BTS3060TFATMA1

H I T F E T TM BTS3060TF Smart Low-Side Power Switch Single channel, 50 mΩ Datasheet Rev. 1.0, 2014-07-21 Automotive Power HITFET - BTS3060TF Smart Low-Side Power Switch Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 3.3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Assignment BTS3060TF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage and current definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 4.3 4.3.1 4.3.2 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.3.1 5.3.2 5.4 5.5 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistive Load Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Current capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 12 12 13 14 14 6 6.1 6.2 6.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection / Current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 15 16 7 7.1 7.2 Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8 8.1 8.2 8.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 18 19 20 9 9.1 9.2 9.3 Characterisation Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 21 26 28 10 10.1 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Application Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 11 Package Outlines BTS3060TF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Datasheet 2 6 6 6 6 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch 1 BTS3060TF Overview Application • • • Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits Most suitable for inductive loads as well as loads with inrush currents Basic Features • • • • • Single channel device Very low power DMOS leakage current in OFF state Electrostatic discharge protection (ESD) Green Product (RoHS compliant) AEC Qualified PG-TO252-3 Description The BTS3060TF is a 50 mΩ single channel Smart Low-Side Power Switch with in a TO252-3 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3060TF is automotive qualified and is optimized for 12V automotive applications. Table 1 Product Summary VOUT VBAT(LD) VIN RDS(ON) IL(NOM) IL(LIM) IL(OFF) Operating voltage range Maximum load voltage Maximum input voltage Maximum On-State resistance at TJ = 150°C, VIN = 5 V Nominal load current Minimum current limitation Maximum OFF state load current at TJ = 25°C 3.0 .. 35.0 V 42 V 5.5 V 135 mΩ 3A 10.5 A 2 µA Protection Functions • • • Latching over temperature protection Active clamp over voltage protection Current limitation Type Package Marking BTS3060TF TO252-3 3060TF Datasheet 3 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Overview Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum current capabilities. The BTS3060TF offers ESD protection on the IN Pin which refers to the Source pin (Ground). The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. The BTS3060TF has a latching thermal shut-down function. The device will turn off until the input is toggeled and device reset. The over voltage protection can be activated during load dump or inductive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the VOUT(CLAMP). Datasheet 4 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Block Diagram 2 Block Diagram OUT IN Gate Driving Unit ESD Protection Over Voltage Protection Overtemperature Protection Short circuit detection / Current Limitation GND BlockDiagram_3pin.emf Figure 1 Datasheet Block Diagram 5 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS3060TF (top view ) 4 (Tab) 2 1 Figure 2 Pin Configuration TO252-3 3.2 Pin Definitions and Functions Pin Symbol Function 1 IN Input pin 3 2,4 OUT Drain, Load connection for power DMOS 3 GND Ground, Source of power DMOS 3.3 Voltage and current definition Figure 3 shows all external terms used in this data sheet, with associated convention for positive values. VBAT V BAT ZL I IN I L , ID IN OUT VIN VOUT GND I GND GND Figure 3 Datasheet Terms_3pin.emf Naming definition of electrical parameters 6 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings 1) TJ = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Min. Note / Test Condition Max. Voltages 4.1.1 4.1.2 4.1.3 VOUT – Battery voltage for short circuit protection VBAT(SC) – Output voltage Battery voltage for load dump protection (VBAT(LD) = VA + VS with VA = 13.5V) VBAT(LD) – 42 V internally clamped 35 V l = 0 or 5m RSC = 20 mΩ + RCable RCable = l * 16 mΩ/m LSC = 5 µH + LCable LCable = l * 1 µH/m VIN = 5 V 42 V 2) Ri = 2 Ω RLoad = 4.5 Ω td = 400 ms suppressed pulse Input Pin VIN -0.3 5.5 V – | IL | – IL(LIM) A – 4.1.6 Unclamped single inductive energy single EAS pulse – 55 mJ 4.1.7 Unclamped repetitive inductive energy pulse with 10k cycles EAR(10k) – 40 mJ 4.1.8 Unclamped repetitive inductive energy pulse with 100k cycles EAR(100k) – 20 mJ IL(0) = 3 A VBAT = 13.5 V TJ(0) = 150 °C IL(0) = 3 A VBAT = 13.5 V TJ(0) = 85 °C IL(0) = 3 A VBAT = 13.5 V TJ(0) = 85 °C Tj Tstg -40 +150 °C – -55 +150 °C – 4.1.4 Input Voltage Power Stage 4.1.5 Load current Energies Temperatures 4.1.9 Operating temperature 4.1.10 Storage temperature ESD Susceptibility 4.1.11 ESD susceptibility (all pins) VESD -2 2 kV HBM3) 4.1.12 ESD susceptibility OUT-pin to GND VESD -4 4 kV HBM3) 4.1.13 ESD susceptibility VESD -750 750 V CDM4) 1) Not subject to production test, specified by design. Datasheet 7 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch General Product Characteristics 2) VBAT(LD) is setup without the DUT connected to the generator per ISO7637-1; Ri is the internal resistance of the load dump test pulse generator; td is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2. 3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ , 100 pF) 4) ESD susceptibility, Charged Device Model “CDM” ESDA STM5.3.1 or ANSI/ESD S.5.3.1 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Functional Range Table 3 Functional Range 1) Please refer to “Electrical Characteristics” on Page 18 for test conditions Pos. Parameter Symbol Limit Values Unit Min. Max. Note / Test Condition 4.2.1 Battery Voltage Range for Nominal Operation VBAT 8.0 18.0 V – 4.2.2 Extended battery Voltage Range for Operation VBAT 3.0 35.0 V parameter deviations possible 4.2.3 Input Voltage for Nominal Operation VIN(NOM) 4.0 5.5 V – 4.2.4 Extended Input Voltage Range for Operation VIN(EXT) 2.5 4.0 V over temperature latch available, parameter deviations possible 4.2.5 Junction Temperature TJ -40 150 °C – 1) Not subject to production test, specified by design Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. Datasheet 8 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch General Product Characteristics 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. Parameter Symbol Limit Values Min. 4.3.1 Junction to Case 4.3.2 Junction to Ambient (2s2p) 4.3.3 Junction to Ambient (1s0p+600mm2 Cu) RthJC – RthJA(2s2p) – RthJA(1s0p) – Unit Note / Test Condition Typ. Max. 2 2.7 K/W 1) 2) 25 – K/W 1) 3) 40 – K/W 1) 4) 1) Not subject to production test, specified by design 2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). Ta = 85 °C. Device is loaded with 1W power. 3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer. Ta = 85 °C, Device is loaded with 1W power. 4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600mm2 and 70 μm thickness. Ta = 85 °C, Device is loaded with 1W power. 4.3.1 PCB set up The following PCB set up was implemented to determine the transiet thermal impedance 1,5 mm 70μm modelled (traces) 35μm, 90% metalization* 70μm, 5% metalization Figure 4 Cross section JEDEC2s2p. 1,5 mm 70μm modeled (traces) 70μm, 5% metalization* Figure 5 Datasheet Cross section JEDEC1s0p. 9 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch General Product Characteristics JEDEC 1s0p 600mm² JEDEC 1s0p / Footprint JEDEC 2s2p Figure 6 Cross section JEDEC1s0p. 4.3.2 Transient Thermal Impedance Detail: solder area 30 Zth_JA [K/W] 20 10 0 0,00001 0,0001 0,001 0,01 0,1 1 10 100 1000 10000 Pulse [sec] Figure 7 Datasheet Typical transient thermal impedance ZthJA = f(tp) , Ta = 85°C Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipating 1 W power. 10 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch General Product Characteristics 120 110 100 footprint 90 300mm² 80 600mm² Zth_JA [K/W] 70 60 50 40 30 20 10 0 0,00001 0,0001 0,001 0,01 0,1 1 10 100 1000 10000 Pulse [sec] Figure 8 Datasheet Typical transient thermal impedance ZthJA = f(tp) , Ta = 85°C. PCB 1s0p -- cooling areas vs. RthJA. Device is dissipating 1 W power. 11 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Power Stage 5 Power Stage 5.1 Output On-state Resistance The on-state resistance depends on the junction temperature Tj and on the applied input voltage. Figure 9 show this dependencies in terms of temperature and voltage for the typical on-state resistance RDS(ON). The behavior in reverse polarity is described in“Reverse Current capability” on Page 14 120 RDS(ON) [m:] 100 80 60 40 20 -40 -20 0 20 40 60 80 100 120 140 160 Tj [⁰C] Figure 9 Typical On-State Resistance, RDS(ON) = f(Tj), VIN = 5 V 5.2 Resistive Load Output Timing Figure 10 shows the typical timing when switching a resisitive load . VIN 5V VIN (TH) t VOUT V BAT 90 % -(ΔV/Δt)ON ( ΔV/Δt)OFF 50 % 10 % tDON tF tDOFF tON tR tOFF Figure 10 Definition of Power Output Timing for Resistive Load 5.3 Inductive Load 5.3.1 Output Clamping t Switching.emf When switching off inductive loads with low side switches, the Drain-Source voltage VOUT rises above battery potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages the Datasheet 12 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Power Stage device has a voltage clamping mechanism to keep the voltage at VOUT(CLAMP). During this clamping operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum allowed load inductance is limited. See Figure 11 and Figure 12 for more details. VBAT ZL IL OUT ( DMOS Drain VOUT GND ( DMOS Source) IGND OutputClamp .emf Figure 11 Output Clamp Circuitry . VIN 5V IOUT t V OUT t VOUT( CLAMP) VBAT t InductiveLoad .emf Figure 12 Switching an Inductive Load 5.3.2 Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3060TF. This energy can be calculated by the following equation: Datasheet 13 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Power Stage V BAT – V OUT(CLAMP) ⎛ ⎞ RL ⋅ IL L - ⋅ ln ⎜1 – --------------------------------------------------E = V OUT(CLAMP) ⋅ --------------------------------------------------- ⎟ + I L ⋅ -----RL R V BAT – V OUT(CLAMP) ⎠ ⎝ L Following equation simplifies under assumption of RL = 0 ⎞ V BAT 2 ⎛ 1 E = --- LI L ⋅ ⎜ 1 – ---------------------------------------------------⎟ 2 V BAT – V OUT(CLAMP) ⎠ ⎝ Figure 13 shows the inductance / current combination the BTS3060TF can handle. For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7 1000 100 L [mH] 10 1 0,1 0,01 0,001 0,1 1 10 IL [A] Figure 13 Maximum load inductance for single pulse L=f (IL), Tj(0) = TJ, start = 150 °C, VBAT = 13.5 V 5.4 Reverse Current capability A reverse battery situation means the OUT pin is pulled below GND potential to -VBAT via the load ZL. In this situation the load is driven by a current through the intrinsic body diode of the BTS3060TF and all protection functions, like current limitation, over temperature shut down or over voltage clamping, are not available. The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS reverse body diode “-VOUT”. 5.5 Characteristics Please see “Power Stage” on Page 18 for electrical characteristic table. Datasheet 14 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Protection Functions 6 Protection Functions The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 6.1 Thermal Protection The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor is located in the power MOSFET. The device incorporates an absolute (TJ(SD)) and a dynamic temperature limitation ( ∆TJ(SW)). Triggering one of them will cause the output to switch off. The BTS3060TF has a latching thermal protection function. After the device has switched off due to over temperature the device will stay off even if the temperature drops down. A protective switch off will be reset by setting the input pin voltage to low for a time longer than tRESET. The next time the voltage on the IN pin rises above the input threshold voltage, the latch will be reset and the device will switch on, if the over temperature protection is no more present or triggered. Thermal shutdown IN IN goes high Reset IN 5V 0V t Tj Tj (SD) t RESET ΔTj(SD) t VOUT V BAT t Thermal _fault _latch. emf Figure 14 Thermal protective switch OFF scenario 6.2 Short Circuit Protection / Current limitation The condition short circuit is an overload condition to the device. If the load current reaches the limitation value of IL(LIM) the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device turns off. The time from the beginning of current limitation until the over temperature switch off depends strongly on the cooling conditions. Figure 15 shows this simplified behavior. Datasheet 15 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Protection Functions Occurrence of Over current or high ohmic Short circuit Turn off due to over temperature IN is switched OFF Restart from IN pin into normal operation IN 5V 0 ID , I L tRESET t VBAT /Zs c I L(LIM ) t Tj Tj(SD ) t Short _circuit_latch.emf Figure 15 Short circuit protection via current limitation and over temperature switch off 6.3 Characteristics Please see “Protection” on Page 19 for electrical characteristic table. Datasheet 16 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Input Stage 7 Input Stage 7.1 Input Circuit Figure 16 shows the input circuit of the BTS3060TF. It’s ensured that the device switches off in case of open input pin. A ESD Zener structure protects the input circuit against ESD pulses. ESD protection circuit IN GND Figure 16 Simplified Input circuitry 7.2 Characteristics Input circuit.emf Please see “Input Stage” on Page 20 for electrical characteristic table. Datasheet 17 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Electrical Characteristics 8 Electrical Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing and in typical application condition. All voltages and currents naming and polarity in accordance to Figure 3 “Naming definition of electrical parameters” on Page 6 8.1 Power Stage Please see Chapter “Power Stage” on Page 12 for parameter description and further details. Table 4 Electrical Characteristics: Power Stage TJ = -40 °C to +150 °C, VBAT = 8 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Note / Test Condition Min. Typ. Max. 8.1.1 On-State resistance at hot temperature RDS(ON)_150 – 105 135 mΩ 8.1.2 On-State resistance at ambient temperature RDS(ON)_25 – 50 – mΩ 8.1.3 Nominal load current IL(NOM) – 3 – A IL(OFF) – Power Stage 8.1.4 OFF state load current 8.1.5 Reverse body diode forward voltage drop -VOUT Datasheet 18 TJ = 150 °C; VIN = 5 V; IL = 3.0 A TJ = 25 °C; VIN = 5 V; IL = 3.0 A 1) TJ < 150 °C; TA = 85 °C VIN = 5 V; – 2 μA 2) VBAT = 13.5 V; VIN = 0 V; TJ ≤ 85 °C VBAT = 18 V; VIN = 0 V; TJ = 150 °C ID = -3.0 A; VIN = 0 V – – 4 μA – 0.8 1.5 V Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Electrical Characteristics Table 4 Electrical Characteristics: Power Stage (cont’d) TJ = -40 °C to +150 °C, VBAT = 8 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Note / Test Condition Min. Typ. Max. Dynamic characteristics - switching VBAT = 13.5 V, RL = 4.7 Ω; single pulse see Figure 10 “Definition of Power Output Timing for Resistive Load” on Page 12 for definition details 8.1.6 Turn-on time tON 12 38 76 μs 8.1.7 Turn-on delay time tDON 2 8 16 μs 8.1.8 Fall time, Falling output voltage tF 10 30 60 μs 8.1.9 Turn-off time tOFF 20 65 130 μs 8.1.10 Turn-off delay time tDOFF 10 35 70 μs 8.1.11 Rise time, Rising output voltage tR 10 30 60 μs 8.1.12 Rise time to fall time delta tR - tF – 0 – μs – 8.1.13 Rise time/Fall time factor tR / tF -(∆V/∆t) ON – 1 – – – – 0.85 – V/µs VOUT = 90% VBAT to VOUT = 50% VBAT (∆V/∆t) OFF – 0.85 – V/µs VOUT = 50% VBAT to VOUT = 90% VBAT 8.1.14 Turn-on Slew rate 3) 8.1.15 Turn-off Slew rate 3) VIN = 0V to 5V; VOUT = 10% VBAT VIN = 0 V to 5V; VOUT = 90% VBAT VIN = 0V to 5V; VOUT = 90% VBAT to VOUT = 10% VBAT VIN = 5 V to 0V; VOUT = 90% VBAT VIN = 5 V to 0V; VOUT = 10% VBAT VIN = 5V to 0V; VOUT = 10% VBAT to VOUT = 90% VBAT 1) Not subject to production test, calculated by RthJA and RDS(on). 2) Not subject to production test, specified by design 3) calculated value 8.2 Protection Please see Chapter “Protection Functions” on Page 15 for parameter description and further details. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation Datasheet 19 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Electrical Characteristics Table 5 Electrical Characteristics: Protection TJ = -40 °C to +150 °C, VBAT = 8 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Note / Test Condition °C 1) Min. Typ. Max. Tj(SD) 150 175 8.2.2 Dynamic temperature limitation/shutdown ΔTJ(SW) – 70 – K 1) 8.2.3 minimum latch reset time tRESET 50 – – µs 1) Thermal Protection 8.2.1 Thermal shut down junction temperature – , VIN > 2.7 V ; VIN < 0.8 V; DMOS is off, no over temperature, pulse times above to assure reset of latch Overvoltage Protection 8.2.4 Drain clamp voltage VOUT(CLAMP) 42 45 49 V VIN = 0 V; ID = 10 mA IL(LIM) 15 20 A VIN = 5 V; see also Figure 15 Current limitation 8.2.5 Current limitation 10.5 1) Not subject to production test, specified by design. 8.3 Input Stage Please see Chapter “Input Stage” on Page 17 for description and further details. Table 6 Electrical Characteristics: Input TJ = -40 °C to +150 °C, VBAT = 8 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Note / Test Condition Input 8.3.1 Input Current, normal operation IIN(NOM) – 310 400 µA 2.7 < VIN < 5.5 V; DC operation normal, no fault 8.3.1 Input Current, protection latched IIN(PROT) – 320 – µA 2.7 < VIN < 5.5 V; latched fault; 1) 8.3.2 Input Voltage on-threshold 0.8 VIN(TH) 1.9 2.5 V ID = 1 mA; Power DMOS active 1) Not subject to production test, specified by design. Datasheet 20 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 9 Characterisation Results Typical performance characteristics 9.1 Power Stage 225 200 175 RDS(ON) [m:] 150 125 100 150°C 75 25°C 50 -40°C 25 0 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VIN [V] Figure 17 TypicalRDS(ON) vs. VIN @ TJ=-40, 85, 150°C, IL=3A 120 VIN = 3V VIN = 4V VIN = 5V 100 VIN = 5.5V RDS(ON) [m:] VIN = 6V 80 60 40 20 -40 -20 0 20 40 60 80 100 120 140 160 Tj [⁰C] Figure 18 Datasheet Typical RDS(ON) vs. TJ @ VIN= 3V, 4V, 5V, 5.5V, 6V, IL=3A 21 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 1,8 Vbat = 18V 1,6 Vbat = 13.5V 1,4 Vbat = 8 IL(OFF) [uA] 1,2 1,0 0,8 0,6 0,4 0,2 0,0 -40 -20 0 20 40 60 80 100 120 140 Tj [⁰C] Figure 19 Typical IL(OFF) vs. Tj @ VBAT = 8V, 13.5V, 18V 20 18 16 150°C IL(OFF) [uA] 14 12 25°C 10 -40°C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 VOUT [V] Figure 20 Datasheet Typical IL(OFF) vs. VOUT (0..40V) @ Tj = -40, 25, 150°C, VIN=0V 22 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 10 8 150°C 25°C -40°C IL [A] 6 4 2 0 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 Vout [V] Figure 21 Typical -IL vs.-VOUT @ Tj=-40, 25, 150°C in absolute values. EAS [J] 1 0,1 0,01 1 10 IL [A] Figure 22 Datasheet Maximum EAS vs. IL @ VBAT = 13.5V, Tj=150°C 23 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results Dynamic charactersitics: 70 Tdoff, -40°C time [us] 60 50 Tdoff, 25°C 40 Tdoff, 150°C 30 Tdon, -40°C 20 Tdon, 25°C 10 Tdon, 150°C 0 0 5 10 15 20 25 30 35 40 VBAT [V] Figure 23 Typical delay on time, delay off time vs. VBAT @ VIN=5V, IL=3A, Tj=-40, 25, 150°C 70 Trise, -40°C time [us] 60 50 Trise, 25°C 40 Trise, 150°C 30 Tfall, -40°C 20 Tfall, 25°C 10 Tfall, 150°C 0 0 5 10 15 20 25 30 35 40 VBAT [V] Figure 24 Datasheet Typical rise time, fall time vs. VBAT @ VIN=5V, IL=3A, Tj=-40, 25, 150°C 24 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 3,0 slew rate ON, -40°C 2,5 slew rate ON, 25°C Slew rate [V/us] 2,0 slew rate ON, 150°C 1,5 1,0 slew rate OFF, -40°C 0,5 slew rate OFF, 25°C 0,0 slew rate OFF, 150°C 0 5 10 15 20 25 30 35 40 VBAT [V] Figure 25 Typical slew rate vs. VBAT @ VIN=5V, IL=3A, Tj=-40, 25, 150°C 45 Tdoff, -40°C 40 35 Tdoff, 25°C time [us] 30 25 Tdoff, 150°C 20 Tdon, -40°C 15 10 Tdon, 25°C 5 Tdon, 150°C 0 3,0 4,0 5,0 6,0 VIN [V] Figure 26 Datasheet Typical delay on time, delay off time vs. VIN @ VBAT=13.5, RL=4.5 Ohm, Tj=-40, 25, 150°C 25 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 120 Trise, -40°C 100 Trise, 25°C time [us] 80 Trise, 150°C 60 Tfall, -40°C 40 Tfall, 25°C 20 Tfall, 150°C 0 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VIN [V] Figure 27 Typical turn on time, turn off time vs. VIN @ VBAT=13.5, RL=4.5 Ohm, Tj=-40, 25, 150°C 9.2 Protection 60,00 VOUT(CLAMP) [V] 45,00 30,00 15,00 0,00 -40 -20 0 20 40 60 80 100 120 140 160 TJ [◦C] Figure 28 Datasheet Typical VOUT(CLAMP) vs. Tj 26 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 18 VIN = 6V 16 VIN = 5.5V 14 VIN = 5V VIN = 4V I(LIM) [A] 12 VIN = 3V 10 8 6 4 2 0 -40 -20 0 20 40 60 80 100 120 140 TJ [C] Figure 29 Typical IL(LIM) vs. Tj @ VIN= 3V, 4V, 5V, 5.5V, 6V 18 -40°C 16 25°C 150°C 14 I(LIM) [A] 12 10 8 6 4 2 0 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 VIN [V] Figure 30 Datasheet Typical IL(LIM) vs. VIN @ Tj = -40°C, 25°C, 150°C 27 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 9.3 Input Stage 2,6 IL = 3A 2,4 IL = 1mA 2,2 VIN(TH) [V] 2 1,8 1,6 1,4 1,2 1 -40 10 60 110 160 TJ [°C] Figure 31 Typical VIN(TH) vs. Tj @ IL = 3A, 1mA 400 150°C 350 25°C 300 -40°C IIN(NOM) [uA] 250 200 150 100 50 0 0 1 2 3 4 5 6 VIN [V] Figure 32 Datasheet Typical IIN(NOM) vs. VIN @ Tj = -40°C, 25°C, 150°C 28 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Characterisation Results 400 150°C 25°C 350 -40°C 300 IIN(PROT) [uA] 250 200 150 100 50 0 0 1 2 3 4 5 6 VIN [V] Figure 33 Datasheet Typical IIN(PROT) vs. VIN @ Tj = -40°C, 25°C, 150°C 29 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Application Information 10 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 10.1 Application Diagram An application example with the BTS3060TF is shown below. V BAT Voltage Regulator IN Load OUT Micro controller BTS3060 TF VDD OUT R IN IN I/O PWM GND GND application_DPAK3.emf Figure 34 Application example circuitry Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Datasheet 30 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Package Outlines BTS3060TF Package Outlines BTS3060TF 6.5 +0.15 -0.05 A 2.3 +0.05 -0.10 B (5) 0.15 MAX. per side 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 ±0.1 0.51 MIN. 11 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 PG-TO252-3 (Transistor Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 31 Dimensions in mm Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Revision History 12 Version Rev 1.0 Datasheet Revision History Date 2014-07-21 Changes Datasheet released 32 Rev. 1.0, 2014-07-21 HITFET - BTS3060TF Smart Low-Side Power Switch Revision History Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Datasheet 33 Rev. 1.0, 2014-07-21 Edition 2014-07-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.