BSZ0905PNS

BSZ0905PNS MOSFET OptiMOSTMP3Power-Transistor,-30V S3O8 Features •singleP-ChannelinS3O8 •OptimizedforChargerapplications •150°Coperatingtemperature •VGS=25V,speciallysuitedfornotebookapplications •Pb-free;RoHScompliant •applications:batterymanagement,loadswitching •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS -30 V G4 5D RDS(on),max 8.6 mΩ ID -40 A Type/OrderingCode Package Marking RelatedLinks BSZ0905PNS PG-TSDSON-8 0905PNS - Final Data Sheet 1 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition -40 -40 -13.5 A TC=25°C TC=70°C TA=25°C1) - -160 A TC=25°C2) - - 105 mJ ID=-20A,RGS=25Ω VGS -25 - 25 V - Power dissipation Ptot - - 69 2.1 - TA=25°C TA=25°C1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 ESD class - - 1C - - (1kV-2kV), JESD22-A114 HBM Soldering temperature - - 260 - °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.8 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area1) - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Fig. 3 for more detailed information Final Data Sheet 3 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-250µA -2.5 -1.9 V VDS=VGS,ID=-105µA - - -1 -10 µA VDS=-30V,VGS=0V,Tj=25°C VDS=-30V,VGS=0V,Tj=125°C IGSS - - -100 nA VGS=-25V,VDS=0V Drain-source on-state resistance RDS(on) - 8.7 6.5 13.4 8.6 mΩ VGS=-6V,ID=-20A VGS=-10V,ID=-20A Gate resistance RG - 2.2 - Ω - Transconductance gfs 30 43 - S |VDS|>2|ID|RDS(on)max,ID=-20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS -30 - Gate threshold voltage VGS(th) -3.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3190 - pF VGS=0V,VDS=-15V,f=1MHz Output capacitance Coss - 1520 - pF VGS=0V,VDS=-15V,f=1MHz Reverse transfer capacitance Crss - 110 - pF VGS=0V,VDS=-15V,f=1MHz Turn-on delay time td(on) - 16 - ns VDD=-15V,VGS=-10V,ID=-20A, RG,ext=6Ω Rise time tr - 46 - ns VDD=-15V,VGS=-10V,ID=-20A, RG,ext=6Ω Turn-off delay time td(off) - 35 - ns VDD=-15V,VGS=-10V,ID=-20A, RG,ext=6Ω Fall time tf - 8 - ns VDD=-15V,VGS=-10V,ID=-20A, RG,ext=6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 16.1 - nC VDD=-15V,ID=-20A,VGS=0to-10V Gate charge at threshold Qg(th) - 5.0 - nC VDD=-15V,ID=-20A,VGS=0to-10V Gate to drain charge Qgd - 7.4 - nC VDD=-15V,ID=-20A,VGS=0to-10V Switching charge Qsw - 18.4 - nC VDD=-15V,ID=-20A,VGS=0to-10V Gate charge total Qg - 43.2 - nC VDD=-15V,ID=-20A,VGS=0to-10V Gate plateau voltage Vplateau - -4.5 - V VDD=-15V,ID=-20A,VGS=0to-10V Output charge Qoss - 34.9 - nC VDD=-15V,VGS=0V 1) See Fig. 3 for more detailed information Final Data Sheet 4 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS Table7Reversediode Parameter Symbol Diode continous forward current Values Unit Note/TestCondition -40 A TC=25°C - -160 A TC=25°C - - -1.1 V VGS=0V,IF=-40A,Tj=25°C trr - 39 - ns VR=15V,IF=|IS|,diF/dt=100A/µs Qrr - 34 - nC VR=15V,IF=|IS|,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 48 44 70 40 60 36 32 50 ID[A] Ptot[W] 28 40 24 20 30 16 20 12 8 10 4 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC);tp≤10s ID=f(TC);|VGS|≥10V;tp≤10s Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 2 10 10 µs 1 ms 100 µs 0.5 100 ZthJS[K/W] ID[A] 101 DC 100 10 ms 0.2 0.1 0.05 10-1 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJS=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 40 40 35 -4.5 V -5.0 V -4.0 V 30 30 ID[A] -4.2V 20 RDS(on)[mΩ] 25 -10 V -4.5 V 20 15 -4.0 V -5.0 V 10 10 -3.5 V 0 1 2 -10 V 5 -3.7 V 0 -6V 0 3 0 10 20 VDS[V] 30 40 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 60 60 50 40 gfs[S] ID[A] 40 30 20 20 150 °C 10 25 °C 0 0 1 2 3 4 5 6 0 0 VGS[V] 20 30 -ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 12 4.0 3.5 10 3.0 2.5 VGS(th)[V] RDS(on)[mΩ] 98 % max. 8 typ. typ. 2.0 min. 1.5 6 1.0 0.5 4 -60 -20 20 60 100 140 0.0 -60 180 -20 20 60 Tj[°C] 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=-20A;VGS=-10V VGS(th)=f(Tj);VGS=VDS;ID=-105µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 102 10 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% Ciss Coss 101 IF[A] C[pF] 103 102 100 Crss 101 0 10 20 30 10-1 0.0 -VDS[V] 1.0 1.5 -VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 8 7 -15 V -6 V 6 -24 V 25 °C 5 125 °C VGS[V] IAV[A] 100 °C 101 4 3 2 1 100 100 101 102 103 tAV[µs] 0 0 20 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=-20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 36 34 VBR(DSS)[V] 32 30 28 26 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 9 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS 5PackageOutlines Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-12-13 OptiMOSTMP3Power-Transistor,-30V BSZ0905PNS RevisionHistory BSZ0905PNS Revision:2019-12-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-12-13 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-12-13