BTS3256DAUMA1

BTS3256D Smart Low Si de Power Switch 1 Overview Features • Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation • Max. switching Frequency 12 kHz • Clear detection of digital fault signal also during fast PWM operation due to restart delay time • Thermal and overload protection with time controlled auto restart behavior • Time and Power limited active current limitation • Minimum RDS(on) achieved with 3.3 V or 5 V logic input • Electrostatic discharge protection (ESD) • Very low leakage current • Green Product (RoHS compliant) • Digital Diagnostic Features – Over temperature – Over load – Short circuit – Clear detection due to a restart delay time • Protection Functions – Enhanced short circuit protection with time and power limited active current limitation – Under voltage lock out – Over temperature with time and temperature controlled auto restart – Over load with power and time controlled auto restart – ESD protection Potential Applications • All types of resistive, inductive and capacitive loads • Suitable for loads with inrush current, such as motors, coils, solenoids or lamps • Suitable for EMC optimized switching in slow operation mode • Suitable for higher speed PWM controlled loads in fast operation mode • Replacement of electromechanical relays, fuses and discrete circuits • Micro controller compatible low side power switch with digital feedback for 12 V loads Datasheet www.infineon.com/HITFET 1 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Overview Description The BTS3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features.The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. The BTS3256D is an autorestart single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads. The ESD protection of the VS and IN/Fault pin is referenced to GND. The BTS3256D is supplied by the VS Pin. This Pin should be connected to a reverse protected battery line. The supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows the device to operate in the lowest ohmic range independent of the input signal level, 3.3 V or 5 V . For slow PWM application the device offers smooth turn-on and off due to the embedded edge shaping function, to reduce EMC noise. Furthermore the SRP pin can be used to customize the slew rate of the device in a wide range. The Device is designed for driving automotive loads like motors,valves, coils or bulbs in continous or PWM mode. The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain-Source voltage to a specified level. This function is available even without any supply. The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After thermal shutdown the device stays off for the specified restart delay time to enable a clear feedback readout on the microcontroller. After this time the device follows the IN signal state. At high dynamic overload conditions, such as short circuit, the device will either turn off immediately due to the implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay time. Shutdown of the device is triggered if the power dissipation during limitation is above the over power threshold. The short circuit shutdown is a timed restart function. The device will stay off for the specified time and afterwards follow the IN signal state. In order to reduce the device stress the edge shaping is disabled during protective turn off. Table 1 Basic Electrical Data Operating voltage VSOP 5.5 V.... 30 V Over voltage protection VD(AZ) 40 V Maximum ON State resistance at Tj = 150°C RDS(ON,max) 20 mΩ Typical ON State resistance at Tj = 25°C RDS(ON,typ) 10 mΩ Nominal load current ID(nom) 7.5 A Minimum current limitation ID(lim) 42 A Type Package Marking BTS3256D PG-TO-252-5-11 BTS3256D Datasheet 2 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 BTS3256D Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Assignment BTS3256D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.1.1 5.2 5.3 Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Under Voltage Lock Out / Power On Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics - Supply and Input Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 6.1 6.2 6.3 6.4 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timings and Slopes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 12 12 15 7 7.1 7.2 7.3 Control and Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Readout of Fault Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 18 18 19 8 8.1 8.2 8.3 8.4 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 20 20 20 23 9 9.1 9.2 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Datasheet 3 6 6 7 7 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D BTS3256D Block Diagram 2 BTS3256D Block Diagram VS Drain Slew rate control SRP Under voltage lockout Gate Driving Unit IN / Fault ESD protection Overvoltage Protection Overtemperature Protection Overload Protection Short circuit Protection ϑ GND BlockDiagram.emf Figure 1 2.1 Block Diagram for the BTS3256D Voltage and current naming definition Following figure shows all the terms used in this Datasheet, with associated convention for positive values. Vbb V bb IS RL VS VS Drain SRP VSRP I IN VIN IN / Fault ID VD GND I GND GND Terms.emf Figure 2 Datasheet Terms 4 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS3256D (top view ) Drain 6 ( Tab) 5 GND 4 SRP 3 Drain 2 IN 1 VS PinConfiguration.emf Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 VS Supply Voltage; Connected to Battery Voltage with Reverse protection Diode and Filter against EMC 2 IN Control Input and Status Feedback; Digital input 3.3 V or 5 V logic. 3, Tab Drain Drain output; Protected low side power output channel, usually connected via load to battery 4 SRP Slew Rate Preset; Used to define slew rate, see Chapter 7.2 for details 5 GND Ground; Power ground, pin connection needs to carry the load current from Drain Datasheet 5 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings1) Tj = -40°C to150°C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Number VS -0.3 – Voltages Supply voltage Supply voltage during active clamping VS(pulse) -0.3 – 30 V – P_4.1.1 2) V – P_4.1.2 3) 45 Drain voltage VD -0.3 – 40 V – P_4.1.3 Drain voltage for short circuit protection VD(SC) 0 30 V 4) P_4.1.4 Logic input voltage VIN -0.3 – 5.5 V – P_4.1.5 P_4.1.6 P_4.1.7 – VSRP -0.3 – 5.5 V 5) EAS 0 0.3 J 6) Junction Temperature Tj -40 – 150 °C – P_4.1.9 Storage Temperature Tstg -55 – 150 °C – P_4.1.10 VESD IN OUT – -4 -8 – – – – 4 8 kV kV kV HBM7) P_4.1.11 Slew Rate Preset maximum voltages Energies Unclamped single pulse inductive energy – ID = 22 A; Vbb = 30 V Temperatures ESD Susceptibility ESD Resistivity on input pins (IN,SRP,VS) on Drain and GND pins 1) 2) 3) 4) 5) Not subject to production test, specified by design. Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. Active clamped. The Device can not be switched on if VD > VD(SC) SRP Pin is driven by an internal current source, so active driving from outside is not required,it may affect lifetime and could cause parameter shifts outside the range given in datasheet 6) Refer to Figure 13 for maximum allowed inductance values 7) ESD susceptibility, HBM according to EIA/JESD 22-A114B, section4 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 6 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D General Product Characteristics 4.2 Table 3 Functional Range Functional Range Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Supply Voltage VS 5.5 – 30 V 1) P_4.2.1 Supply current in on IS – – 3 mA – P_4.2.2 1) Refer to Figure 19 for Short Circuit test setup Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Table 4 Thermal Resistance Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to Case1) Junction to ambient 1) RthjC – 0.9 1.1 K/W – P_4.3.1 RthjA – – 80 45 – – K/W @min. footprint K/W @ 6 cm2 cooling area, see Figure 4 P_4.3.2 1) Not subject to production test, specified by design Datasheet 7 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D General Product Characteristics K/W 100 0.5 10 0.2 Z thJA 0.1 0.05 1 0.02 0.01 Single pulse 0.1 -6 10 Figure 4 Datasheet 10 -5 10 -4 10 -3 10 tp -2 10 -1 1 10 10 2 3 10 s Zth.emf Typical transient thermal impedance ZthJA = f(tp) , Pulse D = tp/T, Ta = 25 °C Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB mounted vertical without blown air. 8 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Supply and Input Stage 5 Supply and Input Stage 5.1 Supply Circuit The Supply pin VS is protected against ESD pulses as shown in Figure 5. Due to an internal voltage regulator the device can be supplied from a reverse polarity protected battery line. 5.5V .. 30V BTS3256 D VS Regulator ZD GND Figure 5 5.1.1 Supply .emf Supply Circuit Under Voltage Lock Out / Power On Reset In order to ensure a stable device behavior under all allowed conditions the Supply voltage VS is monitored by the under voltage lock out circuit. All device functions are only given for supply voltages above under voltage lockout. There is no failure feedback for VS < VSUVON. Device functional off VSUVOFF V SUVON UVLO.emf Figure 6 5.2 Under Voltage Lock Out Input Circuit Figure 7 shows the input circuit of the BTS3256D. It’s ensured that the device switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the BTS3256D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis “Readout of Fault Information” on Page 18. Datasheet 9 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Supply and Input Stage IN/Fault 20µA : 100µA 1.0mA : 3.0mA GND Figure 7 5.3 Table 5 input.emf Input Circuit Electrical Characteristics - Supply and Input Stages Electrical Characteristics - Supply and Input Stages VS = 5.5 V to 30 V, Tj = -40°C to150°C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Under Voltage Lockout UV-switch-on voltage VSUVON – – 5.6 V – P_5.3.1 UV-switch-off voltage VSUVOFF 4.0 – 5.5 V – P_5.3.2 UV-switch-off hysteresis VSUVHY – 0.2 – V VSUVON - VSUVOFF P_5.3.3 Low level voltage VINL -0.3 – 0.8 V – P_5.3.4 High level voltage VINH 2.0 – 5.5 V – P_5.3.5 Input pull down current IIN 20 50 100 µA VIN = 5.3 V; no fault condition P_5.3.6 Input pull down current in Fault IIN-Fault 1 2 3 mA VIN = 5.3 V; all fault conditions P_5.3.7 Digital Input / Fault Feedback Datasheet 10 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage 6 Power Stage The power stage is built by a N-channel vertical power MOSFET (DMOS). 6.1 Output On-state Resistance The on-state resistance depends on the junction temperature TJ. Figure 8 shows this dependence for the typical on-state resistance RDS(on). 18 RDS(on) [ mΩ ] 16 14 12 typ. 10 8 6 -50 -25 0 25 50 75 100 125 150 175 T [ °C ] rdson_Tj.emf Figure 8 Typical On-State Resistance RDSon = f(TJ), VS = 10 V, VIN = high RDS(on) [ mΩ ] 31 26 21 16 typ. 11 6 0 10 20 VS [ V ] Figure 9 Datasheet 30 rdson_Vs.emf Typical On-State Resistance RDSon = f(VS), VIN=HIGH, Tambient=25°C 11 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage 6.2 Output Timings and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 10 shows the timing definition. IN High Low VD ton toff tond t toffd V bb 90 % 80 % |dv/dt| shaping |dv/dt|on 20 % 10 % |dv/dt|off |dv/dt|shaping |dv/dt| shaping t Figure 10 OutputTiming.em Definition of Power Output Timing for Resistive Load In order to minimize the emission during switching, the BTS3256D limits the slopes during turn on and off at slow slew rate settings. For best performance of the edge shaping, the supply pin VS should be connected to battery voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the electrical characteristics table below. 6.3 Inductive Output Clamp When switching off inductive loads with low-side switches, the Drain Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. The BTS3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 11 for more details. Drain GND output_clamp_curcuit.emf Figure 11 Datasheet Output Clamp 12 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage IN Overtemperature or short circuit detected High Low t ID t Von VD A Z V bb t inductive_output_clamp.emf Figure 12 Switching off an inductive Load While demagnetization of inductive loads, energy has to be dissipated in the BTS3256D. This energy can be calculated with following equation: V bb – V D(AZ) ⎛ RL ⋅ IL ⎞ L - ⋅ ln ⎜1 – --------------------------------E = V D(AZ) ⋅ ------------------------------⎟ + I L ⋅ -----RL V bb – V D ( AZ ) ⎠ RL ⎝ (6.1) Following equation simplifies under assumption of RL = 0 V bb ⎞ 2 ⎛ 1 -⎟ E = --- LI L ⋅ ⎜ 1 – ------------------------------2 V – V ⎝ bb D(AZ) ⎠ (6.2) Figure 13 shows the inductance / current combination the BTS3256D can handle. For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 6. Datasheet 13 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage 10,00 Max. L [ mH ] 1,00 0,10 0,01 10 Figure 13 Datasheet ID [ A ] 50 EAS .emf Maximum allowed inductance values for single switch off (EAS) L=f (IL), Tj,start= 150 °C, Vbb=30V, RL= 0 Ω 14 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage 6.4 Table 6 Electrical Characteristics - Power Stage Electrical Characteristics - Power Stage VS = 5.5 V to 30 V, Tj = -40°C to150°C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Number P_6.4.1 Power Supply On-state resistance RDS(on) – 10 – mΩ TJ = 25°C; ID = 20 A; VIN = high VS = 10 V – 16 20 mΩ TJ = 150°C; ID = 20 A; VIN = high VS = 10 V Nominal load current1) ID(nom) 7.5 8.7 – A TJ < 150°C; TA 85°C SMD2); VIN = high; VS ≥ 10 V; VDS = 0.5 V P_6.4.2 ISO load current ID(ISO) 31 33 – A TJ < 150°C; TC = 85°C; VIN = high; VS ≥ 10 V; VDS = 0.5 V P_6.4.3 Off state drain current IDSS – 6 12 µA VD = 32 V; VIN = low P_6.4.4 – 1 2 µA1) TJ = 85°C; VD = 13.5 V; VIN = low P_6.4.5 ISSS – 3 8 µA TJ = 85°C; VD = 13.5 V; VIN = low P_6.4.6 tinit – 10 25 µs VS > 6V P_6.4.7 first rising edge on IN pin. – 4 10 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 Standby supply current Dynamic Characteristics power up settling time Timings with fastest slew rate setting Turn-on delay Datasheet tond_fast 15 P_6.4.8 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage Table 6 Electrical Characteristics - Power Stage (cont’d) VS = 5.5 V to 30 V, Tj = -40°C to150°C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Number Min. Typ. Max. Unit Note or Test Condition Turn-on time ton_fast – 11 22 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.9– Turn-off delay toffd_fast 4 10 15 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.10– Turn-off time toff_fast 9 16 24 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.11– Slew rate on -dVD/dton_fast 1.2 2.2 3.8 V/µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.12– Slew rate off dVD/dtoff_fast 1.2 2.2 3.8 V/µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.13– Slew rate during edge shaping |dV/dt|shaping_fast – 0.66 – V/µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 P_6.4.14– Timings with slowest slew rate setting Turn-on delay tond_slow – 22 60 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.15– Turn-on time ton_slow – 85 200 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.16– Turn-off delay toffd_slow – 75 110 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.17– Turn-off time toff_slow 40 150 220 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.18– Datasheet 16 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Power Stage Table 6 Electrical Characteristics - Power Stage (cont’d) VS = 5.5 V to 30 V, Tj = -40°C to150°C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Number Slew rate on -dVD/dton_slow 0.08 0.2 0.6 V/µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.19 Slew rate off dVD/dtoff_slow 0.08 0.2 0.6 V/µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.20 Slew rate during edge shaping |dV/dt|shaping_slow – V/µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V; see Figure 10 P_6.4.21 V P_6.4.22 0.088 – Inverse Diode Inverse Diode forward voltage VD -0.3 -1.0 -1.5 ID = -12 A; VS = 0 V; VIN = 0.0 V 1) Not subject to production test, specified by Design. 2) Device mounted according to EIA/JESD 52_2, FR4, 50 × 50 × 1.5 mm; 35 µm Cu, 5 µm Sn; 6 cm2. PCB mounted without blown air Datasheet 17 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Control and Diagnosis 7 Control and Diagnosis The BTS3256D provides digital fault feedback on the IN pin without the need of an ADC. Additonally the device features an adjustable slew rate via the SRP pin. 7.1 Readout of Fault Information The BTS3256D provides digital status information via an increased current on the IN / Fault pin. The voltage on this pin is pulled down to logic low when a fitting serial resistor is used. An example for the required circuitry is shown in Figure 14. The increased current IIN(fault) is one order of magnitude above the normal operation current IIN. A 3k3 for a 3.3V µC or 5k6 for a 5V µC is recommended. For detailed calculation please refer to “Dimensioning of serial Resistor at IN pin” on Page 24. V bb V CC V CC VS Micro controller BTS3256 DO Fault =1 R1 I DO I IN IN/Fault 0 0 0 DI GND GND VDI GND Fault_readout.emf Figure 14 7.2 Readout of feedback information and XOR logic in micro Adjustable Slew Rate In order to optimize electromagnitic emission, the switching speed of the MOSFET can be adjusted by connecting an external resistor between SRP pin and GND. This allows for balancing between electromagnetic emissions and power dissipation. RSRP-min represents the minimum slew rate Slew ratemin and RSRP-max represents the maximum slew rate Slew ratemax. A short to GND causes the minimum Slew ratemin. Open pin condition causes the maximum Slew ratemax. Figure 15 shows the relation between the resistor value and the slew rate of BTS3256D. Datasheet 18 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Control and Diagnosis 7.3 Table 7 Electrical Characteristics - Diagnostic Electrical Characteristics - Diagnostic Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Number Slew rate control Slew ratemin Slew ratemin 0.08 0.2 0.6 V/µs RSRP = 0 Ω VS = 13.5 V; ohmic load P_7.3.1 Slew rate15k Slew rate15k 0.2 0.6 – V/µs RSRP = 15 kΩ VS = 13.5 V; ohmic load P_7.3.2 Slew rate30k Slew rate30k 0.7 1.45 – V/µs RSRP = 30 kΩ VS = 13.5 V; ohmic load P_7.3.3 Slew ratemax Slew ratemax 1.2 2.2 3.8 V/µs SRP pin open VS = 13.5 V; ohmic load P_7.3.4 2,5 Slew rate [ V/µs ] 2 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 R SRP [ kΩ ] Figure 15 Datasheet Slewrate.emf Typical relation between slew rate and resistor values used on RSRP (Vbat=13.5V) 19 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Protection Functions 8 Protection Functions The device provides embedded protection functions against over temperature, over load and short circuit. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 8.1 Thermal Protection The device is protected against over temperature resulting from overload and / or bad cooling conditions. The BTS3256D has a thermal restart function. When overheating occurs, the device switches off for the restart delay time trestart. After this time the device restarts if the temperature is below threshold and the IN has logic high level. The fault feedback is activated during over temperature situation. See Figure 16 for the restart behavior. The diagram naming refers to Figure 14. Thermal shutdown IN High After delay time , IN is high Over temperature is gone Don’t care Low t TJ TJ SD ΔTJSD t IIN IINfault IINnom 0 VDI t high low t trestart thermal_fault_autorestart.emf Figure 16 8.2 Status Feedback via Input Current at Over temperature Over Voltage Protection The BTS3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. This stage is also used for inductive clamping. See “Inductive Output Clamp” on Page 12 for details. 8.3 Short Circuit Protection The condition short circuit is an overload condition of the device. In a short circuit condition, the resulting dI / dt is a function of the short circuit resistance. The BTS3256D incorporates 2 shut down strategies for maximum robustness in the presence of short circuits: - immediate shut down in the case of low ohmic shorts by power detection exceeding Pmax Datasheet 20 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Protection Functions - over temperature shut down in the case of an overload condition The additional feature of this device is a limitation of the load current to Ilim for a maximum time of tlim. If the condition is normalized in a shorter time than tlim, the device stays on, if not the device switch off for trestart and tries to restart in case the IN pin is still high. From first switch off the fault feedback will be activated during trestart and continues until the IN pin goes low or normal condition is reached. Figure 18 shows the behavior mentioned above. In this example first a shorted load occurs which causes the device to limit the current. The device stays on, because the load current returns to normal condition before trestart. In the second switch on, the short circuit is permanent and the device switches OFF after maximum limiting time, stays OFF for the blanking time regardless of the input pin condition and then stays OFF according to the IN pin low condition. The definitions of voltages and currents are in respect to Figure 14. The behavior of VDI also depends on RIN. 70 ID [ A ] 60 Protective Shut Down 50 40 30 Safe operation area 20 10 0 10 20 VDrain [ V ] Figure 17 Datasheet 30 Power_limitation.emf Typical Power limitation behavior IDS / VDS 21 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Protection Functions V IN Inrush Overload overload shut off Overload situation high Don’t care low ID t Ilim t lim tlim IDnom t IIN IINfault IINnom 0 t VDI high low t t res tart protection_behaviour.emf Figure 18 Short Circuit during On State, Typical Behavior for Ohmic Loads The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Figure 17. The test setup for short circuit characterization is shown in Figure 19. The BTS3256D is a low side switch. Therefore it can be assumed that the micro controller and device GND connection have a low impedance. All impedance in the short circuit path is merged in the short circuit resistance RSC and short circuit inductance LSC. RSC ID LSC Vcc VS Drain 5V BTS3256 IN Vb b Control circuit SRP GND RSR P GND short_circuit_schematic.emf Figure 19 Datasheet Test Setup for Short Circuit Characterization Test 22 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Protection Functions 8.4 Table 8 Electrical Characteristics - Protection Electrical Characteristics - Protection Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Thermal shut down junction TJSD temperature 150 1751) – °C – P_8.4.1 Thermal hysteresis ∆TJSD – 10 – K 1) P_8.4.2 VD(AZ) 40 44 – V ID = 10 mA; VS = 0.0 V; VIN = 0.0 V P_8.4.3 – 45 49 V ID = 8 A; VS = 0.0 V; VIN = 0.0 V Thermal Protection Over Voltage Protection Drain source clamp voltage Short Circuit Protection current limitation level ID(lim) 42 55 72 A ohmic load P_8.4.4 max. power switch OFF threshold Pmax 300 400 650 W – P_8.4.5 max. time before current limitation before shut OFF tlim 3.5 5 6.5 ms 2) P_8.4.6 reset delay time trestart 50 resistive load 70 100 ms – P_8.4.7 1) Not subject to production test, specified by design. 2) In case of inductive loads the device needs to increase the VDS voltage during current limitation. This can trigger the over Power protection switch off earlier as tlim. Datasheet 23 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Application Information 9 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 9.1 Dimensioning of serial Resistor at IN pin In order to use the digital feedback function of the device, there must be a serial resistor used between the IN pin and the driver (micro controller). To calculate this serial resistor on the input pin, three device conditions and of course the driver (micro controller) abilities need to be taken into account. Figure 20 shows the circuit used for reading out the digital status. V bb Microcontroller V CC V CC I DO DO VRIN RIN VS IIN BTS3256 IN/Fault DI V DO 20µA : 100µA VDI Fault information 1.0mA SRP : 3.0mA GND GND R S RP GND Fault_R1dim.emf Figure 20 Note: Circuitry to readout fault information This is a very simplified example of an application circuit. The function must be verified in the real application. Conditions to be meet by the circuitry: During normal operation VIN must be higher than VINH,min to switch ON. During fault condition the max. capability of the driver (micro controller) must not be exceeded and the logic low level at DI must be ensured by a voltage drop over the serial resistor RIN while the device fault current is flowing. Conditions in formulas: • µCoutput current,min > µCHIGH,max / RIN > IINFault_min with µCoutput current,min referring to the µC maximum output current capability with µCHIGH,max referring to the maximum high output voltage of the µC driving stage This condition is valid during normal operation mode Datasheet 24 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Application Information • VIN = µCHIGH,min - (RIN * IIN,max) > VINH,min with µCHIGH,min referring to the minimal high output voltage of the µC driving stage This condition is valid during normal operation mode • µCHIGH,max - (RIN * IIN-Fault,min) < µC(DI)L,max with µC(DI)L,max referring to the maximum logic low voltage of the µC input stage The maximumcurrent is either defined by the BTS3256D or the µC driving stage This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. For a typical 5V micro controller with output current capability in the 3 mA range, a resistor range from 7.5 kΩ down to 4.5 kΩ can be used. For a typical 3.3V micro controller a range from 4.6 kΩ to 2.5 kΩ is suitable. 9.2 • Further Application Information For further information you may contact http://www.infineon.com/hitfet Datasheet 25 Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Package Outlines 10 Package Outlines Figure 21 PG-TO-252-5-11 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 26 Dimensions in mm Rev. 1.1 2018-01-29 Smart Low Side Power Switch BTS3256D Revision History 11 Revision History Version Date Changes Rev. 1.1 2017-07-27 4.1.7 Footnote added “refer to Fig. 13” 4.2.1 Footnote added “refer to Fig. 19” 6.4.6 Standby supply current parameter added Figure 21. Package outline updated Rev. 1.0 2009-05-05 released Datasheet Datasheet 27 Rev. 1.1 2018-01-29 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-01-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference Doc_Number IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.