BSZ086P03NS3G

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS -30 V • single P-Channel in S3O8 RDS(on),max 8.6 mW ID -40 A 1) • Qualified according JEDEC for target applications • 150 °C operating temperature PG-TSDSON-8 • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free BSZ086P03NS3 G PG-TSDSON-8 086P3N Yes Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C -40 T C=70 °C -40 T A=25 °C2) -13.5 Unit A Pulsed drain current I D,pulse T C=25 °C3) -160 Avalanche energy, single pulse E AS I D=-20 A, R GS=25 W 105 mJ Gate source voltage V GS ±25 V Power dissipation P tot T A=25 °C 69 W T A=25 °C2) 2.1 Operating and storage temperature ESD class -55 … 150 T j, T stg JESD22-A114 HBM °C 55/150/56 IEC climatic category; DIN IEC 68-1 1) 1C (1 kV - 2 kV) 260 Soldering temperature °C J-STD20 and JESD22 Rev. 2.03 page 1 2013-01-08 BSZ086P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.8 - - 60 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250mA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-105 µA -3.1 -2.5 -1.9 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 V DS=-30 V, V GS=0 V, T j=125 °C - - -10 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-6 V, I D=-20 A - 8.7 13.4 mW V GS=-10 V, I D=-20 A - 6.5 8.6 - 2.2 - W 30 43 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-20 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.03 page 2 2013-01-08 BSZ086P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3190 4785 - 1520 2280 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 110 165 Turn-on delay time t d(on) - 16 24 Rise time tr - 46 69 Turn-off delay time t d(off) - 35 53 Fall time tf - 8 12 Gate to source charge Q gs - 16.1 21.4 Gate charge at threshold Q g(th) - 5.0 6.7 Gate to drain charge Q gd - 7.4 11.1 Switching charge Q sw - 18.4 25.7 Gate charge total Qg - 43.2 57.5 Gate plateau voltage V plateau - -4.5 - Output charge Q oss - 34.9 46.4 - - 40 - - 160 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-20 A, R G,ext=6 W pF ns Gate Charge Characteristics3) V DD=-15 V, I D=20 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V nC Reverse Diode Diode continous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-40 A, T j=25 °C - - -1.1 V Reverse recovery time t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 39 - ns Reverse recovery charge Q rr - 34 - nC Rev. 2.03 page 3 2013-01-08 BSZ086P03NS3 G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 80 48 44 70 40 60 36 32 -ID [A] Ptot [W] 50 40 28 24 20 30 16 20 12 8 10 4 0 0 0 40 80 120 160 0 40 80 TC [°C] 120 160 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 101 1000 10 1 µs 102 100 100 µs 100 1 ms 101 1 0.5 ZthJS [K/W] 10 -ID [A] 10 ms limited by on-state resistance DC 100 1 0.2 0.1 0.05 0.02 10-1 0.1 0.01 single pulse 10-1 0.1 10-2 0.01 0.1 1 10 100 10-1 100 101 102 -VDS [V] Rev. 2.03 10-2 0.01 0.00001 10-5 0.0001 0.001 0.01 0.1 1 10 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2013-01-08 BSZ086P03NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 40 -10 V -4.5 V -5.0 V 35 -4.0 V 30 RDS(on) [mW] -ID [A] 30 -4.2V 20 25 -4.5 V 20 15 -4.0 V -5.0 V 10 10 -6V -10 V 5 -3.7 V -3.5 V 0 0 0 1 2 3 0 10 20 -VDS [V] 30 40 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 60 50 40 gfs [S] -ID [A] 40 30 20 20 25 °C 150 °C 10 0 0 0 1 2 3 4 5 6 -VGS [V] Rev. 2.03 0 10 20 30 -ID [A] page 5 2013-01-08 BSZ086P03NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-20 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-105 mA 12 4 3.5 RDS(on) [mW] 10 max. 3 2.5 -VGS(th) [V] 98 % 8 typ. typ. 2 min. 1.5 6 1 0.5 4 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 Ciss 25 °C, typ Coss 103 150 °C, 98% 150 °C, typ IF [A] C [pF] 10 102 1 Crss 25 °C, 98% 101 0.1 0 10 20 30 0.5 1 1.5 -VSD [V] -VDS [V] Rev. 2.03 0 page 6 2013-01-08 BSZ086P03NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-20 A pulsed parameter: T j(start) parameter: V DD 102 8 7 -15 V -6 V -24 V 6 -IAV [A] 25 °C -VGS [V] 5 100 °C 101 125 °C 4 3 2 1 0 0 100 100 tAV [µs] 101 102 20 -Qgate [nC] 103 15 Drain-source breakdown voltage 40 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 mA 36 V GS Qg -VBR(DSS) [V] 34 32 V gs(th) 30 28 Q g(th) Q sw Q gs 26 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.03 page 7 2013-01-08 BSZ086P03NS3 G Package Outline PG-TSDSON-8 Dimensions in mm Rev. 2.03 page 8 2013-01-08 BSZ086P03NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.03 page 9 2013-01-08