BSZ097N10NS5

BSZ097N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V TSDSON-8FL (enlarged source interconnection) Features •Idealforhighfrequencyswitching •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,Logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.7 mΩ ID 40 A S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ097N10NS5 PG-TSDSON-8 FL 097N10N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 40 39 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1) - 160 A TC=25°C - - 97 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - RthJA - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=36µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 10.3 8.3 13.0 9.7 mΩ VGS=6V,ID=5A VGS=10V,ID=20A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 23 46 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1600 2080 pF VGS=0V,VDS=50V,f=1MHz Coss - 250 325 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 12 21 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 11 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Rise time tr - 5 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Turn-off delay time td(off) - 21 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Fall time tf - 5 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 7 - nC VDD=50V,ID=20A,VGS=0to10V Qg(th) - 4 - nC VDD=50V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 5 8 nC VDD=50V,ID=20A,VGS=0to10V Switching charge Qsw - 7 - nC VDD=50V,ID=20A,VGS=0to10V Gate charge total Qg - 22 28 nC VDD=50V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=50V,ID=20A,VGS=0to10V Qoss - 30 40 nC VDD=50V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 40 A TC=25°C - 160 A TC=25°C - 0.9 1.2 V VGS=0V,IF=20A,Tj=25°C trr - 43 85 ns VR=50V,IF=20A,diF/dt=100A/µs Qrr - 60 120 nC VR=50V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 45 70 40 35 60 30 ID[A] Ptot[W] 50 40 25 20 30 15 20 10 10 0 5 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 101 100 ZthJC[K/W] ID[A] 10 µs 100 µs DC 0.5 0.2 0.1 10-1 0.05 1 ms 0.02 100 0.01 10 ms 10-1 10-1 100 101 single pulse 102 103 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 32 8V 140 28 7V 10 V 6V 120 24 4.5 V 20 RDS(on)[mΩ] ID[A] 100 5.5 V 80 60 20 5.5 V 12 6V 7V 5V 40 5V 16 8 10 V 4 4.5 V 4V 0 0 1 2 3 4 0 5 0 20 40 VDS[V] 60 80 100 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 80 70 60 60 50 gfs[S] ID[A] 40 40 30 20 20 10 150 °C 0 0 1 2 3 25 °C 4 5 6 7 0 0 VGS[V] 20 30 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 4.0 3.5 360 µA 15 3.0 36 µA max VGS(th)[V] RDS(on)[mΩ] 2.5 10 Typ 2.0 1.5 5 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C max 150 °C max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 80 V 9 8 50 V 7 20 V VGS[V] IAV[A] 6 101 25 °C 100 °C 125 °C 5 4 3 2 1 100 10-1 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 5PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.3,2017-01-26 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 RevisionHistory BSZ097N10NS5 Revision:2017-01-26,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-05-05 Release of Final Version 2.2 2016-09-23 Update Avalanche Energy 2.3 2017-01-26 Update Id at Tc=100°C and Ta=25°C TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2017-01-26