Data Sheet, Rev. 2.0, May 2010
BTM7752G
High Current H-Bridge
Trilith IC 3G
Automotive Power
High Current H-Bridge
BTM7752G
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4
4.1
4.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5
5.1
5.2
5.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6.1
6.2
6.2.1
6.2.2
6.2.3
6.3
6.3.1
6.3.2
6.3.3
6.3.4
6.3.5
6.3.6
6.4
6.4.1
6.4.2
6.4.3
6.4.4
6.4.5
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Status Flag Diagnosis with Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7
7.1
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Application and Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Data Sheet
2
6
6
7
8
Rev. 2.0, 2010-05-28
High Current H-Bridge
Trilith IC 3G
1
BTM7752G
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Integrated high current H-Bridge
Path resistance of max. 295 mΩ @ 150 °C (typ. 150 mΩ @ 25 °C)
Low quiescent current of typ. 5µA @ 25 °C
PWM capability of up to 25kHz combined with active freewheeling
Current limitation level of 12 A typ. (8 A min.)
Driver circuit with logic inputs
Status flag diagnosis with current sense capability
Overtemperature shut down with latch behaviour
PG-DSO-36-29
Overvoltage lock out
Undervoltage shut down
Switch-mode current limitation for reduced power dissipation in overcurrent situation
Integrated dead time generation
Operation up to 28V
Green Product (RoHS compliant)
AEC Qualified
Description
The BTM7752G is a fully integrated high current H-bridge for motor drive applications. It contains two p-channel
highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one package. Due to the
p-channel highside switches the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and
short circuit.
The BTM7752G provides an optimized solution for protected high current PWM motor drives with very low board
space consumption.
Type
Package
Marking
BTM7752G
PG-DSO-36-29
BTM7752G
Data Sheet
3
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Diagram
2
Block Diagram
VS
VS
Overtemp.
detection
Current
Sense
HS1
HS1
Undervolt.
detection
Overcurr.
Detection
HS1
Current
Sense
HS2
Overvolt.
detection
Overcurr.
Detection
HS2
Gate Driver
HS
HS off
OUT1
HS2
Gate Driver
HS
Digital Logic
LS off
LS off
Gate Driver
LS
HS off
OUT2
Gate Driver
LS
Overcurr.
Detection
LS1
Overcurr.
Detection
LS2
LS1
LS2
GND
GND
IN1
Figure 1
Block Diagram
3
Terms
IN2
INH
IS
following figure shows the terms used in this data sheet.
IS , -ID(HS)
VS
IIN1
VDS(HS)
VS
IN1
VIN1
IOUT , ID, IL
I IN2
VIN2
OUT1
IN2
VSD(LS)
IINH
VINH
VOUT
IOUT , ID, IL
INH
OUT2
IIS
VIS
VDS(HS)
VSD(LS)
IS
VOUT
GND
IGND , I D(LS)
Figure 2
Data Sheet
Terms
4
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Pin Configuration
4
Pin Configuration
4.1
Pin Assignment
OUT1
1
36
OUT1
OUT1
2
35
OUT1
OUT1
3
34
OUT1
OUT1
4
33
OUT1
GND
5
32
VS
GND
6
31
VS
GND
7
30
VS
GND
8
29
VS
IN1
9
28
IS
IN2
10
27
INH
VS
11
26
GND
VS
12
25
GND
VS
13
24
GND
VS
14
23
GND
OUT2
15
22
OUT2
OUT2
16
21
OUT2
OUT2
17
20
OUT2
OUT2
18
19
OUT2
Figure 3
Pin Configuration BTM7752G
4.2
Pin Definitions and Functions
Pins written in bold type need power wiring.
Pin
Symbol
Function
1..4, 33..36
OUT1
Output of first half bridge
5..8, 23..26
GND
Ground
9
IN1
Input of first half bridge
10
IN2
Input of second half bridge
11..14, 29..32
VS
Supply, all pins to be connected and shorted externally
15..22
OUT2
Output of second half bridge
27
INH
Inhibit pin, to set device in sleep/stand-by mode
28
IS
Current sense and error signal
Data Sheet
5
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
General Product Characteristics
5
General Product Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
Pos.
Parameter
5.1.1
Supply voltage
5.1.2
Logic Input Voltage
5.1.3
HS/LS continuous drain current
5.1.4
Voltage between VS and IS pin
Symbol
Limit Values
Unit
Conditions
Min.
Max.
VS
VIN1,VIN2,
VINH
ID(HS)
ID(LS)
VS -VIS
-0.3
45
V
–
-0.3
5.5
V
–
-4
4
A
TC < 85°C
switch active
-0.3
45
V
–
Tj
Tstg
-40
150
°C
–
-55
150
°C
–
kV
HBM2)
Thermal Maximum Ratings
5.1.5
Junction temperature
5.1.6
Storage temperature
ESD Susceptibility
5.1.7
ESD susceptibility
VESD
IN1, IN2, IS, INH
OUT1, OUT2, GND, VS
-2
-4
2
4
1) Not subject to production test, specified by design.
2) HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
6
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
General Product Characteristics
Maximum Single Pulse Current
20
Imax [A]
15
10
5
0
0.0001
0.001
0.01
0.1
1
10
100
tpulse [s]
BTM7752G Maximum Single Pulse Current (TC = Tj(0) < 85°C)
Figure 4
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
5.2
Pos.
Functional Range
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Conditions
5.2.1
Supply Voltage Range for
Normal Operation
VS(nor)
8
18
V
VS pins shorted
5.2.2
Extended Supply Voltage Range
for Operation
VS(ext)
5.5
28
V
VS pins shorted;
Parameter
deviations possible;
1)
5.2.3
Junction Temperature
Tj
-40
150
°C
–
1) Overtemperature protection available up to supply voltage VS = 18V.
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
Data Sheet
7
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
General Product Characteristics
5.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
5.3.1
Thermal Resistance
Junction to Soldering Point, Low Side Switch
RthjSP(LS) = ΔTj(LS)/ Pv(LS)
RthjSP(LS) –
–
29
K/W
1)
5.3.2
Thermal Resistance
Junction to Soldering Point, High Side Switch
RthjSP(HS) = ΔTj(HS)/ Pv(HS)
RthjSP(HS) –
–
29
K/W
1)
5.3.3
Thermal Resistance
Junction to Soldering Point, both switches
RthjSP= max[ΔTj(HS), ΔTj(LS)] /
(Pv(HS) + Pv(LS))
RthjSP
–
–
29
K/W
1)
5.3.4
Thermal Resistance
Junction-Ambient
Rthja
–
46
–
K/W
1) 2)
;
1) Not subject to production test, specified by design.
2) Specified Rthja value is according to Jedec JESD51-2, -7 at natural convection on FR4 2s2p board; The product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Transient thermal impedance Zthja
Figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7752G mounted
according to JEDEC JESD51-7 at natural convection on FR4 2s2p board. The device (chip+package) was
simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). For the
simulation each chip was separately powered with 1W at an ambient temperature Ta of 85°C.
50
45
40
Zth-ja [K/W]
35
30
25
20
15
10
5
0
0,001
High side sw itch / Low side sw itch
0,01
0,1
1
10
100
1000
tpulse [s]
Figure 5
Data Sheet
Typical transient thermal impedance of BTM7752G on JESD51-7 2s2p board
(1W each chip (separately heated), Ta = 85°C, single pulse)
8
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6
Block Description and Characteristics
6.1
Supply Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0A, VS pins shorted, all voltages with respect to ground, positive
current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Test Conditions
General
6.1.1
Supply Current
IS(on)
–
5
9.5
mA
VINH or VIN1 or VIN2 = 5 V
DC-mode
normal operation
(no fault condition)
6.1.2
Quiescent Current
IS(off)
–
5
15
µA
VINH = VIN1 = VIN2 = 0 V
Tj < 85 °C; 1)
–
–
30
µA
VINH = VIN1 = VIN2 = 0 V
1) Not subject to production test, specified by design.
I S ( o f f ) [µA]
10
9
8
7
6
5
4
3
2
1
0
-40
0
40
80
120
160
T [°C]
Figure 6
Data Sheet
Typical Quiescent Current vs. Junction Temperature (typ. @ VS = 13.5V)
9
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2
Power Stages
The power stages of the BTM7752G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 7.
Low Side Switch
High Side Switch
220
RON(LS) [mΩ]
RON(HS) [mΩ]
160
140
120
100
200
Tj = 150°C
180
160
Tj = 150°C
140
120
80
Tj = 25°C
100
Tj = 25°C
60
80
Tj = -40°C
Tj = -40°C
60
40
40
20
20
0
0
4
8
12
16
20
24
28
4
VS [V]
Figure 7
Data Sheet
8
12
16
20
24
28
VS [V]
Typical On State Resistance vs. Supply Voltage
10
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Test Conditions
mΩ
IOUT = 1 A
VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
µA
VINH = VIN1 = VIN2 = 0 V
VOUT = 0 V
Tj < 85 °C; 1)
Tj = 150 °C
V
IOUT = -1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
mΩ
IOUT = -1 A
VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
µA
VINH = VIN1 = VIN2 = 0 V
VOUT = VS
Tj < 85 °C; 1)
Tj = 150 °C
V
IOUT = 1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
Max.
High Side Switch - Static Characteristics
6.2.1
On state high side resistance RON(HS)
–
–
6.2.2
Leakage current high side
60
85
IL(LKHS)
–
–
6.2.3
Reverse diode
forward-voltage high side 2)
–
115
–
–
1
5
VDS(HS)
–
–
–
0.9
0.8
0.6
–
–
0.8
Low Side Switch - Static Characteristics
6.2.4
On state low side resistance RON(LS)
–
–
6.2.5
6.2.6
Leakage current low side
Reverse diode
forward-voltage low side 2)
90
150
–
180
-IL(LKLS)
–
–
–
–
1
3
–
–
–
0.9
0.8
0.6
–
–
0.8
VSD(LS)
1) Not subject to production test, specified by design.
2) Due to active freewheeling diode is conducting only for a few µs.
Data Sheet
11
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2.2
Switching Times
IN
tdr(HS )
t df (HS ) tf (HS )
t r(HS )
t
V OUT
90%
90%
ΔVOUT
ΔVOUT
40%
40%
t
Figure 8
Definition of switching times high side (Rload to GND)
IN
tdf (LS )
tf (LS )
t dr(LS ) tr(LS )
t
V OUT
60%
60%
ΔVOUT
ΔVOUT
10%
10%
t
Figure 9
Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
•
ΔtHS = (tdr(HS) + 0.2 tr(HS)) - (tdf(HS) + 0.8 tf(HS))
ΔtLS = (tdf(LS) + 0.2 tf(LS)) - (tdr(LS) + 0.8 tr(LS)).
Data Sheet
12
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2.3
Power Stages - Dynamic Characteristics
VS = 13.5V, Tj = -40 °C to +150 °C, RLoad = 12 Ω, VINH = 5V, VS pins shorted, all voltages with respect to ground,
positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Test Conditions
High Side Switch Dynamic Characteristics
6.2.7
Rise-time of HS
tr(HS)
0.35
0.7
1.05
µs
–
6.2.8
Slew rate HS on
ΔVOUT/
–
9.6
–
V/µs
–
6.2.9
Switch on delay time HS
3
5
8
µs
–
6.2.10
Fall-time of HS
tr(HS)
tdr(HS)
tf(HS)
0.35
0.7
1.05
µs
–
6.2.11
Slew rate HS off
-ΔVOUT/
–
9.6
–
V/µs
–
6.2.12
Switch off delay time HS
tf(HS)
tdf(HS)
1.5
3.5
5.5
µs
–
Low Side Switch Dynamic Characteristics
6.2.13
Rise-time of LS
tr(LS)
0.4
0.8
1.2
µs
–
6.2.14
Slew rate LS off
ΔVOUT/
–
8.4
–
V/µs
–
6.2.15
Switch off delay time LS
1.5
3.5
5.5
µs
–
6.2.16
Fall-time of LS
tr(LS)
tdr(LS)
tf(LS)
0.35
0.8
1.2
µs
–
6.2.17
Slew rate LS on
-ΔVOUT/
–
8.4
–
V/µs
–
Switch on delay time LS
tf(LS)
tdf(LS)
2.5
5
7.5
µs
–
6.2.18
6.3
Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 6.3.4). Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at
the IS pin as described in the paragraph “Status Flag Diagnosis with Current Sense Capability” on Page 17
and Figure 13.
In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other
error modes.
6.3.1
Overvoltage Lock Out
To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts both lowside
MOSFETs off and turns both highside MOSFET on, if the supply voltage VS is exceeding the over voltage
protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage
decreases below the switch-on voltage VOV(ON). This behavior of the BTM7752G will lead to freewheeling in
highside during over voltage.
Data Sheet
13
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.3.2
Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (both outputs are tri-state),
if the supply voltage VS drops below the switch-off voltage VUV(OFF). In this case all latches will be reset. The IC
becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).
6.3.3
Overtemperature Protection
The BTM7752G is protected against overtemperature by integrated temperature sensors. Each half bridge, which
consists of one high side and one low side switch, is protected by one temperature sensor located in the high side
switch. Both temperature sensors function independently. A detection of overtemperature through temperature
sensor leads to a shut down of both switches in the half bridge. This state is latched until the device is reset by a
low signal with a minimum length of treset simultaneously at the INH pin and both IN pins, provided that its
temperature has decreased at least the thermal hysteresis ΔT in the meantime.
Overtemperature protection is available up to supply voltage VS = 18V.
For sufficient over temperature protection please consider also operation below the limitations outlined in Figure
4 and Figure 5.
Repetitive use of the overtemperature protection might reduce lifetime.
6.3.4
Current Limitation
The current in the bridge is measured in all four switches. As soon as the current in forward direction in one switch
is reaching the limit ICLx, this switch is deactivated for tCLS. In case of INH = 5V (high) the other switch of the same
half bridge is activated for the same time (tCLS). During that time all changes at the related IN pin are ignored.
However, the INH pin can still be used to switch all MOSFETs off. After tCLS the switches return to their initial
setting. The error signal at the IS pin is reset after 1.5 * tCLS if no overcurrent state is detected in the meantime.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current di/dt as shown in Figure 11.
IL
t C LS
1. 5*tC LS
IC Lx
I C Lx 0
O
t
IIS
I I S (l i m )
O
Figure 10
Data Sheet
t
Timing Diagram Current Limitation and Current Sense
14
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
Low Side Switch
High Side Switch
14
Tj = -40°C
13
ICLH0
I C L L [A]
I C L H [A]
14
Tj = 25°C
Tj = 150°C
Tj = -40°C
13
ICLL0
Tj = 25°C
Tj = 150°C
12
12
11
11
10
10
0
50
100
0
150
50
100
dIL/dt [A/ms]
dIL/dt [A/ms]
Current Limitation Level vs. Current Slew Rate dIL/dt
Figure 11
Low Side Switch
High Side Switch
16
16
15
15
14
14
13
ICLL [A]
IC LH [A]
150
Tj = -40°C
Tj = 25°C
12
Tj = 25°C
12
Tj = 150°C
11
13
Tj = -40°C
11
10
10
9
9
Tj = 150°C
8
8
6
10
14
18
22
6
26
10
18
22
26
VS [V]
VS [V]
Figure 12
14
Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage that the power dissipation in the BTM7752G is much smaller
than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time
without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start
up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
Data Sheet
15
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.3.5
Short Circuit Protection
The device provides embedded protection functions against
•
•
•
output short circuit to ground
output short circuit to supply voltage
short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down (see Chapter 6.3.3) of the device.
6.3.6
Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Test Conditions
Over Voltage Lock Out
6.3.1
Switch-ON voltage
VOV(ON)
27.8
–
–
V
Vs decreasing
6.3.2
Switch-OFF voltage
VOV(OFF)
28
–
30
V
Vs increasing
6.3.3
ON/OFF hysteresis
VOV(HY)
–
0.2
–
V
1)
Under Voltage Shut Down
6.3.4
Switch-ON voltage
VUV(ON)
–
–
5.5
V
VS increasing
6.3.5
Switch-OFF voltage
VUV(OFF)
4.0
–
5.4
V
VS decreasing
6.3.6
ON/OFF hysteresis
VUV(HY)
–
0.2
–
V
1)
Thermal Shut Down
6.3.7
Thermal shut down junction
temperature
TjSD
155
175
200
°C
1)
6.3.8
Thermal switch on junction
temperature
TjSO
153
–
190
°C
1)
6.3.9
Thermal hysteresis
ΔT
–
7
–
°C
1)
6.3.10
Reset pulse at INH and IN pin treset
(INH, IN1 and IN2 low)
8
–
–
µs
1)
;
VS ≤ 18 V
Current Limitation
6.3.11
Current limitation detection
level high side
ICLH0
8
12
16
A
VS = 13.5 V
6.3.12
Current limitation detection
level low side
ICLL0
8
12
16
A
VS = 13.5 V
6.3.13
Shut off time for HS and LS
tCLS
50
100
200
µs
VS = 13.5 V, Tj = 25 °C
1) Not subject to production test, specified by design.
Data Sheet
16
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.4
Control and Diagnostics
6.4.1
Input Circuit
The control inputs INx and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. To set the device in stand-by mode, INH and INx pins need to be all
connected to GND. When the INH is high, in each half bridge one of the two power switches (HSx or LSx) is
switched on, while the other power switch is switched off, depending on the status of the INx pin. When INH is low,
a high INx signal will turn the corresponding highside switches on. This provides customer the possibility to switch
on one high side switch while keeping the other switches off and therefore to do an open load detection together
with external circuitry (see also Chapter 7 - Application Information). A low on all INx and INH signal will turn off
both power switches. To drive the logic inputs no external driver is needed, therefore the BTM7752G can be
interfaced directly to a microcontroller.
6.4.2
Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, which senses the
status of the MOSFETs to ensure that the high or low side switch can be switched on only if the corresponding
low or high side switch is completely turned off.
6.4.3
Status Flag Diagnosis with Current Sense Capability
The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense
mode), a current source is connected to the status pin, which delivers a current proportional to the forward load
current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the
reverse direction no current will be driven except for a marginal leakage current IIS(LK). If both high side switches
are in on state, the IS provides the sense current of the high side switch, which has been turned on first. To reset
this assignment both inputs IN1 and IN2 has to be set to low and both high side switches has to be off.
The external resistor RIS determines the voltage per output current. E.g. with the nominal value of 3.1k for the
current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1kΩ leads to VIS = (IL / 3.1A)V. In case of a fault condition
the status output is connected to a current source which is independent of the load current and provides IIS(lim).
The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In
case of current limitation the IIS(lim) is activated for 1.5 * tCLS.
Normal operation:
current sense mode
Fault condition:
error flag mode
VS
VS
ESD-ZD
IIS~ ILoad
IIS(lim)
Figure 13
Data Sheet
ESD-ZD
IS
Sense
output
logic
R IS VIS
IIS(lim)
Sense
output
logic
IS
RIS
VIS
Sense current and fault current
17
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
IIS
[mA]
IIS(lim)
er
low
is
kil
lue
va
u
val
lis
i
k
her
hig
e
Current Sense Mode
(High Side)
Error Flag Mode
ICLx
Figure 14
Data Sheet
IL
[A]
Sense Current vs. Load Current
18
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.4.4
Truth Table
Device State
Normal operation
Inputs
Mode
INH
IN1
IN2
HS1 LS1 HS2 LS2
0
0
0
OFF OFF OFF OFF 0
1
0
0
OFF ON
1
1
1
Open-Load detection
mode
Outputs
0
0
0
1
1
0
1
1
0
1
1
0
OFF ON
ON
ON
OFF ON
ON
0
–
1)
–
1)
–
CS HS1
OFF CS
2)
–
OFF CS HS2
1)
Enable Open-load detection
OFF OFF OFF CS HS1
1)
Enable Open-load detection
OFF OFF ON
ON
Stand-by mode, reset
OFF CS HS2
OFF OFF ON
OFF ON
IS
0
1
1
ON
OFF ON
OFF CS
Over-voltage (OV)
X
X
X
ON
OFF ON
OFF 1
Under-voltage (UV)
2)
Shut-down of LSS, HSS
activated, error detected
X
X
X
OFF OFF OFF OFF 0
UV lockout, reset
Overtemperature or
0
short circuit of HSS or 1
LSS 3)
X
0
0
OFF OFF OFF OFF 0
Stand-by mode, reset of latch
X
X
OFF OFF OFF OFF 1
1
X
Shut-down with latch, error
detected
X
X
1
1
0
X
ON
1
1
X
OFF ON
0
1
1
Current limitation
mode half bridge 1
Current limitation
mode half bridge 2
OFF X
X
1
Short Circuit in LS1 detected,
half bridge 2 operates in normal
mode
X
X
1
Short Circuit in HS1 detected,
half bridge 2 operates in normal
mode
X
OFF OFF X
X
1
Short Circuit in HS1 detected
X
0
X
X
ON
OFF 1
1
X
1
X
X
OFF ON
0
X
1
X
X
OFF OFF 1
1
Short Circuit in LS2 detected,
half bridge 1 operates in normal
mode
Short Circuit in HS2 detected,
half bridge 1 operates in normal
mode
Short Circuit in HS2 detected
1) Previous current sense assignment to be reset by IN1=IN2=low and both high side switches off (see Chapter 6.4.3).
2) When both high side switches are in on state, the CS provides the sense signal for the high side switch, which has been
turned on first.
3) In short circuit of HSS or LSS, the junction temperature will arise and as soon as the over temperature shut down threshold
is reached the device will shut down and latch the status. Short circuit of HSS and LSS itself won’t be detected as failure.
Inputs:
Switches
Status Flag IS:
0 = Logic LOW
OFF = switched off
CS = Current sense mode
1 = Logic HIGH
ON = switched on
1 = Logic HIGH (error)
X = 0 or 1
X = switched on or off
Data Sheet
19
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.4.5
Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Test Conditions
Control Inputs (IN and INH)
6.4.1
High level threshold voltage VINH(H),
–
INH, IN1, IN2
VIN1(H), VIN2(H)
1.6
2
V
–
6.4.2
Low level threshold voltage VINH(L),
1.1
INH, IN1, IN2
VIN1(L), VIN2(L)
1.4
–
V
–
6.4.3
Input voltage hysteresis
VINHHY,VINHY
–
200
–
mV
1)
6.4.4
Input current
IINH(H),
IIN1(H), IIN2(H)
–
30
200
µA
VIN1,VIN2,VINH = 5.5 V
6.4.5
Input current
IINH(L),
IIN1(L), IIN2(L)
–
25
125
µA
VIN1, VIN2, VINH = 0.4 V
103
RIS = 1 kΩ
Current Sense
6.4.6
6.4.7
Current sense ratio in static kILIS
on-condition
kILIS = IL / IIS
2
1.7
1.5
3.1
3.1
3.1
4.2
4.6
5
IL = 6 A
IL = 2 A
IL = 1 A
103
RIS = 1 kΩ
Differential Current sense
ratio in static on-condition
dkILIS = dIL /dIIS
dkILIS
6.4.8
Maximum analog sense
current - Sense current in
fault condition
IIS(lim)
4.25
5
7
mA
VS = 13.5 V
RIS = 1 kΩ
6.4.9
Isense leakage current
IISL
–
–
1
µA
VIN1 = VIN2 = 0 V,
no error detected
6.4.10 Isense leakage current,
active high side switch
IISH
–
1
100
µA
VIN1 or VIN2 = 5 V
IL = 0 A
2
3.1
4.2
IL > 0.5 A
1)
1) Not subject to production test, specified by design.
Data Sheet
20
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Application Information
7
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
Microcontroller
Voltage Regulator
XC866
WO
I/O
RO
Reset
Vdd
I/O
I/O
I/O
I/O
I/O
D
Vss
GND
R1
10kΩ
e.g.
IPD50P03P4L-11
VS
VS
HS1
VS
DZ1
10V
CD
47nF
BTM7752G
INH
I
Q
CQ
22µF
I/O
TLE
4278G
Reverse Polarity
Protection
HS2
CSc
CS
RINH
4.7kΩ
IN1
OUT1
RIN1
4.7kΩ
IN2
IS
LS1
LS2
GND
GND
RIS
1kΩ
Figure 15
M
OUT2
RIN2
4.7kΩ
RD1
RD2
Application Diagram
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
7.1
Application and Layout Considerations
Due to the fast switching times for high currents, special care has to be taken during the PCB layout. Stray
inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges.
The BTM7752G has no separate pin for power ground and logic ground. Therefore it is recommended to ensure
that the offset between power ground and logic ground pins of the device is minimized. It is also
necessary to ensure that all VS pins are at the same voltage level. Therefore the VS pins need to be
shorted together. Voltage differences between the VS pins may cause parameter deviations (such as reduced
current limits and current sense ratio (kilis)) up to a latched shutdown of the device with error signal on the IS pin,
similar to overtemperature shutdown.
Due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low ESR
electrolytic capacitor Cs of at least 100 µF from VS to GND is recommended. This prevents destructive voltage
peaks and drops on VS. This is recommended for both PWM and non PWM controlled applications. The value of
the capacitor must be verified in the real application.
In addition a ceramic capacitor Csc from VS to GND close to each device is recommended to provide current for
the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable
value for this capacitor would be about 470 nF.
Data Sheet
21
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Application Information
It is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended
overtemperature detection and shutdown. For proper operation it is also recommended to put a pull-down resistor
RDx on each output OUTx to GND with a value in the range of e.g. 1...10 kΩ. These resistors can also be used for
open load detection.
Considerations for Open Load Detection Mode
As mentioned in Chapter 6.4.1 both high side switches can be switched on independently while all other switches
are off. This will be realized by setting the corresponding IN signal to high while INH and the other IN are low.
Device State
Open-Load detection
mode
Inputs
Outputs
Mode
INH
IN1
IN2
HS1
LS1
HS2
LS2
IS
0
0
1
OFF
OFF
ON
OFF
CS HS21) HS2 active
0
1
0
ON
OFF
OFF
OFF
CS HS11) HS1 active
0
1
1
ON
OFF
ON
OFF
CS2)
both HSx are active
1) Previous current sense assignment to be reset by IN1=IN2=low and both high side switches off (see Chapter 6.4.3)
2) When both high side switches are in on state, the CS provides the sense signal for the high side switch, which has been
turned on at first.
Together with the recommended pull-down resistors on the outputs OUTx to GND this provides the possibility to
do an open load detection in H-bridge configuration.
In case of one high side is active while the other half bridge is off (HS off and LS off) a current of up to 2mA will
be sourced out of the OUT of the high ohmic half bridge. This has to be considered while choosing the right value
of the pull-down resistor.
Data Sheet
22
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Package Outlines
C
17 x 0.65 = 11.05
0.33 ±0.08
1.1
7.6 -0.2 1)
0.1 C 36x
SEATING PLANE
0.23 +0.09
0.35 x 45˚
8˚ MAX.
0.65
2.65 MAX.
Package Outlines
0.2 -0.1
STAND OFF
2.45 -0.2
8
0.7 ±0.2
10.3 ±0.3
D
2)
0.17 M C A-B D 36x
A
36
1
19
Ejector Mark
Depth 0.2 MAX.
18
B
1)
12.8 -0.2
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.05 max. per side
PG-DSO-36-20, -29, -34, -43, -44-PO V05
Footprint
0.45
0.65
1.67
9.73
HLGF1145
Figure 16
PG-DSO-36-29 (Plastic Green Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
23
Dimensions in mm
Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Revision History
9
Revision History
Revision
Date
Changes
2.0
2010-05-28
Initial version Data Sheet
Data Sheet
24
Rev. 2.0, 2010-05-28
Edition 2010-05-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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