BSZ040N06LS5
MOSFET
OptiMOSTMPower-Transistor,60V
TSDSON-8FL
(enlarged source interconnection)
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
S1
8D
VDS
60
V
S2
7D
RDS(on),max
4.0
mΩ
S3
6D
ID
40
A
G4
5D
QOSS
32
nC
QG(0V..4.5V)
18
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ040N06LS5
PG-TSDSON-8 FL
040N06L
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
40
40
17
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
117
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.1
W
TC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
Device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.7
2.3
V
VDS=VGS,ID=36µA
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.3
4.4
4.0
5.6
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=10A
Gate resistance1)
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
32
65
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
1.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
2400
3100
pF
VGS=0V,VDS=30V,f=1MHz
Coss
-
500
650
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
25
44
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
8.5
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
4.6
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
25.6
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
4.8
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
6.6
-
nC
VDD=30V,ID=20A,VGS=0to4.5V
Qg(th)
-
3.9
-
nC
VDD=30V,ID=20A,VGS=0to4.5V
Gate to drain charge
Qgd
-
5.3
8.0
nC
VDD=30V,ID=20A,VGS=0to4.5V
Switching charge
Qsw
-
8.0
-
nC
VDD=30V,ID=20A,VGS=0to4.5V
Gate charge total
Qg
-
18
22
nC
VDD=30V,ID=20A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.7
-
V
VDD=30V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
32
42
nC
VDS=0.1V,VGS=0to10V
Qoss
-
32
42
nC
VDD=30V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
40
A
TC=25°C
-
160
A
TC=25°C
-
0.80
1.2
V
VGS=0V,IF=20A,Tj=25°C
trr
-
24
48
ns
VR=30V,IF=20A,diF/dt=100A/µs
Qrr
-
11
22
nC
VR=30V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
70
40
60
30
ID[A]
Ptot[W]
50
40
20
30
20
10
10
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
175
101
10
102
1 µs
10 µs
1 ms
100
ZthJC[K/W]
ID[A]
150
TC[°C]
100 µs
1
10
DC
10 ms
0.5
0.2
0.1
10-1
0.05
100
0.02
0.01
10-1
10-1
100
101
102
10-2
single pulse
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
10
10 V
5V
140
4.5 V
8
120
4V
RDS(on)[mΩ]
100
ID[A]
3.5 V
80
60
4V
4.5 V
5V
4
5.5 V
6V
3.2 V
40
7V
10 V
3V
20
0
6
2
2.8 V
0.0
0.5
1.0
1.5
0
2.0
0
40
80
VDS[V]
120
160
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
140
140
120
120
100
100
gfs[S]
ID[A]
80
80
60
60
40
40
150 °C
20
0
20
25 °C
0
2
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
8
3
7
6
2
max
360 µA
VGS(th)[V]
RDS(on)[mΩ]
5
4
typ
36 µA
3
1
2
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25°C max
150°C max
Ciss
IF[A]
102
C[pF]
103
Coss
102
101
Crss
101
0
20
40
60
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
9
8
30 V
101
7
25 °C
12 V
100 °C
48 V
6
IAV[A]
VGS[V]
125 °C
5
4
0
10
3
2
1
10-1
100
101
102
103
0
0
5
tAV[µs]
10
15
20
25
30
35
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
70
66
VBR(DSS)[V]
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.1,2016-08-10
OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
RevisionHistory
BSZ040N06LS5
Revision:2016-08-10,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-04-21
Release of final version
2.1
2016-08-10
Update in Qrr and trr
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PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
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©2016InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.1,2016-08-10