Data Sheet, Rev. 1.1, September 2011
HITFET - BTS3405G
Smart Low-Side Power Switch
Automotive Power
Smart Low-Side Power Switch
BTS3405G
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Assignment BTS3405G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.2.1
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.1.6
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
10
11
11
12
12
13
6
6.1
6.2
6.3
6.4
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
15
17
18
7
Package Outlines BTS3405G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
2
7
7
8
8
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
HITFET
1
BTS3405G
Overview
Features
•
•
•
•
•
•
•
•
•
•
Low input current
Short circuit and Overload protection
Current limitation
Input protection (ESD)
Thermal protection with auto restart
Compatible to standard Power MOSFET
Analog driving possible
Two channel concept saves PCB footprint
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-8-25
Description
The BTS3405G is a two channel low-side power switch in PG-DSO-8-25 package providing embedded protective
functions. The device consists of two separate monolithic IC. Each with one N-channel power MOSFET transistor
and additional protection circuitry.
Table 1
Product Summary
Drain Voltage
Input Voltage
Typical On-State Resistance at Tj = 25°C and Vin = 10V
Maximum On-State Resistance at Tj = 150°C and Vin = 10V
Nominal Load Current
Drain Current
Single Clamping Energy
VD
VIN(max)
RDS(ON,amb typ)
RDS(ON,hot max)
IDnom(min)
ID
EAS
42 V1)
10 V
0.7 Ω
1.9 Ω
350 mA
600 mA2)
65 mJ
1) Active clamped
2) Internally limited
Type
Package
Marking
BTS3405G
PG-DSO-8-25
BTS3405G
Data Sheet
3
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Overview
Protective Functions
•
•
•
•
Electrostatic discharge protection (ESD)
Active clamp over voltage protection
Thermal shutdown with auto restart
Short circuit protection
Fault Information
•
•
Thermal shutdown
Short to Battery and overload
Applications
•
•
•
•
Designed for driving Relays in Automotive Applications
All types of resistive, inductive and capacitive loads
Suitable for loads with peak currents
Replaces discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3405G offers ESD protection of each IN Pin in relation to the corresponding Source Pin.
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor in each of the two power MOSFET.
During thermal shutdown the device tries to sink an increased input current at the corresponding IN pin to feedback
the fault condition on this channel.
The BTS3405G has a thermal-auto-restart function, the regarding channel will turn on again after the measured
temperature has dropped down for the thermal hysteresis.
The over voltage protection is active during load-dump or inductive turn off conditions. The power MOSFET is
limiting the Drain - Source voltage to the defined clamping voltage. This function is available regardless of the input
pin state, means without voltage on the IN pins.
Data Sheet
4
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block DiagramTerms
2
Block Diagram
Drain 1
Gate
Driving
Unit
IN 1
Overvoltage
Protection
Overtemperature
Protection
Short
circuit
detection
ESD
Protection
Source 1
Drain2
Gate
Driving
Unit
IN 2
Overvoltage
Protection
Overtemperature
Protection
Short
circuit
detection
ESD
Protection
Source2
BlockDiagram_3405
Figure 1
Block Diagram
2.1
Terms
Figure 2 shows all external terms used in this data sheet.
Vbb
V bb
Rin1
ZL1
I IN1
IN1
VIN1
Drain1
BTS3405G
Rin2
VIN2
Drain2
I IN2
I D1
ZL2
I D2
V D1
IN2
Source2
Source1
VD2
IS2
IS 1
GND
Terms.emf
Figure 2
Data Sheet
Terms
5
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Pin ConfigurationPin Assignment BTS3405G
3
Pin Configuration
3.1
Pin Assignment BTS3405G
Source 1
1
8
Drain 1
IN1
2
7
Drain 1
Source 2
3
6
Drain 2
IN2
4
5
Drain 2
P-DSO-8.vsd
Figure 3
Pin Configuration PG-DSO-8-25
3.2
Pin Definitions and Functions
Pin
Symbol
Function
1
Source1
Ground connection for channel 1
2
IN1
Input / Fault feedback for channel 1
3
Source2
Ground connection for channel 2
4
IN2
Input / Fault feedback for channel 2
5, 6
Drain2
Load connection channel 2
7, 8
Drain1
Load connection channel 1
Data Sheet
6
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
General Product CharacteristicsAbsolute Maximum Ratings
4
General Product Characteristics
4.1
Absolute Maximum Ratings
All parameters apply for both channels accordingly.
Absolute Maximum Ratings 1)
Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified), all values valid for both channels
Pos.
Parameter
Symbol Limit Values Unit
Test Conditions
Min.
Max.
–
42
V
2)
-0.2
10
V
–
self limited
mA
-0.2 V < VIN < 10 V
-2
2
mA
–
600
mA
VIN < -0.2 V
or VIN > 10 V
3)
Tj = 25 °C
Voltages
4.1.1
Drain voltage
4.1.2
Input Voltage
4.1.3
Input Current
VD
VIN
IIN
4.1.4
4.1.5
Drain Current
ID
VIN = 0 V, ID = 10 mA
Energies
4.1.6
Unclamped single pulse inductive energy EAS
single pulse
0
65
mJ
4.1.7
Unclamped single pulse inductive energy
single pulse
–
30
mJ
4.1.8
Unclamped repetitive pulse inductive
energy 1×104 cycles
0
18
mJ
4.1.9
Unclamped repetitive pulse inductive
energy 1×106 cycles
–
13
mJ
4.1.10
Total Power Dissipation
Ptot
–
0.78
W
TJ
Tstg
-40
+150 °C
–
-55
+150 °C
–
VESD
-2
2
IN Pin
R = 1.5 k;
C = 100 pF;
TJ = 25 °C
EAR
ID = 350 mA;
Vbb = 28 V;
TJ(start) = 85 °C
ID = 250 mA;
Vbb = 28 V;
TJ(start) = 150 °C
ID = 200 mA;
Vbb = 13.5 V;
TJ(start) = 105 °C
ID = 170 mA;
Vbb = 13.5 V;
TJ(start) = 105 °C
4)
Ta = 85 °C
Temperatures
4.1.11
Operating temperature
4.1.12
Storage temperature
ESD Susceptibility
4.1.13
Electrostatic discharge voltage 5)
kV
1)
2)
3)
4)
Not subject to production test, specified by design.
Active clamped.
Internally limited.
Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried
planes). PCB is mounted vertical without blown air.
5) ESD susceptibility HBM according to EIA/JESD 22-A 114B, section 4.
Data Sheet
7
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
General Product CharacteristicsThermal Resistance
4.2
Pos.
Thermal Resistance
Parameter
Symbol
4.2.1
Junction to Soldering Point
4.2.2
Junction to Ambient
all channel ON
RthJC
RthJA
Limit Values
Unit
Conditions
Min.
Typ.
Max.
–
–
38
K/W
1) 2)
–
80
–
K/W
1) 2)
1) Not subject to production test, specified by design.
2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried
planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated in each channel on the DMOS.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2.1
Transient Thermal Impedance
90
75
Zth [
K/
W
]
ZthJA
60
45
ZthJC
30
15
0
10-5
10-4
10-3
10-2
10-1
tp [ s ]
Figure 4
Data Sheet
1
101
102
103
Zth_3405 .emf
Typical Transient Thermal Impedance single pulse, ZthJA and ZthJC
8
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
General Product CharacteristicsThermal Resistance
102
D = 0.5
101
D = 0.2
ZthJA [K/W]
D = 0.1
D = 0.05
D = 0.02
1
D = 0.01
10-1
10-6
Single pulse
10-5
10-4
10-3
10-2
10-1
tp [s]
Figure 5
1
101
102
103
pulse_BTS3405_25 .emf
Typical Transient Thermal Impedance ZthJA with different Duty cycles
ZthJA = f(tp) , D = tp/T, Ta = 25 °C
Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with
buried planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated in each
channel for single pulse on the DMOS
Data Sheet
9
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block Description and CharacteristicsInput and Power Stage
5
Block Description and Characteristics
5.1
Input and Power Stage
5.1.1
Input Circuit
Figure 6 shows the input circuit of the BTS3405G. The zener Diode protects the input circuit against ESD pulses.
The internal circuitry is supplied by the input PIN. During normal operation the Input is connected to the Gate of
the power MOSFET. During fault condition the device tries to sink the current IINlim in order to give the fault
information back to the driving circuit.
I INnom
Logic
I IN IN
Gate
Fault
condition
ZD
IINlim
Source
Figure 6
Input.emf
Input Circuit
2,00
V IN(th) [ V ]
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
-50
-25
0
25
50
75
100 125
150
T [°C]
Vinth.emf
Figure 7
Typical Input Threshold Voltage Vinth = f(TJ); ID = 50 μA, VD = VIN
0,7
0,6
ID [ A ]
0,5
0,4
0,3
0,2
0,1
0
0
1
2
3
4
5
VIN [ V ]
Transferchar.emf
Figure 8
Data Sheet
Typical Transfer Characteristic ID = f(VIN); VD = 12 V, TJstart = 25 °C
10
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block Description and CharacteristicsInput and Power Stage
5.1.2
Failure Feedback
During failure condition the BTS3405G tries to sink a increased input current IINlim.
5.1.3
Output On-State Resistance
The on-state resistance depends on the junction temperature TJ. Figure 9 shows this dependency for the typical
on-state resistance RDS(on).
1,5
RDS(on) [ Ω ]
1,3
1,1
Vin = 5V
0,9
0,7
Vin = 10V
0,5
0,3
-50
-25
0
25
50
75
100
125
150
T [ °C ]
rdson.emf
Figure 9
Data Sheet
Typical On-State Resistance, RDS(on) = f(TJ)
11
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block Description and CharacteristicsInput and Power Stage
5.1.4
Power Dissipation
The maximum allowed power dissipation in Figure 10 is calculated by RthJC and RthJA.
RthJC=38 K/W
1,00
Ptot / W
RthJA=80 K/W
0,10
0,01
-50
-25
0
25
50
75
100
125
150
T / °C
Ptot_3405.emf
Figure 10
Maximal Allowable Power Dissipation
5.1.5
Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on with a
dedicated slope which is optimized for low EMC emission. Figure 11 shows the timing definition.
IN [V]
5.0
0
t
VD
Vbb
90 %
toff
10 %
t
Switching.emf
ton
Figure 11
Data Sheet
Definition of Power Output Timing for Resistive Load
12
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block Description and CharacteristicsInput and Power Stage
5.1.6
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Input and Power Stage
Tj = -40 ⋅C to +150 ⋅C , all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Input
5.1.1 Nominal Input current
IINnom
–
10
30
μA
5.1.2 Input current protection mode
IINlim
–
100
150
μA
5.1.3 Input threshold voltage
VINTH
1.3
1.7
2.2
V
0.8
–
–
V
–
0.9
–
Ω
5.1.4
VD = 0 V;
VIN = 10 V
VIN = 10 V;
TJ = 150 °C
VD = VIN;
ID = 50 μA
TJ = 25°C
VD = VIN;
ID = 50 μA, 150 °C
Power Stage
5.1.5 On-State Resistance
RDS(on)
1)
TJ = 25 °C;
VIN = 5 V;
ID = 200mA
5.1.6
–
1.8
2.4
Ω
TJ = 150 °C;
VIN = 5 V;
Ω
1)
VIN = 10 V;
ID = 200mA
TJ = 150 °C;
VIN = 10 V;
ID = 200mA
ID = 200mA
5.1.7
–
5.1.10 Zero input voltage drain current
Data Sheet
–
–
1.4
1.9
Ω
IDnom
350
400
–
mA
IDSS
–
–
5
μA
–
2.5
6
μA
–
4
7
μA
5.1.8
5.1.9 Nominal load current for both channels ON
0.7
13
TJ = 25 °C;
1)
TJ < 150 °C;
TA = 105 °C2);
VIN = 5 V
VDS = 13.5 V;VIN = 0 V;
TJ = 150 °C
VDS = 32 V;VIN = 0 V;
TJ = -40 °C to 85 °C
VDS = 32 V;VIN = 0 V;
TJ = 150 °C
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Block Description and CharacteristicsInput and Power Stage
Electrical Characteristics: Input and Power Stage (cont’d)
Tj = -40 ⋅C to +150 ⋅C , all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Switching Vbb = 12 V, RL = 82 Ω
–
16
38
μs
5.1.12 Turn-off time
ton
toff
–
15
45
μs
5.1.13 Slew rate on
dVds/dton –
2.5
9.3
V/μs 50% - 30% Vbb;
RL = 82 Ω;
VIN = 0 V to 10 V;
Vbb = 12 V
5.1.14 Slew rate off
dVds/dtoff –
6.0
18.2 V/μs 30% - 50% Vbb;
RL = 82 Ω;
VIN = 10 V to 0 V;
Vbb = 12 V
VD
-1.0
-1.5
5.1.11 Turn-on time
VIN = 10 V to 90% ID
VIN = 0 V to 10% ID
Inverse Diode
5.1.15 Inverse Diode forward voltage
–
V
ID = -1 A;
VIN = 0 V
1) Not subject to production test, calculated by RthJA and RDS(on).
2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried
planes). PCB is mounted vertical without blown air.
Data Sheet
14
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Protection FunctionsThermal Protection
6
Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operation.
6.1
Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this
a temperature sensor located in the Power MOSFET is used.
The BTS3405G has a thermal auto-restart function. After the device has cooled down it will switch on again see
Figure 12.
Thermal shutdown
restart
IN
5V
0
t
TJ
TJSD
ΔTJSD
t
I IN
I INf
IIS
0
t
Thermal_fault_autorestart.emf
Figure 12
Error Signal via Input Current at Thermal Shutdown
6.2
Overvoltage Protection
When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery
potential, because the inductance intends to continue driving the current.
Drain
Source
OutputClamap.emf
Figure 13
Output Clamp
The BTS3405G is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain
level. See Figure 13 and Figure 14 for more details.
Data Sheet
15
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Protection FunctionsOvervoltage Protection
Turn off due to
over temperature or short circuit
IN
5V
0
t
ID
t
VD
V C lamp
V bb
t
InductiveLoad.emf
Figure 14
Switching an Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS3405G. This energy can be
calculated with following equation:
V out ( CL )
⎛
RL ⋅ IL ⎞
L
E = ( V bb + V out ( CL ) ) ⋅ -----------------------⋅ ln ⎜ 1 + -----------------------⎟ + I L ⋅ -----RL
R
V
⎝
L
out ( CL ) ⎠
(1)
Following equation simplifies under assumption of RL = 0
⎞
V bb
2 ⎛
E = 1
--- LI L ⋅ ⎜ 1 + -------------------------------------⎟
2
V out ( CL ) – V bb ⎠
⎝
Data Sheet
(2)
16
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Protection FunctionsShort Circuit Protection
6.3
Short Circuit Protection
The condition short circuit is an overload condition of the device. If the current reaches the value of Ilim the device
starts to limit the current. In the condition of current limitation the device heats up. If the thermal shutdown
temperature is reached the device turns off. Figure 15 shows this behavior. During the current limitation the input
current is above IINnom. During the time period tdlim, the current can be above Ilim.
Occurrence of Over current
or high ohmic Short circuit
Turn off due to over temperature
Restart after short circuit turn off
Restart into normal load condition
IN
5V
0
t
ID
V b b /Zsc
I lim
td lim
t
TJ
TJSD
ΔTJSD
t
I IN
I I N lim
IINn o m
0
t
Short_circuit.emf
Figure 15
Short Circuit Behavior of BTS3405G
As the device is a low side switch it can be assumed that the Source to Ground path has a neglectable low
impedance and resistance. Therefore all impedance and resistance in the load path during short circuit is merged
into Zsc.
Data Sheet
17
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Protection FunctionsCharacteristics
6.4
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Electrical Characteristics: Protection Functions
Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified), all values valid for both channels
Pos. Parameter
Symbol
Limit Values
Unit
Test Conditions
Min.
Typ. Max.
TJSD
ΔTJSD
150
1751) –
°C
–
–
10
–
K
1)
VClamp
42
–
55
V
VIN = 0 V;
ID = 10 mA;
Ilim
0.6
0.9
1.2
A
0.3
–
–
–
–
1.4
VIN = 10 V;VDS = 12 V;
tmeasure = 4 × tdlim
TJ = 25 °C1)
TJ = 150 °C
TJ = -40 °C 1)
–
–
50
μs
1)
Thermal Protection
6.4.1 Thermal shut down junction temperature
6.4.2 Thermal hysteresis
Overvoltage Protection
6.4.3 Drain clamp voltage
Current Limitation and Short Circuit Protection
6.4.4 Current limitation
6.4.5 Current limitation delay time
tdlim
1) Not subject to production test, specified by design.
Data Sheet
18
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Package Outlines BTS3405G
7
Package Outlines BTS3405G
0.1
2)
0.41+0.1
-0.06
0.2
8
5
1
4
5 -0.2
1)
M
B
0.19 +0.06
C
8 MAX.
1.27
4 -0.21)
1.75 MAX.
0.175 ±0.07
(1.45)
0.35 x 45˚
0.64 ±0.25
6 ±0.2
A B 8x
0.2
M
C 8x
A
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
Figure 16
PG-DSO-8-25 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
19
Dimensions in mm
Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
Revision History
8
Version
Revision History
Date
Changes
Rev. 1.1
2011-09-01
fixed a typo in EAR test conditions in chapter Max ratings
updated Feature list and rephrased Detailed Description
fixed a spelling error in 5.1.3 regarding “dependency”
Rev. 1.0
2008-09-25
released data sheet
Data Sheet
20
Rev. 1.1, 2011-09-01
Edition 2011-09-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
工商网监
湘ICP备2023018690号
