BSZ160N10NS3

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3PowerTransistor BSZ160N10NS3 DataSheet Rev.2.1 Final PowerManagement&Multimarket BSZ160N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V • Ideal for high frequency switching RDS(on),max 16 mW • Optimized technology for DC/DC converters ID 40 A • Excellent gate charge x R DS(on) product (FOM) PG-TSDSON-8 • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ160N10NS3 G PG-TSDSON-8 160N10N Maximum ratings, at T A=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 40 V GS=10 V, T C=100 °C 28 V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Unit A 8 Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche energy, single pulse4) E AS I D=20 A, R GS=25 W 80 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information 2) Rev. 2.1 page 1 2015-09-17 BSZ160N10NS3 G Maximum ratings, at T A=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 63 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.1 R thJA=60 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.1 minimal footprint - - 62 6 cm2 cooling area2) - - 60 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=33 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 14 16 mW V GS=6 V, I D=10 A - 18 33 - 1.4 - W 16 33 - S Gate resistance RG Transconductance g fs Rev. 2.1 |V DS|>2|I D|R DS(on)max, I D=20 A page 2 2015-09-17 BSZ160N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1300 1700 - 240 320 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=50 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 11 - Turn-on delay time t d(on) - 13.0 - Rise time tr - 10.0 - Turn-off delay time t d(off) - 22.0 - Fall time tf - 5.0 - Gate to source charge Q gs - 5.7 - Gate charge at threshold Q g(th) - 3.8 - Gate to drain charge Q gd - 3.4 - Switching charge Q sw - 5.3 - Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 25 33 nC - - 40 A - - 160 - 0.9 1.2 V - 73 - ns - 52 - nC V DD=50 V, V GS=10 V, I D=10 A, R G,ext=1.6 W ns Gate Charge Characteristics5) V DD=50 V, I D=10 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=50 V, I F=10A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2015-09-17 BSZ160N10NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 50 45 70 40 60 35 30 ID [A] Ptot [W] 50 40 25 20 30 15 20 10 10 5 0 0 0 25 50 75 100 125 150 175 0 25 50 75 TC [°C] 100 125 150 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 10 103 limited by on-state resistance 1 µs 102 10 µs 0.5 ZthJC [K/W] ID [A] DC 1 100 µs 101 0.2 0.1 0.05 0.1 1 ms 0.02 100 0.01 10 ms single pulse 10-1 100 101 102 103 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.1 0.01 10-6 0 10-1 page 4 2015-09-17 BSZ160N10NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 100 7V 9V 10 V 8V 36 6V 32 80 5V RDS(on) [mW] 28 60 ID [A] 5.5 V 40 24 5.5 V 20 6V 7V 16 8V 5V 9V 10 V 12 20 8 4.5 V 4 0 0 0 1 2 3 4 0 5 20 40 VDS [V] 60 80 100 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 80 40 60 30 gfs [S] ID [A] parameter: T j 40 20 20 10 150 °C 25 °C 0 0 0 1 2 3 4 5 6 7 VGS [V] Rev. 2.1 0 10 20 30 ID [A] page 5 2015-09-17 BSZ160N10NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 40 4 35 30 3 330 µA 20 VGS(th) [V] RDS(on) [mW] 33 µA 25 98% 2 15 Typ 10 1 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 150 °C 100 25 °C, max Coss IF [A] C [pF] 25 °C 102 150 °C, max 10 Crss 101 100 0 20 40 60 80 VDS [V] Rev. 2.1 1 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2015-09-17 BSZ160N10NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=10 A pulsed parameter: T j(start) parameter: V DD 100 12 50 V 10 20 V 80 V VGS [V] IAV [A] 8 10 100 °C 25 °C 6 125 °C 4 2 1 0 0.1 1 10 100 1000 0 5 tAV [µs] 10 15 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V gs(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.1 page 7 2015-09-17 BSZ160N10NS3 G Package Outline: PG-TSDSON-8 Footprint Dimensions in mm Rev. 2.1 page 8 2015-09-17 OptiMOS™3PowerTransistor BSZ160N10NS3 RevisionHistory BSZ160N10NS3 Revision:2015-10-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-10-05 Update Id condition for Vgs(th) and Tj to Ta condition for "Maximum ratings" WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.1,2015-10-05