BSZ039N06NSATMA1

BSZ039N06NS MOSFET OptiMOSTMPower-Transistor,60V TSDSON-8FL (enlarged source interconnection) Features •OptimizedforhighperformanceSMPS,e.g.sync.Rec •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 60 V G4 5D RDS(on),max 3.9 mΩ ID 102 A Qoss 32 nC QG(0V..10V) 27 nC Type/OrderingCode Package Marking RelatedLinks BSZ039N06NS PG-TSDSON-8 FL 039N06N - Final Data Sheet 1 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 102 65 18 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=60°C/W2) - 408 A TA=25°C - - 130 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RTHJA=60°C/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.1 1.8 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 60 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=36µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.2 4.6 3.9 6.0 mΩ VGS=10V,ID=20A VGS=6V,ID=5A Gate resistance RG - 1.6 2.4 Ω - Transconductance gfs 27 55 - S |VDS|≥2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2000 2500 pF VGS=0V,VDS=30V,f=1MHz Coss - 490 620 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 22 44 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 6 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 8.5 - nC VDD=30V,ID=20A,VGS=0to10V Qg(th) - 5.5 - nC VDD=30V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 4.9 7.4 nC VDD=30V,ID=20A,VGS=0to10V Switching charge Qsw - 8.0 - nC VDD=30V,ID=20A,VGS=0to10V Gate charge total Qg - 27 34 nC VDD=30V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=30V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to10V Qoss - 32 40 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition. Final Data Sheet 4 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 69 A TC=25°C - 408 A TC=25°C - 0.84 1 V VGS=0V,IF=20A,Tj=25°C trr - 33 - ns VR=30V,IF=20A,diF/dt=100A/µs Qrr - 33 - nC VR=30V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 120 60 100 50 40 ID[A] Ptot[W] 80 60 30 40 20 20 10 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 102 10 µs 100 100 µs 101 ZthJC[K/W] ID[A] DC 10 ms 1 ms 100 10-1 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 10 7V 140 8V 5V 10 V 8 6V 120 80 5V 60 RDS(on)[mΩ] ID[A] 100 6 6V 4 7V 8V 10 V 40 2 4.5 V 20 0 0 1 2 3 4 0 5 0 10 20 VDS[V] 30 40 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 160 12 140 10 120 8 RDS(on)[mΩ] ID[A] 100 80 60 6 150 °C 4 25 °C 40 2 20 150 °C 0 0 1 2 3 25 °C 4 5 6 7 VGS[V] 0 2 4 6 8 10 12 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=20A;parameter:Tj 7 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.5 3.0 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 360 µA 36 µA 1.5 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 0.0 -80 160 -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th)=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C. max 150 °C 150 °C. max Ciss Coss 102 IF[A] 102 C[pF] 103 101 Crss 1 10 0 10 20 30 40 50 60 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 101 25 °C 6 VGS[V] IAV[A] 100 °C 4 0 10 125 °C 2 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 24 28 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS 5PackageOutlines TSDSON-8-25/-26 j DIM A b b1 b2 D=D1 D2 D3 D4 E E4 E6 e N L L1 L2 aaa F1 F2 F3 F4 F5 F6 F7 F8 F9 MILLIMETERS MIN 0.90 0.24 0.10 0.24 3.20 2.19 1.54 0.21 3.20 2.01 0.10 0.30 0.40 0.50 MAX 1.10 0.44 0.30 0.44 3.40 2.39 1.74 0.41 3.40 2.21 0.30 0.65 (BSC) 8 0.51 0.70 0.70 0.25 3.90 2.29 0.31 0.34 0.80 1.00 2.51 1.64 0.50 m INCHES MIN 0.035 0.009 0.004 0.009 0.126 0.086 0.061 0.008 0.126 0.079 0.004 0.012 0.016 0.020 MAX 0.043 0.017 0.012 0.017 0.134 0.094 0.069 0.016 0.134 0.087 0.012 0.026 (BSC) 8 0.020 0.028 0.028 0.010 0.154 0.090 0.012 0.013 0.031 0.039 0.099 0.065 0.020 DOCUMENT NO. Z8B00158553 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 27-12-2010 REVISION 02 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-11-30 OptiMOSTMPower-Transistor,60V BSZ039N06NS RevisionHistory BSZ039N06NS Revision:2020-11-30,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-02-08 Release of final version 2.1 2020-11-30 Update Max Id current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-11-30