BSZ15DC02KDH

BSZ15DC02KD H OptiMOS™ 2 + OptiMOS™P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 55 mW VGS=±2.5 V 310 95 -3.2 5.1 · Complementary P + N channel · Enhancement mode VDS · Super Logic level (2.5V rated) RDS(on),max · Common drain ID · Avalanche rated A · 175 °C operating temperature · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant · Halogen-free according to IEC61246-21 Type BSZ15DC02KD H Package PG-TSDSON-8 Marking Lead Free Halogen Free Packing 15DC02K Yes Yes Non dry Maximum ratings, at T A=25 °C, unless otherwise specified 1) Parameter Value Symbol Conditions Unit P N T A=25 °C -3.2 5.1 T A=100 °C -2.2 3.6 I D,pulse T A=25 °C -13 20 Avalanche energy, single pulse E AS P: I D=-3.2 A, N: I D=5.1 A, R GS=25 W 11 11 Gate source voltage V GS Power dissipation P tot 2) Operating and storage temperature T j, T stg Continuous drain current Pulsed drain current ID ESD class Soldering temperature T A=25 °C JESD22-A114-HBM T solder mJ ±12 V 2.5 W -55 ... 175 °C 0 (2|I D|R DS(on)max, I D=-2.2 A 3.4 6.9 - N |V DS|>2|I D|R DS(on)max, I D=3.6 A 5.5 11 - P N Drain-source on-state resistance Transconductance I GSS µA S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 2) Rev 2.3 page 2 2019-01-17 BSZ15DC02KD H Parameter Values Symbol Conditions Unit min. typ. max. - 270 360 - 315 419 - 110 150 - 114 152 P Crss - 94 140 N - 16 24 P t d(on) - 7.4 - - 4.9 - - 3.7 - - 2.0 - - 11.3 - - 12.2 - P tf - 4.7 - N - 1.4 - P Q gs - -0.59 -0.8 - -1.4 -1.8 - -3.0 -4.5 - -2.2 - - 0.7 1.0 - 0.4 - 2.1 2.8 Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance Turn-on delay time V GS=0 V, P: V DS=-10 V, N: V DS= 10 V, f =1 MHz N Rise time P tr N Turn-off delay time P t d(off) N Fall time P: V DD=-10 V, V GS=-4.5 V, R G=6 W, I D=-3.2 A N: V DD=10 V, V GS=4.5 V, R G=6 W, I D=5.1 A pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Gate to source charge N Q gs Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Rev 2.3 V DD=-10 V, I D=-3.2 A, V GS=0 to -4.5 V V DD=10 V, I D=5.1 A, V GS=0 to 4.5 V nC 2.3 page 3 2019-01-17 BSZ15DC02KD H Parameter Values Symbol Conditions Unit min. typ. max. - - -2.1 Reverse Diode Diode continuous forward current P IS N A 2.3 T C=25 °C Diode pulse current P I S,pulse - - N Diode forward voltage Reverse recovery time 20 P V SD V GS=0 V, I F=3.2 A, T j=25 °C - -0.98 -1.2 N V GS=0 V, I F=5.1 A, T j=25 °C - 0.9 1.2 P t rr N Reverse recovery charge P Q rr 12.2 V R=±10 V, I F=I S, di F/dt =100 A/µs N Rev 2.3 -13 - ns - 4.6 - page 4 10.9 3.4 V nC - 2019-01-17 BSZ15DC02KD H 2 Power dissipation (N) P tot=f(T A) P tot=f(T A) 3 3 2.5 2.5 2 2 Ptot [W] Ptot [W] 1 Power dissipation (P) 1.5 1.5 1 1 0.5 0.5 0 0 0 40 80 120 0 160 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (P) 4 Drain current (N) I D=f(T A) I D=f(T A) parameter: V GS≤-4.5 V parameter: V GS≥4.5 V 3.5 5.5 5 3 4.5 4 2.5 3.5 ID [A] -ID [A] 2 1.5 3 2.5 2 1 1.5 1 0.5 0.5 0 0 0 40 80 120 160 0 TA [°C] Rev 2.3 40 80 TA [°C] page 5 2019-01-17 BSZ15DC02KD H 6 Safe operating area (P) 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 I D=f(V DS); T A=25 °C; D =0 parameter: t p parameter: t p 102 1 µs 1 µs 101 10 µs 101 10 µs 100 µs 1 ms 100 µs 1 ms ID [A] -ID [A] 10 ms 10 ms 100 DC 10-1 100 DC 10-1 10-2 10-2 10-1 101 102 10-1 100 -VDS [V] 101 VDS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJA=f(t p) Z thJA=f(t p) parameter: D =t p/T parameter: D =t p/T 102 102 0.5 ZthJA [K/W] ZthJA [K/W] 0.5 0.2 101 0.1 0.2 101 0.1 0.05 0.05 0.02 0.02 0.01 0.01 single pulse single pulse 100 100 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] Rev 2.3 102 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 6 2019-01-17 BSZ15DC02KD H 10 Typ. Output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 20 20 18 4.5 V 10 V 10 V 18 4.5 V 3.5 V 3V 16 16 3.3 V 14 14 12 12 ID [A] ID [A] 3V 10 10 8 8 6 2.5 V 6 4 2.3 V 4 2 2V 2 2.5 V 2.3 V 2V 1.8 V 1.8 V 0 0 0 1 2 0 3 1 2 3 VDS [V] VDS [V] 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 280 2V 240 2.2 V 100 2.2 V 200 80 RDS(on) [mW] RDS(on) [mW] 2.5 V 160 3V 3.3 V 120 2.5 V 60 3V 3.5 V 4.5 V 80 6V 20 40 0 0 0 2 4 6 8 ID [A] Rev 2.3 4.5 V 40 6V 0 2 4 6 8 ID [A] page 7 2019-01-17 BSZ15DC02KD H 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | ID| RDS(on)max I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j parameter: T j 6 6 5 5 4 4 ID [A] -ID [A] 14 Typ. Transfer characteristics (P) 3 3 2 2 175 °C 175 °C 1 1 25 °C 25 °C 0 0 0 1 2 0 3 1 -VGS [V] 2 3 VGS [V] 15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=-3.2 A; V GS=-4.5 V R DS(on)=f(T j); I D=5.1A; V GS=4.5 V 240 100 90 200 80 RDS(on) [mW] RDS(on) [mW] 70 max 160 120 typ 60 max 50 typ 40 80 30 20 40 10 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev 2.3 -60 -20 20 60 100 140 180 Tj [°C] page 8 2019-01-17 BSZ15DC02KD H 18 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=-110 µA V GS(th)=f(T j); V GS=V DS; I D=110 µA 1.6 1.6 max max 1.2 1.2 0.8 VGS(th) [V] -VGS(th) [V] typ typ min 0.4 min 0.8 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 103 103 Ciss Ciss Coss C [pF] C [pF] 102 Coss 102 Crss Crss 101 101 100 0 10 20 -VDS [V] Rev 2.3 0 5 10 15 20 VDS [V] page 9 2019-01-17 BSZ15DC02KD H 22 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 101 101 25 °C 175 °C 175 °C 25 °C 100 100 IF [A] -IF [A] max, 175°C 10-1 10-1 175 °C, max max, 25 °C 25 °C, max 10-2 10-2 0 0.5 1 1.5 2 0 0.4 0.8 -VSD [V] 1.2 1.6 VSD [V] 23 Avalanche characteristics (P) 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 101 101 25 °C 100 °C 25 °C 150 °C 150 °C IAV [A] -IAV [A] 100 °C 100 10-1 10-1 100 101 102 103 tAV [µs] Rev 2.3 100 100 101 102 103 tAV [µs] page 10 2019-01-17 BSZ15DC02KD H 26 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-3.2A pulsed V GS=f(Q gate); I D=5.1A pulsed parameter: V DD parameter: V DD 6 6 5 5 -4 V -10 V -16 V 4V 4 VGS [V] -VGS [V] 4 10 V 3 3 2 2 1 1 0 16 V 0 0 1 2 3 4 0 5 0.5 1 -Qgate [nC] 1.5 2 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=-250 µA V BR(DSS)=f(T j); I D=250 µA 25 25 24 24 23 23 22 22 VBR(DSS) [V] -VBR(DSS) [V] 3 140 180 Qgate [nC] 27 Drain-source breakdown voltage (P) 21 20 21 20 19 19 18 18 17 17 16 16 -60 -20 20 60 100 140 180 Tj [°C] Rev 2.3 2.5 -60 -20 20 60 100 Tj [°C] page 11 2019-01-17 BSZ15DC02KD H Package Outline PG-TSDSON-8 PG-TDSON-8: Outline Footprint Dimensions in mm Rev 2.3 page 12 2019-01-17 OptiMOSª2+OptiMOSªP2SmallSignalTransistor BSZ15DC02KDH RevisionHistory BSZ15DC02KD H Revision:2019-01-30,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2019-01-30 Update Marking Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.3,2019-01-30