BSZ068N06NSATMA1

BSZ068N06NS MOSFET OptiMOSTMPower-Transistor,60V TSDSON-8FL(S3O8) Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 6.8 mΩ S3 6D ID 63 A G4 5D QOSS 19 nC QG(0V..10V) 17 nC Type/OrderingCode Package Marking RelatedLinks BSZ068N06NS PG-TSDSON-8 FL 068N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 63 40 13 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 252 A TC=25°C - - 43 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 46 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - 1.6 2.7 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=20µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.6 8.2 6.8 10.2 mΩ VGS=10V,ID=20A VGS=6V,ID=5A Gate resistance RG - 1.2 1.8 Ω - Transconductance gfs 20 41 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 1200 1500 pF VGS=0V,VDS=30V,f=1MHz Coss - 300 375 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 19 38 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 12 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 5.6 - nC VDD=30V,ID=20A,VGS=0to10V Qg(th) - 3.4 - nC VDD=30V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 3.4 5.1 nC VDD=30V,ID=20A,VGS=0to10V Switching charge Qsw - 5.6 - nC VDD=30V,ID=20A,VGS=0to10V Gate charge total Qg - 17 21 nC VDD=30V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=30V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 15 - nC VDS=0.1V,VGS=0to10V Qoss - 19 26 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 40 A TC=25°C - 252 A TC=25°C - 0.88 1 V VGS=0V,IF=20A,Tj=25°C trr - 23 37 ns VR=30V,IF=20A,diF/dt=100A/µs Qrr - 52 - nC VR=30V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 70 60 40 50 30 ID[A] Ptot[W] 40 30 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 160 101 10 102 1 µs 10 µs 100 1 10 1 ms DC 10 ms 0.5 0.2 ZthJC[K/W] 100 µs ID[A] 140 TC[°C] 0.1 0.05 10-1 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 25 10 V 140 7V 20 120 6V RDS(on)[mΩ] ID[A] 100 80 5.5 V 60 15 5V 5.5 V 6V 10 7V 40 10 V 5 5V 20 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 80 140 120 60 gfs[S] ID[A] 100 80 40 60 40 20 20 0 150 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 14 5 12 4 10 6 VGS(th)[V] RDS(on)[mΩ] 3 max 8 typ 200 µA 20 µA 2 4 1 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max 103 102 IF[A] C[pF] Ciss Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 48 V 25 °C 101 8 100 °C VGS[V] IAV[A] 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS RevisionHistory BSZ068N06NS Revision:2020-12-21,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2020-07-09 Update current rating, footnotes, add RthJC typ and Qoss max 2.3 2020-12-21 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-12-21