HITFET
Smart Low Side Power Switch
HITFET - BTS3104SDR
104 mOhm single channel smart low side power switch for 12V & 24V Application
Datasheet
Rev. 1.0, 2009-12-06
Automotive Power
HITFET - BTS3104SDR
Smart low side power switch
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Assignment BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.3
4.3.1
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.1.1
5.2
5.2.1
5.2.2
5.3
Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
11
11
11
13
14
6
6.1
6.2
6.3
6.4
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
16
17
18
19
7
Package Outlines BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
7
7
7
8
9
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
1
BTS3104SDR
Overview
Features
•
•
•
•
•
•
•
•
•
Short circuit and over load protection
Thermal shutdown with restart behavior
ESD protection
Over voltage protection
Logic level input suitable for 5V and 3.3V
Analog driving possible
12V and 24V usability
Green Product (RoHS compliant)
AEC Qualified
PG-TO252-3-11
Description
The BTS3104SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing
embedded protective functions.
The device is monolithically integrated with a N channel vertical power FET and embedded protection functions.
The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications.
Table 1
Product Summary
Drain voltage1)
Maximum Input Voltage
Maximum On-State resistance at 150°C at 5V input voltage
Typical On-State resistance at 25°C and 10V input voltage
Nominal load current
Minimum current limitation level
VD
VIN
RDS(ON)
RDS(ON)
ID(nom)
ID(lim)
60 V
10 V
323 mΩ
104 mΩ
2.0 A
6A
1) Active clamped
Type
Package
BTS3104SDR
PG-TO252-3-11
Datasheet
Marking
3
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Overview
Protective Functions
•
•
•
•
•
Electrostatic discharge protection (ESD)
Active clamp over voltage protection
Thermal shutdown with restart behavior
Over load and Short circuit protection
Current limitation
Analog Fault Information
•
•
•
Thermal shutdown
Short to Battery
Overload
Applications
•
•
•
•
Designed for inductive and lamp loads in automotive and industrial applications.
12V and 24V applications
All types of resistive, inductive and capacitive loads
Replaces discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3104SDR offers ESD protection on the IN Pin which refers to the Source pin (Ground).
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal
shutdown the device sinks an increased input current at the IN pin to feedback the fault condition.
The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the
measured temperature has dropped below the thermal hysteresis.
The over voltage protection gets activated during load dump or inductive turn off conditions. The power MOSFET
is limiting the drain-source voltage, if it rises above the VDS(clamp).
Datasheet
4
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Block Diagram
2
Block Diagram
Drain
Overvoltage
Protection
Gate
Driving
Unit
IN
Overtemperature
Protection
Overcurrent
limitation
ESD
Protection
Source
BlockDiagram.emf
Figure 1
Block Diagram
2.1
Terms
Figure 2 shows all external terms used in this data sheet.
Vbat
Vbat
ZL
RIN
ID
I IN
IN
Drain
VIN
VD
Source
I Sourc e
GND
Terms.emf
Figure 2
Datasheet
Naming of electrical parameters
5
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment BTS3104SDR
(top view )
4 (Tab)
Drain
2
1
Figure 3
Pin Configuration PG-TO252-3-11
3.2
Pin Definitions and Functions
Pin
Symbol
Function
1
IN
Input and fault feedback
2,4
Drain
Load connection for power DMOS
3
Source
Ground, Source of power DMOS
Datasheet
3
6
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol Limit Values Unit
Test Conditions
Min.
Max.
–
60
V
2)
–
36
V
VIN = 5 V
Voltages
4.1.1
Drain voltage
4.1.2
Drain voltage for short circuit protection
VD
VD(SC)
VIN = 0 V, ID = 10 mA
RSC = 200mOhm
LSC = 5µH
4.1.3
4.1.4
IIN
Input Current
self limited
mA
-0.2 V < VIN < 10 V
-2
2
mA
VIN < -0.2 V
or VIN > 10 V
–
6
A
3)
–
50
mJ
ID(Start) = 4.5A
Vbat = 24 V;
TJ(start) = 150 °C
TJ
TSTG
-40
+150 °C
–
-55
+150 °C
–
VESD
-2
2
HBM4)
ID
Drain Current
Energies
4.1.5
Unclamped single pulse inductive energy EAS
single pulse
Temperatures
4.1.6
Operating temperature
4.1.7
Storage temperature
ESD Susceptibility
4.1.8
1)
2)
3)
4)
ESD Resistivity
kV
Not subject to production test, specified by design.
Active clamped.
Active limited
ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation
4.2
Functional Range
Pos.
Parameter
Symbol
4.2.1
Input pin voltage (device ON)
4.2.2
Drain voltage
VIN
VD
Datasheet
Limit Values
Unit
Conditions
Min.
Max.
2
10
V
–
2.5
36
V
–
7
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
Pos.
Parameter
4.2.3
Input pin current consumption
4.2.4
Input pin feedback current
Symbol
IIN(ON)
IIN(lim)
Limit Values
Unit
Conditions
Min.
Max.
–
30
µA
normal operation
–
300
µA
fault indication
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
Pos.
Parameter
Symbol
Limit Values
4.3.5
Junction to Case
4.3.6
Junction to Ambient (2s2p)
4.3.7
Junction to Ambient
(1s0p+600mm2 Cu)
RthJC
–
RthJA(2s2p) –
RthJA(1s0p) –
Min.
Unit
Conditions
Typ.
Max.
–
1.3
K/W
1) 2)
28
–
K/W
1) 3)
48
–
K/W
1) 4)
1) Not subject to production test, specified by design
2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
Ta = 25 °C. Device is loaded with 1W power.
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu). Ta = 25 °C, Device is loaded with 1W power.
4) Specified RthJA value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area
of 600mm2 and 70 μm thickness. Ta = 25 °C, Device is loaded with 1W power.
Datasheet
8
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
4.3.1
Transient Thermal Impedance
28
ZthJA [ K / W ]
24
20
16
12
8
4
0
0,00001
0,0001
0,001
0,01
0,1
1
tp [ s ]
Figure 4
10
100
1000
10000
Zth_3104.emf
Typical transient thermal impedance
ZthJA = f(tp) , Ta = 25 °C
Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipating 1 W power.
.
Datasheet
9
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
5
Input and Power Stage
5.1
Input Circuit
Figure 5 shows the input circuit of the BTS3104SDR. The Zener Diode ZD protects the input circuit against ESD
pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the
Gate of the power MOSFET. During fault condition the device sinks the current IIN(fault) to give the fault information
back to the driving circuit. The current handling capability of the driving circuit does not influence the device
behavior as long as the supply current IIN is supplied.
I IS
I IN
Logic
IN
Gate
Fault
condition
ZD
I INf
Source
Figure 5
Input .emf
Input Circuit
The following Figure shows the typical input threshold voltage of BTS3104SDR.
2,00
1,75
VIN(th) [ V ]
1,50
1,25
1,00
0,75
0,50
0,25
0,00
-50
-25
0
25
50
75
100
T [°C]
Figure 6
125
150
Vinth_3104.emf
Typical Input Threshold Voltage Vinth = f(TJ); ID = 1.2mA, VD = VIN
The following Figure shows the typical transfer characteristic of BTS3104SDR.
Datasheet
10
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
14
12
ID [ A ]
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
VIN [ V ]
9
10
transferChart_3104.emf
Figure 7
Typical Transfer Characteristic ID = f(VIN); VD = 13.5 V, TJ(start) = 25 °C
5.1.1
Failure Feedback
During failure condition the BTS3104SDR sinks the increased current IIN(fault).
5.2
Power stage
5.2.1
Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following
Figures show this dependencies for the typical on-state resistance RDS(on).
Temperature dependency of RDS(on) at 3 different input voltage conditions:
0,25
RDS(on) [ Ω ]
0,20
typ.
0,15
0,10
0,05
0,00
-50
-25
0
25
50
75
T [ °C ]
Figure 8
Datasheet
100
125
150
rdson_10V_3104.emf
Typical On-State Resistance, RDS(on) = f(TJ), VIN = 10 V
11
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
0,25
R DS(on) [ Ω ]
0,20
0,15
typ.
0,10
0,05
-50
-25
0
25
50
75
T [ °C ]
Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5V
Figure 9
100
125
150
rdson_5V_3104.emf
0,35
RDS(on) [ Ω ]
0,30
0,25
typ.
0,20
0,15
-50
-25
0
25
50
75
T [ °C ]
Figure 10
Datasheet
100
125
150
rdson_3V_3104.emf
Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3 V
12
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
5.2.2
Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on.
Figure 11 shows the timing definition.
IN [V]
ton
toff
10. 0
0
ID [ A]
Iload
90 %
t
10 %
V D [V]
t
V bb
70 %
50 %
t
dVds /dt on
Figure 11
Datasheet
dVds/ dtoff
Switching .emf
Definition of Power Output Timing for Resistive Load
13
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
5.3
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Input and Power Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Input
5.3.1 Supply current from Input Pin
IIN(nom)
–
10
30
μA
5.3.2 Input current protection mode
IIN(lim)
–
100
300
μA
5.3.3 Input threshold voltage
VIN(th)
0.8
1.6
2
V
RDS(on)
–
104
–
mΩ
VD = 0 V;
VIN = 10 V
VIN = 10 V;
TJ = 150 °C
VD = VIN;
ID = 1.2 mA
Power Stage
5.3.4 On-State Resistance
TJ = 25 °C;
VIN = 10 V;
ID = 3 A
–
208
270
mΩ
TJ = 150 °C;
VIN = 10 V;
ID = 3 A
–
121
–
mΩ
TJ = 25 °C;
VIN = 5 V;
–
235
323
mΩ
TJ = 150 °C;
VIN = 5 V;
ID = 3 A
–
–
220
325
–
450
=3A
mΩ
ID
1)
=3A
mΩ
ID
1)
ID
1)
=3A
5.3.5 Nominal load current
ID(nom)
2.0
2.5
–
A
5.3.6 Zero input voltage drain current
IDSS
–
2.5
6
μA
–
6
12
μA
Datasheet
14
TJ = 25 °C;
VIN = 3 V;
TJ = 150 °C;
VIN = 3 V;
TJ < 150 °C;
TA = 105 °C;
VIN = 10 V;
VDS = 0.5 V
VD = 36 V;
VIN = 0 V;
TJ = -40 °C to 85 °C
VD = 36 V;
VIN = 0 V;
TJ = 150 °C
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
Electrical Characteristics: Input and Power Stage (cont’d)
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Switching (see Figure 11 for definition details)
5.3.7 Turn-on time
5.3.8 Turn-off time
5.3.9 Slew rate on
5.3.10 Slew rate off
ton
0.7
1.5
0.7
1.5
Vbb=13.5V, RL=4.7 Ω
TJ = -40 °C to 85 °C
TJ = 150 °C
1)
μs
Vbb=28V, RL=10 Ω
μs
Vbb=13.5V, RL=4.7 Ω
TJ = -40 °C to 85 °C
TJ = 150 °C
1)
μs
Vbb=28V, RL=10 Ω
V/μs Vbb=13.5V, RL=4.7 Ω
1)
Vbb=28V, RL=10 Ω
V/μs Vbb=13.5V, RL=4.7 Ω
1)
Vbb=28V, RL=10 Ω
-1.0
-1.5
V
50
100
60
120
–
50
120
–
80
120
120
200
–
80
200
-dVds/dton –
0.7
1.5
0.7
1.5
toff
–
dVds/dtoff –
μs
Inverse Diode
5.3.11 Inverse Diode forward voltage
VD,inverted –
ID =-11 A
VIN = 0 V
1) Not subject to production test, calculated by RthJA and RDS(on).
Datasheet
15
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
6
Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operation.
6.1
Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this
a temperature sensor located in the Power MOSFET is used.
The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the
measured temperature has dropped below the thermal hysteresis.
The protective switch off can be reset by setting the input pin voltage to low. Then the internal logic is not supplied
anymore and the next time the voltage on the IN pin rises above the input threshold voltage, the device will switch
on, if the temperature is not above the over temperature threshold.
see Figure 12.
Thermal shutdown
restart
IN
5V
0
t
TJ
TJSD
ΔTJSD
t
IIN
IIN(lim)
IIN(nom)
0
t
Thermal_fault_autorestart .emf
Figure 12
Datasheet
Error Signal via Input Current at Thermal Shutdown
16
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
6.2
Overvoltage Protection
When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery
potential, because the inductance intends to continue driving the current.
Drain
Source
OutputClamp .emf
Figure 13
Output Clamp
The BTS3104SDR is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise
above VD(Clamp) . See Figure 13 and Figure 14 for more details.
Turn off due to
over temperature or short circuit
IN
5V
0
t
ID
t
VD
VClamp
Vbat
t
InductiveLoad .emf
Figure 14
Switching an Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS3104SDR.
This energy can be calculated by the following equation:
V bat – V D(Clamp) ⎛
RL ⋅ IL
⎞
L
- ⋅ ln ⎜1 – ---------------------------------------- ⎟ + I L ⋅ -----E = V D(Clamp) ⋅ ---------------------------------------RL
V
–
V
R
⎝
bat
L
D(Clamp) ⎠
Following equation simplifies under assumption of RL = 0
V bat
⎞
2 ⎛
1
-⎟
E = --- LI L ⋅ ⎜ 1 – ---------------------------------------2
V
–
V
⎝
bat
D(Clamp) ⎠
Figure 16 shows the inductance / current combination the BTS3104SDR can handle.
Datasheet
17
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7
100,00
Vbat = 24V
L [ mH ]
Max.
10,00
1,00
1
ID [ A ]
10
EAS_3104.emf
Figure 15
Maximum load inductance for single pulse
L=f (IL), Tj(start)= 150 °C, Vbat= 24V
6.3
Short Circuit Protection
The condition short circuit is an overload condition of the device. If the current reaches the limitation value of ID(lim)
the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device
turns off.
The time from the beginning of current limitation until the over temperature switch off depends strongly on the
cooling conditions.
The device sinks higher current on IN pin during the protective switch off and switches back ON after the
BTS3104SDR cools down below the temperature hysteresis .
Figure 16 shows this behavior.
Datasheet
18
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
Occurrence of Over current
or high ohmic Short circuit
Turn off due to over temperature
Restart after short circuit turn off
Restart into normal load condition
VIN
5V
0
t
ID
V bat/Zs c
I D(lim )
TJ
TJ SD
t
ΔTJ SD
t
IIN
I IN(lim )
IIN(nom)
0
t
Short _circuit.emf
Figure 16
Short circuit protection via current limitation and over temperature switch off
6.4
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Electrical Characteristics: Protection Functions
Unless otherwise specified: Tj = -40 °C to +150 °C , Vbat = 8.0 V to 36V
Pos. Parameter
Symbol
Limit Values
Unit
Test Conditions
Min.
Typ. Max.
150
1751) –
°C
–
–
10
–
K
1)
VD(Clamp) 60
–
75
V
VIN = 0 V; ID = 10 mA
ID(lim)
13
20
A
VIN = 10 V;
VD = 13.5V;
Thermal Protection
6.4.1 Thermal shut down junction temperature
6.4.2 Thermal hysteresis
TJSD
ΔTJSD
Overvoltage Protection
6.4.3 Drain clamp voltage
Current limitation
6.4.4 Current limitation
6
tmeasure = 200µs
1) Not subject to production test, specified by design.
Datasheet
19
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Package Outlines BTS3104SDR
Package Outlines BTS3104SDR
6.5 +0.15
-0.05
0.15 MAX.
per side
2.3 +0.05
-0.10
B
(5)
3x
0.75 ±0.1
0.5 +0.08
-0.04
2.28
4.57
0.5 +0.08
-0.04
0.9 +0.20
-0.01
0...0.15
0.8 ±0.15
(4.24) 1 ±0.1
9.98 ±0.5
6.22 -0.2
5.4
A
±0.1
0.51 MIN.
7
0.1 B
0.25
M
A B
All metal surfaces tin plated,
except area of cut.
GPT09277
Figure 17
PG-TO252-3-11 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Datasheet
20
Dimensions in mm
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Revision History
8
Version
Rev. 1.0
Datasheet
Revision History
Date
2009-12-06
Changes
initial released data sheet
21
Rev. 1.0, 2009-12-06
Edition 2009-12-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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