BTS282ZE3180A

BTS 282 Z Speed TEMPFET 
N-Channel
Enhancement mode
Logic Level Input 1 1
Analog driving possible 7 VPT05167 7 VPT05754
Fast switching up to 1 MHz
Potential-free temperature sensor with thyristor characteristics
Overtemperature protection 1
Avalanche rated 7
High current pinning Type BTS 282 Z VDS 49 V RDS(on) 6.5 m
Package Ordering Code P-TO220-7-3 Q67060-S6004-A2 P-TO220-7-180 Q67060-S6005-A2 P-TO220-7-230 Q67060-S6007 D Pin 4 and TAB G Pin 2 A Pin 3 Temperature Sensor K Pin 5 S Pin 1 + 6 + 7 Pin Symbol Function 1 S Source 2 G Gate 3 A Anode Temperature Sensor 4 D Drain 5 K Cathode Temperature Sensor 6 S Source 7 S Source 1 2000-09-11 BTS 282 Z Maximum Ratings Parameter Symbol Drain source voltage VDS 49 Drain-gate voltage, RGS = 20 k
V 49 Gate source voltage VGS Nominal load current (ISO 10483) ID(ISO) VGS = 4.5 V, VDS 0.5 V, TC = 85 °C VGS = 10 V, VDS DGR Value Unit V 20 A 36 0.5 V, TC = 85 °C 52 Continuous drain current 1) ID 80 Pulsed drain current ID puls 320 Avalanche energy, single pulse EAS 2 J Power dissipation Ptot 300 W -40 ...+175 °C TC = 100 °C, VGS = 4.5V ID = 36 A, RGS = 25
TC = 25 °C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C 2 2000-09-11 BTS 282 Z Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.5 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DSS 49 - - VGS(th) 1.2 1.6 2 at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 240 µA Zero gate voltage drain current µA IDSS VDS = 45 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 45 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 45 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current nA IGSS VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100 Drain-Source on-state resistance m
RDS(on) VGS = 4.5 V, ID = 36 A - 8.2 9.5 VGS = 10 V, ID = 36 A - 5.8 6.5 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3 2000-09-11 BTS 282 Z Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 30 70 - S Ciss - 3850 4800 pF Coss - 1090 1357 Crss - 570 715 td(on) - 30 45 tr - 37 56 td(off) - 70 105 tf - 36 55 Qg(th) - 3.8 5.7 Qg(5) - 92 138 Qg(total) - 155 232 V(plateau) - 3.4 - at Tj = 25°C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3
Rise time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3
Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3
Fall time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3
Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID=≥0,1 A , V GS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 80 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 80 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 80 A 4 2000-09-11 BTS 282 Z Electrical Characteristics Symbol Parameter Values Unit min. typ. max. IS 80 - - IFM 320 - - VSD - 1.25 1.6 V trr - 105 157 ns Qrr - 0.31 0.47 µC at Tj = 25°C, unless otherwise specified Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 95 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/µs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Forward voltage V VAK(on) IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 µs, Tj = -40...+150 °C Forward current IAK(on) mA Tj = -40...+150 °C Sensor override tP = 100 µs, Tj = -40...+150 °C 5 2000-09-11 BTS 282 Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. - - 4 µA 100 - - µs - - 150 Sensor Characteristics Temperature sensor leakage current IAK(off) Tj = 150 °C Min. reset pulse duration 1) treset Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)