HITFET
Smart Low Side Power Switch
BTS3018TC
18 mOhm single channel smart low side power switch for 12V & 24V Application
Datasheet
Rev. 1.0, 2015-02-11
Automotive Power
HITFET - BTS3018TC
Smart low side power switch
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Assignment BTS3018TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.3
4.3.1
4.4
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range -- some values are links to other values in document . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient Thermal Impedance (Zth) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.1.1
5.2
5.2.1
5.2.2
5.3
Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
11
11
11
13
14
6
6.1
6.2
6.3
6.4
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
17
19
20
21
7
Package Outlines BTS3018TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Datasheet
2
7
7
8
8
9
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
1
BTS3018TC
Overview
Features
•
•
•
•
•
•
•
•
•
Short circuit and over load protection
Thermal shutdown with latchbehavior
ESD protection
Over voltage protection
Logic level input suitable for 5V and 3.3V
Analog driving possible
12V and 24V usability
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-3-2
Description
The BTS3018TC is a single channel low-side MOSFET power switch in PG-TO263-3-2 (D²PAK) package
providing embedded protective functions.
The device is monolithically integrated with a N channel vertical power FET and embedded protection functions.
The BTS3018TC is automotive qualified and can be used in 12V and 24V automotive and industrial applications.
Table 1
Product Summary
Output voltage1)
VOUT
Maximum Input Voltage
VIN
Maximum On-State resistance at 150°C at 5V input voltage
RDS(ON)
Typical On-State resistance at 25°C and 5V input voltage
RDS(ON)
Nominal load current
IL(NOM)
Minimum current limitation level at 85°C and 10V input voltage IL(LIM)_85
60 V
10 V
44 mΩ
18 mΩ
6.0 A
30.0 A
1) Active clamped
Protective Functions
•
•
•
•
•
Electrostatic discharge protection (ESD)
Active clamp over voltage protection
Thermal shutdown with latching behavior
Over load and Short circuit protection
Current limitation
Type
Package
Marking
BTS3018TC
PG-TO263-3-2
3018TC
Datasheet
3
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Overview
Analog Fault Information
•
•
•
Thermal shutdown
Short to Battery
Overload
Applications
•
•
•
•
Designed for inductive and lamp loads in automotive and industrial applications.
12V and 24V applications
All types of resistive, inductive and capacitive loads
Replaces discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3018TC offers ESD protection on the IN Pin which refers to the Source pin (Ground).
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal
shutdown the device sinks an increased input current at the IN pin to feedback the fault condition.
The BTS3018TC has a thermal-latch function. The device will turn off and stay off, even after the measured
temperature has dropped below the thermal hysteresis. After cooling down the device can be switched on again
by toggling the IN pin.
The over voltage protection gets activated during load dump or inductive turn off conditions. The power MOSFET
is limiting the drain-source voltage, if it rises above the VOUT(CLAMP).
Datasheet
4
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Block Diagram
2
Block Diagram
Drain
Overvoltage
Protection
Gate
Driving
Unit
IN
Overtemperature
Protection
Overcurrent
limitation
ESD
Protection
Source
BlockDiagram.emf
Figure 1
Block Diagram
2.1
Terms
Figure 2 shows all external terms used in this data sheet.
VBAT
VBAT
ZL
RIN
IL, ID
I IN
IN
Drain
VIN
Source
VOUT,
VDS
I Sourc e
GND
Terms.emf
Figure 2
Datasheet
Naming of electrical parameters
5
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment BTS3018TC
(top view )
4 (Tab)
Drain
2
1
Figure 3
Pin Configuration PG-TO263-3-2
3.2
Pin Definitions and Functions
Table 2
Pin definition and functions
Pin
Symbol
Function
1
IN
Input and fault feedback
2,4
Drain
Load connection for power DMOS
3
Source
Ground, Source of power DMOS
Datasheet
3
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
TJ = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Table 3
Pos.
Absolute maximum ratings
Parameter
Symbol Limit Values Unit
Min.
Test Conditions
Max.
Voltages
4.1.1
4.1.2
4.1.3
4.1.4
VOUT
–
60
Output voltage for short circuit protection VOUT(SC) –
36
Input Current
IIN
self limited
Output voltage
Load Current
V
2)
V
VIN = 5 V
-0.2 V < VIN < 10 V
VIN < -0.2 V
or VIN > 10 V
mA
VIN = 0 V, IL = 10 mA
-2
2
mA
–
30
A
3)
–
1.9
J
IL(0) = 7.0A
VBAT = 28 V;
TJ(0) = 150 °C
TJ
TSTG
-40
+150 °C
–
-55
+150 °C
–
VESD
-2
2
HBM4)
IL
Energies
4.1.5
Unclamped single pulse inductive energy EAS
single pulse
Temperatures
4.1.6
Operating temperature
4.1.7
Storage temperature
ESD Susceptibility
4.1.8
1)
2)
3)
4)
ESD Resistivity
kV
Not subject to production test, specified by design.
Active clamped.
Active limited
ESD susceptibility, “JEDEC HBM” according to ANSI/ESDA/JEDEC JS001
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation
Datasheet
7
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
General Product Characteristics
4.2
Functional Range
Table 4
Functional range
Pos.
Parameter
Symbol
4.2.1
Input pin voltage (device ON)
4.2.2
Output voltage
4.2.3
Input pin current consumption
4.2.4
Input pin feedback current
VIN
VOUT
IIN(NOR)
IIN(FAULT)
Limit Values
Unit
Conditions
Min.
Max.
2
10
V
–
2.5
36
V
–
–
30
µA
normal operation
–
1400
µA
fault indication
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
Table 5
Thermal resistance
Pos.
Parameter
Symbol
Limit Values
4.3.5
Junction to Case
4.3.6
Junction to Ambient (2s2p)
4.3.7
Junction to Ambient
(1s0p+600mm2 Cu)
RthJC
–
RthJA(2s2p) –
RthJA(1s0p) –
Min.
Unit
Conditions
Typ.
Max.
–
0.7
K/W
1) 2)
25
–
K/W
1) 3)
45
–
K/W
1) 4)
1) Not subject to production test, specified by design
2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
Ta = 25 °C. Device is loaded with 1W power.
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu). Ta = 25 °C, Device is loaded with 1W power.
4) Specified RthJA value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area
of 600mm2 and 70 μm thickness. Ta = 25 °C, Device is loaded with 1W power.
Datasheet
8
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
General Product Characteristics
4.3.1
Transient Thermal Impedance
100,00
(I)
(II)
(III)
(IV)
ZthJA [K/W]
10,00
1,00
(I) 1s0p-footprint
(II) 1s0p-300mm²
0,10
(III) 1s0p-600mm²
(IV) 2s2p
0,01
0,00001
Figure 4
0,0001
0,001
0,01
0,1
time [sec]
1
10
100
1000
Typical transient thermal impedance ZthJA = f(tp) , Ta = 25 °C
Value is according to Jedec JESD51-3,-5,-7 at natural convection on FR4 2s2p board;
4.4
Package
Table 6
.Package
Pos.
Parameter
Value
Test Conditions
4.4.1
Moisture Sensitivity Level JESD20-D1
MSL1
–
Datasheet
9
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
5
Input and Power Stage
5.1
Input Circuit
Figure 5 shows the input circuit of the BTS3018TC. The Zener Diode ZD protects the input circuit against ESD
pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the
Gate of the power MOSFET. During fault condition the device sinks the current IIN(FAULT) to give the fault
information back to the driving circuit. The current handling capability of the driving circuit does not influence the
device behavior as long as the supply current IIN is supplied.
I IS
I IN
Logic
IN
Gate
Fault
condition
ZD
I INf
Source
Figure 5
Input .emf
Input Circuit
Figure 6 shows the typical input threshold voltage of the BTS3018TC.
1,8
1,6
VVin(th)
[V]
[V]
IN(TH)
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-40
-10
10
35
55
75
95
115
135
150
Tj [°C]
Figure 6
Datasheet
Typical Input Threshold Voltage VIN(TH) = f(TJ); IL = 4.8mA , VOUT = 13.5V
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
Figure 7 shows the typical transfer characteristic of BTS3018TC
50
-40 °C
45
25 °C
40
150 °C
35
[A]
IILD [A]
30
25
20
15
10
5
0
1,5
2,5
3,5
4,5
5,5
6,5
7,5
8,5
9,5
VIN [V]
Figure 7
Typical Transfer Characteristic IL = f(VIN); VOUT = 13.5 V, TJ(0) = 25 °C
5.1.1
Failure Feedback
During failure condition the BTS3018TC sinks the increased current IIN(FAULT).
5.2
Power stage
5.2.1
Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following
Figures show this dependencies for the typical on-state resistance RDS(ON).
0,03
RRDS(ON)
[:]
DS(on) [:]
0,025
0,02
0,015
0,01
0,005
0
-40
-20
0
25
45
65
85
105
125
145
Tj [°C]
Figure 8
Datasheet
Typical On-State Resistance, RDS(ON) = f(TJ), VIN = 10 V
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
0,035
0,03
RRDS(ON)
[:]
DS(on) [:]
0,025
0,02
0,015
0,01
0,005
0
-40
-20
0
25
45
65
85
105
125
145
Tj [°C]
Figure 9
Datasheet
Typical On-State Resistance, RDS(ON) = f(TJ), VIN = 5 V
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
5.2.2
Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on.
Figure 10 shows the timing definition.
IN [V]
tON
tOFF
IL [A]
t
90 %
10 %
t
VOUT [V]
VBAT
70 %
50 %
t
-('V/'t)ON
Figure 10
Datasheet
('V/'t)OFF
Definition of Power Output Timing for Resistive Load
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
5.3
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
All voltages with respect to Ground Pin unless otherwise stated.
Table 7
Electrical Characteristics: Input and Power Stage
TJ = -40 °C to +150 °C, VBAT = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Input
μA
–
10
30
5.3.2 Input current protection mode
IIN(NOR)
IIN(FAULT)
–
600
1400 μA
5.3.3 Input threshold voltage
VIN(TH)
–
1.5
–
0.8
1.5
2
–
14
–
5.3.1 Input pin current consumption
V
VIN = 10 V
VIN = 10 V;
TJ = 150 °C
IL = 4.8 mA
TJ = 25 °C;
IL = 4.8 mA
TJ = -40 °C to +150 °C
Power Stage
5.3.4 On-State Resistance
RDS(ON)
mΩ
TJ = 25 °C;
VIN = 10 V;
IL = 6 A
–
25
36
mΩ
TJ = 150 °C;
VIN = 10 V;
IL = 6 A
–
18
–
mΩ
TJ = 25 °C;
VIN = 5 V;
IL = 6 A
–
30
44
mΩ
5.3.5 Nominal load current
IL(NOM)
5.5
6
–
A
5.3.6 Zero input voltage drain current
IDSS_85
–
3
10
μA
IDSS_150
–
10
32
μA
Datasheet
14
TJ = 150 °C;
VIN = 5 V;
IL
1)
=6A
TJ < 150 °C;
TA = 105 °C;
VIN = 5V;
VOUT = 0.5 V
VOUT = 36 V;
VIN = 0 V;
TJ = -40 °C to 85 °C
VOUT = 36 V;
VIN = 0 V;
TJ = 150 °C
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Input and Power Stage
Table 7
Electrical Characteristics: Input and Power Stage (cont’d)
TJ = -40 °C to +150 °C, VBAT = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Switching (see Figure 10 for definition details)
5.3.7 Turn-on time
5.3.8 Turn-off time
5.3.9 Slew rate on
5.3.10 Slew rate off
tON
tOFF
-(ΔV/Δt)ON
-(ΔV/Δt)OFF
–
40
100
–
20
–
–
60
160
–
80
–
–
0.7
2.0
1.2
–
0.9
1.5
0.9
–
-1.0
-1.5
–
μs
VBAT=13.5V, RL=2.2Ω,
VIN=5V
VBAT=13.5V, RL=2.2Ω,
VIN=10V
μs
VBAT=13.5V, RL=2.2Ω,
VIN=5V
VBAT=13.5V, RL=2.2Ω,
VIN=10V
V/μs VBAT=13.5V, RL=2.2Ω,
VIN=5V
VBAT=13.5V, RL=2.2Ω,
VIN=10V
V/μs VBAT=13.5V, RL=2.2Ω,
VIN=5V
VBAT=13.5V, RL=2.2Ω,
VIN=10V
Inverse Diode
5.3.11 Reverse diode forward voltage
-VDS
–
V
ID = -51A
VIN = 0 V
1) Not subject to production test, calculated by RthJA and RDS(ON).
Datasheet
15
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Protection Functions
6
Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operation.
6.1
Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this
a temperature sensor located in the Power MOSFET is used.
The BTS3018TC has a thermal-latch function. The device will turn off and stay off, even after the measured
temperature has dropped below the thermal hysteresis. After cooling down the device can be switched on again
by toggling the IN pin.
The protective switch off can be reset by setting the input pin voltage to low. Then the internal logic is not supplied
anymore and the next time the voltage on the IN pin rises above the input threshold voltage, the device will switch
on, if the temperature is not above the over temperature threshold.
see Figure 11.
Thermal shutdown
IN
High
Low
t
TJ
TJSD
ΔTJSD
t
IIN
IIN(FAULT)
I IN(NOR)
0
t
Thermal _fault _latch. emf
Figure 11
Datasheet
Error Signal via Input Current at Thermal Shutdown
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Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Protection Functions
6.2
Overvoltage Protection
When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery
potential, because the inductance intends to continue driving the current.
Drain
Source
OutputClamp .emf
Figure 12
Output Clamp
The BTS3018TC is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise
above VD(Clamp) . See Figure 12 and Figure 13 for more details.
Turn off due to
over temperature or short circuit
IN
t
IL
t
VOUT
VOUT(C LAMP)
V BAT
t
InductiveLoad . emf
Figure 13
Switching an Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS3018TC.
This energy can be calculated by the following equation:
V BAT – V L ( CLAMP ) ⎛
⎞
RL ⋅ IL
L
- ⋅ ln ⎜1 – -----------------------------------------------E = V L ( CLAMP ) ⋅ ------------------------------------------------ ⎟ + I L ⋅ -----RL
R
V
–
V
⎝
L
BAT
L ( CLAMP ) ⎠
Following equation simplifies under assumption of RL = 0
⎞
V BAT
2 ⎛
1
E = --- LI L ⋅ ⎜ 1 – ------------------------------------------------⎟
2
V
–
V
⎝
BAT
L ( CLAMP ) ⎠
Datasheet
17
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Protection Functions
Figure 14 shows the inductance / current combination the BTS3018TC can handle.
For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7
Energy
[J]
EAS [J]
10
1
0,1
1
10
100
[A]
IILD[A]
Figure 14
Maximum Energy capability for single pulse EAS=f (IL), Tj(0)= 150 °C, VBAT= 28V, VIN= 10V
6.3
Short Circuit Protection
The condition short circuit is an overload condition of the device. If the current reaches the limitation value of IL(LIM)
the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device
turns off.
The time from the beginning of current limitation until the over temperature switch off depends strongly on the
cooling conditions.
The device sinks higher current on IN pin during the protective switch off and switches back ON after the IN
toggles.
Figure 15 shows this behavior.
Datasheet
18
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Protection Functions
Occurrence of Over current
or high ohmic Short circuit
Turn off due to over temperature
IN is switched OFF
Restart from IN pin into normal operation
VIN
t
IL
VBAT /Zs c
IL(LIM )
t
TJ
TJ SD
t
IIN
IIN(FAULT)
IIN (NOR)
0
t
Short _circuit.emf
Figure 15
Short circuit protection via current limitation and over temperature switch off
6.4
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Table 8
Electrical Characteristics: Protection Functions
Unless otherwise specified: TJ = -40 °C to +150 °C , VBAT = 8.0 V to 36V
Pos. Parameter
Symbol
Limit Values
Unit
Test Conditions
Min.
Typ. Max.
150
1751) –
°C
–
VOUT(CLAMP) 60
65
75
V
VIN = 0 V; IL = 10mA
IL(LIM)_85
30
45
60
A
IL(LIM)_150
28
45
60
A
VIN = 10 V;
TJ = -40 °C to 85 °C
VIN = 10 V;
TJ = 150 °C;
Thermal Protection
6.4.1 Thermal shut down junction temperature TJ(SD)
Overvoltage Protection
6.4.2 Drain clamp voltage
Current limitation
6.4.3 Current limitation
1) Not subject to production test, specified by design.
Datasheet
19
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Package Outlines BTS3018TC
7
Package Outlines BTS3018TC
4.4
10 ±0.2
1.27 ±0.1
A
8.5 1)
B
0.05
4.7 ±0.5
2.7 ±0.3
2.4
0.1
1.3 ±0.3
7.55 1)
9.25 ±0.2
(15)
1 ±0.3
0...0.3
0...0.15
1.05
0.5 ±0.1
0.75 ±0.1
8˚ MAX.
2.54
5.08
0.25
M
A B
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
Figure 16
0.1 B
GPT09085
PG-TO263-3-2 (Plastic Dual Small Outline Package - D²PAK)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Datasheet
20
Dimensions in mm
Rev. 1.0, 2015-02-11
HITFET - BTS3018TC
Smart low side power switch
Revision History
8
Version
Rev. 1.0
Datasheet
Revision History
Date
2015-02-11
Changes
Released data sheet
21
Rev. 1.0, 2015-02-11
Edition 2015-02-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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