V 140 3V 4 3.2 V 120 3V 3.5 V RDS(on)[mΩ] ID[A] 100 80 2.8 V 60 3 4V 4.5 V 5V 2 10 V 40 1 20 0 0.0 0.2 0.4 0.6 0.8 0 1.0 0 40 VDS[V] 80 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 120 120 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 80 40 160 30 40 80 40 150 °C 0 120 ID[A] 0 1 2 25 °C 3 4 0 0 VGS[V] 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 2.5 4 2.0 1.5 max 2 VGS(th)[V] RDS(on)[mΩ] 3 typ 1 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 Crss 102 IF[A] C[pF] 103 101 0 10 20 101 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 32 V 25 °C 101 VGS[V] IAV[A] 8 100 °C 125 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-11-12 OptiMOSTMPower-MOSFET,40V BSZ025N04LS RevisionHistory BSZ025N04LS Revision:2020-11-12,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-27 Rev. 2.1 2.2 2020-08-14 Update current rating 2.3 2020-11-12 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-11-12