BSZ068N06NS

Type BSZ068N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1) • Qualified according to JEDEC for target applications VDS 60 V RDS(on),max 6.8 mW ID 40 A QOSS 19 nC QG(0V..10V) 17 nC • Pb-free lead plating; RoHS compliant PG-TSDSON-8 (Fused Leads) • Halogen-free according to IEC61249-2-21 Type BSZ068N06NS Package Marking PG-TSDSON-8 (Fused Leads) 068N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 40 V GS=10 V, T C=100 °C 38 V GS=10 V, T C=25 °C, R thJA =60K/W 2) 13 Unit A Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche energy, single pulse4) E AS I D=20 A, R GS=25 W 43 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.0 page 1 2013-10-17 BSZ068N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 46 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.1 R thJA=60 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.7 - - 60 Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 5.6 6.8 mW V GS=6 V, I D=5 A - 8.2 10.2 - 1.2 1.8 W 20 41 - S Gate resistance RG Transconductance g fs Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=20 A page 2 2013-10-17 BSZ068N06NS Parameter Values Symbol Conditions Unit min. typ. max. - 1200 1500 - 300 375 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 19 38 Turn-on delay time t d(on) - 7 - Rise time tr - 3 - Turn-off delay time t d(off) - 12 - Fall time tf - 3 - Gate to source charge Q gs - 5.6 - Gate charge at threshold Q g(th) - 3.4 - Gate to drain charge Q gd - 3.4 5.1 Switching charge Q sw - 5.6 - Gate charge total Qg - 17 21 Gate plateau voltage V plateau - 4.6 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 15 - nC Output charge Q oss V DD=30 V, V GS=0 V - 19 - - - 40 - - 160 - 0.88 1 V - 23 37 ns - 52 - nC V DD=30 V, V GS=10 V, I D=20 A, R G,ext=1.6 W ns Gate Charge Characteristics5) V DD=30 V, I D=20 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=30 V, I F=20 A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev.2.0 page 3 2013-10-17 BSZ068N06NS 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 40 40 30 30 ID [A] Ptot [W] 50 20 20 10 10 0 0 0 25 50 75 100 125 150 175 0 25 50 TC [°C] 75 100 125 150 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 10 103 limited by on-state resistance 102 1 µs 0.5 10 µs 1 101 0.2 ZthJC [K/W] ID [A] 100 µs 1 ms DC 10 ms 0.1 0.05 0.1 0.02 0.01 100 single pulse 10-1 10-1 100 101 102 VDS [V] Rev.2.0 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 tp [s] page 4 2013-10-17 BSZ068N06NS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 25 10 V 140 7V 20 120 6V RDS(on) [mW] ID [A] 100 80 5.5 V 60 15 5V 5.5 V 6V 10 7V 40 10 V 5 5V 20 0 0 0.0 0.5 1.0 1.5 2.0 0 40 80 VDS [V] 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 80 140 120 60 gfs [S] ID [A] 100 80 40 60 40 20 20 150 °C 25 °C 0 0 0 2 4 6 8 VGS [V] Rev.2.0 0 20 40 60 ID [A] page 5 2013-10-17 BSZ068N06NS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 14 5 12 4 3 max 8 6 VGS(th) [V] RDS(on) [mW] 10 typ 200 mA 20 µA 2 4 1 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 Ciss 1000 C [pF] 103 103 10000 IF [A] 104 Coss 102 101 100 25 °C 150 °C Crss 101 100 10 0 20 40 60 VDS [V] Rev.2.0 0 0.5 1 1.5 2 VSD [V] page 6 2013-10-17 BSZ068N06NS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=20 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12 V 48 V 10 25 °C 8 IAV [A] 100 °C VGS [V] 125 °C 1 6 4 2 0.1 1 10 100 0 1000 0 4 tAV [µs] 8 12 16 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 66 62 V gs(th) 58 54 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev.2.0 page 7 2013-10-17 BSZ068N06NS PG-TSDSON-8 (Fused Leads): Outline Rev.2.0 page 8 2013-10-17 BSZ068N06NS Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 9 2013-10-17