BTS441TGATMA1

BTS441TG Smart Power High-Side-Switch One Channel 20 mΩ Data sheet Rev. 1.21, 2012-12-06 Automotive Power Smart Power High-Side-Switch One Channel: 20 mΩ 1 BTS441TG Overview General Description • • • • N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology Providing embedded protective functions Green Product (RoHS compliant) AEC Qualified Application • • • • PG-TO263-5 µC compatible power switch 5 V, 12 V and 24 V DC applications All types of resistive, inductive and capatitive loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions • • • • • Very low standby current Optimized static electromagnetic compatibility (EMC) µC and CMOS compatible Fast demagnetization of inductive loads Stable behavior at undervoltage Protection Functions • • • • • • • • BTS441TG Short circuit protection Current limitation Overload protection Thermal Shutdown Overvoltage protection (including load dump) with external GND resistor Reverse battery protection with external GND-resistor Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection 3 V BB Control Circuit R IN Temperature Sensor 5 OUT 2 IN Type Package Marking BTS441TG PG-TO263-5 BTS441T Data sheet 2 GND Rev. 1.21, 2012-12-06 BTS441TG Overview Product Summary Maximum on-state resistance at Tj = 150 °C Operating voltage Nominal load current Current limitation RDS(ON) VSOP IL (nom) IL(lim) 20 mΩ 4.75 V … 41 V 21 A 65 A Product Information Device Name Status Package Pins ECO status BTS441TG Active PG-TO263-5 5 Green BTS441TG Discontinued P-TO263-5 5 Gray BTS441T Discontinued P-TO220-5 5 Gray BTS441T Discontinued PG-TO220-5 5 Green BTS441TS Discontinued P-TO220-5 5 Gray BTS441TS Discontinued PG-TO220-5 5 Green Data sheet 3 Rev. 1.21, 2012-12-06 BTS441TG                            '(       ' +     ,   '+ --  + '   #$    )* + '  .#/      PROFET                 % &                                       !    !"" #$%&'() *+, " #$                   Data sheet 4 Rev. 1.21, 2012-12-06 BTS441TG Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) ; TC≤25°C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (see diagram, p.8) IL(ISO) = 21 A, RL= 0 Ω: E4)AS=0.7J: Electrostatic discharge capability (ESD) IN: (Human Body Model) Out to all other pins shorted: Symbol Vbb Vbb 43 34 Unit V V 60 V IL Tj Tstg self-limited -40 ...+150 -55 ...+150 A °C Ptot 125 W ZL VESD 2.1 1.0 8.0 mH kV -10 ... +16 ±2.0 V mA ≤1 ≤ 75 K/W VLoad dump3) Values acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF VIN IIN Input voltage (DC) Current through input pin (DC) see internal circuit diagrams page 7 Thermal resistance 1) 2) 3) 4) 5) chip - case: junction - ambient (free air): SMD version, device on pcb5): RthJC RthJA ≤ 33 Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb connection. PCB is vertical without blown air. Data sheet 5 Rev. 1.21, 2012-12-06 BTS441TG Electrical Characteristics Parameter and Conditions Symbol at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Vbb (pin3) to OUT (pin5)); IL = 2 A Vbb≥7V: Tj=25 °C: RON Tj=150 °C: -- 15 28 20 37 mΩ 17 21 -- A -- -- 2 mA 40 40 90 110 200 250 μs dV /dton 0.1 -- 1 V/μs -dV/dtoff 0.1 -- 1 V/μs 4.75 4.75 4.75 5.0 41 43 ----- -----47 5 --1.5 41 43 43 43 -52 10 10 25 10 V μA -- 2 4 mA see diagram page 9 Nominal load current (pin 3 to 5) ‘ISO 10483-1, 6.7:VON=0.5V, TC=85°C IL(ISO) Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0, IL(GNDhigh) see diagram page 7 Turn-on time IN Turn-off time IN RL = 12 Ω, Slew rate on 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω, to 90% VOUT: ton to 10% VOUT: toff Operating Parameters Operating voltage Tj =-40°C Vbb(on) Tj =+25°C Tj =+105°C6) Tj =+150°C Overvoltage protection7) Tj =-40°C: Vbb(AZ) I bb = 40 mA Tj =+25...+150°C: Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) Tj=+105°C6): VIN=0 see diagram page 9 Tj=+150°C: IL(off) Off-State output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)9), VIN=5 V, IGND 6) 7) 8) 9) V μA not subject to production test, specified by design see also VON(CL) in table of protection functions and circuit diagram page 7 Measured with load, typ. 40 µA without load. Add IIN, if VIN>5.5 V Data sheet 6 Rev. 1.21, 2012-12-06 BTS441TG  Parameter and Conditions Symbol at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Protection Functions10) Current limit (pin 3 to 5) (see timing diagrams, page 9) Repetitive short circuit current limit Tj = Tjt (see timing diagrams, page 10) Thermal shutdown time11)12) Values min typ max Unit IL(lim) Tj =-40°C: Tj =25°C: Tj =+150°C: IL(SCr) --40 -- -65 -55 85 ---- A A Tj,start =25°C: Toff(SC) -- 14 -- ms 41 43 150 --- -47 -10 -- -52 --32 V °C K V -- 540 -- mV (see timing diagram on page 10) ;Tj =-40°C: Tj=25..150°C: VON(CL) Thermal overload trip temperature Tjt Thermal hysteresis ΔTjt Reverse battery (pin 3 to 1) 13) -Vbb -VON(rev) Reverse battery voltage drop (VOUT > Vbb) IL = -2A Tj =+150°C: Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 40 mA 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) not subject to production test, specified by design 12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for V bb connection. PCB is vertical without blown air. 13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7). Data sheet 7 Rev. 1.21, 2012-12-06 BTS441TG  Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Values min typ max Input14) Input resistance Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2) 2.5 1.2 0.8 -1 4.5 14) Symbol RI VIN(T+) VIN(T-) Δ VIN(T) VIN = 0.4 V: IIN(off) VIN = 5 V: IIN(on) see circuit page 7 3.8 --0.3 -12 6.5 2.2 --15 24 Unit kΩ V V V μA μA If a ground resistor RGND is used, add the voltage drop across this resistor. Data sheet 8 Rev. 1.21, 2012-12-06 BTS441TG Overvolt. and reverse batt. protection Terms  ,      0  -.    .  +      0  #$ . #    " #$   30#4) 2  #$ 0  *   0 0 .  .  VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Input circuit (ESD protection)  2 0  GND disconnect )*12       The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.  Inductive and overvoltage output clamp ,          2  # #$ -. Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . #$  30#4) GND disconnect with GND pull up VON clamped to 47 V typ.    -. #$        Any kind of load. If VGND > VIN - VIN(T+) device stays off Data sheet 9 Rev. 1.21, 2012-12-06 BTS441TG Vbb disconnect with charged inductive load Inductive load switch-off energy dissipation )  ) /*     -. ).   #$   #$ -. .   2.  For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. ^ ). )0 0 . Energy stored in load inductance: EL = 1/2·L·I L 2 While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb (1+ |V IL·RL OUT(CL)| ) Maximum allowable load inductance for a single switch off  Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH] 555 55 5  5 5 " 5 " 5 " 5 " IL [A] Data sheet 10 Rev. 1.21, 2012-12-06 BTS441TG Typ. on-state resistance  ; IL = 2 A, IN = high RON [mΩ] 5 89"5:! " 5 " 5 ":! " 15:! 5 " "67 5 5 Vbb [V] Typ. standby current ; Vbb = 9...34 V, IN1,2 = low Ibb(off) [μA] 5 " 5 " 5 1"5 5 "5 55 "5 55 Tj [°C] Data sheet 11 Rev. 1.21, 2012-12-06 BTS441TG Figure 2b: Switching a lamp, Timing diagrams  Figure 1a: Vbb turn on:   #$    .    #$  Figure 3a: Short circuit shut down by overtemperature, reset by cooling proper turn on under all conditions  =+      Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: .    #$ 75;   on