MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOS™3Power-Transistor,100V
BSZ440N10NS3G
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
1Description
S3O8
8
7
Features
•Verylowgatechargeforhighfrequencyapplications
•Optimizedfordc-dcconversion
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
1
Table1KeyPerformanceParameters
2
3
6
5
4
S1
8D
S2
7D
Parameter
Value
Unit
VDS
100
V
S3
6D
RDS(on),max
44
mΩ
G4
5D
ID
18
A
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ440N10NS3 G
PG-TSDSON-8
440N10N
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
18
11
5.3
A
TC=25°C
TC=100°C
TA=25°C,RthJA=50K/W1)
-
72
A
TC=25°C
-
-
17
mJ
ID=12A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
29
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
4.3
K/W
-
Thermal resistance, junction - ambient,
RthJA
6 cm2 cooling area1)
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
see figure 3
Final Data Sheet
4
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.7
3.5
V
VDS=VGS,ID=12µA
-
0.01
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
38
48
44
86
mΩ
VGS=10V,ID=12A
VGS=6V,ID=6A
Gate resistance
RG
-
1.5
-
Ω
-
Transconductance
gfs
8
15
-
S
|VDS|>2|ID|RDS(on)max,ID=12A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
480
640
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
87
120
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
6
-
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
4.3
-
ns
VDD=50V,VGS=10V,ID=6A,
RG=1.6Ω
Rise time
tr
-
1.8
-
ns
VDD=50V,VGS=10V,ID=6A,
RG=1.6Ω
Turn-off delay time
td(off)
-
9.1
-
ns
VDD=50V,VGS=10V,ID=6A,
RG=1.6Ω
Fall time
tf
-
2.0
-
ns
VDD=50V,VGS=10V,ID=6A,
RG=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2.2
-
nC
VDD=50V,ID=6A,VGS=0to10V
Gate to drain charge
Qgd
-
1.3
-
nC
VDD=50V,ID=6A,VGS=0to10V
Switching charge
Qsw
-
2.0
-
nC
VDD=50V,ID=6A,VGS=0to10V
Gate charge total
Qg
-
6.8
9.1
nC
VDD=50V,ID=6A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.5
-
V
VDD=50V,ID=6A,VGS=0to10V
Qoss
-
9.0
12
nC
VDD=50V,VGS=0V
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Values
Unit
Note/TestCondition
18
A
TC=25°C
-
72
A
TC=25°C
-
1
1.2
V
VGS=0V,IF=18A,Tj=25°C
trr
-
44
-
ns
VR=50V,IF=6A,diF/dt=100A/µs
Qrr
-
61
-
nC
VR=50V,IF=6A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
6
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
5Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
40
20
30
15
ID[A]
Ptot[W]
Diagram1:Powerdissipation
20
10
0
10
5
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
102
100 ns
0.5
ZthJC[K/W]
ID[A]
1 µs
10 µs
101
100 µs
100
0.2
0.1
1 ms
0.05
DC
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
103
10-1
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
50
70
5V
5.5 V
60
40
6V
10 V
7V
50
30
RDS(on)[mΩ]
7V
ID[A]
6V
20
5.5 V
40
10 V
30
20
5V
10
10
4.5 V
0
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
60
25
30
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
40
30
25
30
gfs[S]
ID[A]
20
20
15
10
10
5
150 °C
0
0
2
25 °C
4
6
0
0
5
VGS[V]
15
20
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
10
gfs=f(ID);Tj=25°C
8
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
90
4.0
80
3.5
70
3.0
120 µA
60
50
VGS(th)[V]
RDS(on)[mΩ]
2.5
98 %
typ
40
12 µA
2.0
1.5
30
1.0
20
0.5
10
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=12A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C, 98%
150 °C, 98%
103
Ciss
Coss
102
IF[A]
C[pF]
102
101
101
100
Crss
0
20
40
60
80
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
8
80 V
50 V
VGS[V]
IAS[A]
6
25 °C
101
100 °C
20 V
4
125 °C
2
100
10-1
100
101
102
103
0
0
tAV[µs]
2
4
6
8
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=6Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
110
VBR(DSS)[V]
105
100
95
90
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
6PackageOutlines
Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.1,2015-02-06
OptiMOSª3Power-Transistor,100V
BSZ440N10NS3G
RevisionHistory
BSZ440N10NS3 G
Revision:2015-02-06,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2015-02-06
Insert pin numbered package drawing and trr and Qrr values
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.1,2015-02-06