Speed TEMPFET
BTS244Z
Speed TEMPFET®
®
N-Channel
Enhancement mode
1
1
Logic Level Input
Analog driving possible
5
PG-TO263-5-2
5
PG-TO220-5-12
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection •Green Product (RoHS Compliant)
•AEC Qualified
Avalanche rated
Type
VDS RDS(on)
Package
BTS244Z E3062A
55 V 13 m
PG-TO263-5-2
PG-TO220-5-12
BTS244Z E3043
D Pin 3 and TAB
G Pin 1
A Pin 2
Temperature
Sensor
K Pin 4
S Pin 5
Data Sheet
Pin
Symbol
Function
1
G
Gate
2
A
Anode Temperature Sensor
3
D
Drain
4
K
Cathode Temperature Sensor
5
S
Source
1
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
V
55
Gate source voltage
VGS
20
Nominal load current (ISO 10483)
ID(ISO)
Drain-gate voltage, RGS = 20 k
DGR
Value
Unit
V
55
A
VGS = 4.5 V, VDS
0.5 V, TC = 85 °C
19
VGS = 10 V, VDS
0.5 V, TC = 85 °C
26
ID
35
Pulsed drain current
ID puls
188
Avalanche energy, single pulse
EAS
1.65
J
Ptot
170
W
-40 ...+175
°C
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
ID = 19 A, RGS = 25
Power dissipation
TC = 25 °C
Operating temperature 2)
Tj
Peak temperature ( single event )
Tjpeak
Storage temperature
Tstg
200
-55 ... +150
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet
2
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
junction - case:
RthJC
-
-
0.88
Thermal resistance @ min. footprint
Rth(JA)
-
-
62
Thermal resistance @ 6 cm2 cooling area 1)
Rth(JA)
-
33
40
K/W
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
55
-
-
ID = 130 μA
1.2
1.6
2
ID = 250 μA
-
1.65
-
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
V
VGS = 0 V, ID = 0.25 mA
VGS(th)
Gate threshold voltage, VGS = VDS
IDSS
Zero gate voltage drain current
μA
VDS = 50 V, VGS = 0 V, Tj = -40 °C
-
-
0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 50 V, VGS = 0 V, Tj = 150 °C
-
-
100
IGSS
Gate-source leakage current
nA
VGS = 20 V, VDS = 0 V, Tj = 25 °C
-
10
100
VGS = 20 V, VDS = 0 V, Tj = 150 °C
-
20
100
RDS(on)
Drain-Source on-state resistance
m
VGS = 4.5 V, ID = 19 A
-
16
18
VGS = 10 V, ID = 19 A
-
11.5
13
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Data Sheet
3
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Forward transconductance
gfs
25
-
-
S
VDS>2*ID *RDS(on)max , ID = 35 A
Input capacitance
Ciss
-
2130
2660
pF
Coss
-
600
750
Crss
-
320
400
td(on)
-
15
25
tr
-
70
105
td(off)
-
40
60
tf
-
25
40
Qg(th)
-
2.5
3.8
Qg(5)
-
50
75
Qg(total)
-
85
130
V(plateau)
-
4.5
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Gate Charge Characteristics
Gate charge at threshold
nC
VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, V GS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 47 A, V GS = 0 to 10 V
Gate plateau voltage
V
VDD = 40 V, ID = 47 A
Data Sheet
4
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Electrical Characteristics
Symbol
Parameter
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
IS
35
-
-
IFM
188
-
-
VSD
-
1.25
1.8
V
trr
-
110
165
ns
Qrr
-
0.23
0.35
μC
Reverse Diode
Inverse diode continuous forward current
A
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 94 A
Reverse recovery time
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Reverse recovery charge
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
VAK(on)
Forward voltage
V
IAK(on) = 5 mA, Tj = -40...+150 °C
-
1.3
1.4
IAK(on) = 1.5 mA, Tj = 150 °C
-
-
0.9
Sensor override
-
-
10
-
-
5
-
-
600
tP = 100 μs, Tj = -40...+150 °C
IAK(on)
Forward current
mA
Tj = -40...+150 °C
Sensor override
tP = 100 μs, Tj = -40...+150 °C
Data Sheet
5
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
-
-
4
μA
100
-
-
μs
-
-
150
Sensor Characteristics
IAK(off)
Temperature sensor leakage current
Tj = 150 °C
treset
Min. reset pulse duration 1)
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)
