BSZ900N15NS3GATMA1

s BSZ900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking • N-channel, normal level V DS 150 V R DS(on),max 90 mΩ ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ900N15NS3 G PG-TSDSON-8 900N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 13 T C=100 °C 8 Unit A Pulsed drain current2) I D,pulse T C=25 °C 52 Avalanche energy, single pulse E AS I D=10 A, R GS=25 Ω 30 mJ Gate source voltage V GS ±20 V Power dissipation P tot 38 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) Rev. 2.1 55/150/56 J-STD20 and JESD22 page 1 2011-05-16 BSZ900N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.3 - - 60 150 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area3) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=120 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=10 A - 74 90 mΩ V GS=8 V, I D=5 A - 75 91 - 1.7 - Ω 6 12 - S Gate resistance RG Transconductance g fs 3) Rev. 2.1 |V DS|>2|I D|R DS(on)max, I D=10 A see figure 3 page 2 2011-05-16 BSZ900N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 380 510 - 46 61 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 3 - Turn-on delay time t d(on) - 4 - Rise time tr - 4 - Turn-off delay time t d(off) - 8 - Fall time tf - 3 - Gate to source charge Q gs - 1.9 - Gate to drain charge Q gd - 0.9 - - 1.7 - V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=5 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=75 V, I D=5 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 5.0 7 Gate plateau voltage V plateau - 5.2 - Output charge Q oss - 12 17 nC - - 13 A - - 52 - 0.9 1.2 - 59 - 123 V DD=75 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 2.1 T C=25 °C V GS=0 V, I F=13 A, T j=25 °C V R=75 V, I F=5 A , di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition page 3 2011-05-16 BSZ900N15NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 40 15 35 30 10 I D [A] P tot [W] 25 20 15 5 10 5 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs 101 0.5 Z thJC [K/W] 100 µs I D [A] 1 ms 100 0.1 DC 100 0.2 0.05 0.02 0.01 single pulse 10-1 10-1 10-1 100 101 102 103 V DS [V] Rev. 2.1 t p [s] page 4 2011-05-16 BSZ900N15NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 150 140 5V 130 25 10 V 5.5 V 120 6V 110 7V 100 90 R DS(on) [mΩ] I D [A] 20 15 6V 8V 80 10 V 70 60 10 50 40 5.5 V 30 5 20 5V 10 4.5 V 0 0 0 1 2 3 0 4 8 V DS [V] 12 16 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 28 20 24 15 20 I D [A] g fs [S] 16 12 10 8 5 4 150 °C 25 °C 0 0 0 2 4 6 8 V GS [V] Rev. 2.1 0 10 20 30 I D [A] page 5 2011-05-16 BSZ900N15NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=10 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 200 4 180 3.5 160 200 µA 3 20 µA 2.5 120 V GS(th) [V] R DS(on) [mΩ] 140 98 % 100 typ 80 2 1.5 60 1 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 100 Ciss 102 25 °C 150 °C, 98% I F [A] C [pF] Coss 150 °C 10 101 25 °C, 98% Crss 100 1 0 20 40 60 80 100 Rev. 2.1 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2011-05-16 BSZ900N15NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=5 A pulsed parameter: T j(start) parameter: V DD 100 10 120 V 8 75 V 30 V V GS [V] I AS [A] 6 10 4 25 °C 100 °C 2 125 °C 1 0 1 10 100 1000 0 2 4 6 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 170 V GS Qg 165 V BR(DSS) [V] 160 155 150 V g s(th) 145 Q g(th) 140 Q sw Q gs 135 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.1 page 7 2011-05-16 BSZ900N15NS3 G Package Outline: PG-TSDSON-8 Rev. 2.1 page 8 2011-05-16 BSZ900N15NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.1 page 9 2011-05-16