BTS3118D

Smart Low Side Power Switch Power HITFET BTS 3118D Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 100 m
· Thermal shutdown Nominal load current I D(Nom) 2.4 A • Green product (RoHS compliant) Clamping energy EAS 2 J 42 V · Overload protection · Short circuit protection · Overvoltage protection · Current limitation P / PG-TO252-3-11 · Analog driving possible Application  All kinds of resistive, inductive and capacitive loads in switching or linear applications  μC compatible power switch for 12 V DC applications  Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Datasheet 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Maximum Ratings at T j = 25 °C, unless otherwise specified 1) Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 20 Unit V T j = -40 ... +150 °C IIN Continuous input current mA -0.2V  VIN  10V no limit VIN < -0.2V or VIN > 10V Operating temperature | IIN |  2 Tj -40 ... +150 Storage temperature Tstg -55 ... +150 Power dissipation 4) Ptot W T C = 85 °C 21 6cm 2 1.1 cooling area , T A = 85 °C °C Unclamped single pulse inductive energy 1) EAS 2 J Load dump protection VLoadDump2) = V A + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2
, VLD 58 V 2 kV 3 K/W R L = 6
, VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF) Thermal resistance junction - case: RthJC SMD: junction - ambient RthJA @ min. footprint @6 cm2 cooling area 115 3) 55 1 Not subject to production test, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. 4 Not subject to production test, calculated by R and maximum allowed junction temperature /R thJA thJC Datasheet 2 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Electrical Characteristics Parameter Symbol at Tj = 25 °C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 μA Characteristics VDS(AZ) Drain source clamp voltage Tj = -40 ... +150 °C, ID = 10 mA Off-state drain current Tj = -40 ... +150 °C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 0.6 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.6 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) m
VIN = 5 V, ID = 2.2 A, Tj = 25 °C VIN = 5 V, ID = 2.2 A, Tj = 150 °C - 90 120 - 160 240 VIN = 10 V, ID = 2.2 A, Tj = 25 °C - 70 100 VIN = 10 V, ID = 2.2 A, Tj = 150 °C - 130 200 RDS(on) On-state resistance ID(Nom) Nominal load current 1) Tj < 150 °C, VIN = 10 V, TA = 85 °C, SMD Nominal load current 1) μA 2) ID(ISO) A 2.4 - - 3.5 - - 10 15 20 VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150 °C Current limit (active if VDS > 2.5 V) 3) ID(lim) VIN = 10 V, VDS = 12 V, tm = 200 μs 1 Not subject to production test, calculated by R and RDS(on) /R thJA thJC 2 @ 6 cm2 cooling area 3 Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 μs. Datasheet 3 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Electrical Characteristics Parameter Symbol at Tj = 25 °C, unless otherwise specified Values Unit min. typ. max. t on - 40 100 t off - 70 100 -dV DS/dt on - 0.4 1.5 dV DS/dt off - 0.6 1.5 Dynamic Characteristics VIN to 90% I D: R L = 4.7
, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Turn-on time R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: R L = 4.7
, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: Slew rate on R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V μs V/μs Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Input current protection mode IIN(Prot) 60 120 300 μA Input current protection mode IIN(Prot) - 100 300 EAS 2 - - J VSD - 1.0 - V Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 2.2 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 10.9 A, tm = 250 μs, VIN = 0 V, tP = 300 μs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet 4 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Block diagram Inductive and overvoltage output clamp Terms RL V D Z 2 I IN 1 D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Datasheet 5 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. Ptot = f(TA) @ R thJA=55 K/W R ON = f(Tj); I D=2.2A; V IN=10V 3 225 m
max. W Rthjc = 3 K/W RDS(on) 175 Ptot 2 SMD @ 6cm2 150 typ. 125 1.5 100 1 75 50 0.5 25 0 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TA;TC 3 On-state resistance 4 Typ. input threshold voltage R ON = f(Tj); ID =2.2A; VIN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 2 m
max. V 200 1.6 VGS(th) RDS(on) 175 Tj 175 typ. 150 1.4 1.2 125 1 100 0.8 75 0.6 50 0.4 25 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Datasheet -25 0 25 50 75 100 °C 150 Tj Tj 6 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D 5 Typ. transfer characteristics 6 Typ. short circuit current ID =f(VIN ); VDS=12V; TJstart=25 °C I D(lim) = f(Tj); VDS=12V Parameter: V IN 16 24 A A 12 10 ID ID 20 18 8 16 6 14 Vin=10V 12 5V 4 2 0 1 2 3 4 5 6 7 V 8 10 -50 10 -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID =f(VDS ); TJstart =25 °C IDSS = f(Tj ) Parameter: V IN 20 11 Vin=10V A μA 7V ID 14 6V 9 5V 8 I DSS 16 4V 12 max. 7 6 10 5 8 4 6 3V 3 4 2 2 0 0 1 1 2 3 4 V 0 -50 6 VDS Datasheet typ. -25 0 25 50 75 100 125 °C 175 Tj 7 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 25 2 K/W A -40°C 10 D=0.5 1 0.2 ZthJA I D(lim) 0.1 25°C 15 10 0 0.05 0.02 0.01 85°C 10 10 -1 10 -2 +150°C 5 Single pulse 0 0 0.5 1 1.5 2 2.5 3 3.5 4 ms t 10 5 -3 -8 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 10 10 2 s 10 4 tp 11 Determination of ID(lim) ID(lim) = f(t); tm = 200μs Parameter: TJstart 25 I D(lim) A -40°C 15 25°C 85°C 10 150°C 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Package Outlines Package Outlines 6.5 +0.15 -0.05 A 0.15 MAX. per side 2.3 +0.05 -0.10 0.5 +0.08 -0.04 B (5) 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 ±0.1 0.51 MIN. 1 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Revision History 2 Revision History Version Rev. 1.4 Date Changes 2013-03-07 page 2: - added footnote “Not subject to production test, specified by design” for chapter/table Maximum Ratings - added footnote “Not subject to prod. test, calculated ...” for parameter Ptot - updated ESD HBM standard in chapter “Maximum Ratings” page 3: - updated test condition ID for parameter input threshold voltage VIN(th) - added footnote “Not subject to production test, calculated...” to the parameter Nominal load current ID(nom), ID(ISO) Rev. 1.3 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet 10 Rev. 1.4, 2013-03-07 Edition 2013-03-07 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2013. 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