BTM7751GXUMA1

Data Sheet, Rev. 1.0, June 2008 BTM7751G TrilithIC Automotive Power BTM7751G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.2 5.3 5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Sheet 2 8 8 8 8 8 8 8 9 10 10 11 11 12 Rev. 1.0, 2008-06-27 TrilithIC 1 BTM7751G Overview Features • • • • • • • • • • • • • • • • • Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON High side: 70 mΩ typ. @ 25°C, 180 mΩ max. @ 150°C Low side: 45 mΩ typ. @ 25°C, 105 mΩ max. @ 150°C Maximum peak current: typ. 14 A @ 25 °C Very low quiescent current: typ. 5 μA @ 25 °C Small outline, enhanced power PG-DSO-package Operates up to 40 V PWM frequencies up to 1 kHz Status flag diagnosis Short-circuit-protection Overtemperature shut down with hysteresis Internal clamp diodes Open load detection in Off-mode Under-voltage detection with hysteresis Green Product (RoHS compliant) AEC Qualified PG-DSO-28-22 Description The BTM7751G is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames. The sources are connected to individual pins, so the BTM7751G can be used in H-bridge- as well as in any other configuration. Both the double high-side and the two low-side switches of the BTM7751G are manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. Type Package Marking BTM7751G PG-DSO-28-22 BTM7751G Data Sheet 3 Rev. 1.0, 2008-06-27 BTM7751G 2 Pin Configuration 2.1 Pin Assignment DL1 1 28 DL1 IL1 2 27 SL1 DL1 3 26 SL1 N.C. 4 25 DL1 DHVS 5 24 DHVS GND 6 23 SH1 IH1 7 LS-Leadframe 22 SH1 HS-Leadframe ST 8 21 SH2 IH2 9 20 SH2 DHVS 10 19 DHVS N.C. 11 18 DL2 LS-Leadframe Figure 1 Data Sheet DL2 12 17 SL2 IL2 13 16 SL2 DL2 14 15 DL2 Pin Assignment BTM7751G (Top View) 4 Rev. 1.0, 2008-06-27 BTM7751G Table 1 Pin Definitions and Functions Pin No. Symbol Function 1, 3, 25, 28 DL1 Drain of low-side switch1, lead frame 1 1) 2 IL1 Analog input of low-side switch1 4 N.C. not connected 5, 10, 19, 24 DHVS Drain of high-side switches and power supply voltage, lead frame 2 1) 6 GND Ground 7 IH1 Digital input of high-side switch1 8 ST Status of high-side switches; open Drain output 9 IH2 Digital input of high-side switch2 11 N.C. not connected 12, 14, 15, 18 DL2 Drain of low-side switch2, lead frame 3 1) 13 IL2 Analog input of low-side switch2 16,17 SL2 Source of low-side switch2 20,21 SH2 Source of high-side switch2 22,23 SH1 Source of high-side switch1 26,27 SL1 Source of low-side switch1 1) To reduce the thermal resistance these pins are direct connected via metal bridges to the lead frame. Pins written in bold type need power wiring. Data Sheet 5 Rev. 1.0, 2008-06-27 BTM7751G 2.2 Terms VS=12V IS CS 470nF CL 100µF IFH1,2 DHVS IST LK IST 5,10,19,24 ST 8 Diagnosis VST IIH1 VSTL IH1 7 IH2 9 VIH1 GND 6 VIH2 RO1 RO2 Gate Driver 20,21 12,14,15,18 IGND 22,23 1,3,25,28 Protection IL1 2 -VFH2 -VFH1 Biasing and Protection ILKCL IIL1 VDSH1 Gate Driver VSTZ IIH1 VDSH2 SH2 ISH2 DL2 IDL2 IDL LK 2 VUVON SH1 ISH1 VUVOFF DL1 IDL1 IDL LK 1 Gate Driver Protection VIL1 IIL2 IL2 13 Gate Driver VIL th 1 26,27 VIL2 VIL th 2 Figure 2 16,17 SL1 SL2 ISCP L 1 ISCP L 2 ISL1 ISL2 VDSL1 VDSL2 -VFL1 -VFL2 Terms BTM7751G Table 2 HS-Source-Current Named during Short Circuit Named during Leakage-Cond. ISH1,2 ISCP H IDL LK Data Sheet 6 Rev. 1.0, 2008-06-27 BTM7751G 3 Block Diagram DHVS 5,10,19,24 8 ST Diagnosis IH1 7 Biasing and Protection Gate Driver RO1 IH2 9 RO2 Gate Driver 20,21 SH2 12,14,15,18 6 DL2 GND 22,23 1,3,25,28 Protection 2 IL1 SH1 DL1 Gate Driver Protection 13 Gate Driver IL2 26,27 SL1 Figure 3 Data Sheet 16,17 SL2 Block Diagram BTM7751G 7 Rev. 1.0, 2008-06-27 BTM7751G 4 Circuit Description 4.1 Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the internal gate-driving units of the N-channel vertical power-MOS-FETs. 4.2 Output Stages The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. 4.3 Short Circuit Protection The outputs are protected against – output short circuit to ground – output short circuit to the supply voltage, and – overload (load short circuit). An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. 4.4 Overtemperature Protection The high-side and the low-side switches also incorporate an over temperature protection circuit with hysteresis which switches off the output transistors. In the case of the high-side switches, the status output is set to low. 4.5 Undervoltage Lockout When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The High-Side output transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF. 4.6 Open Load Detection The open load detection of the BTM7751G works in OFF condition and is based on a voltage measurement at the source of the high side switch. In order to use the open load detection SH2 has to be connected to Vcc via a pull up resistor. Because this pull up resistor would connect the bridge output to the µC supply it needs to be disconnected whenever the high side switch is on. This can be done by a transistor as shown in the application example (Figure 4 “Application Example BTM7751G” on Page 15). To check for open load: • • • Set IH1 = IH2 = LOW (both high side switches off) Set IL2 = LOW, IL1 = HIGH (only low side switch 1 is on) Connect Rol (open load pull up) to 5V via transistor If the load is connected properly it will pull down the voltage at SH2 to a value close to 0V. If the load is disconnected the resistor will pull the voltage at SH2 to value close to Vcc. If the voltage at SH2 is higher than the open load detection voltage VOUT(OL) then ST will be pulled down. Data Sheet 8 Rev. 1.0, 2008-06-27 BTM7751G 4.7 Status Flag The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the application circuit in Figure 4 “Application Example BTM7751G” on Page 15. Various errors as listed in the table “Diagnosis” are reported by switching the open drain output ST to low. Table 3 Truth table and Diagnosis (valid only for the High-Side-Switches) Flag IH1 IH2 Inputs Normal operation; identical with functional truth table Open load at high-side switch 1 Open load at high-side switch 2 Overtemperature high-side switch1 Overtemperature high-side switch2 Overtemperature both high-side switches Under voltage SH1 SH2 ST Remarks Outputs 0 0 1 1 0 1 0 1 L L H H L H L H 1 1 1 1 stand-by mode switch2 active switch1 active both switches active 0 1 X X X X 0 1 Z H X X X X Z H 0 1 0 1 detected 0 1 X X L L X X 1 0 detected X X 0 1 X X L L 1 0 detected 0 X 1 0 1 X L L L L L L 1 0 0 detected detected X X L L 1 not detected detected Inputs: Outputs: Status: 0 = Logic LOW Z = Output in tristate condition 1 = No error 1 = Logic HIGH L = Output in sink condition 0 = Error X = don’t care H = Output in source condition X = Voltage level undefined Data Sheet 9 Rev. 1.0, 2008-06-27 BTM7751G 5 Electrical Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings1) – 40 °C < Tj < 150 °C Pos. Parameter Symbol Limit Values Unit Remarks min. max. VS VS(SCP) – 0.3 42 V – 28 V IS IIH VIH –7 3) A TA = 25°C; tP < 100 ms –5 5 mA Pin IH1 and IH2 – 10 16 V Pin IH1 and IH2 VST IST – 0.3 5.4 V –5 5 mA Pin ST – V 30 V – 20 V IDL VIL –7 3) A VIL = 0 V; ID ≤ 1 mA VIL = 5 V VIL = 10 V TA = 25°C; tP < 100 ms – 0.3 10 V – Tj Tstg – 40 150 °C – – 55 150 °C – VESD VESD VESD VESD – 2 kV – 1 kV – 2 kV – 8 kV High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) 5.1.1 Supply voltage 5.1.2 Supply voltage for full short circuit protection 5.1.3 HS-drain current2) 5.1.4 HS-input current 5.1.5 HS-input voltage – Status Output ST 5.1.6 Status pull up voltage 5.1.7 Status Output current 5.1.8 Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2) 5.1.9 VDSL 42 Supply voltage for short circuit protection VDSL(SCP) – 5.1.10 Drain-Source-Clamp voltage 5.1.11 2) 5.1.12 LS-drain current 5.1.13 LS-input voltage Temperatures 5.1.14 Junction temperature 5.1.15 Storage temperature ESD Protection4) 5.1.16 Input LS-Switch 5.1.17 Input HS-Switch 5.1.18 Status HS-Switch 5.1.19 Output LS and HS-Switch 1) 2) 3) 4) all other pins connected to Ground Not subject to production test; specified by design Single pulse Internally limited ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF) Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 10 Rev. 1.0, 2008-06-27 BTM7751G 5.2 Pos. Functional Range Parameter Symbol Limit Values min. max. Unit Remarks 5.2.20 Supply voltage VS VUVOFF 42 V After VS rising above VUVON 5.2.21 Input voltage HS – 0.3 15 V – 5.2.22 Input voltage LS – 0.3 10 V – 5.2.23 Status output current 0 2 mA – 5.2.24 Junction temperature VIH VIL IST Tj – 40 150 °C – Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table 5.3 Pos. Thermal Resistance Parameter Symbol 5.3.25 LS-junction to soldering point1) 5.3.26 1) 5.3.27 HS-junction to soldering point 1) Junction to Ambient RthJA = Tj(HS) / (P(HS)+ P(LS)) RthJSP RthJSP RthJA Limit Values Unit Conditions 20 K/W measured to pin 3 or 12 20 K/W measured to pin 19 K/W 2) Min. Typ. Max. – – – – – 36 – 1) Not subject to production test, specified by design. 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Data Sheet 11 Rev. 1.0, 2008-06-27 BTM7751G 5.4 Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 5 9 μA IH1 = IH2 = 0 V Tj = 25 °C – – 13 μA IH1 = IH2 = 0 V 2.1 4.3 mA Current Consumption HS-switch 5.4.28 Quiescent current IS Supply current; one HS-switch active IS – 5.4.30 Supply current; both HS-switches active IS – 4.3 8.6 mA IH1 and IH2 = 5 V VS = 12 V 5.4.31 Leakage current of high-side switch ISH LK – – 6 μA 5.4.32 Leakage current through logic GND in free wheeling condition ILKCL = IFH + – ISH – 10 mA VIH = VSH = 0 V VS = 12 V IFH = 3 A VS = 12 V IIL – 8 30 μA VIL = 5 V; normal operation – 160 300 μA VIL = 5 V; IDL LK – 2 10 μA VIL = 0 V VDSL = 18 V VUVON VUVOFF VUVHY – – 4.8 V 1.8 – 3.5 V – 1 – V VS increasing VS decreasing VUVON – VUVOFF 5.4.29 IH1 or IH2 = 5 V VS = 12 V Current Consumption LS-switch 5.4.33 Input current failure mode 5.4.34 Leakage current of low-side switch Under Voltage Lockout HS-switch 5.4.35 Switch-ON voltage 5.4.36 Switch-OFF voltage 5.4.37 Switch ON/OFF hysteresis Output stages 5.4.38 Inverse diode of high-side switch; Forward-voltage VFH – 0.8 1.2 V IFH = 3 A 5.4.39 Inverse diode of low-side switch; Forward-voltage VFL – 0.8 1.2 V IFL = 3 A 5.4.40 Static drain-source on-resistance of high-side switch RDS ON H – 70 – mΩ – 125 180 mΩ – 45 – mΩ – 75 105 mΩ ISH = 1 A; VS = 12 V Tj = 25 °C ISH = 1 A; VS = 12 V Tj = 150 °C ISL = 1 A; VIL = 5 V Tj = 25 °C ISL = 1 A; VIL = 5 V Tj = 150 °C 5.4.41 Static drain-source on-resistance of low-side switch Data Sheet RDS ON L 12 Rev. 1.0, 2008-06-27 BTM7751G ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. 15 19 23 A Tj = – 40 °C – 14 – A Tj = + 25 °C 8 10 13 A Tj = + 150 °C RO 8 15 35 kΩ VDSL = 3 V ISCP L 23 28 34 A Tj = – 40 °C – 22 – A Tj = 25 °C 11.5 14 18 A Tj = 150 °C Short Circuit of high-side switch to GND 5.4.42 Initial peak SC current tdel = 100 µs; VS = 12 V; VDSH = 12V ISCP H Short Circuit of high-side switch to VS 5.4.43 Output pull-down-resistor Short Circuit of low-side switch to VS 5.4.44 Initial peak SC current VDSL = 12V; VIL = 5V; tdel = 250 µs 1) Thermal Shutdown 5.4.45 Thermal shutdown junction temperature Tj SD 155 180 190 °C – 5.4.46 Thermal switch-on junction temperature Tj SO 150 170 180 °C – 5.4.47 Temperature hysteresis ΔΤ – 10 – °C ΔΤ = TjSD – TjSO VST L IST LK VST Z – 0.2 0.6 V IST = 1.6 mA – – 10 μA VST = 5 V 5.4 – – V IST = 1.6 mA 1.8 2.8 4 V – – 500 μs Status Flag Output ST of high-side switch 5.4.48 Low output voltage 5.4.49 Leakage current 5.4.50 Zener-limit-voltage Open load detection in Off condition 5.4.51 5.4.52 VOUT(OL) Status change after neg. input slope td(OL) Open load detection voltage VS = 12 V with OL Data Sheet 13 Rev. 1.0, 2008-06-27 BTM7751G ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. tON tOFF dV/dtON -dV/dtOFF – 85 180 μs – 80 180 μs – – 1.2 V/μs – – 1.6 V/μs – 60 150 μs – 60 150 μs 1) Switching times of high-side switch 5.4.53 Turn-ON-time to 90% VSH 5.4.54 Turn-OFF-time to 10% VSH 5.4.55 Slew rate on 10 to 30% VSH 5.4.56 Slew rate off 70 to 40% VSH RLoad = 12 Ω VS = 12 V 1) Switching times of low-side switch RLoad = 10 Ω VS = 12 V VIL = 0 to 5 V 5.4.57 Turn-ON-time to 10% VDL 5.4.58 Turn-OFF-time to 90% VDL tON tOFF 5.4.59 Slew rate on 70 to 50% VDL -dV/dtON – 1 1.5 5.4.60 Slew rate off 50 to 70% VDL dV/dtOFF – 1 1.5 V/μs RLoad = 4.7 Ω V/μs VS = 12 V VIL = 0 to 5 V VIH High VIH Low VIH HY IIH High IIH Low RI VIH Z – – 2.5 V – 1 – – V – – 0.3 – V – 15 30 60 μA 5 – 20 μA VIH = 5 V VIH = 0.4 V 2.7 4 5.5 kΩ – 5.4 – – V IIH = 1.6 mA VIL th 0.9 1.7 2.2 V IDL = 2 mA Control Inputs of high-side switches IH 1, 2 5.4.61 H-input voltage 5.4.62 L-input voltage 5.4.63 Input voltage hysteresis 5.4.64 H-input current 5.4.65 L-input current 5.4.66 Input series resistance 5.4.67 Zener limit voltage Control Inputs IL1, 2 5.4.68 Gate-threshold-voltage 1) Not subject to production test; specified by design Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specified mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Data Sheet 14 Rev. 1.0, 2008-06-27 BTM7751G 6 Application Information Note: The following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. The function of the described circuits must be verified in the real application Watchdog Reset Q RQ 100 kΩ WD R CQ 22µF TLE 4278G I VS=12V D CS 10µF D01 Z39 CD 47nF VCC DHVS BCR192W 5,10,19,24 RS ST 8 to µC 10 kΩ Diagnosis Biasing and Protection ROL 10 kΩ IH1 7 IH2 9 GND 6 optional for open load in off Gate Driver RO1 XC866 µP RO2 Gate Driver 20,21 12,14,15,18 22,23 1,3,25,28 Protection IL1 2 SH2 DL2 SH1 M DL1 Gate Driver Protection IL2 13 Gate Driver 26,27 GND SL1 16,17 SL2 In case of VDSL