BSZ028N04LSATMA1

BSZ028N04LS MOSFET OptiMOSTMPower-MOSFET,40V TSDSON-8FL(S3O8) Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.8 mΩ ID 114 A QOSS 28 nC QG(0V..10V) 32 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ028N04LS PG-TSDSON-8 FL 028N04L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 114 72 98 62 21 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 456 A TC=25°C - - 100 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 63 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - 1.2 2 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VGS=4.5V,TC=100°C - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.2 2.7 2.8 3.8 mΩ VGS=10V,ID=20A VGS=4.5V,ID=20A Gate resistance1) RG - 0.9 1.8 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2300 3220 pF VGS=0V,VDS=20V,f=1MHz Coss - 640 900 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 52 104 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 37 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 5.5 - nC VDD=20V,ID=20A,VGS=0to10V Qg(th) - 3.6 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 5.1 7.1 nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 6.9 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total Qg - 32 45 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 16 22 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 13 - nC VDS=0.1V,VGS=0to4.5V Qoss - 28 39 nC VDD=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 63 A TC=25°C - 456 A TC=25°C - 0.81 1 V VGS=0V,IF=20A,Tj=25°C trr - 24 48 ns VR=20V,IF=20A,diF/dt=400A/µs Qrr - 57 - nC VR=20V,IF=20A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 120 60 100 50 40 ID[A] Ptot[W] 80 60 30 40 20 20 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 10 µs 1 µs 0.5 100 0.2 100 µs ZthJC[K/W] ID[A] 0.1 1 ms 101 10 ms DC 0.05 10-1 0.02 0.01 single pulse 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 7 5V 10 V 140 4V 6 4.5 V 3.5 V 2.8 V 3.2 V 3V 3.2 V 120 5 100 RDS(on)[mΩ] ID[A] 3V 80 60 3.5 V 4V 3 4.5 V 5V 2.8 V 10 V 2 40 1 20 0 4 0.0 0.2 0.4 0.6 0.8 0 1.0 0 40 VDS[V] 80 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 120 120 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 80 40 160 30 40 80 40 25 °C 150 °C 0 120 ID[A] 0 1 2 3 4 0 0 VGS[V] 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 2.5 5 2.0 4 1.5 VGS(th)[V] RDS(on)[mΩ] max 3 1.0 typ 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 101 Crss 0 10 20 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 32 V 25 °C 101 VGS[V] IAV[A] 8 100 °C 6 125 °C 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-12-23 OptiMOSTMPower-MOSFET,40V BSZ028N04LS RevisionHistory BSZ028N04LS Revision:2020-12-23,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2016-06-09 Insert max values and update footnotes 2.2 2020-08-14 Update current rating 2.3 2020-12-23 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-12-23