BSZ050N03MSGATMA1

BSZ050N03MSG MOSFET OptiMOSª3M-SeriesPower-MOSFET,V S3O8 Features •Optimizedfor5Vdriverapplication(Notebook,VGA,POL) •LowFOMSWforHighFrequencySMPS •100%avalanchetested •N-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •QualifiedaccordingtoJEDEC1)fortargetapplications •Superiorthermalresistance •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 30 V G4 5D RDS(on),max,VGS=10V 4.5 mΩ RDS(on),max,VGS=4.5V 5.7 mΩ ID 80 A Type/OrderingCode Package Marking RelatedLinks BSZ050N03MS G PG-TSDSON-8 050N03M - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 80 51 71 45 15 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=60K/W2) - 320 A TC=25°C - - 20 A TC=25°C EAS - - 70 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 48 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 2.5 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 4.6 3.8 5.7 4.5 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.7 1.4 2.5 Ω - Transconductance gfs 38 75 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2700 3600 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 800 1100 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 55 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 6.7 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 4.2 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 3.2 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold1) Values Min. Typ. Max. Qgs - 7.8 10 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 4.2 5.6 nC VDD=15V,ID=30A,VGS=0to4.5V Qgd - 3.8 6.2 nC VDD=15V,ID=30A,VGS=0to4.5V 1) Qsw - 7.3 11 nC VDD=15V,ID=30A,VGS=0to4.5V 1) Gate charge total Qg - 17 22 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.9 - V VDD=15V,ID=30A,VGS=0to4.5V Qg - 34 46 - VDD=15V,ID=30A,VGS=0to10V Qg(sync) - 14 19 nC VDS=0.1V,VGS=0to4.5V Qoss - 21 28 - VDD=15V,VGS=0V 1) Gate to drain charge Switching charge Gate charge total1) 1) Gate charge total, sync. FET 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery charge 1) Values Unit Note/TestCondition 45 A TC=25°C - 320 A TC=25°C - 0.83 1.1 V VGS=0V,IF=20A,Tj=25°C - - 20 nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Qrr Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 60 100 50 80 10 V 40 4.5 V ID[A] Ptot[W] 60 30 40 20 20 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 0.5 100 µs 100 0.2 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 0.1 0.05 10-1 0.02 0.01 100 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 180 10 4.5 V 5V 10 V 150 8 4V 3V 3.2 V RDS(on)[mΩ] ID[A] 120 90 3.5 V 6 3.5 V 4V 5V 6V 10 V 4 4.5 V 60 3.2 V 2 30 3V 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 180 160 150 120 gfs[S] ID[A] 120 90 80 60 40 30 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 9 2.4 8 2.0 7 1.6 5 98 % 4 typ VGS(th)[V] RDS(on)[mΩ] 6 3 1.2 0.8 2 0.4 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 101 125 °C VGS[V] IAV[A] 8 25 °C 100 °C 24 V 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG 5PackageOutlines Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,V BSZ050N03MSG RevisionHistory BSZ050N03MS G Revision:2020-07-21,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-07-21 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2020-07-21