BTS50015-1TMA
Smart High-Side Power Switch
Data Sheet
Rev. 1.3, 2014-07-21
Automotive Power
BTS50015-1TMA
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
3.3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
4.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
5.1
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.2
5.2.1
5.2.2
5.3
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.3.6
5.3.6.1
5.3.6.2
5.3.7
5.4
5.4.1
5.4.2
5.4.3
5.4.3.1
5.4.3.2
5.4.3.3
5.4.3.4
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching a Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching an Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PWM Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection during Loss of Load or Loss of VS Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Undervoltage Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Activation of the Switch into Short Circuit (Short circuit Type 1) . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Appearance when the Device is already ON (Short circuit Type 2) . . . . . . . . . . . .
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Different Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal Variation and calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Over Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6.1
6.2
Electrical characteristics BTS50015-1TMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8
8.1
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Data Sheet
2
6
6
6
7
13
13
13
13
14
16
16
17
17
17
18
18
19
20
20
21
22
22
22
22
24
24
24
25
25
27
27
27
Rev. 1.3, 2014-07-21
Smart High-Side Power Switch
1
BTS50015-1TMA
Overview
Application
•
•
•
•
•
All types of resistive and capacitive loads
Suitable for inductive loads in conjunction with an effective, peripheral free
wheeling circuit
Replaces electromechanical relays and fuses
Most suitable for applications with high current loads, such as heating
system, main switch for power distribution, start-stop power supply switch
PWM application with low frequencies
PG-TO220-7-232
Features
•
•
•
•
•
•
•
•
•
•
•
•
One channel device
Low Stand-by current
Wide input voltage range (can be driven by logic levels 3.3V and 5V as well as directly by VS)
Electrostatic discharge protection (ESD)
Optimized Electromagnetic Compatibility (EMC)
Logic ground independent from load ground
Very low leakage current on OUT pin
Compatible to cranking pulse requirement (test pulse 4 of ISO7637 and cold start pulse in LV124)
Embedded diagnostic functions
Embedded protection functions
Green Product (RoHS compliant)
AEC Qualified
Description
The BTS50015-1TMA is a 1.5 mΩ single channel Smart High-Side Power Switch, embedded in a PG-TO-220-7232 package, providing protective functions and diagnosis. It contains Infineon® Reversave. The power transistor
is built by a N-channel power MOSFET with charge pump. It is specially designed to drive high current loads up
to 80A, for applications like switched battery couplings, power distribution switches, heaters, glow plugs, in the
harsh automotive environment.
Type
Package
Marking
BTS50015-1TMA
PG-TO-220-7-232
S50015A
Data Sheet
3
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Overview
Table 1
Product Summary
Parameter
Symbol
Values
Operating voltage range
VS(OP)
VS (DYN)
8 V … 18 V
3 mΩ
Minimum nominal load current
RDS(ON)
IL (nom)
Typical current sense differential ratio
dkILIS
51500
Minimum short circuit current threshold
IL (OVL)
IS (OFF)
135 A
Extended supply voltage contain dynamic
undervoltage capability
Maximum on-state resistance at Tj = 150 °C
Maximum stand-by current for the whole device
with load at TA=TJ= 85°C
Maximum reverse battery voltage at TA = 25°C for -VS(REV)
2 min
3.2 V … 28 V
33 A
18 μA
16 V
Embedded Diagnostic Functions
•
•
•
Proportional load current sense
Short circuit / Overtemperature detection
Latched status signal after short circuit or overtemperature detection
Embedded Protection Functions
•
•
•
•
•
•
•
Infineon® Reversave: Reverse battery protection by self turn ON of power MOSFET
Infineon® Inversave: Inverse operation robustness capability
Secure load turn-OFF while device loss of GND connection
Overtemperature protection with latch
Short circuit protection with latch
Overvoltage protection with external components
Enhanced short circuit operation
Data Sheet
4
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Block Diagram
2
Block Diagram
R VS
voltage sensor
internal
power
supply
ESD
protection
Overvoltage
clamp
over
temperature
driver
logic
IN
VS
gate control
&
charge pump
over current
switch OFF
load current sense
OUT
IS
GND
Figure 1
Data Sheet
Blockdiagram
Block Diagram for the BTS50015-1TMA
5
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
2
1
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
4
3
6
5
7
Pin
Symbol
Function
1
GND
GrouND; Ground connection
2
IN
INput; Input signal for channel activation. HIGH active
3
IS
Sense; Provides signal for diagnosis
VS
1)
Supply Voltage; Battery voltage
OUT
2)
OUTput; Protected high side power output
4, Cooling tab
5, 6, 7
1) When cooling tab is not connected to VS and the whole current is only flowing via pin 4, additional 0.8mΩ resistance must
be added to RDS(ON)
2) All output pins are internally connected and they also have to be connected together on the PCB. Not shorting all outputs
on PCB will considerably increase the ON-state resistance and decrease the current sense / overcurrent tripping accuracy.
PCB traces have to be designed to withstand the maximum current.
Data Sheet
6
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this datasheet, with associated convention for positive values.
IS
VS
VS
IIN
IN
VIN
VDS
IOUT
OUT
Vb,IS
IIS
IS
V OUT
GND
VIS
IGND
Figure 3
Data Sheet
Voltage and Current Definition
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BTS50015-1TMA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
Tj = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
V
–
4.1.1
2)
Min.
Typ.
Max.
VS
-VS(REV)
-0.3
–
28
0
–
16
V
t < 2 min
TA = 25°C
RL ≥ 0.5Ω
4.1.2
VS(LD)
–
–
45
V
3)
4.1.5
Supply voltage for short circuit
protection
VS(SC)
5
–
20
Short circuit is permanent: IN pin
toggles short circuit (SC type 1)
nRSC1
–
–
100k
–
(Grade D)
5)
4.1.4
IGND
-15
–6)
–
–
107)
15
mA
–
t ≤ 2 min
4.1.6
VIN
IIN
-0.3
–
VS
V
–
4.1.7
-5
-5
–
–
5
506)
mA
–
t ≤ 2 min
4.1.8
ffault
–
–
1
Hz
–
4.1.9
VIS
IIS
-0.3
–
VS
V
–
4.1.10
mA
–
t ≤ 2 min
4.1.11
Supply Voltages
Supply Voltage
Reverse polarity voltage
Supply voltage for load dump
protection
RI = 2Ω
RL = 2.2Ω
RIS = 1kΩ
RIN = 4.7kΩ
Short circuit capability
V
4)
RECU = 20mΩ 4.1.3
LECU = 1μH
Rcable = 6mΩ/m
Lcable = 1μH/m
l = 0 to 5m
R, C as shown in
Figure 51
See Chapter 5.3
GND pin
Current through ground pin
Input Pin
Voltage at IN pin
Current through IN pin
Maximum retry cycle rate in fault
condition
Sense Pin
Voltage at IS pin
Current through IS pin
Data Sheet
-15
–6)
–
–
8
10
15
7)
Rev. 1.3, 2014-07-21
BTS50015-1TMA
General Product Characteristics
Table 2
Absolute Maximum Ratings (cont’d)1)
Tj = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Number
Power Stage
Average power dissipation
PTOT
–
–
200
W
TC = -40°C to
150°C
4.1.15
Voltage at OUT Pin
VOUT
-64
–
–
V
–
4.1.21
TJ
ΔTJ
-40
–
150
°C
–
4.1.16
–
–
60
K
See Chapter 5.3 4.1.17
TSTG
-55
–
150
°C
–
VESD
VESD
-2
–
2
kV
HBM8)
4.1.19
kV
8)
4.1.20
Temperatures
Junction Temperature
Dynamic temperature increase
while switching
Storage Temperature
4.1.18
ESD Susceptibility
ESD susceptibility (all pins)
ESD susceptibility OUT Pin vs.
GND / VS
-4
–
4
HBM
1)
2)
3)
4)
5)
Not subject to production test, specified by design.
The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection.
VS(LD) is setup without DUT connected to the generator per ISO 7637-1.
In accordance to AEC Q100-012
In accordance to AEC Q100-012. Test aborted after 100,000 cycles. Short circuit conditions deviating from AEC Q100-012
may influence the specified short circuit cycle number in the datasheet.
6) The total reverse current (sum of IGND, IIS and -IIN) is limited by -VS(REV)_max and RVS.
7) TC ≤ 125°C
8) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
9
Rev. 1.3, 2014-07-21
BTS50015-1TMA
General Product Characteristics
250
200
IL,max [A]
150
100
50
0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tpulse [sec]
Figure 4
Maximum Single Pulse Current vs. Pulse Time, TJ ≤ 150°C, Tamb = 85°C
Above diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
Data Sheet
10
Rev. 1.3, 2014-07-21
BTS50015-1TMA
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range
Parameter
Symbol
VS(OP)
Extended operating voltage VS(OP_EXT)
Nominal operating voltage
Values
Min.
Typ.
Max.
8
–
18
5.3
–
28
Unit
Note /
Test Condition
Number
V
–
4.2.1
V
1)
VIN ≥ 2.2V
IL ≤ IL(NOM)
TJ ≤ 25°C
4.2.2
Parameter
deviations possible
5.5
–
28
V
VIN ≥ 2.2V
IL ≤ IL(NOM)
TJ = 150°C
1)
Parameter
deviations possible
Extended operating voltage
contain short dynamic
undervoltage capability
VS(DYN)
3.22)
–
28
V
1)
Undervoltage turn OFF
voltage
VS(UV_OFF)
–
–
4.5
V
1)
acc. to ISO7637
VIN ≥ 2.2V
RL = 270Ω
VS decreasing
4.2.3
4.2.4
See Figure 19
1)
Undervoltage shutdown
hysteresis
VS(UV)_HYS –
500
Slewrate at OUT
|dVDS/dt|
–
–
101)
V/μs
|VDS| < 3V
4.2.7
See Chapter 5.1.4
Drain to source voltage in
OFF condition
VDS_OFF
–
–
28
V
1)
–
mV
RL = 270Ω
4.2.6
See Figure 19
VIN ≤ 0.8V
4.2.8
1) Not subject to production test. Specified by design
2) TA = 25°C; RL = 0.5Ω; pulse duration 6ms; cranking capability is depending on load and must be verified under application
conditions
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
Data Sheet
11
Rev. 1.3, 2014-07-21
BTS50015-1TMA
General Product Characteristics
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Table 4
Thermal Resistance
Parameter
Symbol
Junction to Case
Junction to Ambient
Values
RthJC
RthJA
Min.
Typ.
Max.
–
–
0.5
–
110
–
Unit
Note /
Test Condition
Number
K/W
1)
4.3.1
K/W
1)2)
4.3.2
1) Not subject to production test, specified by design.
2)Specified RthJA value is according to JEDEC JESD51 at natural convection on FR4 1s0p board; The product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with pin tracks only.TA = 25°C. Device is
dissipating 1W power.
Figure 5 is showing the typical thermal impedance (junction to ambient and junction to case) of BTS50015-1TMA
mounted according to JEDEC on FR4 1s0p board at natural convection
100
Zthjc
Zthja
Zth [K/W]
10
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Time [s]
Figure 5
Data Sheet
Typical Transient Thermal Impedance Zth(JA)=f(time) and Zth(JC)=f(time)
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Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5
Functional Description
5.1
Power Stage
The power stage is built by a N-channel power MOSFET (DMOS) with charge pump.
5.1.1
Output ON-State Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 31
shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 5.3.5.
A HIGH signal (see Chapter 5.2) at the input pin causes the power DMOS to switch ON with a dedicated slope,
which is optimized in terms of EMC emission.
5.1.2
Switching a Resistive Load
Figure 6 shows the typical timing when switching a resistive load. The power stage has a defined switching
behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.
90% VS
∆V/∆tON
VOUT
VOUT
IOUT
I OUT
∆V/∆t OFF
50% VS
25% VS
10% VS
Figure 6
tOFF_delay
t ON_delay
tON
VIN
VIN
t OFF
Switching a Resistive Load:Timing
The connection to the load as well as the load itself (if not purely resistive) bring an inductive component. For that
reason the drain to source voltage of the BTS50015-1TMA during switch off can differ compared to the pure
resistive load condition (see Figure 7). It must be assured that under these conditions the drain to source voltage
does not exceed the VDS(CL)min.
If VDS(CL)min is exceeded, a free wheeling path should be implemented following the recommendation provided in
the next chapter.
Data Sheet
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Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
V DS
VDS
VDS( CL)
VDS(CL)
t
t
IL
IL
t
t
Resistive load with wire
inductance
Pure resistive load
Figure 7
Effect of the wire inductance
5.1.3
Switching an Inductive Load
When switching OFF inductive loads with high side switches, the voltage VOUT is driven below ground potential,
due to the fact that the inductance intends to continue driving the current. To prevent the destruction of the device
due to high voltages, the device implements an overvoltage protection, which clamps the voltage between VS and
VOUT at VDS(CL) (see Figure 8).
Nevertheless it is not recommended to operate the device repetitively under this condition. Therefore, when driving
inductive loads, a free wheeling diode must be always placed.
VS
RVS
Overvoltage
clamp
IN
VDS
LOGIC
IL
VBAT
OUT
GND
VIN
Figure 8
Data Sheet
L, RL
VOUT
Overvoltage Clamp
14
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
VIN
VIN
t
t
VOUT
VOUT
VS
VS
t
t
VS -V DS(CL)
VS -VDS(CL)
IL
IL
t
t
Without free wheeling diode
Figure 9
With free wheeling diode
Switching an Inductance with or without free wheeling diode
It is important to verify the effectiveness of the freewheeling solution (see Figure 9), which means the selection
of the proper diode and of an appropriate free wheeling path. With regard to the choice of the free wheeling diode,
low threshold and fast response are key parameter to achieve an effective result.
Moreover the diode should be placed in order to have the shortest wire connection with the load (see Figure 10).
BTS50015 -1TMA
Free Wheeling Diode
Inductive
Load
Not optimized free wheeling path
Inductive
Load
Recommended free wheeling path
BTS50015 -1TMA
Free Wheeling Diode
Figure 10
Data Sheet
Optimization of the free wheeling path
15
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.1.4
Inverse Current Capability
In case of inverse current, meaning a voltage VOUT(INV) at the output higher than the supply voltage VS, a current
IL(INV) will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 11). In case
the IN pin is HIGH, the power DMOS is already activated and keeps ON. In case, the input goes from “L” to “H”,
the DMOS will be activated. Under inverse condition, the device is not overtemperature / overload protected. The
IS pin is high impedance. Due to the limited speed of INV comparator, the output voltage slope needs to be limited.
VBAT
VS
Gate
driver
VOUT (INV)
I L(INV)
INV OL
Comp.
comp.
OUT
GND
Figure 11
VOUT
Inverse Current Circuitry
(a) Inverse spike during ON -mode
for short times (< tp,INV ,noFAULT)
VOUT
VS
VOUT
VS
VS
t
t
IIS
(c) Inverse spike during ON -mode with short
circuit after leaving Inverse mode
(b) Inverse spike during ON -mode
for times > tp,INV ,noFAULT
t
> t p, INV ,noFAULT
< t p, INV ,noFAULT
IIS
tOFF (trip )
IIS
IIS (fault )
IIS (fault )
tsIS (ON)_J
t p, noINV, FAULT
tpIS (FAULT )
t
t
t
Internal Fault -flag set
Figure 12
Inverse Behavior - Timing Diagram
5.1.5
PWM Switching
For PWM switching application, a tIN(RESETDELAY) parameter should be respected by defining the maximum PWM
frequency (see Figure 22). The average power over time must be below the specified value (see paramater
4.1.15) and is defined as (see Figure 13):
PTOT = (switching_ON_energy + switching_OFF_energy + IL2 * RDS(ON) * tDC) / period
For system with PWM switching, the maximum retry cycle (ffault) under fault condition should not be exceeded.
Data Sheet
16
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
VIN
VIN_H
V IN_L
t
P
PTOT
t
tDC
Figure 13
Switching in PWM
5.2
Input Pins
5.2.1
Input Circuitry
The input circuitry is compatible with 3.3V and 5V microcontrollers or can be directly driven by VS. The concept of
the input pin is to react to voltage threshold. With the Schmitt trigger, the output is either ON or OFF. Figure 14
shows the electrical equivalent input circuitry.
RVS
VS
IN
IIN
GND
Figure 14
Input Pin Circuitry
5.2.2
Input Pin Voltage
The IN uses a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set by the
threshold VIN(L) Max and VIN(H) Min. The exact value where ON and OFF take place depends on the process, as
well as the temperature. To avoid cross talk and parasitic turn ON and OFF, an hysteresis is implemented. This
ensures immunity to noise.
Data Sheet
17
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.3
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent the
destruction of the IC from fault conditions described in the datasheet. Fault conditions are considered as “outside”
normal operating range. Protection functions are designed neither for continuous nor for repetitive operation.
Figure 15 describes the typical functionality of the diagnosis and protection block.
VS
V DS
ESD
IN protection
current
sense
VS
R VS
V S(int)
2V
&
0
Driver
IIS (fault )
IS
1
Vb,IS
Overcurrent
1
IL
0
(IL/dkILIS ) ± IIS 0
V IS
tIN(RESET
IIS
RIS
OUT
DELAY)
&
If VOUT
< V S(int ) - 3V:
IL>ICL
≥1
&
ϑj> ϑjT
R
Q
S
Q
FAULT
30mV
driver logic
inverse comparator
GND
Figure 15
Diagram of Diagnosis & Protection Block
5.3.1
Loss of Ground Protection
In case of loss of module or device ground, where the load remains connected to ground, the device protects itself
by automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on
IN pin. It is recommended to use input resistors between the microcontroller and the BTS50015-1TMA to ensure
switching OFF of channel. In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the
DMOS. Figure 16 sketches the situation.
Vbat
VIN
IN
Z(AZ)GND
Z(AZ)I S
VS
OUT
Logic
RIN
Z(ESD-L)
Z(ESD-H)
RVS
IS
GND
RIS
Figure 16
Data Sheet
Loss of Ground Protection with External Components
18
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.3.2
Protection during Loss of Load or Loss of VS Condition
In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is
recommended to use a Z-diode, a varistor or VS clamping power switches with connected loads in parallel. The
voltage must be limited according to the minimum value of the parameter 6.1.33 indicated in Table 6.
In case of loss of VS connection, the inductance of the wire and/or of the load should be taken into account and
should be demagnetized by providing a proper current path. It is recommended to protect the device using a zener
diode together with a(VZ1 + VD1 < 16V), as shown in Figure 17.
For a proper restart of the device after loss of VS, the input voltage must be applied delayed to the supply voltage.
This can be realized by an capacitor between IN and GND (see Figure 51).
For higher clamp voltages, currents through all pins have to be limited according to the maximum ratings. Please
see Figure 17 and Figure 18 for details.
ext. components acc.
to either (A) or (B)
required, not both
VBAT
(A)
RVS
Logic
D1
VS
(B)
OUT
Z1
IN
IS
GND
R IN
R/L cable
D1
R IS
Load
Z1
VIN
Figure 17
Loss of VS
VBAT
L/R cable
VS
Logic
RVS
Z2
OUT
IN
RIN
IS
GND
RIS
Load
V IN
Figure 18
Data Sheet
R/L cable
Loss of Load
19
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.3.3
Undervoltage Behavior
If the supply voltage is in the area below VS(UV_OFF), the device is OFF (turns OFF). As soon as the supply voltage
is above VS(OP_EXT)_min, the device will switch ON again. Figure 19 sketches the undervoltage behavior.
VOUT
VIN ≥ 2.2V
VS
VS(UV_OFF)
Figure 19
Undervoltage Behavior
5.3.4
Overvoltage Protection
VS(OP_EXT)_min
In case VS(SC)_max < VS < VDS(CL) , the device will switch ON/OFF as in nominal voltage range. Parameters may
deviate from the specified limits and the lifetime is reduced.
The BTS50015-1TMA provides an overvoltage clamp functionality, which suppresses non nominal overvoltage
transients by actively clamping the voltage across the power stage (see Table 6, parameters 6.1.11). The
clamping voltage VDS(CL)is depending on the junction temperature Tj and load current IL (see Figure 20 for
details).
A repetitive operation under clamping condition must be avoided.
Data Sheet
20
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
VBAT
IN
Z(A Z)G ND
VS
Logic
VIN
Z(ESD -L)
RIN
Z( AZ) IS
Z(E SD- H)
RVS
IS
OUT
GND
RIS
Figure 20
Overvoltage Protection with External Components
5.3.5
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the risk
of overtemperature, the device provides Infineon® Reversave function. The power in this intrinsic body diode is
limited by turning the DMOS ON. The DMOS resistance is then equal to RDS(ON)_REV.
Additonally, the current into the logic has to be limited. The device includes a RVS resistor which limits the current
in the diodes. To avoid overcurrent in the RVS resistor, it is nevertheless recommended to use a RIN resistor. Please
refer to maximum current described in Chapter 4.1. Figure 21 shows a typical application. RIS is used to limit the
current in the sense transistor which behaves as a diode.
The recommended typical values for RIN is 4.7kΩ and for RSENSE 1kΩ.
-VBAT
I RVS
VS
Rev. ON
Z(A Z)G ND
Z(ESD -H )
Z( AZ) IS
RVS
OUT
Z( ESD -L)
-I L
Microcontroller
DOUT
Figure 21
Data Sheet
RIN
IN
IS
GND
RIS
I IN
-IGND
-IIS
GND
Reverse Polarity Protection with External Components
21
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.3.6
Overload Protection
In case of overload, high inrush current or short circuit to ground, the BTS50015-1TMA offers several protection
mechanisms. Any protective switch OFF latches the output. To restart the device, it is necessary to set IN=LOW
for t > tIN(RESETDELAY). This behavior is known as latch behavior. Figure 22 gives a sketch of the situation.
5.3.6.1
Activation of the Switch into Short Circuit (Short circuit Type 1)
When the switch is activated into short circuit, the current will raise until reaching the IL(TRIP) value. After tOFF(TRIP),
the device will turn OFF and latches until the IN pin is set to low for t > tIN(RESETDELAY). An undervoltage shutdown
will not reset the latched fault overcurrent. For overload (short circuit or overtemperature), the maximum retry cycle
(ffault) under fault condition must be considered.
5.3.6.2
Short Circuit Appearance when the Device is already ON (Short circuit Type 2)
When the device is in ON state and a short circuit to ground appears at the output (SC2) with a overcurrent higher
than IL(TRIP) for a time longer than tOFF(TRIP), the device automatically turns OFF and latches until the IN pin is set
to low for t > tIN(RESETDELAY).
5.3.7
Temperature Limitation in the Power DMOS
The BTS50015-1TMA incorporates an absolute (TJ(TRIP)) temperature sensor. Activation of the sensor will cause
an overheated channel to switch OFF to prevent destruction. The device restarts when the IN pin is toggled and
the temperature has decreased below TJ(TRIP) - ΔTJ(TRIP).
tIN(RESETDELAY)
IN
IL
tOFF(TRIP)
t
tOFF(TRIP)
ICL(1)
ICL(0)
t
TJ
TJ(TRIP)
TA
t
IIS
IIS(FAULT)
Figure 22
Data Sheet
Input disable
IIS(F AULT) disable
Overtemperature
IIS (FAULT) disable
Input disable
Short Circuit 1
Input disable
IIS (FAULT) disable
Short Circuit 2
start
0
t
Overload Protection
22
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
The current sense exact signal timing can be found in the Chapter 5.4. It is represented here only for device’s
behavior understanding.
In order to allow the device to detect overtemperature conditions and react effectively, it is recommended to limit
the power dissipation below PTOT (parameter 4.1.15).
Data Sheet
23
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.4
Diagnostic Functions
For diagnosis purposes, the BTS50015-1TMA provides a combination of digital and analog signal at pin IS.
5.4.1
IS Pin
The BTS50015-1TMA provides an enhanced current sense signal called IIS at pin IS. As long as no “hard” failure
mode occurs (short circuit to GND / overcurrent / overtemperature) and the condition VIS ≤ VOUT - 5V is fulfilled, a
proportional signal to the load current (ratio kILIS = IL / IS) is provided. The complete IS pin and diagnostic
mechanism is described in Figure 23. The accuracy of the sense current depends on temperature and load
current. In case of failure, a fixed IIS(FAULT) is provided. In order to enable the fault current reporting, the condition
VS - VOUT > 2V must be fulfilled. In order to get the fault current in the specified range, the condition VS - VIS ≥ 5V
must be fulfilled.
Vs
RVS
VS -V OUT>2V
IIS(FAULT)
FAULT
ZIS(AZ)
(IL / dk ILIS) ± IIS0
&
1
IS
0
Figure 23
Diagnostic Block Diagram
5.4.2
SENSE Signal in Different Operation Mode
Table 5
Sense Signal, Function of Operation Mode1)
Operation mode
Input Level
Output Level VOUT
Diagnostic Output (IS)2)
Normal operation
LOW (OFF)
~ GND
IIS(OFF)
Short circuit to GND
GND
Z
Overtemperature
Z
Z
Short circuit to VS
VS
Z
Open Load
Z
Z
Inverse current
> VS
Z
~ VS
IIS = (IL / dkILIS) ± IIS0
Overcurrent condition
< VS
IIS = (IL / dkILIS) ± IIS0...IIS(FAULT)
Short circuit to GND
~ GND
IIS(FAULT)
Overtemperature TJ(TRIP) event
Z
IIS(FAULT)
Short circuit to VS
VS
~ VS
> VS
IIS = 0 ... IL / dkILIS ± IIS0
Normal operation
Open Load
Inverse current
HIGH (ON)
IIS0
Z
1) Z = High Impedance
2) See Chapter 5.4.3 for Current Sense Range and Improved Current Sense Accuracy
Data Sheet
24
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.4.3
SENSE Signal in the Nominal Current Range
Figure 24 and Figure 25 show the current sense as function of the load current in the power DMOS. Usually,
a pull-down resistor RIS is connected to the current sense pin IS. A typical value is 1kΩ. The dotted curve
represents the typical sense current, assuming a typical dkILIS factor value. The range between the two solid
curves shows the sense accuracy the device is able to provide, at a defined current.
IL
I IS = --------------±I
dk ILIS IS0
with ( I IS ≥ 0 )
(1)
Where the definition of dkILIS is:
I L4 – I L1
dk ILIS = ----------------------I IS4 – I IS1
(2)
3.5
dkILIS (min)
3
dkILIS (typ)
2.5
dkILIS (max)
IIS (mA)
2
1.5
1
0.5
IIS0(max)
0
0
20
IL1
40
IL2
60
80
IL3
100
120
IL4
140
160
IL (A)
Figure 24
Current Sense for Nominal and Overload Condition
5.4.3.1
SENSE Signal Variation and calibration
In some application, an enhanced accuracy is required around the device nominal current range IL(NOM). To
achieve this accuracy requirement, a calibration on the application is possible. After two points calibration, the
BTS50015-1TMA will have a limited IIS value spread at different load currents and temperature conditions. The IIS
Data Sheet
25
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
variation can be described with the parameters Δ(dkILIS(cal)) and the αIS0. The blue solid line in Figure 25 is the
current sense ratio after the two point calibration. The slope of this line is defined as follow:
I S ( cal )2 – I S ( cal )1
1
---------------------------- = ---------------------------------------dk KILIS ( cal )
I L ( cal )2 – I L ( cal )1
(3)
The bluish in area in Figure 25 is the range where the current sense ratio can vary after performing the
calibration. The accuracy of the load current sensing is improved and, given a sense current value IIS(measured
in the application), the load current can be calculated as follow:
Δ ( dk ILIS ( cal ) )⎞ ⎛
I IS0 ( cal )
⎞
I L = dk ILIS ( cal ) ⋅ ⎛ 1 + ---------------------------------⋅ ⎝ I IS – ----------------------------------------------⎝
⎠
1 + α ( T – T )⎠
100
IS0
x
(4)
cal
where dkILIS(cal) is the current sense ratio measured after two-points calibration (defined in Equation (3)), IIS0(cal) is
the current sense offset (calculated after two points calibration, see Equation (5)), Tx is the operating temperature,
and Tcal is temperature at which the calibration is performed (25°C). The Equation (4) actually provides two values
for load current, considering that Δ(dkILIS(cal)) can be both positive and negative (see parameter 6.1.47 in Table 6 ).
I L ( cal )1
I L ( cal )2
I IS0(cal) = I S ( cal )1 – ------------------------= I S ( cal )2 – ------------------------dk ILIS ( cal )
dk ILIS ( cal )
(5)
1
IIS
dk ILIS(cal)
8%
8%
IIS(cal)2
IIS
IIS(cal)1
IIS0(cal)
IL
IL(cal)2
IL(cal)1
IL
Calibration points
Figure 25
Data Sheet
Improved Current Sense Accuracy after 2-Point Calibration
26
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Functional Description
5.4.3.2
SENSE Signal Timing
Figure 26 shows the timing during settling and disabling of the sense.
tOF F tIN (RESET DELAY)
VIN
Short /
Overtemp.
t
t
VOUT
IIS
IIS (fault ) t
IIS 1.. 4
latch
no
reset
VIN
V IN
IL
90% of
IL s tatic
tO N
t
Short
circuit
t
VOUT
V OUT
I IS
90% of
IS s tatic
t
reset
t
t s IS(O N)
tp IS (O N)_ 9 0
t
t
3V
t
IIS
IIS (fault )
IIS 1.. 4
t s IS(O N)_ J
t
Figure 26
Fault Acknowledgement
5.4.3.3
SENSE Signal in Case of Short Circuit to VS
tp IS(FAU L T)
t
In case of a short circuit between OUT and VS pin, a major part of the load current will flow through the short circuit.
As a result, a lower current compared to the nominal operation will flow through the DMOS of the BTS500151TMA, which can be recognized at the current sense signal.
5.4.3.4
SENSE Signal in Case of Over Load
An over load condition is defined by a current flowing out of the DMOS reaching the current over load ICL or the
junction temperature reaches the thermal shutdown temperature TJ(TRIP). Please refer to Chapter 5.3.6 for details.
In that case, the SENSE signal will be in the range of IIS(FAULT) when the IN pin stays HIGH.
This is a device with latch function. The state of the device will remain and the sense signal will remain on IIS(FAULT)
until a reset signal comes from the IN pin. For example, when a thermal shutdown happened, even the over
temperature condition was disappeared, the DMOS can only be reactivated when a reset signal is send to the IN
pin.
Data Sheet
27
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
6
Electrical characteristics BTS50015-1TMA
6.1
Electrical Characteristics Table
Table 6
Electrical Characteristics: BTS50015-1TMA
VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Number
Operating and Standby Currents
Operating current (channel
active)
IGND
–
1.2
3
mA
VIN ≥ 2.2V
6.1.1
Standby current for whole
device with load at ambient
IS(OFF)
–
7
18
μA
2)
VS = 18V
VOUT = 0V
VIN ≤ 0.8V
TJ ≤ 85°C
See Figure 27
See Figure 28
6.1.2
Maximum standby current for IS(OFF)
whole device with load at max
junction
–
30
1000
μA
VS = 18V
VOUT = 0V
VIN =0.8V
TJ =150°C
See Figure 27
See Figure 28
6.1.3
–
2.1
3
mΩ
1)
6.1.4
Power Stage
ON state resistance in
forward condition
RDS(ON)
IL = 135A
VIN = 2.2V
TJ = 150°C
See Figure 31
ON state resistance in
forward condition, Low
battery voltage
RDS(ON)
–
5
10
mΩ
1)
mΩ
1)2)
IL = 20A
VIN ≥ 2.2V
VS = 5.5V
TJ = 150°C
6.1.5
See Figure 33
ON state resistance in
forward condition
RDS(ON)
–
1.5
–
IL = 135A
VIN = 2.2V
TJ = 25°C
6.1.6
See Figure 31
ON state resistance in
inverse condition
RDS(ON)_INV
–
2.1
3.1
mΩ
1)
mΩ
1)2)
IL = -135A
VIN ≥ 2.2V
TJ = 150°C
6.1.7
See Figure 11
ON state resistance in
inverse condition
RDS(ON)_INV
–
1.5
–
IL = -135A
VIN ≥ 2.2V
TJ = 25°C
6.1.8
See Figure 11
Data Sheet
28
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Table 6
Electrical Characteristics: BTS50015-1TMA (cont’d)
VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
IL(NOM)
33
39
–
A
TA = 85°C3)
TJ ≤ 150°C
6.1.9
Drain to source clamp voltage VDS(CL)
VDS(CL) = VS - VOUT
28
–
60
V
IDS = 50mA
See Figure 39
6.1.11
Output leakage current at
ambient
IL(OFF)
–
3
15
μA
2)
Output leakage current at
max junction temperature
IL(OFF)
–
30
1000
μA
VIN ≤ 0.8V
VOUT = 0V
TJ = 150°C
6.1.14
Turn ON Slew rate
VOUT = 25% to 50% VS
dV/dtON
0.05
0.23
0.5
V/μs
RL = 0.5Ω
VS = 13.5V
6.1.15
Turn OFF Slew rate
VOUT = 50% to 25% VS
-dV/dtOFF
0.05
0.25
0.55
V/μs
6.1.16
Turn ON time to
VOUT = 90% VS
tON
–
220
700
μs
Turn OFF time to
VOUT = 10% VS
tOFF
–
300
700
μs
See Figure 6
See Figure 33
See Figure 34
See Figure 35
See Figure 36
Turn ON time to
VOUT = 10% VS
tON_delay
–
80
150
μs
6.1.19
Turn OFF time to
VOUT = 90% VS
tOFF_delay
–
230
500
μs
6.1.20
Switch ON energy
EON
–
7
–
mJ
2)
mJ
2)
Nominal load current
VIN ≤ 0.8V
6.1.13
VOUT = 0V
TJ ≤ 85°C
RL = 0.5Ω
VS = 13.5V
6.1.17
6.1.18
6.1.21
See Figure 37
Switch OFF energy
EOFF
–
5
–
RL = 0.5Ω
VS = 13.5V
6.1.22
See Figure 38
Input Pin
–
–
0.8
V
See Figure 41
6.1.23
2.2
–
–
V
See Figure 42
6.1.24
Input voltage hysteresis
VIN(L)
VIN(H)
VIN(HYS)
–
200
–
mV
2)
6.1.25
LOW level input current
IIN(L)
8
–
–
μA
6.1.26
HIGH level input current
IIN(H)
–
–
80
μA
VIN = 0.8V
VIN ≥ 2.2V
0
30
1000
μA
LOW level input voltage
HIGH level input voltage
6.1.27
Protection: Loss of ground
Output leakage current while IOUT(GND_M)
module GND disconnected
2)4)
VS = 18V
VOUT = 0V
6.1.28
IS & IN pins open
GND pin open
TJ = 150°C
See Figure 16
Data Sheet
29
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Table 6
Electrical Characteristics: BTS50015-1TMA (cont’d)
VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter
Symbol
Output leakage current while IOUT(GND)
device GND disconnected
Values
Min.
Typ.
Max.
0
30
1000
Unit
Note /
Test Condition
Number
μA
VS = 18V
6.1.29
GND pin open
VIN ≥ 2.2V
1kΩ pull down
from IS to GND
4.7kΩ to IN pin
TJ = 150°C
See Figure 16
See Figure 43
Protection: Reverse polarity
1)
ON state resistance in
Infineon® Reversave
RDS(ON)_REV
–
–
3.2
mΩ
6.1.30
VS = 0V
VGND =VIN =16V
IL = -20A
TJ = 150°C
See Figure 21
ON state resistance in
Infineon® Reversave
RDS(ON)_REV
–
1.5
–
mΩ
1)2)
6.1.31
VS = 0V
VGND =VIN =16V
IL = -20A
TJ = 25°C
See Figure 46
Integrated resistor
RVS
–
60
90
Ω
TJ = 25°C
6.1.32
Overvoltage protection
GND pin to VS
VS(AZ)_GND
64
70
80
V
See Figure 20
See Figure 40
6.1.33
Overvoltage protection
IS pin to VS
VS(AZ)_IS
64
70
80
V
GND and IN pin
open
See Figure 20
See Figure 40
6.1.34
ICL(0)
135
175
–
A
VS = 13.5V, static 6.1.35
TJ = 150°C
ICL(0)
145
185
–
A
VS = 13.5V, static
TJ = -40...25°C
Protection: Overvoltage
Protection: Overload
Current trip detection level
See Figure 22
See Figure 22
Current trip maximum level
ICL(1)
–
190
250
A
2)
Overload shutdown delay
time
tOFF(TRIP)
–
12
–
μs
2)
6.1.36
Thermal shutdown
temperature
TJ(TRIP)
150
1702)
2002)
°C
See Figure 22
6.1.37
–
10
–
K
2)
6.1.38
Thermal shutdown hysteresis ΔTJ(TRIP)
Data Sheet
30
VS = 13.5V
dIL/dt = 1A/μs
See Figure 44
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Table 6
Electrical Characteristics: BTS50015-1TMA (cont’d)
VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter
Symbol
Values
Min.
Typ.
Max.
4
6
8
Unit
Note /
Test Condition
Number
mA
VIN = 4.5V
VS - VIS ≥ 5V
6.1.40
Diagnostic Function: Sense pin
Sense signal current in fault
condition
IIS(FAULT)
Diagnostic Function: Current sense ratio signal in the nominal area, stable current load condition
Current sense differential
ratio
dkILIS
43700
51500
58200
–
Current sense
IL = IL0 = 50mA
IIS0
–
1
200
μA
IL4 = 135A
IL1 = 20A
6.1.41
See Equation (2)
VIN ≥ 2.2V
VS - VIS ≥ 5V
6.1.42
TJ = -40°C
See Figure 24
–
1
150
μA
VIN ≥ 2.2V
VS - VIS ≥ 5V
TJ ≥25°C
See Figure 24
Current sense
IL = IL1 = 20A
IIS1
190
390
650
μA
VIN ≥ 2.2V
VS - VIS ≥ 5V
6.1.43
Current sense
IL = IL2 = 40A
IIS2
530
780
1110
μA
See Figure 24
6.1.44
Current sense
IL = IL3 = 80A
IIS3
1.22
1.55
2.02
mA
VIN ≥ 2.2V
VS - VIS ≥ 5V
6.1.45
Current sense
IL = IL4 = 135A
IIS4
2.16
2.60
3.28
mA
See Figure 24
6.1.46
Current sense ratio spread
over temperature and
repetitive pulse operation
lafter 2-points calibration
Δ(dkILIS(cal))
–
±8
–
%
2)
6.1.47
Temperature coefficient for
IIS0(cal)
αIS0
–
3.8
–
‰/K
2)
700
μs
VIN ≥ 2.2V
VS = 13.5V
RL = 0.5Ω
See Figure 25
see
6.1.54
Equation (4) and
Equation (5)
Diagnostic Function: Diagnostic timing in normal condition
Current sense propagation
time until 90% of IIS stable
after positive input slope on
IN pin
tpIS(ON)_90
0
–
6.1.48
See Figure 26
Current sense settling time to tsIS(ON)
IIS stable after positive input
slope on IN pin
–
–
3000
μs
VIN ≥ 2.2V
VS = 13.5V
RL = 0.5Ω
6.1.49
See Figure 26
IIS leakage current when IN
disabled
Data Sheet
IIS(OFF)
0
0.05
31
1
μA
VIN ≤ 0.8V
RIS =1kΩ
6.1.50
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Table 6
Electrical Characteristics: BTS50015-1TMA (cont’d)
VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter
Current sense propagation
time after load jump during
ON condition
Symbol
tsIS(ON)_J
Values
Min.
Typ.
Max.
–
350
–
Unit
Note /
Test Condition
Number
μs
VIN ≥ 2.2V
dIL/dt = 0.4A/μs
6.1.51
μs
2)
2)
Diagnostic Function: Diagnostic timing in overload condition
Current sense propagation
tpIS(FAULT)
time for short circuit detection
Delay time to reset fault
signal at IS pin after turning
OFF VIN
0
–
100
VIN ≥ 2.2V
6.1.52
from VOUT= VS-3V
to IIS(FAULT)_min
See Figure 26
tIN(RESETDELAY) 250
1000
1500
μs
2)
6.1.53
Timing: Inverse Behavior
Propagation time from
VOUT > VS to fault disable
tp,INV,noFAULT
–
4
–
μs
2)
6.1.55
Propagation time from
VOUT < VS to fault enable
tp,noINV,FAULT
–
10
–
μs
2)
6.1.56
See Figure 12
See Figure 12
1) Only valid for minimum distance between package and PCB. Electrical connection between Tab and VS required otherwise
additional 0.8mΩ must be added. For electrical connection at the End of the OUT leads, additional lead resistance of 0.2mΩ
must be added.
2) Not subject to production test, specified by design
3) Value is calculated from the parameters typ. RthJA(2s2p), with 65K temperature increase, typ. and max. RDS(ON)
4) All pins are disconnected except VS and OUT
Data Sheet
32
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
6.2
General Product Characteristics
Typical Performance Characteristics
Figure 27
Standby Current for Whole Device with Figure 28
Load, IS(OFF) = f(VS, TJ)
Standby Current for Whole Device with
Load, IS(OFF) = f(TJ) at VS = 13.5V
30
40
-40°C
0°C
35
25°C
25
85°C
30
100°C
20
150°C
25
IS(OFF) [µA]
IS(O FF) [µA]
125°C
20
15
15
10
10
5
5
0
0
10
20
30
0
-40 -20
V S [V]
20
40
60
80 100 120 140 160
o
TJ [ C]
Figure 30
GND Leakage Current
IGND(OFF) = f(VS, TJ)
4
4
3.5
3.5
3
3
2.5
2.5
IGND(OFF) [µA]
I GND(OFF) [µA]
Figure 29
0
2
1.5
-40°C
GND Leakage Current
IGND(OFF) = f(TJ) at VS = 13.5V
2
1.5
0°C
1
1
25°C
85°C
100°C
0.5
0.5
125°C
150°C
0
0
5
10
15
20
25
0
30
-40 -20 0 20 40 60 80 100 120 140 160
TJ [oC]
V S [V]
Data Sheet
33
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Figure 31
ON State Resistance
RDS(ON) = f(VS, TJ), IL = 20A ... 135A
Figure 32
5
ON State Resistance
RDS(ON) = f(TJ),VS = 13.5V,IL = 20A...135A
2.5
4.5
-40°C
25°C
4
2
150°C
R DS(ON) [mΩ]
RDS(ON) [mΩ]
3.5
3
2.5
2
1.5
1
1.5
0.5
1
0.5
0
0
5
7
9
11
13
-40 -20
15
0
20 40 60 80 100 120 140 160
T J [°C]
V S [V]
Figure 33
Figure 34
Turn ON Time
tON = f(VS, TJ), RL = 0.5Ω
1200
450
400
-40°C
1000
25°C
350
150°C
800
-40°C
25°C
300
tOFF [µs]
t ON [µs]
Turn OFF Time
tOFF = f(VS, TJ), RL = 0.5Ω
600
150°C
250
200
150
400
100
200
50
0
0
0
5
10
15
20
25
0
30
10
15
20
25
30
V S [V]
V S [V]
Data Sheet
5
34
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Figure 35
Slew Rate at Turn ON
dV / tON = f(VS, TJ), RL = 0.5Ω
Figure 36
0.9
Slew Rate at Turn OFF
dV / tOFF = f(VS, TJ), RL = 0.5Ω
0.9
0.8
0.8
-40°C
-40°C
25°C
0.7
dV/dt OFF [V/µs]
0.6
dV/dt ON [V/µs]
25°C
0.7
150°C
0.5
0.4
0.3
150°C
0.6
0.5
0.4
0.3
0.2
0.2
0.1
0.1
0
0
0
5
10
15
20
25
0
30
5
10
Figure 38
Switch ON Energy
EON = f(VS, TJ), RL = 0.5Ω
25
30
25
30
Switch OFF Energy
EOFF = f(VS, TJ), RL = 0.5Ω
40
40
35
35
-40°C
-40°C
25°C
25°C
30
30
150°C
150°C
25
E OFF [mJ]
25
E ON [mJ]
20
V S [V]
V S [V]
Figure 37
15
20
20
15
15
10
10
5
5
0
0
0
5
10
15
20
25
30
0
V S [V]
Data Sheet
5
10
15
20
V S [V]
35
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Figure 39
Drain to Source Clamp Voltage
VDS(CL) = f(TJ), IL = 50mA
Figure 40
Overvoltage Protection
VS(AZ)_GND = f(TJ), VS(AZ)_IS = f(TJ)
80
44
78
42
V S(AZ)_GND, V S(AZ)_IS [V]
76
V DS(CL) [V]
40
38
36
34
74
72
70
68
66
64
32
62
30
60
-40 -20
0
20 40
60 80 100 120 140 160
-40 -20
0
20 40 60 80 100 120 140 160
T J [°C]
Figure 42
LOW Level Input Voltage
VIN(L) = f(VS, TJ)
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
V IN(H) [V]
V IN(L) [V]
Figure 41
T J [°C]
1
0.8
HIGH Level Input Voltage
VIN(H) = f(VS, TJ)
1
0.8
0.6
0.6
-40°C
-40°C
25°C
0.4
25°C
0.4
150°C
150°C
0.2
0.2
0
0
0
5
10
15
20
25
0
30
10
15
20
25
30
V S [V]
V S [V]
Data Sheet
5
36
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Figure 43
Output Leakage Current while Device Figure 44
GND Disconnected, IOUT(GND) = f(VS, TJ)
25
400
350
-40°C
20
25°C
300
150°C
15
ICL(1) [A]
IOUT(GND) [µA]
Overload Detection Current
ICL(1) = f(dIL/dt, TJ), VS = 13.5V
10
250
200
-40°C
25°C
150°C
150
100
5
50
0
0
0
5
10
15
20
25
0
30
2
4
Figure 46
Resistance in Reversave
RDS(ON)_REV = f(VS, TJ), IL = -120A
10
Resistance in Reversave
RDS(ON)_REV = f(VS, TJ), IL = -20A
16
16
14
14
-40°C
25°C
12
-40°C
25°C
12
150°C
RDS(ON)_REV [mΩ]
RDS(ON)_REV [mΩ]
8
dI L/dt [A/µs]
V S [V]
Figure 45
6
10
8
6
10
8
6
4
4
2
2
0
150°C
0
4
6
8
10
12
14
16
18
4
8
10
12
14
16
18
VS [V]
VS [V]
Data Sheet
6
37
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Electrical characteristics BTS50015-1TMA
Figure 47
Input Current IIN = f(TJ)
VS = 13.5V; VIN(L) = 0.8V; VIN(H) = 5.0V
Figure 48
Input Current IIN = f(VIN, TJ)
VS =13.5V
60
60
IIN(L)
50
50
IIN(H)
40
IIN [µA]
IIN [µA]
40
30
20
30
-40°C
20
25°C
150°C
10
10
0
-40 -20
0
20
40
60
80
0
100 120 140 160
0
TJ [°C]
Figure 49
2
4
6
8
10
12
14
VIN [V]
GND current IGND = f(VS, TJ)
VIN = 2.2V
1.6
1.4
1.2
I GND [mA]
1.0
-40°C
25°C
0.8
150°C
0.6
0.4
0.2
0.0
4
8
12
16
20
24
28
V S [V]
Data Sheet
38
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Package Outlines
Package Outlines
A
1.27 ±0.1
C
0...0.15
3.7 ±0.3
10.2 ±0.3
0.05
7 x 0.6 ±0.1
6 x 1.27
1.6 ±0.3
0...0.3
8.6 ±0.3
12.95 1)
17 ±0.3
8.5 1)
15.65 ±0.3
4.4
9.25 ±0.2
10 ±0.2
9.9 ±0.2
2.8 ±0.2
3.7-0.15
7
0.5 ±0.1
2.4
3.9 ±0.4
0.25
M
A C
8.4 ±0.4
1) Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
PG-TO220-7-232-PO V01 Dimensions in mm
Figure 50
PG-TO-263-7-8 (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
39
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Application Information
8
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
R/L supply
VDD
CVS1
Vdd_p
CVS2
Vs
OUT
Module
ground
IN
RIN
Za
RECU
XC2x
(P11_MR)
LECU
OUT
CIN
Zb
Rcable
R SENSE
IS
P5.x (A/D)
CSENSE
GND
COUT
RIS
Lcable
Vss
Load
Module ground
Figure 51
Application Diagram with BTS50015-1TMA
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
Note: This application circuit is valid only if the device does not enter the clamping mode, otherwise the
recommendation in Figure 52 are valid.
Table 7
Bill of material
Reference
Value
Purpose
RIN
4.7kΩ
Protection of the microcontroller during overvoltage, reverse polarity
allows BTS50015-1TMA channels OFF during loss of ground
RIS
1kΩ
Sense resistor
RSENSE
4.7kΩ
Protection of the microcontroller during overvoltage
Protection of the BTS50015-1TMA during reverse polarity
Za
Zener diode
Protection of the BTS50015-1TMA during loss of load with primary charged
inductance, see Chapter 5.3.2
Zb
Zener diode
Protection of the BTS50015-1TMA during loss of battery or against huge
negative pulse at OUT (like ISO pulse 1), see Chapter 5.3.2
CSENSE
10nF
Sense signal filtering
CVS1
100nF
Improved EMC behavior (in layout, pls. place close to the pins)
Data Sheet
40
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Application Information
Table 7
Bill of material
Reference
Value
Purpose
CVS2
10μF to 22μF
Suppression of transient over voltages exceeding 4.2.8
COUT
10nF
Improved EMC behavior (in layout, pls. place close to the pins)
CIN
150nF
BTS50015-1TMA tends to latched switch-off due to short negative transients
on supply pin; CIN automatically resets the device
V BAT
R/L supply
V DD
CVS1
Vdd_p
CVS2
Vs
OUT
Options for free wheeling
path of inductive load
Module
ground
IN
RIN
Option
A
Za
OUT
CIN
XC2x
(P11_MR)
Option
B
Zb
Z1
R/L cable
Z1
R SENSE
P5.x
IS
(A/D)
RIS
inductive load
T1
Optional :
MOSFET to block
reverse current
D
Vss
G
S
CSENSE
Z2
COUT
GND
Module ground
Figure 52
Application Diagram with BTS50015-1TMA
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
Note: This application circuit is valid also every time the device enters the clamping mode, although it is not driving
a pure inductive load.
Table 8
Bill of material
Reference Value
Purpose
RIN
4.7kΩ
Protection of the microcontroller during overvoltage, reverse polarity
allows BTS50015-1TMA channels OFF during loss of ground
RIS
1kΩ
Sense resistor
RSENSE
4.7kΩ
Protection of the microcontroller during overvoltage
Protection of the BTS50015-1TMA during reverse polarity
Za
Zener diode
Protection of the BTS50015-1TMA during loss of load with primary
charged inductance, see Chapter 5.3.2
Data Sheet
41
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Application Information
Table 8
Bill of material
Reference Value
Purpose
Zb
Zener diode
Protection of the BTS50015-1TMA during loss of battery or against
negative huge pulses at OUT (like ISO pulse 1), see Chapter 5.3.2
Z1
Z2
Schottky diode
Protection of the BTS50015-1TMA when driving an inductive load. Z2
Zener Transient Suppressor is added in option A to demagnetize more quickly the inductance
associated with the cable. Only one of the two possible options A and
B should be implemented
T1
n-channel MOSFET
Optional. It can be added to block reverse current in protection diodes.
CSENSE
10nF
Sense signal filtering
CVS1
100nF
Improved EMC behavior (in layout, pls. place close to the pins)
CVS2
10μF to 22μF
Suppression of transient over voltages exceeding 4.2.8
COUT
10nF
Improved EMC behavior (in layout, pls. place close to the pins)
CIN
150nF
BTS50015-1TMA tends to latched switch-off due to short negative
transients on supply pin; CIN automatically resets the device
Data Sheet
42
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Application Information
8.1
•
•
Further Application Information
Please contact us for information regarding the pin FMEA
For further information you may contact http://www.infineon.com/
Data Sheet
43
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Revision History
9
Revision History
Revision
Date
Changes
1.3
2014-07-21
Chapter 1, section “Application” slightly modified
Table 1 on Page 4, symbol ΔkILIS changed into dkILIS
Page 4, Embedded Protection Functions slightly changed
Figure 1 slightly changed
Table 2 on Page 8, min value of the parameter 4.1.8 under condition t≤ 2min
added
Table 2 on page 10, parameter 4.1.12 removed
Figure 5 (Maximum Energy dissipation for inductive switch OFF, EA vs Load
Current) removed
Table 3 on Page 11, absolute value added at parameter 4.2.7
Table 3 on Page 11, parameter 4.2.8 added
Table 4 on Page 12, updated
Table 4 on Page 12, footnote added
Chapter 4.3, graph added
Chapter 5.1.2 modified and Note removed
Chapters 5.1.3.1 and 5.1.3.2 removed
Chapter 5.1.3 modified
Figure 8 slightly modified
Figure 8, caption modified
Figure 9 added
Figure 9(old) removed
Figure 10 added
Figure 15 slightly modified
Figure 16 slightly modified
Chapter 5.3.2 slightly changed
Chapter 5.3.4 modified
Figure 20 slightly modified
Figure 21 slightly modified
Chapter 5.3.6.2, last sentence removed
Chapter 5.3.7, slightly modified
Chapter 5.3.7, a sentence added
Figure 23 slightly modified
Table 5 on Page 24, diagnostic output of “Normal Operation”, “Overcurrent
Condition” and “Short Circuit to VS” modified
Equation 3 replaced by Equation (1)
Equation 4 replaced by Equation (2)
Figure 24 changed
Chapter 5.4.3.1 modified
Former Equation (5) removed
Equation (3) added
Equation (5) added
Former Equation (6) replaced with Equation (4)
Figure 25 changed
Table 6 on Page 28, parameter 6.1.2, footnote added
Data Sheet
44
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Revision History
Revision
Date
Changes
1.3
2014-07-21
Table 6 parameter 6.1.41, description changed from “Current Sense Ratio” to
“Current Sense Differential Ratio”
Table 6, parameter 6.1.41, symbol modified
Table 6, parameter 6.1.42, one row added, differentiating the parameter
according to the temperature range
Table 6, parameter 6.1.43, min value added
Table 6, parameter 6.1.43, max value modified
Table 6, parameter 6.1.44, min value modified
Table 6, parameter 6.1.44, max value modified
Table 6, parameter 6.1.45, min value modified
Table 6, parameter 6.1.45, typ value modified
Table 6, parameter 6.1.45, max value modified
Table 6, parameter 6.1.46, min value modified
Table 6, parameter 6.1.46, max value modified
Table 6, parameter 6.1.47, parameter description modified
Table 6, parameter 6.1.47, parameter symbol changed
Table 6, parameter 6.1.47, ± symbol added before the typ value
Table 6, parameter 6.1.54, parameter description modified
Table 6, parameter 6.1.54, parameter symbol modified
Table 6, parameter 6.1.54, typ value changed
Table 6, parameter 6.1.54, parameter unit changed
1.2
2012-11-12
Note added below Figure 7 in Chapter 5.1.2
Note added below Figure 50 in Chapter 8
Note added below Figure 51 in Chapter 8
Data Sheet
45
Rev. 1.3, 2014-07-21
BTS50015-1TMA
Revision History
Revision
Date
Changes
1.1
2012-06-14
Page 12, figure 6 removed (refer to Rev. 1.0)
Chapter 5.1.3.2 ,Page 16, last sentence added (“If the application requires the
inductive load to be switched on/off repetitively, the recommendation in Chapter 8
must be followed”)
Figure 14 on page 19 modified
Chapter 5.3.2, Page 20,third and fourth sentences modified, from “In case of loss
of VS” to “...as shown in Figure 17”.
Figure 16 on page 20 modified
Figure 17 on page 20 modified
Chapter 5.3.4, Page 21, third row, parameter EAR deleted
Table 6, Page 29, parameter 6.1.23, value indicated as minimum is actually
maximum
Table 6, Page 29, parameter 6.1.24, value indicated as maximum is actually
minimum
Table 6, Page 30, in the description of the parameter 6.1.40, word “maximum”
deleted
Figure 50 on page 39 modified
Figure 50 on page 39, “driving R/C loads” added in the caption and “TAA”
corrected as TMA
Table 7 on page 39, fifth row deleted (refer to Rev. 1.0)
Table 7 on page 39, two rows added (describing Za and Zb)
figure 51 on page 40added
Page 40 Note: “This represents only a recommendation for driving inductive loads.
The function must be verified in the real application.” added
Table 8 on page 40 added
1.0
2011-11-16
Datasheet released
Data Sheet
46
Rev. 1.3, 2014-07-21
Edition 2014-07-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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