BTS409L1-E3062A

PROFET® BTS409L1 Smart High-Side Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Features  Overload protection  Current limitation  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump)  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in ON-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (ESD) protection  Green Product (RoHS compliant)  AEC Qualified Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 43 V 5.0 ... 34 V 200 m 2.3 A 4 A PG-TO263-5-2 Application  C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  All types of resistive, inductive and capacitve loads  Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + V bb Voltage Overvoltage Current Gate source protection limit protection 3 V Logic Voltage sensor 2 IN ESD 4 Limit for unclampe d loads ind. Charge pump Level shifter Rectifier OUT Temperature sensor 5 Open load Short to Vbb detection Logic Load R ST PROFET GND  O GND 1 Signal GND 1) Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 1 2013-10-10 BTS409L1 Pin Symbol 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Data Sheet Function 2 2013-10-10 BTS409L1 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC  25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 2.3 A, ZL = 98 mH, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: Symbol Vbb Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD Values 43 34 Unit V V 60 V self-limited -40 ...+150 -55 ...+150 18 A °C 335 1.0 2.0 mJ kV -10 ... +16 2.0 5.0 V mA Values typ max -7 -75 39 Unit W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 Thermal Characteristics Parameter and Conditions Thermal resistance 2) 3) 4) 5) Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): min --- K/W Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 2013-10-10 BTS409L1 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C: RON Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection7) Tj =-40...+150°C: Ibb=40 mA Standby current (pin 3) VIN=0 Tj=-40...+25°C: Tj= 150°C: 6) 7) IL(ISO) IL(GNDhigh) -- 160 200 400 1.8 320 2.3 m -- -- -10 ton toff 80 80 200 200 400 400 s dV /dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- V V V Vbb(ucp) -- 5.6 34 5.0 5.0 7.0 7.0 Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) 34 33 -42 --0.5 47 43 ---- V V V V --- 10 12 23 28 A Ibb(off) A mA V At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Data Sheet 4 2013-10-10 BTS409L1 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C Protection Functions9) Initial peak short circuit current limit (pin 3 to 5) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 10) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Diagnostic Characteristics Open load detection current (on-condition) Values min typ max Unit IL(off) -- -- 12 A IGND -- 1.8 3.5 mA 5.5 4.5 3 9.5 7.5 5 13 11 7 A -- 4 -- A 41 150 --- 47 -10 -- 53 --32 V °C K V 10 10 --- 200 150 mA 2 3 4 V 4 10 30 k IL(SCp) IL(SCr) VON(CL) Tjt Tjt -Vbb Tj=-40 °C: IL (OL) Tj=25 ..150°C: Open load detection voltage11) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150°C RO 8) Add IST, if IST > 0, add IIN, if VIN>5.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 11) External pull up resistor required for open load detection in off state. 9) Data Sheet 5 2013-10-10 BTS409L1 Parameter and Conditions Symbol Values min typ max RI 2.5 3.5 6 k VIN(T+) VIN(T-)  VIN(T) IIN(off) 1.7 1.5 -1 --0.5 -- 3.5 --50 V V V A On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150°C IIN(on) 20 50 90 A Delay time for status with open load after switch off (see timing diagrams, page 11), Tj =-40..+150°C Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: td(ST OL4) 100 400 800 s -- 250 600 s 5.4 --- 6.1 --- -0.4 0.6 V at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback12) Input resistance see circuit page 7 Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150°C 12) td(ST) VST(high) VST(low) Unit If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 6 2013-10-10 BTS409L1 Truth Table Input- Output level level L H L H L H L H Normal operation Open load Short circuit to Vbb Overtemperature Undervoltage Overvoltage H H H (L14)) L L15) H (L16)) H L H H H H 13) H H H L H L H L H L = "Low" Level H = "High" Level Status L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms Status output +5V Ibb 3 I IN 2 IL V IN VST OUT PROFET I ST V R ST(ON) Vbb IN 4 5 ST GND GND 1 bb R IGND ST VON ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380  at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VOUT GND Input circuit (ESD protection) Inductive and overvoltage output clamp R IN I + V bb V ESD-ZD I I Z I V ON GND OUT ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND PROFET VON clamped to 47 V typ. 13) Power Transistor off, high impedance with external resistor between pin 3 and pin 5 15) An external short of output to V , in the off state, causes an internal current from output to ground. If R bb GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 16) Low resistance to V may be detected in ON-state by the no-load-detection bb 14) Data Sheet 7 2013-10-10 BTS409L1 GND disconnect Overvolt. and reverse batt. protection 3 + Vbb V R IN IN RI Z2 2 IN Vbb PROFET OUT Logic 4 R ST ST V V PROFET Z1 bb V IN V 5 ST GND 1 ST V GND GND R GND Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) . Signal GND Due to VGND >0, no VST = low signal available. VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. GND disconnect with GND pull up Open-load detection 3 ON-state diagnostic condition: VON < RON * IL(OL); IN high 2 IN Vbb PROFET + V bb 4 OUT 5 ST GND 1 VON ON V OUT Logic unit V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open load detection Vbb disconnect with energized inductive load 3 OFF-state diagnostic condition: VOUT > 3 V typ.; IN low high 2 IN Vbb PROFET R EXT 4 OFF 5 ST GND 1 V OUT V Logic unit OUT Open load detection R O bb Normal load current can be handled by the PROFET itself. Signal GND Data Sheet 8 2013-10-10 BTS409L1 Vbb disconnect with charged external inductive load high 2 L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0  S 3 IN Vbb L [mH] 10000 PROFET 4 Maximum allowable load inductance for a single switch off OUT 5 D ST GND 1000 1 V bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 100 Inductive Load switch-off energy dissipation E bb 10 E AS IN PROFET = ELoad Vbb 1 OUT 1 ST 2 3 4 5 EL GND ZL { IL [A] L RL ER Transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 10 Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is 1 EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt, with an approximate solution for RL  0 : EAS= IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) 2·RL bb |VOUT(CL)| D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 tp [s] Data Sheet 9 2013-10-10 BTS409L1 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN V bb t ST d(ST) *) V OUT V OUT ST open drain IL I L(OL) t t proper turn on under all conditions *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN IN ST IL V I L(SCp) IL(SCr) OUT I L t ST t Heating up may require several milliseconds, depending on external conditions Data Sheet 10 2013-10-10 BTS409L1 Figure 4a: Overtemperature: Reset if Tj