BSZ0910NDXTMA1

BSZ0910ND MOSFET PowerStage3x3 PowerStage3x3 Features ·DualN-channelOptiMOS™MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100%Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 9.5 mΩ ID 25 A Qoss 4.6 nC QG(0V..4.5V) 4.0 nC VPhase Type/OrderingCode Package Marking RelatedLinks BSZ0910ND PG-WISON-8 0910ND - Final Data Sheet 1 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND 1Maximumratings atTA=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 25 11.1 9.5 5.7 A VGS=10V,TC=25°C VGS=10V,TA=25°C1) VGS=4.5V,TA=25°C1) VGS=4.5V,TA=25°C2) - 40 A TA=25°C - - 20 mJ ID=9A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 31 1.9 W TC=25°C TA=25°C,RTHJA=65°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 4 °C/W - Device on PCB, 6 cm² cooling area1) RthJA - - 65 °C/W - Device on PCB, minimal footprint2) RthJA - - 180 °C/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) device mounted on a minimum pad (one layer, 70 µm thick) 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2 V VDS=VGS,ID=250µA - 10 1 - µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.7 10.3 9.5 13.0 mΩ VGS=10V,ID=9A VGS=4.5V,ID=9A Gate resistance1) RG 1.8 3.5 7 Ω - Transconductance gfs - 33 - S |VDS|≥2|ID|RDS(on)max,ID=9A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 590 800 pF VGS=0V,VDS=15V,f=1MHz Coss - 170 230 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 21 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 6.2 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Rise time tr - 3.2 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Turn-off delay time td(off) - 18.5 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Fall time tf - 2.8 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.5 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge at threshold Qg(th) - 0.9 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate to drain charge Qgd - 1.0 - nC VDD=15V,ID=9A,VGS=0to4.5V Switching charge Qsw - 1.5 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 4.0 5.6 nC VDD=15V,ID=9A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 8.2 11.4 nC VDD=15V,ID=9A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 3.4 - nC VDS=0.1V,VGS=0to4.5V Qoss - 4.6 - nC VDD=15V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery charge 1) Values Unit Note/TestCondition 25 A TC=25°C - 40 A TC=25°C - 0.86 1.1 V VGS=0V,IF=9A,Tj=25°C - 5 - nC VR=15V,IF=9A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Qrr Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 0.8 8 0.7 7 10V 0.6 6 4.5V 5 ID[A] Ptot[W] 0.5 0.4 4 0.3 3 0.2 2 0.1 1 0.0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TA[°C] 80 100 120 140 160 TA[°C] Ptot=f(TA),minimalfootprint ID=f(TA);minimalfootprint Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 10 ms 10 µs 100 µs 101 DC ZthJC[K/W] ID[A] 1 ms 100 100 10-1 10-2 10-1 100 101 102 10-1 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 40 24 10 V 2.8 V 4V 3V 4.5 V 35 20 5V 3.5 V 30 3.5 V 16 20 2.8 V 15 RDS(on)[mΩ] ID[A] 25 3V 4V 12 4.5 V 5V 8 10 V 10 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 5 10 15 VDS[V] 20 25 30 35 40 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 40 24 35 20 30 16 RDS(on)[mΩ] ID[A] 25 20 15 150 °C 12 25 °C 8 10 4 5 25 °C 150 °C 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=9A;parameter:Tj 7 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 1.8 2.0 1.6 1.6 1.2 2500 µA 1.2 1.0 VGS(th)[V] RDS(on)(normalizedto25°C) 1.4 0.8 250 µA 0.8 0.6 0.4 0.4 0.2 0.0 -80 -40 0 40 80 120 0.0 -80 160 -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=9A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 102 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] C[pF] 101 100 Crss 1 10 0 5 10 15 20 25 30 10-1 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 6V 15 V 24 V 8 101 VGS[V] IAV[A] 6 25 °C 100 °C 4 0 10 125 °C 2 10-1 100 101 102 103 0 0 2 tAV[µs] 4 6 8 10 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=9Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 33 VBR(DSS)[V] 32 31 30 29 28 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND 5PackageOutlines Figure1OutlinePG-WISON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2017-11-23 PowerStage3x3 BSZ0910ND RevisionHistory BSZ0910ND Revision:2017-11-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-11-23 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2017-11-23