BTS 282 Z
Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
1
1
Analog driving possible
7
VPT05167
7
VPT05754
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
1
Avalanche rated
7
High current pinning
Type
BTS 282 Z
VDS
49 V
RDS(on)
6.5 m
Package
Ordering Code
P-TO220-7-3
Q67060-S6004-A2
P-TO220-7-180
Q67060-S6005-A2
P-TO220-7-230
Q67060-S6007
D Pin 4 and TAB
G Pin 2
A Pin 3
Temperature
Sensor
K Pin 5
S Pin 1 + 6 + 7
Pin
Symbol
Function
1
S
Source
2
G
Gate
3
A
Anode Temperature Sensor
4
D
Drain
5
K
Cathode Temperature Sensor
6
S
Source
7
S
Source
1
2000-09-11
BTS 282 Z
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
49
Drain-gate voltage, RGS = 20 k
V
49
Gate source voltage
VGS
Nominal load current (ISO 10483)
ID(ISO)
VGS = 4.5 V, VDS 0.5 V, TC = 85 °C
VGS = 10 V, VDS
DGR
Value
Unit
V
20
A
36
0.5 V, TC = 85 °C
52
Continuous drain current 1)
ID
80
Pulsed drain current
ID puls
320
Avalanche energy, single pulse
EAS
2
J
Power dissipation
Ptot
300
W
-40 ...+175
°C
TC = 100 °C, VGS = 4.5V
ID = 36 A, RGS = 25
TC = 25 °C
Operating temperature 2)
Tj
Peak temperature ( single event )
Tjpeak
Storage temperature
Tstg
200
-55 ... +150
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
2
2000-09-11
BTS 282 Z
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
junction - case:
RthJC
-
-
0.5
Thermal resistance @ min. footprint
Rth(JA)
-
-
62
Thermal resistance @ 6 cm2 cooling area 1)
Rth(JA)
-
33
40
K/W
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
49
-
-
VGS(th)
1.2
1.6
2
at Tj = 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 240 µA
Zero gate voltage drain current
µA
IDSS
VDS = 45 V, VGS = 0 V, Tj = -40 °C
-
-
0.1
VDS = 45 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 45 V, VGS = 0 V, Tj = 150 °C
-
-
100
Gate-source leakage current
nA
IGSS
VGS = 20 V, VDS = 0 V, Tj = 25 °C
-
10
100
VGS = 20 V, VDS = 0 V, Tj = 150 °C
-
20
100
Drain-Source on-state resistance
m
RDS(on)
VGS = 4.5 V, ID = 36 A
-
8.2
9.5
VGS = 10 V, ID = 36 A
-
5.8
6.5
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
2000-09-11
BTS 282 Z
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
gfs
30
70
-
S
Ciss
-
3850
4800
pF
Coss
-
1090
1357
Crss
-
570
715
td(on)
-
30
45
tr
-
37
56
td(off)
-
70
105
tf
-
36
55
Qg(th)
-
3.8
5.7
Qg(5)
-
92
138
Qg(total)
-
155
232
V(plateau)
-
3.4
-
at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
VDS>2*ID *RDS(on)max , ID = 80 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
Gate Charge Characteristics
Gate charge at threshold
nC
VDD = 40 V, ID=≥0,1 A , V GS = 0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 80 A, V GS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 80 A, V GS = 0 to 10 V
Gate plateau voltage
V
VDD = 40 V, ID = 80 A
4
2000-09-11
BTS 282 Z
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
IS
80
-
-
IFM
320
-
-
VSD
-
1.25
1.6
V
trr
-
105
157
ns
Qrr
-
0.31
0.47
µC
at Tj = 25°C, unless otherwise specified
Reverse Diode
Inverse diode continuous forward current
A
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 95 A
Reverse recovery time
VR = 30 V, IF =IS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF =IS, diF/dt = 100 A/µs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
V
VAK(on)
IAK(on) = 5 mA, Tj = -40...+150 °C
-
1.3
1.4
IAK(on) = 1.5 mA, Tj = 150 °C
-
-
0.9
Sensor override
-
-
10
-
-
5
-
-
600
tP = 100 µs, Tj = -40...+150 °C
Forward current
IAK(on)
mA
Tj = -40...+150 °C
Sensor override
tP = 100 µs, Tj = -40...+150 °C
5
2000-09-11
BTS 282 Z
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
-
-
4
µA
100
-
-
µs
-
-
150
Sensor Characteristics
Temperature sensor leakage current
IAK(off)
Tj = 150 °C
Min. reset pulse duration 1)
treset
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)