HITFET
Smart Low Side Power Switch
BTS3800SL
Small Protected Automotive Relay Driver
Single Channel, 800mΩ
Datasheet
Rev. 1.1, 2011-04-30
Automotive
HITFET - BTS3800SL
Smart low side power switch
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Assignment BTS3800SL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.2
Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Input Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6
6.1
6.2
6.3
Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
11
11
7
7.1
7.2
7.3
7.4
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
13
13
13
14
8
Package Outlines BTS3800SL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Datasheet
2
7
7
8
8
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
1
BTS3800SL
Overview
Features
•
•
•
•
•
•
•
•
Short circuit and over load protection
Thermal shutdown with latch behavior
ESD protection
Over voltage protection
Logic level input suitable for 5V and 3.3V
Small footprint automotive power package
Green Product (RoHS compliant)
AEC Qualified
PG-SCT595
Description
The BTS3800SL is a single channel Low Side power switch with embedded protective functions in PG-SCT595
package. The device is monolithically integrated with a N channel power MOSFET and additional protection
functions.
The BTS3800SL is especially designed as a protected relay driver in automotive and industrial applications.
Table 1
Product Summary
Drain voltage1)
41 V
Nominal load current
VDS
VIN
RDS(ON)
RDS(ON)
ID(nom)
Minimum Current threshold level
ID(OVL)
0.75 A
Single Clamping Energy
EAS
65 mJ
Maximum Input Voltage
Maximum On resistance at 150°C and 5V input voltage
Typical On-State resistance at 25°C and 5V input voltage
5.5 V
1.6 Ω
0.8 Ω
350 mA
1) Active clamped
Type
Package
Marking
BTS3800SL
PG-SCT595
38
Datasheet
3
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Overview
Protective Functions
•
•
•
•
•
Electrostatic discharge protection (ESD)
Active clamping over voltage protection
Thermal shutdown with latching behavior
Short circuit protection
Current threshold switch off
Applications
•
•
•
•
•
Designed for driving relays in automotive and industrial applications
Protected power switch for small loads
Protected line driver
Protected supply switch
Replacement of discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3800SL offers ESD protection on the IN Pin refering to the Source Pin (Ground).
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor which is placed monolitically in the
power stage.
The BTS3800SL has a thermal latch function. The device will turn off and stay off, even after the measured
temperature has dropped below the thermal hysteresis. After cooling down the device can be switched on again
by toggling the IN pin.
The over voltage protection is active during load dump or inductive turn off conditions.
In this conditions the power stage is limiting the Drain to Source voltage at VDS(AZ) and dissipating energy.
Datasheet
4
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Block Diagram
2
Block Diagram
Drain
Overvoltage
Protection
Gate
Driving
Unit
IN
Overtemperature
Protection
Short
circuit
detection
ESD
Protection
Source
Blockdiagram_3800.emf
Figure 1
Block Diagram of BTS3800SL
2.1
Terms
Figure 2 shows all external terms used in this data sheet.
Vbb
Vbb
ZL
R IN
ID
I IN
IN
Drain
VIN
VD
Source
I Sourc e
GND
Terms_3800.emf
Figure 2
Datasheet
Naming of electrical parameters
5
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment BTS3800SL
5
1
4
2
3
Pi n Confi g .emf
Figure 3
Pin Configuration PG-SCT595
3.2
Pin Definitions and Functions
Pin
Symbol
Function
1
Drain
Drain pin; Load connection for power DMOS
2,5
n.c.
not connected; Should be connected to ground for cooling
3
IN
Input pin; Digital input
4
Source
Source pin; Ground, Source of power DMOS
Datasheet
6
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol Limit Values Unit
Test Conditions
Min.
Max.
–
41
V
–
36
V
-0.3
5.5
V
-4
4
mA
5.5 V < VIN < 8.0 V
–
0.75
A
3)
ID = 350mA;
TJ(start) = 150 °C
ID = 350mA;
Vbb = 18 V;
TJ(start) = 85 °C
Voltages
4.1.1
Drain voltage
4.1.2
Drain voltage for short circuit protection
4.1.3
Input Voltage
4.1.4
Input Current
VDS
VDS(SC)
VIN
IIN
4.1.5
Maximum Drain Current
ID
2)
–
-0.3 V < VIN < 5.5 V
self limited
Energies
4.1.6
Unclamped single pulse inductive energy EAS
–
65
mJ
4.1.7
Unclamped repetitive pulse inductive
energy 1×104 cycles
EAR
–
14
mJ
4.1.8
Unclamped repetitive pulse inductive
energy 1×106 cycles
–
12
mJ
-40
+150 °C
–
-55
+150 °C
–
ID = 350mA;
Vbb = 18V;
TJ(start) = 85°C
Temperatures
4.1.9
Operating temperature
4.1.10
Storage temperature
TJ
TSTG
ESD Susceptibility
4.1.11
1)
2)
3)
4)
ESD Resistivity
kV
VESD
All pins
-4
4
Drain vs. Source
-8
8
HBM4)
Not subject to production test, specified by design.
Active clamped.
Current protection threshold see “Over Load Protection” on Page 13 for details.
ESD susceptibility, HBM according to EIA/JESD 22-A114.
Note: Stresses above the ones listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not designed for continuous repetitive operation.
Datasheet
7
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
General Product Characteristics
4.2
Pos.
Functional Range
Parameter
4.2.1
Input pin voltage (device ON)
4.2.1
Drain voltage
4.2.2
Input pin current consumption
Symbol
VIN
VD
IIN(ON)
Limit Values
Unit
Conditions
Min.
Max.
2.7
5.5
V
–
–
41
V
active clamped
–
0.5
mA
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
.
Pos.
Parameter
4.3.3
Junction to Pin 5
4.3.4
Junction to Ambient (2s2p)
Symbol
RthJpin
RthJA
Limit Values
Unit
Conditions
Min.
Typ.
Max.
–
–
27
K/W
1) 2)
–
110
–
K/W
1) 3)
1) Not subject to production test, specified by design
2) Specified RthJpin value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
Ta = 25 °C. Device is loaded with 0.5 W power.
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu).
Ta = 25 °C, Device is loaded with 0.5 W power.
Datasheet
8
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Input Stage
5
Input Stage
The following chapter describes the behavior and characteristic of the input pin.
5.1
Input Circuit
Figure 4 shows the input circuit of the BTS3800SL. The Zener diode protects the input circuit against ESD pulses.
The internal circuitry is powered via the input pin. During normal operation the input is connected to the gate of
the power MOSFET. The current handling capability of the driving circuit does not influence the device behavior
as long as the supply current IIN(nom) is supplied.
During PWM operation the recharging of the gate increases the current consumption to the level IIN(PWM).
I IS
I IN
IN
Logic
Gate
ZD
Source - Ground
Input .emf
Figure 4
Input Circuit
The current sink to ground ensures that the channel switches off in case of an open input pin.
The Zener diode protects the input circuit against ESD pulses.
5.2
Input Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Input Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Input
5.2.1 Supply current from Input Pin
IIN(ON)
–
0.25 0.5
mA
5.2.2 Supply current during PWM
IIN(PWM)
–
0.3
mA
0.6
VDS = 0 V;
VIN = 5.5 V
1)
VIN = 5.5 V with
20kHz PWM (50%DC)
5.2.3 Input ON threshold voltage
VIN(th)
–
2.3
2.7
V
VDS = 13.5 V;
ID = 350 mA
1) Not subject to production test
Datasheet
9
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Power stage
6
Power stage
6.1
Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage.
The following Figures show the dependencies for the typical on-state resistance RDS(on).
R DS(on) [ Ω ]
2,00
1,50
typ.
1,00
0,50
-50
-25
0
25
50
75
100
T [ °C ]
Figure 5
125
150
rdson_5V_3800.emf
BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5.5V
RDS(on) [ Ω ]
2,00
1,50
typ.
1,00
0,50
-50
Figure 6
Datasheet
-25
0
25
50
T [ °C ]
75
100
125
150
rdson_3V_3800.emf
BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3V
10
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Power stage
6.2
Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on.
Figure 7 shows the timing definition.
IN [V]
5.0
0
t
VD
V bb
90 %
80 %
20 %
10 %
t
toff
t on
dt off
dt on
Switching.emf
Figure 7
Definition of Power Output Timing for Resistive Load
6.3
Power Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Power Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
Power Stage
6.3.1 On-State Resistance
RDS(on)
–
0.8
–
Ω
1)
TJ = 25 °C;
VIN = 5.5 V
ID = 350 mA
–
1.4
1.6
Ω
TJ = 150 °C;
VIN = 5.5 V
–
1.0
–
Ω
ID
1)
–
1.7
2.0
Ω
ID
1)
= 350 mA
TJ = 25 °C;
VIN = 3 V
= 350 mA
TJ = 150 °C;
VIN = 3 V
6.3.2 Nominal load current
Datasheet
ID(nom)
11
350
520
–
mA
ID
2)
= 350 mA
TJ < 150 °C;
TA = 105 °C;
VIN = 5 V;
VDS = 0.5 V
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Power stage
Electrical Characteristics: Power Stage (cont’d)
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min. Typ. Max.
6.3.3 Zero input voltage drain leakage current
IDSS
–
2.5
–
–
6
μA
μA
0.2
0.5
2
VD = 36 V;VIN = 0 V;
VD = 13.5 V;VIN = 0 V;
TJ = 25 °C1)
TJ = 85 °C1)
TJ = 150 °C
Switching Vbb = 13.5 V, RL = 38 Ω, VIN = 5.0 V
6.3.4 Turn-on time
ton
–
3
5
μs
see Figure 7 for
definiton
6.3.5 Turn-off time
toff
–
3
5
μs
see Figure 7 for
definiton
6.3.6 Slew rate on
-dVds/dton –
6
12
dVD = 80 to 20% Vbb
see Figure 7
6.3.7 Slew rate off
dVds/dtoff –
12
22
dVD = 20 to 80% Vbb
see Figure 7
VSD
-1.0
-1.5
Inverse Diode
6.3.8 Inverse Diode forward voltage
–
V
ID =350 mA
VIN = 0 V
1) Not subject to production test, guaranteed by design.
2) Not subject to production test, calculated by RthJA and RDS(on).
Datasheet
12
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Protection Functions
7
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in this datasheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are not designed for continuous repetitive operation.
7.1
Over Load Protection
The BTS3800SL is protected in case of over load or short circuit of the load. After time tOFF(OVL), the device
switches off. It can be switched on by toggeling the IN pin. Please refer to Figure 8 for details.
IN [V]
5.0
0
ID [A]
t
tOFF(OVL)
ID(OVL )
ID(nom )
Protective switch
OFF
t
Reset latch
Figure 8
Shut down at over load
7.2
Over Temperature Protection
Restart into
normal condition
OverLoad.emf
A temperature sensor causes a overheated BTS3800SL to switch off to prevent destruction. It can be switched on
again by toggeling the IN pin.
7.3
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power transistor causes power dissipation. The reverse
current through the intrinsic body diode of the power transistor has to be limited by the connected load.
The over temperature and over load protection is not active during reverse polarity.
Datasheet
13
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Protection Functions
7.4
Protection Characteristics
Note: Characteristics show the deviation of parameter at given supply voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Electrical Characteristics: Protection
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Over Load Protection
7.4.1
Over load detection current
ID(OVL)
0.75
–
1.5
A
7.4.2
Over load shut-down delay time
tOFF(OVL)
5
–
15
μs
VIN = 5 V
Tj(SC)
150
170
200
°C
1)
VDS(AZ)
41
–
50
V
ID =10 mA
VIN = 0 V
Over Temperature Protection
7.4.3
Thermal shut down temperature
Over Voltage Protection
7.4.4
Output clamping voltage
1) Not subject to production test, specified by design.
Datasheet
14
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Datasheet
15
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Package Outlines BTS3800SL
Package Outlines BTS3800SL
2.9 ±0.2
(2.2)
(1.45)
(0.4) 1)
0.1 MAX.
1
+0.1
0.6 -0.05
2
4
3
1.6 ±0.1
(0.23) 1)
(0.13)
5
0.25 M B
1.1 MAX.
(0.3)
0.25 ±0.1
1.2 +0.1
-0.05
B
2.5 ±0.1
8
0.3 +0.1
-0.05
0.15 +0.1
-0.06
A
0.95
0.2
1.9
M
A
1) Contour of slot depends on profile of gull-wing lead form
SCT595-PO V05
Dimensions in mm
Figure 9
PG-SCT595 (Plastic Green Semiconductor Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on packages, please visit our website:
http://www.infineon.com/packages.
Datasheet
16
Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Revision History
9
Version
Rev. 1.1
Datasheet
Revision History
Date
2011-04-30
Changes
initial released data sheet
17
Rev. 1.1, 2011-04-30
Edition 2011-04-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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