BTS3205N

Data Sheet, Rev. 1.1, September 2011 HITFET - BTS3205N Smart Low-Side Power Switch Automotive Power Smart Low-Side Power Switch BTS3205N 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS3205N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 4.1 4.2 4.2.1 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 11 11 12 12 13 6 6.1 6.2 6.3 6.4 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 15 17 18 7 Package Outlines BTS3205N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Data Sheet 2 7 7 8 8 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch HITFET 1 BTS3205N Overview Features • • • • • • • • • Logic Level input Short circuit and Overload protection Current limitation Input protection (ESD) Thermal protection with auto restart Compatible to standard Power MOSFET Analog driving possible Green Product (RoHS compliant) AEC Qualified PG-SOT-223-4 Description The BTS3205N is a one channel low-side power switch in PG-SOT-223-4 package providing embedded protective functions. The device is monolithic integrated and consist of an N-channel power MOSFET transistor and additional protection circuitry. Table 1 Product Summary Drain Voltage Input Voltage Typical On-State Resistance at Tj = 25°C and Vin = 10V Maximum On-State Resistance at Tj = 150°C and Vin = 10V Nominal Load Current Drain Current Single Clamping Energy VD VIN(max) RDS(ON,amb typ) RDS(ON,hot max) IDnom(min) ID EAS 42 V1) 10 V 0.7 Ω 1.9 Ω 350 mA 600 mA2) 65 mJ 1) Active clamped 2) Internally limited Type Package Marking BTS3205N PG-SOT-223-4 3205N Data Sheet 3 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Overview Protective Functions • • • • Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with auto restart Short circuit protection Fault Information • • Thermal shutdown Short to Battery and overload Applications • • • • Designed for driving Relays in Automotive Applications All types of resistive, inductive and capacitive loads Suitable for loads with peak currents Replaces discrete circuits Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum current capabilities. The BTS3205N offers ESD protection of the IN Pin in relation to the Source Pin. The overtemperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal shutdown the device tries to sink an increased input current to feedback the fault condition. The BTS3205N has a thermal-auto-restart function, the device will turn on again after the measured temperature has dropped down for the thermal hysteresis. The over voltage protection is active during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain - Source voltage to the defined clamping voltage. This function is available regardless of the input pin state. Data Sheet 4 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block DiagramTerms 2 Block Diagram Drain Gate Driving Unit IN Overvoltage Protection Overtemperature Protection Overload detection and Current limiter ESD Protection Source BlockDiagram _3205N.emf Figure 1 Block Diagram 2.1 Terms Figure 2 shows all external terms used in this data sheet. Vbb Vbb RL Rin V IN BTS3205N I IN IN Drain ID VD Source IS GND Terms.emf Figure 2 Data Sheet Terms 5 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Pin ConfigurationPin Assignment BTS3205N 3 Pin Configuration 3.1 Pin Assignment BTS3205N DRAIN (TAB) 4 1 IN 2 3 DRAIN SOURCE Figure 3 Pin Configuration PG-SOT-223-4 3.2 Pin Definitions and Functions Pin Symbol Function 1 IN Input / fault feedback 2, 4 Drain Load connection 3 Source Ground connection Data Sheet 6 Pin_SOT 223.emf Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsAbsolute Maximum Ratings 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Max. – 42 V 2) -0.2 10 V – self limited mA -0.2 V < VIN < 10 V -2 2 mA – 600 mA VIN < -0.2 V or VIN > 10 V 3) Tj = 25 °C Voltages 4.1.1 Drain voltage 4.1.2 Input Voltage 4.1.3 Input Current VD VIN IIN 4.1.4 4.1.5 Drain Current ID VIN = 0 V, ID = 10 mA Energies 4.1.6 Unclamped single pulse inductive energy EAS single pulse 0 65 mJ 4.1.7 Unclamped single pulse inductive energy single pulse – 30 mJ 4.1.8 Unclamped repetitive pulse inductive energy 1×104 cycles 0 18 mJ 4.1.9 Unclamped repetitive pulse inductive energy 1×106 cycles – 13 mJ 4.1.10 Total Power Dissipation Ptot – 0.78 W TJ Tstg -40 +150 °C – -55 +150 °C – VESD -2 2 IN Pin R = 1.5 k; C = 100 pF; TJ = 25 °C EAR ID = 350 mA; Vbb = 28 V; TJ(start) = 85 °C ID = 250 mA; Vbb = 28 V; TJ(start) = 150 °C ID = 200 mA; Vbb = 13.5 V; TJ(start) = 105 °C ID = 170 mA; Vbb = 13.5 V; TJ(start) = 105 °C 4) Ta = 85 °C Temperatures 4.1.11 Operating temperature 4.1.12 Storage temperature ESD Susceptibility 4.1.13 Electrostatic discharge voltage 5) kV 1) 2) 3) 4) Not subject to production test, specified by design. Active clamped. Internally limited. Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes). PCB is mounted vertical without blown air. 5) ESD susceptibility HBM according to EIA/JESD 22-A 114B, section 4. Data Sheet 7 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsThermal Resistance 4.2 Thermal Resistance Pos. Parameter Symbol 4.2.1 Junction to Soldering Point 4.2.2 Junction to Ambient RthJC RthJA Limit Values Unit Conditions Min. Typ. Max. – – 42 K/W 1) 2) – 63 – K/W 1) 2) 1) Not subject to production test, specified by design. 2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated on the DMOS. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2.1 Transient Thermal Impedance 90 K Zth [ / W ] 75 60 ZthJA 45 ZthJC 30 15 0 -5 10 10 -4 10 -3 -2 10 10 -1 1 1 10 tp [ s ] Figure 4 Data Sheet 10 2 10 3 Zth_3205 N.emf Typical Transient Thermal Impedance single pulse, ZthJA and ZthJC 8 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsThermal Resistance 102 D = 0.5 D = 0.2 1 ZthJA [K/W] 10 D = 0.1 D = 0.05 D = 0.02 1 D = 0.01 10 Single pulse -1 10 -6 10 -5 10 -4 -3 10 10 -2 10 -1 1 10 1 10 2 10 3 t p [s] pulse_BTS3205 N.emf Figure 5 Typical Transient Thermal Impedance ZthJA with different Duty cycles ZthJA = f(tp) , D = tp/T, Ta = 25 °C Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated for single pulse on the DMOS Data Sheet 9 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block Description and CharacteristicsInput and Power Stage 5 Block Description and Characteristics 5.1 Input and Power Stage 5.1.1 Input Circuit Figure 6 shows the input circuit of the BTS3205N. The zener Diode protects the input circuit against ESD pulses. The internal circuitry is supplied by the input PIN. During normal operation the Input is connected to the Gate of the power MOSFET. During fault condition the device tries to sink the current IINlim in order to give the fault information back to the driving circuit. I INnom Logic I IN IN Gate Fault condition ZD IINlim Source Figure 6 Input.emf Input Circuit 2,00 V IN(th) [ V ] 1,75 1,50 1,25 1,00 0,75 0,50 0,25 0,00 -50 -25 0 25 50 75 100 125 150 T [°C] Vinth.emf Figure 7 Typical Input Threshold Voltage Vinth = f(TJ); ID = 50 μA, VD = VIN 0,7 0,6 ID [ A ] 0,5 0,4 0,3 0,2 0,1 0 0 1 2 3 4 5 VIN [ V ] Transferchar.emf Figure 8 Data Sheet Typical Transfer Characteristic ID = f(VIN); VD = 12 V, TJstart = 25 °C 10 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block Description and CharacteristicsInput and Power Stage 5.1.2 Failure Feedback During failure condition the BTS3205N tries to sink a increased input current IINlim. 5.1.3 Output On-State Resistance The on-state resistance depends on the junction temperature TJ. Figure 9 shows this dependency for the typical on-state resistance RDS(on). 1,5 RDS(on) [ Ω ] 1,3 1,1 Vin = 5V 0,9 0,7 Vin = 10V 0,5 0,3 -50 -25 0 25 50 75 100 125 150 T [ °C ] rdson.emf Figure 9 Data Sheet Typical On-State Resistance, RDS(on) = f(TJ) 11 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block Description and CharacteristicsInput and Power Stage 5.1.4 Power Dissipation The maximum allowed power dissipation in Figure 10 is calculated by RthJC and RthJA. 1,00 R thJC=42 K/W Ptot / W R thJA=63 K/W 0,10 0,01 -50 -25 0 25 50 75 100 125 150 T / °C Ptot_3205N.emf Figure 10 Maximal Allowable Power Dissipation 5.1.5 Output Timing A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 11 shows the timing definition. IN [V] 5.0 0 t VD Vbb 90 % toff 10 % t Switching.emf ton Figure 11 Data Sheet Definition of Power Output Timing for Resistive Load 12 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block Description and CharacteristicsInput and Power Stage 5.1.6 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated. Electrical Characteristics: Input and Power Stage Tj = -40 ⋅C to +150 ⋅C , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Input 5.1.1 Nominal Input current IINnom – 10 30 μA 5.1.2 Input current protection mode IINlim – 100 150 μA 5.1.3 Input threshold voltage VINTH 1.3 1.7 2.2 V 0.8 – – V – 0.9 – Ω 5.1.4 VD = 0 V; VIN = 10 V VIN = 10 V; TJ = 150 °C VD = VIN; ID = 50 μA TJ = 25°C VD = VIN; ID = 50 μA, 150 °C Power Stage 5.1.5 On-State Resistance RDS(on) 1) TJ = 25 °C; VIN = 5 V; ID = 200mA 5.1.6 – 1.8 2.4 Ω TJ = 150 °C; VIN = 5 V; Ω 1) ID = 200mA 5.1.7 – 5.1.8 0.7 – – 1.4 1.9 Ω 5.1.9 Nominal load current IDnom 350 520 – mA 5.1.10 Zero input voltage drain current IDSS – – 5 μA – 2.5 6 μA – 4 7 μA Data Sheet 13 TJ = 25 °C; VIN = 10 V; ID = 200mA TJ = 150 °C; VIN = 10 V; ID = 200mA 1) TJ < 150 °C; TA = 105 °C2); VIN = 5 V VDS = 13.5 V;VIN = 0 V; TJ = 150 °C VDS = 32 V;VIN = 0 V; TJ = -40 °C to 85 °C VDS = 32 V;VIN = 0 V; TJ = 150 °C Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Block Description and CharacteristicsInput and Power Stage Electrical Characteristics: Input and Power Stage (cont’d) Tj = -40 ⋅C to +150 ⋅C , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Switching Vbb = 12 V, RL = 82 Ω – 16 38 μs 5.1.12 Turn-off time ton toff – 15 45 μs 5.1.13 Slew rate on dVds/dton – 2.5 9.3 V/μs 50% - 30% Vbb; RL = 82 Ω; VIN = 0 V to 10 V; Vbb = 12 V 5.1.14 Slew rate off dVds/dtoff – 6.0 18.2 V/μs 30% - 50% Vbb; RL = 82 Ω; VIN = 10 V to 0 V; Vbb = 12 V VD -1.0 -1.5 5.1.11 Turn-on time VIN = 10 V to 90% ID VIN = 0 V to 10% ID Inverse Diode 5.1.15 Inverse Diode forward voltage – V ID = -1 A; VIN = 0 V 1) Not subject to production test, calculated by RthJA and RDS(on). 2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes). PCB is mounted vertical without blown air. Data Sheet 14 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Protection FunctionsThermal Protection 6 Protection Functions The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 6.1 Thermal Protection The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor located in the Power MOSFET is used. The BTS3205N has a thermal auto-restart function. After the device has cooled down it will switch on again see Figure 12. Thermal shutdown restart IN 5V 0 t TJ TJSD ΔTJSD t I IN I INf IIS 0 t Thermal_fault_autorestart.emf Figure 12 Error Signal via Input Current at Thermal Shutdown 6.2 Overvoltage Protection When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. Drain Source OutputClamap.emf Figure 13 Output Clamp The BTS3205N is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 13 and Figure 14 for more details. Data Sheet 15 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Protection FunctionsOvervoltage Protection Turn off due to over temperature or short circuit IN 5V 0 t ID t VD V C lamp V bb t InductiveLoad.emf Figure 14 Switching an Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3205N. This energy can be calculated with following equation: V out ( CL ) ⎛ RL ⋅ IL ⎞ L E = ( V bb + V out ( CL ) ) ⋅ -----------------------⋅ ln ⎜ 1 + -----------------------⎟ + I L ⋅ -----RL R V ⎝ L out ( CL ) ⎠ (1) Following equation simplifies under assumption of RL = 0 ⎞ V bb 2 ⎛ E = 1 --- LI L ⋅ ⎜ 1 + -------------------------------------⎟ 2 V out ( CL ) – V bb ⎠ ⎝ Data Sheet (2) 16 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Protection FunctionsShort Circuit Protection 6.3 Short Circuit Protection The condition short circuit is an overload condition of the device. If the current reaches the value of Ilim the device starts to limit the current. In the condition of current limitation the device heats up. If the thermal shutdown temperature is reached the device turns off. Figure 15 shows this behavior. During the current limitation the input current is above IINnom. During the time period tdlim, the current can be above Ilim. Occurrence of Over current or high ohmic Short circuit Turn off due to over temperature Restart after short circuit turn off Restart into normal load condition IN 5V 0 t ID V b b /Zsc I lim td lim t TJ TJSD ΔTJSD t I IN I I N lim IINn o m 0 t Short_circuit.emf Figure 15 Short Circuit Behavior of BTS3205N As the device is a low side switch it can be assumed that the Source to Ground path has a neglectable low impedance and resistance. Therefore all impedance and resistance in the load path during short circuit is merged into Zsc. Data Sheet 17 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Protection FunctionsCharacteristics 6.4 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. TJSD ΔTJSD 150 1751) – °C – – 10 – K 1) VClamp 42 – 55 V VIN = 0 V; ID = 10 mA; Ilim 0.6 0.9 1.2 A 0.3 – – – – 1.4 VIN = 10 V;VDS = 12 V; tmeasure = 4 × tdlim TJ = 25 °C1) TJ = 150 °C TJ = -40 °C 1) – – 50 μs 1) Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis Overvoltage Protection 6.4.3 Drain clamp voltage Current Limitation and Short Circuit Protection 6.4.4 Current limitation 6.4.5 Current limitation delay time tdlim 1) Not subject to production test, specified by design. Data Sheet 18 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Package Outlines BTS3205N 7 Package Outlines BTS3205N 1.6±0.1 6.5 ±0.2 3 ±0.1 A 0.1 MAX. B 1 0.25 M A 2 3 2.3 0.7 ±0.1 4.6 3.5 ±0.2 0.5 MIN. 7 ±0.3 4 0.28 ±0.04 0.25 M B 0...10˚ SOT223-PO V04 Figure 16 PG-SOT-223-4 (Small Outline Transistor) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 19 Dimensions in mm Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch BTS3205N Revision History 8 Version Revision History Date Changes Rev. 1.1 2011-09-01 fixed a typo in EAR test conditions in chapter Max ratings updated Feature list and rephrased Detailed Description fixed a spelling error in 5.1.3 regarding “dependency” Rev. 1.0 2008-09-25 released data sheet Data Sheet 20 Rev. 1.1, 2011-09-01 Edition 2011-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.