BSZ099N06LS5

BSZ099N06LS5 MOSFET OptiMOSTMPower-Transistor,60V TSDSON-8FL(S3O8) Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 9.9 mΩ S3 6D ID 46 A G4 5D QOSS 13 nC QG(0V..4.5V) 7 nC Type/OrderingCode Package Marking RelatedLinks BSZ099N06LS5 PG-TSDSON-8 FL 099N06L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 46 29 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 184 A TC=25°C - - 19 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 36 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - 2.1 3.5 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=14µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 8.3 11.3 9.9 14 mΩ VGS=10V,ID=20A VGS=4.5V,ID=10A Gate resistance1) RG - 1.1 1.65 Ω - Transconductance gfs 20 40 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 1000 1300 pF VGS=0V,VDS=30V,f=1MHz Coss - 210 270 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 15 26 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 4.3 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 2.7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 13.8 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 2.7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 3.1 - nC VDD=30V,ID=20A,VGS=0to4.5V Qg(th) - 1.6 - nC VDD=30V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 2.0 3.0 nC VDD=30V,ID=20A,VGS=0to4.5V Switching charge Qsw - 3.5 - nC VDD=30V,ID=20A,VGS=0to4.5V Gate charge total Qg - 6.9 8.6 nC VDD=30V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 12 - nC VDS=0.1V,VGS=0to10V Qoss - 13 17.6 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 32 A TC=25°C - 184 A TC=25°C - 0.87 1.1 V VGS=0V,IF=20A,Tj=25°C trr - 18 36 ns VR=30V,IF=20A,diF/dt=100A/µs Qrr - 6 12 nC VR=30V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 40 30 ID[A] Ptot[W] 30 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 0.5 102 1 µs 100 100 µs 1 10 1 ms DC 10 ms 0.2 0.1 ZthJC[K/W] ID[A] 10 µs 0.05 0.02 0.01 10-1 single pulse 100 10-1 100 101 102 10-2 10-6 10-5 VDS[V] 10-4 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 175 101 10 10-1 150 TC[°C] ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 25 140 10 V 20 120 5V 4V RDS(on)[mΩ] ID[A] 100 4.5 V 80 60 15 4.5 V 5V 5.5 V 6V 10 7V 10 V 4V 40 3.5 V 5 3.2 V 20 3V 2.8 V 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 80 70 60 60 50 gfs[S] ID[A] 40 40 30 20 20 150 °C 25 °C 10 0 0 2 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 3 18 16 2 140 µA max 12 VGS(th)[V] RDS(on)[mΩ] 14 10 typ 8 14 µA 1 6 4 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max 103 102 IF[A] C[pF] Ciss Coss 2 101 10 101 Crss 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 30 V 12 V 7 101 25 °C 6 VGS[V] 100 °C IAV[A] 48 V 125 °C 5 4 0 10 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 RevisionHistory BSZ099N06LS5 Revision:2020-10-23,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-12-23 Release of final version 2.1 2016-04-07 Update gate threshold voltage 2.2 2016-08-10 Update in Qrr and trr 2.3 2020-07-29 Update current rating 2.4 2020-10-23 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.4,2020-10-23