BTS3104SDR

HITFET Smart Low Side Power Switch HITFET - BTS3104SDR 104 mOhm single channel smart low side power switch for 12V & 24V Application Datasheet Rev. 1.0, 2009-12-06 Automotive Power HITFET - BTS3104SDR Smart low side power switch 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 4.1 4.2 4.3 4.3.1 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.1.1 5.2 5.2.1 5.2.2 5.3 Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 11 11 11 13 14 6 6.1 6.2 6.3 6.4 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16 17 18 19 7 Package Outlines BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 7 7 7 8 9 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch 1 BTS3104SDR Overview Features • • • • • • • • • Short circuit and over load protection Thermal shutdown with restart behavior ESD protection Over voltage protection Logic level input suitable for 5V and 3.3V Analog driving possible 12V and 24V usability Green Product (RoHS compliant) AEC Qualified PG-TO252-3-11 Description The BTS3104SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications. Table 1 Product Summary Drain voltage1) Maximum Input Voltage Maximum On-State resistance at 150°C at 5V input voltage Typical On-State resistance at 25°C and 10V input voltage Nominal load current Minimum current limitation level VD VIN RDS(ON) RDS(ON) ID(nom) ID(lim) 60 V 10 V 323 mΩ 104 mΩ 2.0 A 6A 1) Active clamped Type Package BTS3104SDR PG-TO252-3-11 Datasheet Marking 3 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Overview Protective Functions • • • • • Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with restart behavior Over load and Short circuit protection Current limitation Analog Fault Information • • • Thermal shutdown Short to Battery Overload Applications • • • • Designed for inductive and lamp loads in automotive and industrial applications. 12V and 24V applications All types of resistive, inductive and capacitive loads Replaces discrete circuits Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum current capabilities. The BTS3104SDR offers ESD protection on the IN Pin which refers to the Source pin (Ground). The overtemperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal shutdown the device sinks an increased input current at the IN pin to feedback the fault condition. The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The over voltage protection gets activated during load dump or inductive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the VDS(clamp). Datasheet 4 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Block Diagram 2 Block Diagram Drain Overvoltage Protection Gate Driving Unit IN Overtemperature Protection Overcurrent limitation ESD Protection Source BlockDiagram.emf Figure 1 Block Diagram 2.1 Terms Figure 2 shows all external terms used in this data sheet. Vbat Vbat ZL RIN ID I IN IN Drain VIN VD Source I Sourc e GND Terms.emf Figure 2 Datasheet Naming of electrical parameters 5 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS3104SDR (top view ) 4 (Tab) Drain 2 1 Figure 3 Pin Configuration PG-TO252-3-11 3.2 Pin Definitions and Functions Pin Symbol Function 1 IN Input and fault feedback 2,4 Drain Load connection for power DMOS 3 Source Ground, Source of power DMOS Datasheet 3 6 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Max. – 60 V 2) – 36 V VIN = 5 V Voltages 4.1.1 Drain voltage 4.1.2 Drain voltage for short circuit protection VD VD(SC) VIN = 0 V, ID = 10 mA RSC = 200mOhm LSC = 5µH 4.1.3 4.1.4 IIN Input Current self limited mA -0.2 V < VIN < 10 V -2 2 mA VIN < -0.2 V or VIN > 10 V – 6 A 3) – 50 mJ ID(Start) = 4.5A Vbat = 24 V; TJ(start) = 150 °C TJ TSTG -40 +150 °C – -55 +150 °C – VESD -2 2 HBM4) ID Drain Current Energies 4.1.5 Unclamped single pulse inductive energy EAS single pulse Temperatures 4.1.6 Operating temperature 4.1.7 Storage temperature ESD Susceptibility 4.1.8 1) 2) 3) 4) ESD Resistivity kV Not subject to production test, specified by design. Active clamped. Active limited ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation 4.2 Functional Range Pos. Parameter Symbol 4.2.1 Input pin voltage (device ON) 4.2.2 Drain voltage VIN VD Datasheet Limit Values Unit Conditions Min. Max. 2 10 V – 2.5 36 V – 7 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch General Product Characteristics Pos. Parameter 4.2.3 Input pin current consumption 4.2.4 Input pin feedback current Symbol IIN(ON) IIN(lim) Limit Values Unit Conditions Min. Max. – 30 µA normal operation – 300 µA fault indication Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. Parameter Symbol Limit Values 4.3.5 Junction to Case 4.3.6 Junction to Ambient (2s2p) 4.3.7 Junction to Ambient (1s0p+600mm2 Cu) RthJC – RthJA(2s2p) – RthJA(1s0p) – Min. Unit Conditions Typ. Max. – 1.3 K/W 1) 2) 28 – K/W 1) 3) 48 – K/W 1) 4) 1) Not subject to production test, specified by design 2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). Ta = 25 °C. Device is loaded with 1W power. 3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Ta = 25 °C, Device is loaded with 1W power. 4) Specified RthJA value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600mm2 and 70 μm thickness. Ta = 25 °C, Device is loaded with 1W power. Datasheet 8 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch General Product Characteristics 4.3.1 Transient Thermal Impedance 28 ZthJA [ K / W ] 24 20 16 12 8 4 0 0,00001 0,0001 0,001 0,01 0,1 1 tp [ s ] Figure 4 10 100 1000 10000 Zth_3104.emf Typical transient thermal impedance ZthJA = f(tp) , Ta = 25 °C Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipating 1 W power. . Datasheet 9 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 5 Input and Power Stage 5.1 Input Circuit Figure 5 shows the input circuit of the BTS3104SDR. The Zener Diode ZD protects the input circuit against ESD pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the Gate of the power MOSFET. During fault condition the device sinks the current IIN(fault) to give the fault information back to the driving circuit. The current handling capability of the driving circuit does not influence the device behavior as long as the supply current IIN is supplied. I IS I IN Logic IN Gate Fault condition ZD I INf Source Figure 5 Input .emf Input Circuit The following Figure shows the typical input threshold voltage of BTS3104SDR. 2,00 1,75 VIN(th) [ V ] 1,50 1,25 1,00 0,75 0,50 0,25 0,00 -50 -25 0 25 50 75 100 T [°C] Figure 6 125 150 Vinth_3104.emf Typical Input Threshold Voltage Vinth = f(TJ); ID = 1.2mA, VD = VIN The following Figure shows the typical transfer characteristic of BTS3104SDR. Datasheet 10 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 14 12 ID [ A ] 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 VIN [ V ] 9 10 transferChart_3104.emf Figure 7 Typical Transfer Characteristic ID = f(VIN); VD = 13.5 V, TJ(start) = 25 °C 5.1.1 Failure Feedback During failure condition the BTS3104SDR sinks the increased current IIN(fault). 5.2 Power stage 5.2.1 Output On-state Resistance The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following Figures show this dependencies for the typical on-state resistance RDS(on). Temperature dependency of RDS(on) at 3 different input voltage conditions: 0,25 RDS(on) [ Ω ] 0,20 typ. 0,15 0,10 0,05 0,00 -50 -25 0 25 50 75 T [ °C ] Figure 8 Datasheet 100 125 150 rdson_10V_3104.emf Typical On-State Resistance, RDS(on) = f(TJ), VIN = 10 V 11 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 0,25 R DS(on) [ Ω ] 0,20 0,15 typ. 0,10 0,05 -50 -25 0 25 50 75 T [ °C ] Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5V Figure 9 100 125 150 rdson_5V_3104.emf 0,35 RDS(on) [ Ω ] 0,30 0,25 typ. 0,20 0,15 -50 -25 0 25 50 75 T [ °C ] Figure 10 Datasheet 100 125 150 rdson_3V_3104.emf Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3 V 12 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 5.2.2 Output Timing A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on. Figure 11 shows the timing definition. IN [V] ton toff 10. 0 0 ID [ A] Iload 90 % t 10 % V D [V] t V bb 70 % 50 % t dVds /dt on Figure 11 Datasheet dVds/ dtoff Switching .emf Definition of Power Output Timing for Resistive Load 13 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 5.3 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated. Electrical Characteristics: Input and Power Stage Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Input 5.3.1 Supply current from Input Pin IIN(nom) – 10 30 μA 5.3.2 Input current protection mode IIN(lim) – 100 300 μA 5.3.3 Input threshold voltage VIN(th) 0.8 1.6 2 V RDS(on) – 104 – mΩ VD = 0 V; VIN = 10 V VIN = 10 V; TJ = 150 °C VD = VIN; ID = 1.2 mA Power Stage 5.3.4 On-State Resistance TJ = 25 °C; VIN = 10 V; ID = 3 A – 208 270 mΩ TJ = 150 °C; VIN = 10 V; ID = 3 A – 121 – mΩ TJ = 25 °C; VIN = 5 V; – 235 323 mΩ TJ = 150 °C; VIN = 5 V; ID = 3 A – – 220 325 – 450 =3A mΩ ID 1) =3A mΩ ID 1) ID 1) =3A 5.3.5 Nominal load current ID(nom) 2.0 2.5 – A 5.3.6 Zero input voltage drain current IDSS – 2.5 6 μA – 6 12 μA Datasheet 14 TJ = 25 °C; VIN = 3 V; TJ = 150 °C; VIN = 3 V; TJ < 150 °C; TA = 105 °C; VIN = 10 V; VDS = 0.5 V VD = 36 V; VIN = 0 V; TJ = -40 °C to 85 °C VD = 36 V; VIN = 0 V; TJ = 150 °C Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Input and Power Stage Electrical Characteristics: Input and Power Stage (cont’d) Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Switching (see Figure 11 for definition details) 5.3.7 Turn-on time 5.3.8 Turn-off time 5.3.9 Slew rate on 5.3.10 Slew rate off ton 0.7 1.5 0.7 1.5 Vbb=13.5V, RL=4.7 Ω TJ = -40 °C to 85 °C TJ = 150 °C 1) μs Vbb=28V, RL=10 Ω μs Vbb=13.5V, RL=4.7 Ω TJ = -40 °C to 85 °C TJ = 150 °C 1) μs Vbb=28V, RL=10 Ω V/μs Vbb=13.5V, RL=4.7 Ω 1) Vbb=28V, RL=10 Ω V/μs Vbb=13.5V, RL=4.7 Ω 1) Vbb=28V, RL=10 Ω -1.0 -1.5 V 50 100 60 120 – 50 120 – 80 120 120 200 – 80 200 -dVds/dton – 0.7 1.5 0.7 1.5 toff – dVds/dtoff – μs Inverse Diode 5.3.11 Inverse Diode forward voltage VD,inverted – ID =-11 A VIN = 0 V 1) Not subject to production test, calculated by RthJA and RDS(on). Datasheet 15 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Protection Functions 6 Protection Functions The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 6.1 Thermal Protection The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor located in the Power MOSFET is used. The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The protective switch off can be reset by setting the input pin voltage to low. Then the internal logic is not supplied anymore and the next time the voltage on the IN pin rises above the input threshold voltage, the device will switch on, if the temperature is not above the over temperature threshold. see Figure 12. Thermal shutdown restart IN 5V 0 t TJ TJSD ΔTJSD t IIN IIN(lim) IIN(nom) 0 t Thermal_fault_autorestart .emf Figure 12 Datasheet Error Signal via Input Current at Thermal Shutdown 16 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Protection Functions 6.2 Overvoltage Protection When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. Drain Source OutputClamp .emf Figure 13 Output Clamp The BTS3104SDR is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise above VD(Clamp) . See Figure 13 and Figure 14 for more details. Turn off due to over temperature or short circuit IN 5V 0 t ID t VD VClamp Vbat t InductiveLoad .emf Figure 14 Switching an Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3104SDR. This energy can be calculated by the following equation: V bat – V D(Clamp) ⎛ RL ⋅ IL ⎞ L - ⋅ ln ⎜1 – ---------------------------------------- ⎟ + I L ⋅ -----E = V D(Clamp) ⋅ ---------------------------------------RL V – V R ⎝ bat L D(Clamp) ⎠ Following equation simplifies under assumption of RL = 0 V bat ⎞ 2 ⎛ 1 -⎟ E = --- LI L ⋅ ⎜ 1 – ---------------------------------------2 V – V ⎝ bat D(Clamp) ⎠ Figure 16 shows the inductance / current combination the BTS3104SDR can handle. Datasheet 17 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Protection Functions For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7 100,00 Vbat = 24V L [ mH ] Max. 10,00 1,00 1 ID [ A ] 10 EAS_3104.emf Figure 15 Maximum load inductance for single pulse L=f (IL), Tj(start)= 150 °C, Vbat= 24V 6.3 Short Circuit Protection The condition short circuit is an overload condition of the device. If the current reaches the limitation value of ID(lim) the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device turns off. The time from the beginning of current limitation until the over temperature switch off depends strongly on the cooling conditions. The device sinks higher current on IN pin during the protective switch off and switches back ON after the BTS3104SDR cools down below the temperature hysteresis . Figure 16 shows this behavior. Datasheet 18 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Protection Functions Occurrence of Over current or high ohmic Short circuit Turn off due to over temperature Restart after short circuit turn off Restart into normal load condition VIN 5V 0 t ID V bat/Zs c I D(lim ) TJ TJ SD t ΔTJ SD t IIN I IN(lim ) IIN(nom) 0 t Short _circuit.emf Figure 16 Short circuit protection via current limitation and over temperature switch off 6.4 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions Unless otherwise specified: Tj = -40 °C to +150 °C , Vbat = 8.0 V to 36V Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. 150 1751) – °C – – 10 – K 1) VD(Clamp) 60 – 75 V VIN = 0 V; ID = 10 mA ID(lim) 13 20 A VIN = 10 V; VD = 13.5V; Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis TJSD ΔTJSD Overvoltage Protection 6.4.3 Drain clamp voltage Current limitation 6.4.4 Current limitation 6 tmeasure = 200µs 1) Not subject to production test, specified by design. Datasheet 19 Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Package Outlines BTS3104SDR Package Outlines BTS3104SDR 6.5 +0.15 -0.05 0.15 MAX. per side 2.3 +0.05 -0.10 B (5) 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 A ±0.1 0.51 MIN. 7 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 Figure 17 PG-TO252-3-11 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 20 Dimensions in mm Rev. 1.0, 2009-12-06 HITFET - BTS3104SDR Smart low side power switch Revision History 8 Version Rev. 1.0 Datasheet Revision History Date 2009-12-06 Changes initial released data sheet 21 Rev. 1.0, 2009-12-06 Edition 2009-12-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.