MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOS™5Power-Transistor,150V
BSZ300N15NS5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
1Description
TSDSON-8FL
(enlarged source interconnection)
Features
•Idealforhighfrequencyswitchingandsynchronousrectification
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
30
mΩ
ID
32
A
Qoss
28
nC
QG(0V..10V)
10
nC
Qsw
4.5
nC
Type/OrderingCode
Package
BSZ300N15NS5
PG-TSDSON-8 FL
1)
Marking
300N15NS
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
32
21
A
TC=25°C
TC=100°C
-
128
A
TC=25°C
-
-
30
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
62.5
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current1)
2)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area3)
Values
Min.
Typ.
Max.
RthJC
-
1.2
2
K/W
-
RthJA
-
-
60
K/W
-
1)
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
4
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.8
4.6
V
VDS=VGS,ID=32µA
-
0.1
10
1
100
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
25.5
28.1
30
49
mΩ
VGS=10V,ID=16A
VGS=8V,ID=8A
Gate resistance1)
RG
-
0.8
1.2
Ω
-
Transconductance
gfs
11
22
-
nC
|VDS|>2|ID|RDS(on)max,ID=16A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
150
-
Gate threshold voltage
VGS(th)
3.0
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
730
950
pF
VGS=0V,VDS=75V,f=1MHz
Output capacitance
Coss
-
180
230
pF
VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance1)
Crss
-
6
11
pF
VGS=0V,VDS=75V,f=1MHz
Turn-on delay time
td(on)
-
7.0
-
ns
VDD=75V,VGS=10V,ID=16A,
RG,ext=3Ω
Rise time
tr
-
2.2
-
ns
VDD=75V,VGS=10V,ID=16A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
7.5
-
ns
VDD=75V,VGS=10V,ID=16A,
RG,ext=3Ω
Fall time
tf
-
2.2
-
ns
VDD=75V,VGS=10V,ID=16A,
RG,ext=3Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
4.3
-
nC
VDD=75V,ID=16A,VGS=0to10V
Gate to drain charge
Qgd
-
2.2
3.4
nC
VDD=75V,ID=16A,VGS=0to10V
Switching charge
Qsw
-
4.5
-
nC
VDD=75V,ID=16A,VGS=0to10V
Gate charge total
Qg
-
10.1
13
nC
VDD=75V,ID=16A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.9
-
V
VDD=75V,ID=16A,VGS=0to10V
Qoss
-
28
37
nC
VDD=75V,VGS=0V
Gate to source charge
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
32
A
TC=25°C
-
128
A
TC=25°C
-
0.88
1.2
V
VGS=0V,IF=16A,Tj=25°C
trr
-
20.5
41
ns
VR=75V,IF=16,diF/dt=100A/µs
Qrr
-
10.9
21.8
nC
VR=75V,IF=16,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test
Final Data Sheet
6
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
5Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
70
35
60
30
50
25
40
20
ID[A]
Ptot[W]
Diagram1:Powerdissipation
30
15
20
10
10
5
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
102
10 µs
100
0.5
1
ID[A]
100 µs
1 ms
100
0.2
ZthJC[K/W]
10
10 ms
0.1
10-1
DC
10-1
10-2
0.05
0.02
0.01
single pulse
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
125
60
5.5 V
50
100
6V
6.5 V
10V
7V
8V
40
ID[A]
RDS(on)[mΩ]
75
50
7V
8V
30
10V
20
6.5 V
25
10
6V
5.5 V
0
0
1
2
3
4
0
5
0
10
20
VDS[V]
30
40
50
60
50
60
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
60
40
50
30
gfs[S]
ID[A]
40
30
20
20
10
10
150 °C
0
0
2
4
25 °C
6
8
0
0
10
VGS[V]
30
40
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
8
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
70
5
60
320 µA
4
32 µA
3
40
VGS(th)[V]
RDS(on)[mΩ]
50
max
30
typ
2
20
1
10
0
-60
-10
40
90
140
0
-60
190
-10
40
Tj[°C]
90
140
190
Tj[°C]
RDS(on)=f(Tj);ID=16A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C, max
150 °C, max
103
Ciss
102
IF[A]
C[pF]
Coss
102
101
101
100
Crss
0
25
50
75
100
100
0.0
0.5
VDS[V]
1.5
2.0
2.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
IF=f(VSD);parameter:Tj
9
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
75 V
8
30 V
120 V
VGS[V]
IAV[A]
6
25 °C
101
100 °C
4
125 °C
2
100
100
101
102
103
0
0
tAV[µs]
4
8
12
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=16Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
170
VBR(DSS)[V]
160
150
140
130
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.1,2015-06-09
OptiMOSª5Power-Transistor,150V
BSZ300N15NS5
RevisionHistory
BSZ300N15NS5
Revision:2015-06-09,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-05-27
Release of final version
2.1
2015-06-09
Update avalanche energy
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.1,2015-06-09
