BTS3160DAUMA1

Datasheet, Rev. 1.1, February 2008 BTS3160D 10mOhm Smart Low Side Power Switch Automotive Power Smart Low Side Power Switch HITFET - BTS3160D Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Assignment BTS3160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.1.1 5.2 5.2.1 5.3 Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Under Voltage Lock Out / Power On Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Readout of Fault Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Supply and Input Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 11 12 12 13 6 6.1 6.2 6.3 6.4 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing and Slopes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 17 18 20 7 7.1 7.2 7.3 7.4 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 22 25 8 8.1 8.2 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 9 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Datasheet 2 8 8 9 9 Rev. 1.1, 2008-02-28 BTS3160D Smart Low Side Power Switch HITFET - BTS3160D 1 Overview The BTS3160D is a one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is realized by a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. PG-TO-252-5-13 Features • • • • • • • Logic level input compatible to 3.3 V or 5V micro controllers Supply by Vbb line, down to 6 V Very low over all leakage current Providing digital fault information Electrostatic discharge protection (ESD) Green Product (RoHS compliant) AEC Qualified Table 1 Basic Electrical Data Drain voltage VD 40 V Supply voltage VS 6.0 … 45 V On-State resistance at 25°C RDS(ON,max) 10 mΩ Nominal load current IDnom 7.8 A Maximum inrush current IDSC 70 A Leakage current MOSFET at Vbb = 13.5 V, TJ = 85 °C IDSS 2 µA Supply current in off mode at Vbb = 13.5 V, TJ = 85 °C ISSS 4 µA Clamping Energy EAS 0.3 J Type Package BTS3160D PG-TO-252-5-13 Datasheet 3 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Overview Digital Diagnostic • • • Over temperature shutdown Over load shutdown Short circuit shutdown Protection Functions • • • • Electrostatic discharge (ESD) Under voltage lock out Over temperature (shutdown with latch) Over voltage (active clamped) Application • • • • • Micro controller compatible low side power switch with digital feedback for 12V loads All types of resistive, inductive and capacitive loads Suitable for loads with high inrush current, such as lamps Also suitable for LEDs because of low leakage current Replaces electromechanical relays, fuses and discrete circuits Description The BTS3160D is a latching one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology. The device is able to switch all kind of resistive, inductive and capacitive loads. For lamp loads the lamp-inrushcurrent, eight- to ten-times the nominal current, has to be considered. The maximal inrush current has to be below the minimum short circuit shutdown current. The ESD protection of the VS and IN/Fault pin is in relation to GND. The BTS3160D is supplied by the VS Pin. This Pin can be connected to battery line. The supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows to operate the device in the low ohmic range even with 3.3 V input signal. For PWM application the device offers smooth turn-on and off due to the embedded edge shaping function, in order to reduce EMC noise. The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it gets too high. This function is available even without supply. The over temperature protection is in order to save the device from overheating due to overload and bad cooling conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After thermal shutdown the device stays off until the latch is reset by a IN-Low signal. For high dynamic overload conditions such as short circuit the device will turn off if a certain load current is reached. The short circuit shutdown is a latch function. The device will stay off until the latch is reset by IN-Low signal. In order to reduce the device stress the edge shaping is disabled during short circuit turn off. Datasheet 4 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Block Diagram 2 Block Diagram VS IN / Fault Under voltage lockout Gate Driving Unit Drain Overvoltage Protection Overtemperature Protection ϑ Error Logic Short circuit Protection ESD Protection GND B loc k Diagram.emf Figure 1 Datasheet Block Diagram for the BTS3160D 5 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Block Diagram 2.1 Voltage and current naming definition Following figure shows all the terms used in this datasheet, with associated convention for positive values. Vbb Vbb IS VS RL VS Drain I IN VIN IN / Fault ID VD GND I GND GND Terms .emf Figure 2 Datasheet Terms 6 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS3160D (top view) Drain 6 (Tab) 5 GND 4 GND 3 2 IN / Fault 1 VS P inConfiguration.emf Figure 3 Pin Configuration PG-TO-252-5-13 3.2 Pin Definitions and Functions Pin Symbol Function 1 VS Supply Voltage; Connected to Battery Voltage with Reverse polarity protection 2 IN Control Input and Status Feedback; Digital input 3.3 V or 5 V logic. 3, Tab Drain Drain output; Protected low side power output channel 4,5 Ground; Signal ground, Pin 4 and 5 must be externally shorted1) GND 1) Not shorting pin 4 and 5 will considerably increase the on-state resistance and reduce the peak current capability. Datasheet 7 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; VS = 6 V to 30 V. All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Max. Unit Conditions Voltages 4.1.1 Supply voltage VS -0.3 30 V – 4.1.2 Supply voltage during active clamping VS(pulse) -0.3 45 V 2) 4.1.3 Drain voltage VD -0.3 40 V 3) 4.1.4 Drain voltage for short circuit protection VD(SC) 0 30 V – 4.1.5 Logic input voltage VIN -0.3 5.3 V – 4.1.6 Unclamped single pulse inductive energy EAS 0 0.3 J ID = 20 A; Vbb = 30 V TJ(Start) = 150°C 4.1.7 Load dump protection VLoadDump = VA + VS VLD 0 45 V TJ = 25°C Tj Tstg -40 150 °C – -55 150 °C – VESD -4 4 kV HBM4) Energies Temperatures 4.1.8 Junction Temperature 4.1.9 Storage Temperature ESD Susceptibility 4.1.10 ESD Resistivity on all pins 1) 2) 3) 4) Not subject to production test, specified by design. Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. Active clamped. ESD susceptibility, HBM according to EIA/JESD 22-A114B Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 8 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 4.2.1 Supply Voltage VS 6 13.5 30 V – 4.2.2 Supply current in off mode IS(OFF) – 1.5 – µA VIN = 0.0 V; VS = 13.5 V; TJ = 25 °C – – 4 VIN = 0.0 V; VS = 13.5 V; TJ = 85 °C1) – – 10 VIN = 0.0 V; VS = 13.5 V; TJ = 150 °C – 1.6 3 4.2.3 Supply current in on IS mA VIN = 5.0 V; VS = 30 V 1) Not subject to production test, specified by design. Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Pos. Thermal Resistance Parameter 4.3.1 Junction to Case 4.3.2 Junction to Ambient Symbol RthJC RthJA Limit Values Min. Typ. Max. – 0.9 1.1 – 80 – 45 Unit Conditions K/W 1) K/W 1) K/W 1) @min. footprint @ 6 cm² cooling area, see Figure 4 1) Not subject to production test, specified by design Datasheet 9 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics K/W 102 D = 0.5 101 D = 0.2 D = 0.1 ZthJA D = 0.05 1 D = 0.02 D = 0.01 Single pulse 10-1 10-6 10-5 10-4 10-3 10-2 10-1 1 101 102 103 s tp Zth.emf Figure 4 Typical transient thermal impedance ZthJA = f(tp) , D = tp/T, Ta = 25 °C Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 10 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5 Supply and Input Stage 5.1 Supply Circuit The Supply pin VS is protected against ESD pulses as shown in Figure 5. Due to an internal voltage regulator the device can be supplied from battery line. 6.0V ...30 V VS Regulator ZD GND Figure 5 Supply Circuit 5.1.1 Under Voltage Lock Out / Power On Reset S upply.emf In order to ensure a stable device behavior under all allowed conditions the Supply voltage VS is monitored by the under voltage lock out circuit. All device functions and protection are given for supply voltages above under voltage lockout VSUVON but parameter deviations are possible below VS(min). There is no failure feedback for VS < VSUVON. Device functional off VSUVOFF Figure 6 Datasheet VS VSUVON UV LO_Hys teresis .emf Under Voltage Lock Out 11 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5.2 Input Circuit Figure 7 shows the input circuit of the BTS3160D. It’s ensured that the device switches off in case of open input pin. A zener structure protects the input circuit against ESD pulses. As the BTS3160D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to “Readout of Fault Information” on Page 12 IN/Fault 20µA : 100µA 1.0mA : 3.0mA GND input.emf Figure 7 Input Circuit 5.2.1 Readout of Fault Information The BTS3160D provides digital status information via an increased current on the IN / Fault pin. The voltage on this pin is pulled down to logic low if a proper resistor is used. An example for the required circuitry is shown in Figure 8. The increased current IIN(fault) is an order of magnitude above the normal operation current IIN(nom) therefore the voltage at the IN/Fault pin will decrease. The voltage at the pin is determined by the current and the serial resistor. We recommend 3k3 for a 3.3V µC and 5k6 for a 5V µC to achieve a logic low signal. For detailed calculation please refer to “Dimensioning of serial Resistor at IN pin” on Page 26 V bb V CC V CC VS Micro controller BTS3160D DO R1 I DO I IN IN/Fault DI GND GND VDI GND Figure 8 Datasheet Fault_Readout.emf Readout of Fault Information 12 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5.3 Electrical Characteristics Supply and Input Stages VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Under Voltage Lockout 5.3.1 UV-switch-on voltage VSUVON – – 5.5 V VS = 5.5 V 5.3.2 UV-switch-off voltage VSUVOFF 4.0 – – V VS = 4.0 V 5.3.3 UV-switch-off hysteresis VSUVHY – 0.2 – V VSUVON - VSUVOFF Digital Input / Fault Feedback 5.3.4 Low level voltage VINL – – 0.8 V VS = 6 V; no fault condition 5.3.5 High level voltage VINH 2.0 – – V VS = 6 V; no fault condition 5.3.6 Input pull down current IIN 20 50 100 µA VIN = 5.3 V; no fault condition IIN-Fault 1 2 3 mA VIN = 5.3 V; all fault conditions 600 uA 1) 5.3.7 Input Fault ON threshold IFault_ONth 1) not subject to production test Datasheet 13 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6 Power Stage The power stage is built by a N-channel vertical power MOSFET (DMOS) 6.1 Output On-state Resistance The on-state resistance depends on the supply voltage as well as on the junction temperature TJ. Figure 9 shows the dependency over temperature for the typical on-state resistance RDS(on),while Figure 10 shows the dependency over Vs. VS=10V RDS(on) [ mΩ ] 16,00 14,00 12,00 typ. 10,00 8,00 6,00 4,00 -40 -15 10 35 60 85 110 135 150 T [ °C ] rds on_Tj.emf Figure 9 Datasheet Typical On-State Resistance 14 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 50,00 45,00 R DS(on) [mΩ ] 40,00 35,00 30,00 25,00 20,00 typ. 15,00 10,00 5,00 0 10 20 30 VS [V] rdson_V s.emf Figure 10 Typical On-State Resistance RDSon = f(VS) 70 VS= 10V 60 & VS= 30V VS = 6V ID [A] 50 40 typ. 30 20 10 0 0 0,5 1 VDS [V] Figure 11 Datasheet 1,5 Outputchar.emf Typical Output Characteristics, TJstart = 25 °C, Parameter VS 15 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6,00 I DSS [µA] Idss [µA] 4,00 2,00 typ. 0,00 -50 -25 0 25 50 75 100 125 150 175 Tj [°C] TJ [°C] Figure 12 Datasheet Zeroindrain.emf Typical Zero Input Voltage Drain Current, IDSS = f(TJ) 16 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.2 Output Timing and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 13 shows the timing definition. IN High Low VD t on t off tond t toffd V bb 90 % 60 % -dVD / dto n 40 % dV D / dtoff 10 % t OutputTiming.emf Figure 13 Switching a resistive Load In order to minimize the emission during switching the BTS3160D limits the slopes during turn on- and off to slow slew rate settings.The definition is shown in Figure 14. For best performance of the edge shaping the supply pin VS should be connected to battery voltage. For supply voltages other than nominal battery the edge shaping can differ from the values in the electrical characteristics table below. IN High Low t ID 100 % |di/dt|slow 80 % |di/dt|fast 20 % |di/dt|slow t E dgeS haping.emf Figure 14 Datasheet Typical Slopes for resistive Loads 17 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.3 Inductive Output Clamp When switching off inductive loads with low-side switches, the Drain Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. The BTS3160D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 15 for more details. Drain GND OutputClamp.emf Figure 15 Output Clamp Overtemperature or short circuit detected IN High Low t ID t Von V DAZ V bb t Induc tiv eLoad.emf Figure 16 Switching an inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3160D. This energy can be calculated with following equation: V bb – V DS(CL)   RL ⋅ IL L - ⋅ ln 1 – ---------------------------------E = V DS(CL) ⋅ ----------------------------------  + I L ⋅ -----RL RL V bb – V DS(CL)   Following equation simplifies under assumption of RL = 0  V bb 2  1 E = --- LI L ⋅  1 – ---------------------------------- 2 V – V  bb DS(CL)  Datasheet 18 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage Figure 17 shows the inductance / current combination the BTS3160D can handle. For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 8 L [mH] 10,0 Vbb = 30V 1,0 Max. 0,1 0,0 10 I D [A] 100 EAS.emf Figure 17 Datasheet Maximum load inductance for single pulse L=f (IL), Tj,start= 150 °C 19 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.4 Electrical Characteristics Power Stage VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. – 8 10 mΩ ID = 20 A; VIN = high; VS = 10 V; TJ = 25 °C – 14 18 mΩ ID = 20 A; VIN = high; VS = 10 V; TJ = 150 °C Power Supply 6.4.1 On-state resistance RDS(on) 6.4.2 Nominal load current IDnom 7.8 9.7 – A 1) 6.4.3 ISO load current IDISO 33 41 – A 1) 6.4.4 Off state drain current IDSS – 6 12 µA Vbb = 32 V; VIN = 0.0 V – 1 2 µA 1) 6.4.5 Von = 0.5 V; TA = 85 °C SMD2); VIN = 5.0 V; VS ≥ 10 V; TJ < 150 °C Von = 0.5 V; TC = 85 °C; VIN = 5.0 V; VS ≥ 10 V; TJ < 150 °C Vbb = 13.5 V; VIN = 0.0 V; TJ = 85 °C Dynamic Characteristics 6.4.6 Turn-on delay tond 20 75 110 µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.7 Turn-on time ton 80 150 250 µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.8 Turn-off delay toffd 20 75 110 µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.9 Turn-off time toff 80 150 250 µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.10 Slew rate on -dVD/dton 0.1 0.3 0.7 V/µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.11 Slew rate off dVD/dtoff 0.3 0.7 V/µs RL = 2.2 Ω; Vbb = VS = 13.5 V 6.4.12 Slew rate during edge shaping |dI/dt|slow – 0.04 0.07 A/µs 1) Datasheet 0.1 20 RL = 2.2 Ω Vbb = VS = 13.5 V; ohmic load Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Power Stage VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 6.4.13 Slew rate between edge shaping |dI/dt|fast – – 0.3 A/µs 1) 6.4.14 Fault signal delay tdfault – 4 10 µs 1) VD -0.3 -1.0 -1.5 V ID = -12 A; VS = 0 V; VIN = 0.0 V RL = 2.2 Ω Vbb = VS = 13.5 V; ohmic load Inverse Diode 6.4.15 Inverse Diode forward voltage 1) Not subject to production test. 2) Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 21 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 7 Protection Functions The device provides embedded protection functions against over temperature, over load and short circuit. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 7.1 Thermal Protection The device is protected against over temperature resulting due to overload and / or bad cooling conditions. The BTS3160D has a thermal latch function. The thermal latch is reset by IN-Low signal. See Figure 18 for the latch behavior. The diagram naming refers to Figure 8 Thermal shutdown IN High Low t TJ TJSD ∆TJSD tdfau lt IIN t I INfault I INno m 0 t DI High Low t Thermal_fault_latch.emf Figure 18 Status Feedback via Input Current at Over temperature 7.2 Over Voltage Protection The BTS3160D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. This stage is also used for inductive clamping. See “Inductive Output Clamp” on Page 18 for details. 7.3 Short Circuit Protection The condition short circuit is an overload condition of the device. Dependent on the short circuit resistance the current increase is more or less steep. In condition of high ohmic short the device heats up and the turn off is due to over temperature. In condition low ohmic short the device turns off on a threshold current level before the over temperature condition is detected. In order to allow short current spikes, the turn off occurs with the delay time tdSC. Figure 19 shows the behavior mentioned above. In this example the short circuit always occurs after the device has switched on under normal load condition - Short circuit type 2. The definitions of voltages and currents are in respect to Figure 8. The behavior of VDI also depends on RIN. Datasheet 22 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions VDO Overload Thermal shutdown Short circuit Short Circuit shut off short spike High Low ID t I DSC t d sc t d sc I Dno m tdfau lt I IN t dfau lt t I INfault I INno m 0 t V DI High Low t S hort circuit Ty pe 2.emf Figure 19 IN High Short Circuit during On State, Typical Behavior for Ohmic Loads Short Circuit shut off Thermal shutdown short spike Low ID t I DSC td sc td sc I Dn o m I IN t d fau lt td fau lt t I INfau lt I INn o m 0 t DI High Low t S hort c irc uit Ty pe 1.emf Figure 20 Turn On into Existing Short Circuit, Typical Behavior for Ohmic Loads The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Figure 20. Datasheet 23 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions The test setup for short circuit characterization is shown in Figure 21. The BTS3160D is a low side switch. Therefore it can be assumed that the micro controller and device GND connection have a low impedance. The Vs voltage needs to be stabilized to ensure the protection features. In application this is often already covered from the module standard circuits. RSC ID LSC Vcc VS Drain IN V bb 5V Control circuit RIN BTS3160 GND GND Figure 21 Datasheet S etup_S hort_c irc uit.emf Test Setup for Short Circuit Characterization Test 24 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 7.4 Electrical Characteristics Protection VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Thermal Protection 7.4.1 Thermal shut down junction temperature TJSD 150 1751) – °C VS = 6.0 V 7.4.2 Thermal hysteresis ∆TJSD – 10 – K 1) VDAZ 40 44 – V ID = 10 mA; VS = 0.0 V; VIN = 0.0 V – 45 49 V ID = 8 A; VS = 0.0 V; VIN = 0.0 V VS = 6.0 V Over Voltage Protection 7.4.3 Drain source clamp voltage Short Circuit Protection, 6.0 V ≤ VS ≤ 30 V 7.4.4 Short circuit shutdown current for max. tdSC IDSC 70 100 130 A 7.4.5 Short circuit shutdown delay tdSC 1 4 8 µs 1) ID > ID(SC), ohmic load 1) Not subject to production test, specified by design. Datasheet 25 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Application Information 8 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 8.1 Dimensioning of serial Resistor at IN pin In order to use the digital feedback function of the device, there is serial resistor necessary between the IN pin and the driver (micro controller) To calculate the value of this serial resistor on the input pin three device conditions as well as the driver (micro controller) abilities needs to be taken into account. The driver must be capable of driving at least IFault_ONth to avoid immediate restart Figure 22 shows the circuit used for reading out the digital status. V bb Microcontroller V CC V CC I DO DO VRIN RIN VS IIN BTS3160D IN/Fault DI V DO 20µA : 100µA V DI GND GND GND Figure 22 Fault information 1.0mA : 3.0mA Fault_RIN.emf Circuitry to readout fault information Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Conditions to be meet by the circuitry: • • • During normal operation VIN must be higher than VINH,min to switch ON. During fault condition the max. capability of the driver (micro controller) must not be exceeded and the logic low level at DI must be ensured by a voltage drop over the serial resistor RIN while the device fault current is flowing. During fault state the device keeps protection active as long as it can sink more than the threshold current IFault_ONth. In case the device can not sink this current, it resets the protection and waits for the next input high signal. So to avoid an unintentional switch ON/OFF behavior, the input current must be above this threshold. Datasheet 26 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Application Information Conditions in formulas: 1. µCoutput current,min > µCHIGH,max / RIN > IFault_ONth with µCoutput current,min referring to the micro controller maximum output current capability. with µCHIGH,max referring to the maximal high output voltage of the micro controller driving stage. This condition is valid during status feedback operation mode. 2. VIN = µCHIGH,min - (RIN * IIN,max) > VINH,min with µCHIGH,min referring to the minimal high output voltage of the micro controller driving stage. This condition is valid during normal operation mode 3. µCHIGH,max - (RIN * IIN-Fault,min) < µC(DI)L,max with µC(DI)L,max referring to the maximum logic low voltage of the micro controller input stage The maximum current is either defined by the BTS3160D or the micro controller driving stage This condition is valid during status feedback operation mode 4. IIN-Fault= µCHIGH,min / RIN > IFault_ONth with µCHIGH,min referring to the minimum logic low voltage of the micro controller output stage The BTS3160D is resetting the fault latch, if the current on IN pin goes below IFault_ONth. This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. For a typical 5V micro controller with output current capability in the 3 mA range, a resistor range from 7.5 kΩ down to 4.5 kΩ can be used. For a typical 3.3V micro controller a range from 4.6 kΩ to 2.5 kΩ is suitable. We recommend 3k3 for a 3.3V µC and 5k6 for a 5V µC to achieve a logic low signal. 8.2 • Further Application Information For further information you may contact http://www.infineon.com/hitfet Datasheet 27 Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Package Outlines Package Outlines A 5.7 MAX. 1) B 9.98 ±0.5 6.22 -0.2 0.15 MAX. per side 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 5 x 0.6 ±0.1 1.14 4.56 0.5 +0.08 -0.04 0.1 B 0.25 M A B 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. Figure 23 2.3 +0.05 -0.10 (5) 0.8 ±0.15 1±0.1 (4.24) 6.5 +0.15 -0.05 0.51 MIN. 9 PG-TO252-5-13-PO V0.1 PG-TO-252-5-13 (Plastic Green Thin Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 28 Dimensions in mm Rev. 1.1, 2008-02-28 Smart Low Side Power Switch HITFET - BTS3160D Revision History 10 Version Revision History Date Changes Rev. 1.1 2008-02-28 released automotive green and robust version changed package naming to green package, updated package drawing updated package drawing and description text on overview page added RoHS logo to overview page and added green feature to list Rev. 1.0 2007-08-14 first released datasheet revision Datasheet 29 Rev. 1.1, 2008-02-28 Edition 2008-02-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.