MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
1Description
TSDSON-8FL
(enlarged source interconnection)
Features
•Optimizedforhighperformancebuckconverters
•VeryLowFOMQOSSforHighFrequencySMPS
•LowFOMSWforHighFrequencySMPS
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
3.1
mΩ
ID
40
A
QOSS
9.1
nC
QG(0V..4.5V)
6.3
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ031NE2LS5
PG-TSDSON-8 FL
31NE2L5
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
40
40
40
40
19
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=4.5V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
20
A
TC=25°C
EAS
-
-
20
mJ
ID=20A,RGS=25Ω
Gate source voltage
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
30
2.1
-
W
TC=25°C
TA=25°C,RthJA=60K/W
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area1)
Values
Min.
Typ.
Max.
RthJC
-
-
4.1
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.2
2.6
3.9
3.1
mΩ
VGS=4.5V,ID=20A
VGS=10V,ID=20A
Gate resistance
RG
-
0.75
1.2
Ω
-
Transconductance
gfs
46
93
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
25
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
910
1230
pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
390
530
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
38
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
3
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
3
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
15
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
2
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Input capacitance1)
1)
1)
Defined by design. Not subject to producction test
Final Data Sheet
5
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Unit
Note/TestCondition
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
1.5
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
-
1.4
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Qsw
-
2.3
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
6.3
8.5
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.5
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
13.6
18.3
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
5.9
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
9.1
12.3
nC
VDD=12V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
2.3
Gate charge at threshold
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Min.
Typ.
Max.
IS
-
-
30
A
TC=25°C
Diode pulse current
IS,pulse
-
-
160
A
TC=25°C
Diode forward voltage
VSD
-
0.82
1
V
VGS=0V,IF=20A,Tj=25°C
Reverse recovery charge
Qrr
-
12
-
nC
VR=15V,IF=30A,diF/dt=400A/µs
1)
2)
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to producction test
Final Data Sheet
6
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
40
45
40
10 V
4.5 V
35
30
ID[A]
Ptot[W]
30
20
25
20
15
10
10
5
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);parameter:VGS
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
0.5
10 µs
102
1 ms
ZthJC[K/W]
ID[A]
100
100 µs
1
10
10 ms
DC
0.1
0.05
0.02
10
-1
0
10
10-1
10-1
0.2
0.01
single pulse
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
300
5
250
4 3.5 V
10 V
4.5 V
4V
ID[A]
5V
RDS(on)[mΩ]
200
3.5 V
150
3.2 V
100
6V
7V
10 V
8V
2
3V
1
2.8 V
50
0
4.5 V
5V
3
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
250
160
200
120
150
ID[A]
gfs[S]
200
80
100
40
0
150 °C
0
1
50
25 °C
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
5
2.5
4
2.0
1.5
VGS(th)[V]
RDS(on)[mΩ]
3
typ
2
1
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
5
10
15
20
25
100
0.0
0.2
VDS[V]
0.6
0.8
1.0
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
9
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
12 V
10
5V
20 V
VGS[V]
IAV[A]
8
25 °C
101
100 °C
6
125 °C
4
2
100
100
101
102
103
0
0
tAV[µs]
5
10
15
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
28
27
26
VBR(DSS)[V]
25
24
23
22
21
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2015-08-06
OptiMOSTM5Power-MOSFET,25V
BSZ031NE2LS5
RevisionHistory
BSZ031NE2LS5
Revision:2015-08-06,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-08-06
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.0,2015-08-06