BSZ058N03LSG

BSZ058N03LSG MOSFET OptiMOSª3Power-MOSFET,30V S3O8 Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalancherated •Pb-freeplating;RoHScompliant;HalogenFree •Halogen-freeaccordingtoIEC61249-2-21 Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 5.8 mΩ ID 71 A Gate Pin 4 *1 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package Marking RelatedLinks BSZ058N03LS G PG-TSDSON-8 058N03L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 71 45 57 36 15 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 284 A TC=25°C - - 20 A TC=25°C EAS - - 55 mJ ID=20A,RGS=25Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=40A,VDS=24V,di/dt=200A/µs, Tj,max=150°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 45 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 2.8 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.1 4.8 8.9 5.8 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.6 1.3 2.3 Ω - Transconductance gfs 36 71 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 1800 2400 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 690 920 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 36 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 4.6 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 3.6 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 3.2 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 5.5 7.4 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 2.8 3.7 nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 2.5 4.2 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 5.3 7.9 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 11 14 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.2 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 22 30 - VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 9 13 nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 18 24 - VDD=15V,VGS=0V 1) 1) 1) 2) Defined by design. Not subjected to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 41 A TC=25°C - 284 A TC=25°C - 0.83 1.1 V VGS=0V,IF=20A,Tj=25°C - - 10 nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 80 70 40 60 50 ID[A] Ptot[W] 30 20 40 30 20 10 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 10 µs 0.5 10 0.2 0.1 0.05 0.02 0.01 ZthJC[K/W] ID[A] 100 µs 0 DC 1 10 1 ms 10 ms single pulse 10-1 100 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 14 5V 12 10 V 4.5 V 120 RDS(on)[mΩ] ID[A] 4V 80 40 0 3.5 V 10 1 4.5 V 3.2 V 2 0 3 5V 10 V 4 2 4V 6 3.5 V 3V 2.8 V 0 8 11.5 V 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 25 °C150 °C 120 gfs[S] ID[A] 120 80 40 0 80 40 0 1 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 10 2.5 8 2.0 98 % 1.5 VGS(th)[V] RDS(on)[mΩ] 6 typ 4 2 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C. max 150 °C 150 °C. max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 100 0.00 0.50 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.00 1.50 2.00 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 6V 15 V 24 V 10 8 VGS[V] IAV[A] 25 °C 1 10 125 °C 100 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG 5PackageOutlines Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.2,2022-06-14 OptiMOSª3Power-MOSFET,30V BSZ058N03LSG RevisionHistory BSZ058N03LS G Revision:2022-06-14,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2021-06-04 Update Max Id current rating 2.2 2022-06-14 Update switch symbol Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.2,2022-06-14