BTS3142DATMA1

Smart Low Side Power Switch Power HITFET BTS 3142D Features Product Summary · Logic Level Input Drain source voltage VDS 42 V · Input Protection (ESD) On-state resistance R DS(on) 28 mΩ · Thermal shutdown Nominal load current ID(Nom) 4.6 A • Green product (RoHS compliant) Clamping energy EAS 3.5 J · Overload protection · Short circuit protection · Overvoltage protection · Current limitation P / PG-TO252-3-11 · Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • μC compatible power switch for 12 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions. Vbb M HITFET ® Drain Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Datasheet 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Maximum Ratings at T j = 25 °C, unless otherwise specified 1) Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 28 Unit V Tj = -40 ... +150 °C IIN Continuous input current mA -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj -40 ... +150 Storage temperature Tstg -55 ... +150 Power dissipation 4) Ptot TC = 85 °C 6cm2 °C W 59 cooling area , TA = 85 °C 1.1 Unclamped single pulse inductive energy 1) EAS 3.5 J Load dump protection VLoadDump2) = VA + VS VLD 67.5 V VESD 2 kV junction - case: R thJC 1.1 SMD: junction - ambient R thJA VIN = 0 and 10 V, td = 400 ms, R I = 2 Ω, R L = 3 Ω, VA = 13.5 V Electrostatic discharge voltage (Human Body Model) according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF) Thermal resistance @ min. footprint 115 @ 6 cm2 cooling area 3) 55 K/W 1 Not subject to production test, specified by design. 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. 4 Not subject to production test, calculated by R /R and maximum allowed junction temperature thJA Datasheet thJC 2 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Electrical Characteristics Parameter Symbol at Tj = 25 °C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 20 μA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ... +150 °C, I D = 10 mA Off-state drain current Tj = -40 ... +150 °C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 2.4 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 2.4 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance R DS(on) μA mΩ VIN = 5 V, ID = 4.6 A, T j = 25 °C - 27 34 VIN = 5 V, ID = 4.6 A, T j = 150 °C - 54 68 VIN = 10 V, I D = 4.6 A, Tj = 25 °C - 23 28 VIN = 10 V, I D = 4.6 A, Tj = 150 °C - 46 56 R DS(on) On-state resistance Nominal load current 1) ID(Nom) Tj < 150 °C, VIN = 10 V, TA = 85 °C, SMD 2) Nominal load current 1) A 4.6 - - ID(ISO) 12.6 - - ID(lim) 30 45 55 VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C Current limit (active if VDS > 2.5 V) 3) VIN = 10 V, VDS = 12 V, tm = 200 μs 1 Not subject to production test, calculated by R thJA/RthJC and RDS(on) 2 @ 6 cm2 cooling area 3 Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 μs. Datasheet 3 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Values Unit min. typ. max. ton - 60 120 toff - 60 120 -dV DS/dton - 0.3 1.5 dV DS/dtoff - 0.3 1.5 150 175 - °C μA Dynamic Characteristics Turn-on time VIN to 90% I D: μs R L = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% I D: R L = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: V/μs R L = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: R L = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature T jt Input current protection mode IIN(Prot) - 220 400 Input current protection mode IIN(Prot) - 180 400 EAS 3.5 - - J VSD - 1.0 - V Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 4.6 A, T j = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 51 A, t m = 250 μs, V IN = 0 V, tP = 300 μs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet 4 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Block diagram Inductive and overvoltage output clamp Terms RL V 2 I IN 1 D Z D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Datasheet 5 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(T C) resp. R ON = f(T j); ID=12.6A; V IN=10V Ptot = f(T A) @ R thJA=55 K/W 5 60 max. W mΩ Rthjc = 1.1 K/W R DS(on) 4 Ptot 3.5 3 2.5 40 typ. 30 2 SMD @ 6cm2 20 1.5 1 10 0.5 0 -50 -25 0 25 50 75 100 °C 0 -50 150 TA;TC -25 0 25 50 75 100 125 °C 175 Tj 3 On-state resistance 4 Typ. input threshold voltage R ON = f(T j); ID= 12.6A; V IN=5V VIN(th) = f(T j); I D = 1.2 mA; V DS = 12V 80 2 V mΩ max. 50 VGS(th) R DS(on) 1.6 60 typ. 40 1.4 1.2 1 0.8 30 0.6 20 0.4 10 0 -50 0.2 -25 0 25 50 75 100 125 °C 0 -50 175 Tj Datasheet -25 0 25 50 75 100 °C 150 Tj 6 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(V IN); V DS=12V; TJstart =25 °C ID(lim) = f(T j); VDS=12V Parameter: V IN 50 60 A A 50 40 45 35 ID ID 40 30 35 25 30 Vin=10V 20 25 5V 20 15 15 10 10 5 5 0 1 2 3 4 5 6 7 V 8 0 -50 10 -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(V DS); TJstart=25 °C I DSS = f(T j) Parameter: V IN 60 25 A μA 50 10V 45 7V max. 20 I DSS 6V 40 ID 5V 35 4V 30 17.5 15 12.5 25 10 20 7.5 15 Vin=3V 5 10 typ. 2.5 5 0 0 1 2 3 4 V 0 -50 6 VDS Datasheet -25 0 25 50 75 100 125 °C 175 Tj 7 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D 9 Typ. overload current 10 Typ. transient thermal impedance I D(lim) = f(t), Vbb=12 V, no heatsink Z thJA=f(t p) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 10 70 2 K/W A D=0.5 -40°C 10 1 0.2 25°C Z thJA I D(lim) 0.1 50 85°C 40 0.05 10 0 0.02 0.01 30 10 -1 10 -2 10 -3 150°C 20 Single pulse 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 ms t 5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp 11 Determination of ID(lim) I D(lim) = f(t); tm = 200µs Parameter: TJstart 70 A I D(lim) -40°C 50 25°C 40 85°C 30 150°C 20 10 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Package Outlines Package Outlines 6.5 +0.15 -0.05 A 0.15 MAX. per side 2.3 +0.05 -0.10 0.5 +0.08 -0.04 B (5) 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 ±0.1 0.51 MIN. 1 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Revision History 2 Revision History Version Rev. 1.4 Date Changes 2013-03-07 page 2: - added footnote “Not subject to production test, specified by design” for chapter/table Maximum Ratings - added footnote “Not subject to prod. test, calculated ...” for parameter Ptot - updated ESD HBM standard in chapter “Maximum Ratings” page 3: - updated test condition ID for parameter input threshold voltage VIN(th) - added footnote “Not subject to production test, calculated...” to the parameter Nominal load current ID(nom), ID(ISO) Rev. 1.3 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet 10 Rev. 1.4, 2013-03-07 Edition 2013-03-07 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2013. 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