BSZ063N04LS6
MOSFET
OptiMOSTM6Power-Transistor,40V
TSDSON-8FL
(enlarged source interconnection)
Features
•Optimizedforsynchronousapplication
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
6.3
mΩ
ID
40
A
Qoss
10.2
nC
QG(0V..10V)
9.5
nC
QG(0V..4.5V)
4.6
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ063N04LS6
PG-TSDSON-8 FL
63N04L6
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
40
40
40
34
15
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,
RTHJA=60°C/W1)
-
160
A
TC=25°C
-
-
25
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
38
2.5
W
TC=25°C
TA=25°C,RTHJA=60°C/W1)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
4
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area
RthJA
-
-
60
°C/W -
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.3
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
5.1
7.0
6.3
8.8
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Gate resistance
RG
-
2.3
-
Ω
-
Transconductance
gfs
-
64
-
S
|VDS|≥2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
650
-
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
210
-
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
12
-
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
3
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
1
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
10
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
2
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
1.9
-
nC
VDD=20V,ID=20A,VGS=0to10V
Qg(th)
-
1.0
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate to drain charge
Qgd
-
1.3
-
nC
VDD=20V,ID=20A,VGS=0to10V
Switching charge
Qsw
-
2.2
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
9.5
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.9
-
V
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
4.6
-
nC
VDD=20V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
3.9
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
10.2
-
nC
VDD=20V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
38
A
TC=25°C
-
160
A
TC=25°C
-
0.85
1
V
VGS=0V,IF=20A,Tj=25°C
trr
-
13
-
ns
VR=20V,IF=20A,diF/dt=400A/µs
Qrr
-
21
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
40
70
package limit
silicon limit
35
60
30
50
40
ID[A]
Ptot[W]
25
20
30
15
20
10
10
5
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
10 µs
10 ms 1 ms
DC
100 µs
ID[A]
ZthJC[K/W]
101
100
100
10-1
10-2
10-1
100
101
102
10-1
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
Diagram5:Typ.outputcharacteristics
160
16
4.5 V
3V
3.5 V
10 V 5 V
140
14
4V
120
12
100
10
80
3.5 V
60
RDS(on)[mΩ]
ID[A]
Diagram6:Typ.drain-sourceonresistance
4V
8
4.5 V
5V
6
10 V
40
4
3V
20
2
2.8 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
10
20
30
VDS[V]
40
50
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
160
80
16
25 °C
14
120
12
100
10
RDS(on)[mΩ]
ID[A]
70
175 °C
140
80
60
6
4
20
2
0
1
2
3
4
5
VGS[V]
0
25 °C
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
175 °C
8
40
0
60
ID[A]
RDS(on)=f(VGS),ID=20A;parameter:Tj
7
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
2.4
2.0
1.6
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
2500 µA
1.2
250 µA
0.8
0.4
0.4
0.0
-80
-40
0
40
80
120
160
0.0
-80
200
-40
0
40
Tj[°C]
80
120
160
200
Tj[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
3
103
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
Coss
IF[A]
C[pF]
102
2
10
101
101
Crss
0
5
10
15
20
25
30
35
40
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8V
20 V
32 V
8
101
VGS[V]
IAV[A]
6
25 °C
4
0
10
100 °C
2
150 °C
10-1
100
101
102
103
tAV[µs]
0
0
2
4
6
8
10
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
44
43
VBR(DSS)[V]
42
41
40
39
38
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2018-06-04
OptiMOSTM6Power-Transistor,40V
BSZ063N04LS6
RevisionHistory
BSZ063N04LS6
Revision:2018-06-04,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-06-04
Release of final version
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Final Data Sheet
11
Rev.2.0,2018-06-04