BTS3408GXUMA2

HITFET® BTS3408G Smart Low Side Power Switch Datasheet Rev. 1.4 Features • • • • • • • • • • • • • • • • Logic level input Compatible to 3V micro controllers ESD protection Thermal shutdown with auto restart Overload protection Short circuit protection Over voltage protection Open load detection (during Off) Current limitation Direct parallel control of the inputs FREEZE functionality for multiplexing General fault flag Very low standby quiescent current Switching frequencies up to 50kHz Green Product (RoHS compliant) AEC Qualified Application • • • • All kinds of resistive, inductive and capacitive loads in switching applications µC compatible power switch for 12 V, 24 V and 42 V applications Replaces electromechanical relays and discrete circuits Line, stepper motor, lamp and relay driver General Description The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving resistive, capacitive and inductive loads. The design is based on Infineons Smart Power Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same monolithic circuit. The BTS3408G is protected by embedded protection functions and designed for automotive and industrial applications. It is especially suited for driving stepper motors and lines. Type ® HITFET BTS3408G Datasheet Rev. 1.4 Ordering Code Package on request PG-DSO-8-36 1 2013-02-12 HITFET® BTS3408G Product Summary Parameter Symbol Value Unit Supply voltage VS VDS RDS(ON) ID(lim) ID(Nom) EAS 4.5 - 60 V 60 V 550 mΩ 1 A 0.55 A 800 mJ Continuous drain source voltage On-state resistance Current limitation Nominal output current (individual channel) Clamping energy VS Vbb BTS 3408 Logic Protection Protection and Diagnosis Control Open Drain Status Feedback Normal Function Over Temp Short Circuit Open Load @ OFF IN1 IN2 LOAD FAULT OUT1 Freeze functionality Output Control OUTPUT Stage OUT2 ENA GND Figure 1 Block Diagram 1 Figure 2 VS FAULT 8 2 IN1 OUT1 7 3 IN2 GND 6 4 ENA OUT2 5 Pin Configuration Datasheet Rev. 1.4 2 2013-02-12 HITFET® BTS3408G Pin Definitions and Functions Pin Symbol Function 1 FAULT General Fault Flag; see Table 2 for operation mode. 2 IN1 Input 1; input of channel 1; has an internal pull down; TTL/ CMOS compatible input. 3 IN2 Input 2; input of channel 2; has an internal pull down; TTL/ CMOS compatible input. 4 ENA Enable/Freeze; has an internal pull down; device is enabled when voltage is higher then 1.2 volts; if the voltage is below 1.7 volts the output is freezed, input signals will be ignored; if the voltage is above 2 volts input signals will be output ; see Table 1 for detailed information. 5 OUT2 Output 2; output of D-MOS stage 2. 6 GND Ground. 7 OUT1 Output 1; output of D-MOS stage 1. 8 VS Power supply. Datasheet Rev. 1.4 3 2013-02-12 HITFET® BTS3408G Circuit Description Logic Supply The logic is supplied with 4.5 up to 60 volt by the VS pin. If VS falls below max. 4.5 volts the logic is shut down and the output stages are switched off. Direct Inputs ENA The ENA/FREEZE input can be used to enable and/or to freeze the output control of the IC or to cut off the complete IC. By pulling the ENA input to low, i.e. applying a voltage VENAL , the IC is in disable mode. The power stages are switched off and the current consumption is reduced to IS(stby). By applying a voltage VENAFZ , the IC is in FREEZE mode. The output signals will remain in their former state. All input signals will be ignored. By pulling the input to high, the IC is in Enable mode. All input signals are output. The ENA - pin has an internal pull-down. IN1 / IN2 Each output is independently controlled via the respective input pin. The input pins are high active. If the common enable pin is high, the individual input signals are output. The input pins have an internal pull-down. Table 1 Functional Table VENA Mode IN1 IN2 IN1(-1) IN2(-1) OUT1 OUT2 Comment ≤0.8V Disable X 1) X 1) X 1) X 1) L L all outputs OFF L L L L former output state 1.2 .. 1.7V Freeze X 1) X 1) L H L H former output state 1.2 .. 1.7V Freeze X 1) 1) X 1) H L H L former output state 1.2 .. 1.7V Freeze X 1) X 1) H H H H former output state X 1) L L input is output X 1) 1.2 .. 1.7V Freeze X ≥2.0V Enable L X 1) L X 1) 1) ≥2.0V Enable L H X L H input is output ≥2.0V Enable H L X 1) X 1) H L input is output H 1) 1) H H input is output ≥2.0V 1) Enable H X X X = not relevant Datasheet Rev. 1.4 4 2013-02-12 HITFET® BTS3408G Power stages Each output is protected by embedded protection functions. In the event of an overload or short to supply, the current is internally limited. The current limit is set to ID(lim). If this operation leads to an overtemperature condition, a second protection level (about 165 °C) will turn the effected output into a PWM-mode (selective thermal shutdown with restart) to prevent critical chip temperatures. The temperature hysteresis is typically 10K. Zener clamping is implemented to limit voltages at the power transistors when inductive loads are switched off. Diagnostic The general FAULT pin is an open drain output. The FAULT pin is low active. It signals fault conditions of any of the two output stages. By doing so, single and/or dual fault conditions can be monitored. Single fault conditions can be assigned. Table 2 Diagnostic Table Operating Condition ENA INX OUTX FAULT Standby L X 1) OFF H Normal function H H ON Over temperature H H OFF Open load / short to ground H L OFF 1) X = not relevant 2) selective thermal shutdown for each channel at overtemperature H 2) L L Fault Distinction Open load / short to ground is recognized during OFF-state. Overtemperature as a result of an overload or short to battery can only arise during ON-state. If there is only one fault at a time, it is possible to distinguish which channel is affected with which fault. Datasheet Rev. 1.4 5 2013-02-12 HITFET® BTS3408G Absolute Maximum Ratings 1) Tj = -40°C to 150°C, unless otherwise specified Parameter Symbol Values Unit Remarks Supply voltage VS VDS VIN IIN VFault Tj Tstg Ptot ID(Nom) +4.5 .. +60 V Drain source voltage (OUT1, OUT2) Input voltage (IN1, IN2, ENA) Continuous input current VIN>7V FAULT output voltage Operating temperature range Storage temperature range Power dissipation (DC) 2) Nominal load current one channel active both channel active 2) – -0.3 .. +60 V – -0.3 … +7 V – 1 mA – -0.3 … +7 V – -40 … +150 °C -55 … +150 °C – 0.88 W Ta = 25°C A VDS≤0.5V, Tj≤150°C, TA=85°C, VIN=5V 0.55 0.45 Unclamped single pulse inductive energy EAS one channel active 800 mJ ID=0.7A, Tj(start)=25°C Electrostatic discharge voltage (Human VESD Body Model) according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF) 2000 V – ≤ 10 K/W – ≤ 185 ≤ 142 K/W – Thermal Resistance Junction soldering point Junction - ambient @ min. footprint Junction - ambient @ 6cm² cooling area 2) RthJS RthJA 1) Not subject to production test, specified by design. Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection. Datasheet Rev. 1.4 6 2013-02-12 HITFET® BTS3408G Electrical Characteristics VS = 4.5V to 18V; Tj = -40°C to 150°C; unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Power supply Supply voltage VS IS(ON) 4.5 – 60 V – 1.5 4 mA ENA=High, OUT1=OUT2=On – – 16 μA ENA=Low VDS(AZ) 60 IDSS – – 75 V ID = 1 mA 1 5 μA ENA=Low, IN=Low, VDS = 60 V Output pull down current IPD(OL) 50 100 200 μA ENA=High, IN=Low, VDS = 42 V On-state resistance RDS(ON) – – 480 800 550 1000 -VDS1, – -VDS2 Current limit ID(lim) 1 – Turn-on time IN=High to 90% ID: ton 0.8 1.1 Turn-off time IN=Low to 10% ID: toff Supply current in enable mode Supply current in standby mode 1) IS(stby) – Power outputs Drain source clamp voltage Output leakage current 2) Tj = 25 °C Tj = 150 °C Inverse diode forward voltage – mΩ ID = 0.2 A, VS = 5 V V ID = -0.2 A, IN, ENA = 0V (low) 1.5 2 A – 2 8 μs 2 8 μs RL= 22Ω, VBB=12V,VS=5V RL= 22Ω, VBB=12V,VS=5V Digital inputs (IN1, IN2, ENA) Input ’Low’ voltage IN1, IN2: ENA: ENA voltage for ’FREEZE’ functionality Datasheet Rev. 1.4 -0.3 – VINL VENAL -0.3 – VENAFZ 1.2 – 7 V – V – 0.8 0.8 1.7 2013-02-12 HITFET® BTS3408G Electrical Characteristics (cont’d) VS = 4.5V to 18V; Tj = -40°C to 150°C; unless otherwise specified Parameter Input ’High’ voltage IN1, IN2: ENA: Symbol Limit Values min. typ. Unit Test Conditions max. V – – – – Input voltage hysteresis 2.0 VINH VENAH 2.0 VINhys – 300 – Input pull down current IN1, IN2: ENA: IINPD 20 IENAPD 20 50 50 100 100 VFLTL – 0.4 – mV – μA – V IFLTL=1.6mA, Digital Output (FAULT) Output ’Low’ voltage – Diagnostic Functions Open load / short to ground detection voltage VDS(OL) 0.5*VS 0.7*VS 0.9*VS V Fault filter time for open load tfilter(OL) 30 100 200 μs VS=5V Thermal overload trip temperature Tjt 150 165 180 °C – Thermal hysteresis ΔTjt – 10 – Κ – mJ ID=0.7 A – Protection Functions 3) Unclamped single pulse inductive EAS energy one channel active,Tj(start)=25°C both channel active,Tj(start)=25°C one channel active,Tj(start)=150°C both channel active,Tj(start)=150°C 800 550 240 240 1) See also diagram 4 on page 11. 2) See also diagram 5 on page 11. 3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Not subject to production test, specified by design. Datasheet Rev. 1.4 8 2013-02-12 HITFET® BTS3408G Terms VS IS VS IFLT FAULT VFLT IIN1 ID1 IN1 VIN1 OUT1 IIN2 VDS1 IN2 ID2 VIN2 IENA Figure 3 OUT2 ENA VENA VBB VDS2 GND Input circuit (ESD protection) Figure 5 Application Circuit VBB uC Vcc ESD zener diodes are not designed for DC current. Figure 4 INT Inductive and over voltage output clamp LOAD Drain VAZ 3408 VS FAULT Px.1 IN1 Px.2 IN2 Py.1 OUT2 ENA GND OUT1 line GND VDS Power DMOS Source ID Datasheet Rev. 1.4 9 2013-02-12 HITFET® BTS3408G Timing diagrams Characteristics Figure 6 1. Max. allowable Power Dissipation Ptot = f(Tamb) Switching a resistive load ENA 1 INx P VDSx to t 6cm ² 0W ,8 m in . fo o tp rin t t 0.9*ID IDx 0 ,6 0.1*ID ton Figure 7 toff t 0 ,4 Switching an inductive load 0 ,2 ENA INx 0 -5 0 VDS(AZ) VDSx -2 5 0 25 50 75 1 0 0 1°C 25 150 T VBB am b 2. On-state Resistance RDS(ON) = f(Tj); ID = 0.2 A; VS = 5 V t IDx 1000 R ON 9 0Ω0 m t 800 Figure 8 Short circuit m a x. 700 ENA 600 INx 500 typ . 400 IDx 300 t ϑjx 200 thermal hysteresis 100 t 0 FAULT -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T Datasheet Rev. 1.4 10 j 2013-02-12 HITFET® BTS3408G 3. Typ. Short Circuit Current 5. Typ. Output leakage current ID(lim) = f(Tj) IDSS = f(Tj);VS = 18 V; VDS = 60 V 2 2 I D (lim ) I DSS typ . 1μ,6 A 1A,5 typ . 1 ,2 1 0 ,8 0 ,5 0 ,4 0 0 -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T j j 4. Typ. Supply current in Standby mode IS(stby) = f(Tj);VS = 5 V 10 I S (s tb y) μ 8A typ . 6 4 2 0 -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T Datasheet Rev. 1.4 j 11 2013-02-12 HITFET® BTS3408G Package Outline 0.1 2) 0.41+0.1 -0.06 0.2 8 5 1 4 5 -0.2 1) M B 0.19 +0.06 C 8 MAX. 1.27 1.75 MAX. 0.175 ±0.07 (1.45) 0.35 x 45˚ 4 -0.21) 0.64 ±0.25 6 ±0.2 A B 8x 0.2 M C 8x A Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area GPS01181 Figure 9 PG-DSO-8-36 (Plastic Green Dual Small Outline Package) products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green ubes, trays etc. are contained in our Device Datasheet Rev. 1.4 12 2013-02-12 HITFET® BTS3408G Revision History Version Date Changes Rev. 1.4 2013-02-12 minor updates in wording/spelling; updated table foot note of Maximum Ratings and Protection Functions - added: “not subject to production test..” updated reference of ESD standard; removed chapter “EMC characteristics”; updated test condition for parameter ton and toff; added parameter “Inverse diode forward voltage”; Rev. 1.3 2008-01-09 Changed package outline drawing, updated package name Rev. 1.2 2007-06-15 Released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list AEC Stress Test Qualification added to the feature list Package information updated to green Green explanation added removed order number Rev. 1.1 2005-10-10 Released production version Datasheet Rev. 1.4 13 2013-02-12 HITFET® BTS3408G Edition 2013-02-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Datasheet Rev. 1.4 14 2013-02-12