BSZ039N06NS
MOSFET
OptiMOSTMPower-Transistor,60V
TSDSON-8FL
(enlarged source interconnection)
Features
•OptimizedforhighperformanceSMPS,e.g.sync.Rec
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
60
V
G4
5D
RDS(on),max
3.9
mΩ
ID
40
A
Qoss
32
nC
QG(0V..10V)
27
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ039N06NS
PG-TSDSON-8 FL
039N06N
-
Final Data Sheet
1
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
40
40
18
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,
RTHJA=60°C/W1)
-
160
A
TC=25°C
-
-
130
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.1
W
TC=25°C
TA=25°C,RTHJA=60°C/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area
RthJA
-
-
60
°C/W -
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.8
3.3
V
VDS=VGS,ID=36µA
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.2
4.6
3.9
6.0
mΩ
VGS=10V,ID=20A
VGS=6V,ID=5A
Gate resistance
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
27
55
-
S
|VDS|≥2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
2000
2500
pF
VGS=0V,VDS=30V,f=1MHz
Coss
-
490
620
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
22
44
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
7
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
19
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
6
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
8.5
-
nC
VDD=30V,ID=20A,VGS=0to10V
Qg(th)
-
5.5
-
nC
VDD=30V,ID=20A,VGS=0to10V
Gate to drain charge
Qgd
-
4.9
7.4
nC
VDD=30V,ID=20A,VGS=0to10V
Switching charge
Qsw
-
8.0
-
nC
VDD=30V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
27
34
nC
VDD=30V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=30V,ID=20A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
24
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
32
40
nC
VDD=30V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
40
A
TC=25°C
-
160
A
TC=25°C
-
0.84
1
V
VGS=0V,IF=20A,Tj=25°C
trr
-
33
-
ns
VR=30V,IF=20A,diF/dt=100A/µs
Qrr
-
33
-
nC
VR=30V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
70
120
package limit
silicon limit
60
100
50
40
ID[A]
Ptot[W]
80
60
30
40
20
20
10
0
0
20
40
60
80
100
120
140
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
10 ms
10 µs
DC
100
100 µs
ZthJC[K/W]
ID[A]
101
1 ms
100
10-1
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
10
7V
140
8V
5V
10 V
8
6V
120
80
5V
60
RDS(on)[mΩ]
ID[A]
100
6
6V
4
7V
8V
10 V
40
2
4.5 V
20
0
0
1
2
3
4
0
5
0
10
20
VDS[V]
30
40
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
160
12
140
10
120
8
RDS(on)[mΩ]
ID[A]
100
80
60
6
150 °C
4
25 °C
40
2
20
150 °C
0
0
1
2
3
25 °C
4
5
6
7
VGS[V]
0
2
4
6
8
10
12
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=20A;parameter:Tj
7
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
3.5
3.0
2.5
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
2.0
360 µA
36 µA
1.5
1.0
0.4
0.5
0.0
-80
-40
0
40
80
120
0.0
-80
160
-40
0
Tj[°C]
40
80
120
160
Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V
VGS(th)=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
Coss
102
IF[A]
102
C[pF]
103
101
Crss
1
10
0
10
20
30
40
50
60
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
12 V
30 V
48 V
8
101
25 °C
6
VGS[V]
IAV[A]
100 °C
4
0
10
125 °C
2
10-1
100
101
102
103
tAV[µs]
0
0
4
8
12
16
20
24
28
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
65
64
63
VBR(DSS)[V]
62
61
60
59
58
57
-80
-40
0
40
80
120
160
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2019-02-08
OptiMOSTMPower-Transistor,60V
BSZ039N06NS
RevisionHistory
BSZ039N06NS
Revision:2019-02-08,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2019-02-08
Release of final version
Trademarks
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Publishedby
InfineonTechnologiesAG
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©2018InfineonTechnologiesAG
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Final Data Sheet
11
Rev.2.0,2019-02-08
