BSZ070N08LS5
MOSFET
OptiMOSª5Power-Transistor,80V
TSDSON-8FL
(enlarged source interconnection)
Features
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
80
V
G4
5D
RDS(on),max
7.0
mΩ
ID
40
A
Qoss
29
nC
QG(0V..4.5V)
14
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ070N08LS5
PG-TSDSON-8 FL
070N08L
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
40
40
13
A
TC=25°C
TC=100°C
TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
104
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
Device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.7
2.3
V
VDS=VGS,ID=36µA
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
7.4
5.9
9.4
7.0
mΩ
VGS=4.5V,ID=10A
VGS=10V,ID=20A
Gate resistance1)
RG
-
1.3
2
Ω
-
Transconductance
gfs
26
52
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
80
-
Gate threshold voltage
VGS(th)
1.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
1800
2340
pF
VGS=0V,VDS=40V,f=1MHz
Coss
-
280
364
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
Crss
-
12
21
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
6.1
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=3Ω
Rise time
tr
-
4.8
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
24.6
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=3Ω
Fall time
tf
-
5.8
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=3Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
5
-
nC
VDD=40V,ID=20A,VGS=0to4.5V
Gate to drain charge
Qgd
-
5
7
nC
VDD=40V,ID=20A,VGS=0to4.5V
Switching charge
Qsw
-
6.9
-
nC
VDD=40V,ID=20A,VGS=0to4.5V
Gate charge total
Qg
-
14.1
18
nC
VDD=40V,ID=20A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.9
-
V
VDD=40V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
25
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
29
39
nC
VDD=40V,VGS=0V
Gate to source charge
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
40
A
TC=25°C
-
160
A
TC=25°C
-
0.85
1.2
V
VGS=0V,IF=20A,Tj=25°C
trr
-
32
64
ns
VR=40V,IF=20A,diF/dt=100A/µs
Qrr
-
27
54
nC
VR=40V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
40
60
ID[A]
Ptot[W]
30
40
20
20
10
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
102
10 µs
ZthJC[K/W]
ID[A]
100
100 µs
1
10
DC
1 ms
10 ms
0.5
0.2
0.1
0.05
0.02
10-1
0.01
single pulse
0
10
10-1
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
15
10 V
6V
4.5 V
12
120
4V
RDS(on)[mΩ]
ID[A]
4V
80
3.5 V
9
4.5 V
5V
5.5 V
6V
6
10 V
40
3
3V
0
0
1
2
3
4
0
5
0
20
40
VDS[V]
60
80
100
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
120
100
120
gfs[S]
ID[A]
80
80
60
40
40
20
150 °C
25 °C
0
0
2
4
6
8
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
15
2.5
12
2.0
360 µA
1.5
VGS(th)[V]
RDS(on)[mΩ]
9
max
typ
6
3
36 µA
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
60
Tj[°C]
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C, max
150 °C, max
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
20
40
60
80
100
0.0
0.5
VDS[V]
1.5
2.0
2.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
IF=f(VSD);parameter:Tj
8
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8
40 V
101
VGS[V]
IAV[A]
6
25 °C
100 °C
16 V
64 V
4
125 °C
2
100
100
101
102
103
0
0
5
tAV[µs]
10
15
20
25
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
90
VBR(DSS)[V]
85
80
75
70
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.2,2016-08-18
OptiMOSª5Power-Transistor,80V
BSZ070N08LS5
RevisionHistory
BSZ070N08LS5
Revision:2016-08-18,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-03-23
Release of final version
2.1
2016-04-21
Update "Gate threshold voltage"
2.2
2016-08-18
Update Qsw
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PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Final Data Sheet
11
Rev.2.2,2016-08-18