PR OFET™ + 12V
BTS5012-1EKB
Smart High-Side Power Switch
Single Channel, 12mΩ
Data Sheet
Rev. 2.0, 2012-04-17
Automotive Power
BTS5012-1EKB
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
3.3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
15
16
16
17
17
19
6
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
21
21
22
23
23
23
24
26
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . .
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27
27
28
29
29
30
31
31
31
32
33
33
33
34
8
8.1
8.2
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Data Sheet
PROFET™+ 12V
2
7
7
7
8
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Table of Contents
8.3
8.4
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9
9.1
9.1.1
9.1.2
9.1.3
9.1.4
9.2
9.2.1
9.2.2
9.2.3
9.2.4
9.2.5
9.2.6
9.2.7
9.2.8
9.2.9
9.3
9.3.1
9.3.2
9.4
9.4.1
9.4.2
9.4.3
9.4.4
9.5
9.5.1
9.5.2
9.5.3
9.5.4
Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Minimum Functional Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Undervoltage Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Consumption Channel active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Standby Current for Whole Device with Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage Drop Limitation at Low Load Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain to Source Clamp Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slew Rate at Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slew Rate at Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn ON / OFF matching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switch ON Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switch OFF Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload Condition in the Low Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload Condition in the High Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Sense at no Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load Detection Threshold in ON State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sense Signal Saturation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sense Signal maximum Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Threshold ON to OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Threshold OFF to ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Current High Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10.1
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Data Sheet
PROFET™+ 12V
3
38
38
38
38
39
39
39
39
40
41
41
41
42
42
43
43
44
44
44
45
45
45
46
46
47
47
47
48
48
Rev. 2.0, 2012-04-17
Smart High-Side Power Switch
1
BTS5012-1EKB
Overview
Application
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for loads with high inrush current, such as lamps
Basic Features
•
•
•
•
•
•
•
•
•
One channel device
Very low stand-by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
AEC qualified
PG-DSO-14-47 EP
Description
The BTS5012-1EKB is a 12 mΩ single channel Smart High-Side Power Switch, embedded in a PG-DSO-14-47
EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially
designed to drive lamps up to H4 / H7 or 3 x P27W + 2 x R5W, as well as LEDs in the harsh automotive
environment.
Table 1
Product Summary
Parameter
Symbol
Value
Operating voltage range
VS(OP)
VS(LD)
RDS(ON)
IL(NOM)
kILIS
IL5(SC)
IS(OFF)
5 V ... 28 V
Maximum supply voltage
Maximum ON state resistance at TJ = 150 °C
Nominal load current
Typical current sense ratio
Minimum current limitation
Maximum standby current with load at TJ = 25 °C
41 V
24 mΩ
10 A
4000
50 A
0.9 µA
Type
Package
Marking
BTS5012-1EKB
PG-DSO-14-47 EP
BTS5012-1EKB
Data Sheet
PROFET™+ 12V
4
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Overview
Diagnostic Functions
•
•
•
•
•
•
Proportional load current sense
Open load in ON and OFF
Short circuit to battery and ground
Overtemperature
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
•
•
•
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnect with external components
Overtemperature protection with restart
Overvoltage protection with external components
Voltage dependent current limitation
Enhanced short circuit operation
Data Sheet
PROFET™+ 12V
5
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Block Diagram
2
Block Diagram
VS
voltage sensor
internal
power
supply
over
temperature
driver
logic
IN
ESD
protection
DEN
IS
gate control
&
charge pump
over current
switch limit
load current sense and
open load detection
OUT
forward voltage drop detection
GND
Figure 1
T
clamp for
inductive load
Block diagram.emf
Block Diagram for the BTS5012-1EKB
Data Sheet
PROFET™+ 12V
6
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
NC
1
14
NC
NC
2
13
NC
GND
3
12
OUT
IN
4
11
OUT
DEN
5
10
OUT
IS
6
9
NC
NC
7
8
NC
Pinout single SO14.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
Cooling Tab
VS
Voltage Supply; Battery voltage
1, 2, 7, 8, 9, 13, 14 NC
Not Connected; No internal connection to the chip
3
GND
GrouND; Ground connection
4
IN
INput channel; Input signal for channel activation
5
DEN
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
6
IS
Sense; Sense current of the selected channel
10, 11, 12
OUT
OUTput; Protected high side power output channel1)
1) All output pins must be connected together on the PCB. All pins of the output are internally connected together. PCB traces
have to be designed to withstand the maximum current which can flow.
Data Sheet
PROFET™+ 12V
7
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
IS
VS
VS
IIN
IN
VIN
VDS
IDEN
DEN
VDEN
IIS
IS
IOUT
OUT
VOUT
GND
VIS
IGND
voltage and current convention single.vsd
Figure 3
Voltage and Current Definition
Data Sheet
PROFET™+ 12V
8
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
VS
-VS(REV)
-0.3
–
28
V
–
P_4.1.1
0
–
16
V
P_4.1.2
VBAT(SC)
0
–
24
V
t < 2 min
TA = 25 °C
RL ≥ 2 Ω
RGND = 150 Ω
2)
RECU = 20 mΩ
RCable= 16 mΩ/m
LCable= 1 μH/m,
l = 0 or 5 m
Supply Voltages
Supply voltage
Reverse polarity voltage
Supply voltage for short
circuit protection
P_4.1.3
See Chapter 6
and Figure 52
Supply voltage for Load dump VS(LD)
protection
–
–
41
V
3)
RI = 2 Ω
P_4.1.12
RL = 2 Ω
Short Circuit Capability
nRSC1
–
–
100
2)
k
cycles tON = 300ms
P_4.1.4
VIN
-0.3
–
–
6
7
V
P_4.1.13
IIN
VDEN
-2
–
2
mA
–
P_4.1.14
Voltage at DEN pin
-0.3
–
–
6
7
V
–
t < 2 min
P_4.1.15
Current through DEN pin
IDEN
-2
–
2
mA
–
P_4.1.16
VIS
IIS
-0.3
–
VS
V
–
P_4.1.19
-25
–
50
mA
–
P_4.1.20
Load current
| IL |
–
–
IL(LIM)
A
–
P_4.1.21
Power dissipation (DC)
PTOT
–
–
2
W
P_4.1.22
Maximum energy dissipation EAS
Single pulse
–
–
110
mJ
TA = 85 °C
TJ < 150 °C
IL(0) = 10 A
TJ(0) = 150 °C
VS = 13.5 V
P_4.1.23
VDS
–
–
41
V
–
P_4.1.26
Permanent short circuit
IN pin toggles
Input Pins
Voltage at INPUT pin
Current through INPUT pin
–
t < 2 min
Sense Pin
Voltage at IS pin
Current through IS pin
Power Stage
Voltage at power transistor
Data Sheet
PROFET™+ 12V
9
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
Table 2
Absolute Maximum Ratings (cont’d)1)
TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
–
P_4.1.27
Min.
Typ.
Max.
I GND
-20
-150
–
20
20
mA
TJ
TSTG
-40
–
150
°C
–
P_4.1.28
-55
–
150
°C
–
P_4.1.30
VESD
VESD
-2
–
2
kV
4)
HBM
P_4.1.31
-4
–
4
kV
4)
HBM
P_4.1.32
VESD
VESD
-500
–
500
V
5)
CDM
P_4.1.33
V
5)
CDM
P_4.1.34
Currents
Current through ground pin
t < 2 min
Temperatures
Junction temperature
Storage temperature
ESD Susceptibility
ESD susceptibility (all pins)
ESD susceptibility OUT Pin
vs. GND and VS connected
ESD susceptibility
ESD susceptibility pin
(corner pins)
-750
–
750
1) Not subject to production test. Specified by design.
2)EOL tests according to AECQ100-012. Threshold limit for short circuit failures: 100ppm. Please refer to the legal disclaimer
for short circuit capability on the page 53 of this document.
3) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001-2010
5) “CDM” ESDA STM5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
PROFET™+ 12V
10
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Nominal operating voltage
VNOM
VS(OP)
Extended operating voltage
Values
Min.
Typ.
Max.
8
13.5
18
5
–
28
Unit
Note /
Test Condition
Number
V
–
P_4.2.1
V
2)
VIN = 4.5 V
P_4.2.2
RL = 2 Ω
VDS < 0.5 V
See Figure 15
Minimum functional supply
voltage
VS(OP)_MIN
3.8
4.2
5
V
1)
VIN = 4.5 V
RL = 2 Ω
From IOUT = 0 A
P_4.2.3
to
VDS < 0.5 V;
See Figure 15
Undervoltage shutdown
VS(UV)
3
3.4
4.1
V
1)
VIN = 4.5 V
VDEN = 0 V
RL = 2 Ω
From VDS < 1 V;
to IOUT = 0 A
P_4.2.4
See Figure 15
See Figure 30
Undervoltage shutdown
hysteresis
VS(UV)_HYS
–
850
–
mV
2)
Operating current channel
active
IGND_1
–
5
9
mA
P_4.2.5
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 18 V
Standby current for whole
device with load (ambiente)
IS(OFF)
–
0.1
0.9
μA
–
P_4.2.13
See Figure 31
1)
VS = 18 V
P_4.2.7
VOUT = 0 V
VIN floating
VDEN floating
TJ ≤ 85 °C
See Figure 32
Maximum standby current for IS(OFF)_150
whole device with load
–
4
34
μA
VS = 18 V
VOUT = 0 V
VIN floating
VDEN floating
TJ = 150 °C
P_4.2.10
See Figure 32
Standby current for whole
device with load, diagnostic
active
IS(OFF_DEN)
–
0.6
–
mA
2)
VS = 18 V
VOUT = 0 V
VIN floating
VDEN = 5.5 V
P_4.2.8
1) Test at TJ = -40°C only
Data Sheet
PROFET™+ 12V
11
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
2) Not subject to production test. Specified by design.
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Table 4
Thermal Resistance
Parameter
Symbol
RthJS
RthJA
Junction to soldering point
Junction to ambient
Values
Min.
Typ.
Max.
–
5
–
–
30
–
Unit
Note /
Test Condition
Number
K/W
1)
P_4.3.1
K/W
1) 2)
P_4.3.2
1) Not subject to production test. Specified by design.
2)Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The
product (chip + package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70μm
Cu, 2 x 35 μm Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper
layer. Please refer to Figure 4 and Figure 5.
4.3.1
PCB set up
70µm
1.5mm
35µm
0.3mm
Figure 4
PCB 2 s2p .vsd
2s2p PCB Cross Section
Data Sheet
PROFET™+ 12V
12
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
PCB bottom view
PCB top view
1
14
2
13
3
12
COOLING
TAB
4
11
VS
5
10
6
9
7
8
thermique SO14.vsd
Figure 5
PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area
4.3.2
Thermal Impedance
100
Zth [K/W]
10
1
0,1
1s0p-footprint
1s0p-300mm²
1s0p-600mm²
2s2p
0,01
0,0001
0,001
0,01
0,1
1
Time [s]
Figure 6
10
100
1000
RTHJA_BTS5012 _1EKA.vsd
Typical Thermal Impedance. PCB set up according Figure 5
Data Sheet
PROFET™+ 12V
13
Rev. 2.0, 2012-04-17
BTS5012-1EKB
General Product Characteristics
80
75
70
65
Rthja [K /W]
60
55
50
1s0p
45
40
35
30
0
100
200
300
400
500
600
700
2
Area [mm ]
footprint
Figure 7
Typical Thermal Resistance. PCB set up 1s0p
Data Sheet
PROFET™+ 12V
14
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
5
Power Stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
20
50
40
RDS(ON)(mΩ)
RDS(ON)(mΩ)
15
10
30
20
5
10
0
0
-40
-10
20
50
80
Junction Temperature (Tj)
110
140
0
3
6
9
12
15
18
Supply Voltage VS (V)
Rdson_12.vsd
Figure 8
Typical ON-state Resistance
A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 9 shows the typical timing when switching a resistive load.
IN
V IN_H
VIN_L
t
VOUT
90% VS
dV/dt
dV/dt
ON
OFF
tON
tOFF_DELAY
70% VS
30% VS
tON_DELAY
tOFF
10% VS
t
Switching times .vsd
Figure 9
Switching a Resistive Load Timing
Data Sheet
PROFET™+ 12V
15
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
VDS
IN
LOGIC
IL
VBAT
GND
VIN
OUT
VOUT
L, RL
ZGND
Output clamp.svg
Figure 10
Output Clamp
IN
t
V OUT
VS
t
V S-VDS(AZ)
IL
t
Switching an inductance.vsd
Figure 11
Switching an Inductive Load Timing
Data Sheet
PROFET™+ 12V
16
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTS5012-1EKB. This energy can
be calculated with following equation:
L × V S – V DS ( AZ ) × ln ⎛ 1 – R L × I L ⎞ + I
E = V DS ( AZ ) × ------------------------------------------------------------------L
⎝
RL
RL
V S – V DS ( AZ )⎠
(1)
Following equation simplifies under the assumption of RL = 0 Ω.
VS
2
⎞
E = 1
--- × L × I × ⎛⎝ 1 – -------------------------------2
V S – V DS ( AZ )⎠
(2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
E AS (mJ)
1000
100
10
0
2
4
IL(A)
6
8
10
EAS12.vsd
Figure 12
Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 13.5V
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel
is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of
VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions are
available.
Data Sheet
PROFET™+ 12V
17
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
VBAT
VS
Gate driver
Device
logic
VINV
IL(INV)
OL
comp.
INV
Comp.
OUT
GND
ZGND
inverse current.svg
Figure 13
Inverse Current Circuitry
Data Sheet
PROFET™+ 12V
18
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
5.5
Electrical Characteristics Power Stage
Table 5
Electrical Characteristics: Power Stage
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
ON-state resistance per
channel
Symbol
RDS(ON)_150
Values
Min.
Typ.
Max.
15
21
24
Unit
Note /
Test Condition
Number
mΩ
IL = IL4 = 10 A
VIN = 4.5 V
TJ = 150 °C
P_5.5.1
TJ = 25 °C
P_5.5.21
TA = 85 °C
P_5.5.2
See Figure 8
ON-state resistance per
channel
RDS(ON)_25
–
12
–
mΩ
1)
Nominal load current
IL(NOM)
–
10
–
A
1)
Output voltage drop limitation VDS(NL)
at small load currents
–
7
25
mV
TJ < 150 °C
IL = IL0 = 50 mA
P_5.5.4
See Figure 33
Drain to source clamping
voltage
VDS(AZ) = [VS - VOUT]
VDS(AZ)
41
46
53
V
IDS = 20 mA
See Figure 11
See Figure 34
P_5.5.5
Output leakage current
TJ ≤ 85 °C
IL(OFF)
–
0.1
0.9
μA
2)
P_5.5.6
Output leakage current
TJ = 150 °C
IL(OFF)_150
–
3
34
μA
Inverse current capability
IL(INV)
dV/dtON
–
10
–
A
0.1
0.25
0.5
V/μs
Slew rate
70% to 30% VS
-dV/dtOFF
0.1
0.25
0.5
V/μs
Slew rate matching
dV/dtON - dV/dtOFF
ΔdV/dt
-0.15
0
0.15
V/μs
Turn-ON time to VOUT = 90% tON
30
100
250
μs
Turn-OFF time to VOUT = 10% tOFF
30
100
250
μs
P_5.5.15
-50
0
50
μs
P_5.5.16
Turn-ON time to VOUT = 10% tON_delay
10
60
120
μs
P_5.5.17
Turn-OFF time to VOUT = 90% tOFF_delay
10
60
120
μs
P_5.5.18
Slew rate
30% to 70% VS
VS
VIN floating
VOUT = 0 V
TJ ≤ 85 °C
VIN floating
VOUT = 0 V
TJ = 150 °C
1)
VS < VOUTx
RL = 2 Ω
VS = 13.5 V
See Figure 9
See Figure 35
See Figure 36
See Figure 37
See Figure 38
See Figure 39
P_5.5.8
P_5.5.9
P_5.5.11
P_5.5.12
P_5.5.13
P_5.5.14
VS
Turn-ON / OFF matching
tOFF - tON
ΔtSW
VS
VS
Data Sheet
PROFET™+ 12V
19
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Power Stage
Table 5
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Switch ON energy
Symbol
EON
Values
Min.
Typ.
Max.
–
1.6
–
Unit
Note /
Test Condition
Number
mJ
1)
P_5.5.19
RL = 2 Ω
VOUT = 90% VS
VS = 18 V
See Figure 40
Switch OFF energy
EOFF
–
1.7
–
mJ
1)
RL = 2 Ω
VOUT = 10% VS
VS = 18 V
P_5.5.20
See Figure 41
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
Data Sheet
PROFET™+ 12V
20
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pin.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTS5012-1EKB to ensure switching OFF of channel.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches
the situation.
ZGND is recommended to be resistor in parrallel to diode.
VS
ZIS(AZ)
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DEN
RDEN
IN
RIN
IOUT(GND)
LOGIC
OUT
ZDESD
GND
RIS
ZGND
Loss of ground protection single.svg
Figure 14
Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON.
If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the
supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch
is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM
range. Figure 15 sketches the undervoltage mechanism.
Data Sheet
PROFET™+ 12V
21
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
VOU T
undervoltage behavior . vsd
VS(U V)
Figure 15
Undervoltage Behavior
6.3
Overvoltage Protection
VS
VS(OP)
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16
shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power
transistor switches ON and the voltage across the logic section is clamped. As a result, the internal ground
potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin IN and DEN rises almost to that
potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to
overvoltage, the BTS5012-1EKB remains ON. In the case the BTS5012-1EKB was OFF, prior to overvoltage, the
power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output
transistor is still operational and follows the input. If the channel is in the ON state, parameters are no longer
guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the
short circuit robustness, as well as the maximum energy EAS capability. ZGND is recommended to be a diode and
resistor (1 kΩ).
ISOV
ZIS(AZ)
VS
IN1
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DEN
RDEN
IN
RIN
LOGIC
IN0
OUT
ZDESD
GND
RIS
ZGND
Figure 16
Overvoltage Protection with External Components
Data Sheet
PROFET™+ 12V
22
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a
typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDEN
and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used to
limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RIN = RSENSE
= 4.7 kΩ. ZGND is recommended to be 1 kΩ resistor in parallel to diode.
During reverse polarity, no protection functions are available.
VS
ZIS(AZ)
Micro controller
protection diodes
ZD(AZ)
IS
RSENSE
ZDS(AZ)
VDS(REV)
DEN
RDEN
IN
RIN
LOGIC
-VS(REV)
IN0
OUT
ZDESD
GND
ZGND
RIS
Reverse Polarity single.svg
Figure 17
Reverse Polarity Protection with External Components
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTS5012-1EKB offers
several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS. The current limitation value is VDS dependent. Figure 18 shows the behavior of
the current limitation as a function of the drain to source voltage.
Data Sheet
PROFET™+ 12V
23
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
80
IL5(SC)
70
Current Limit IL(SC) (A)
60
50
I L28(SC)
40
30
20
10
0
0
5
10
15
Drain source Voltage VDS (V)
Figure 18
Current Limitation (typical behavior)
6.5.2
Temperature Limitation in the Power DMOS
20
25
current limitation _12m.vsd
The channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of either
sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF latches
the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the situation. The
ΔTSTEP describes the device’s warming, due to the overcurrent in the channel.
A retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again, if the IN pin signal is still high (restart behavior).
Data Sheet
PROFET™+ 12V
24
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
IN
t
IL
LOAD CURRENT LIMITATION PHASE
IL(x)SC
LOAD CURRENT BELOW
LIMITATION PHASE
IL(NOM)
t
TDMOS
ΔTJ(SW)
TJ(SC)
ΔTJ(SW)
ΔTJ(SW)
TA
tsIS(FAULT)
t
ΔTSTEP
IIS
tsIS(OT_blank)
IIS(FAULT)
IL( NOM) / kILIS
0A
V DEN
t
tsIS(OFF)
0V
t
Hard start.vsd
Figure 19
Overload Protection
Note: For better understanding, the time scale is not linear. The real timing of this drawing is application dependant
and cannot be described.
Data Sheet
PROFET™+ 12V
25
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 6
Electrical Characteristics: Protection
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
–
0.1
–
mA
1) 2)
VS = 28 V
See Figure 14
P_6.6.1
200
650
700
mV
IL = - 4 A
TJ = 150 °C
P_6.6.2
Loss of Ground
Output leakage current while IOUT(GND)
GND disconnected
Reverse Polarity
Drain source diode voltage
during reverse polarity
VDS(REV)
See Figure 17
Overvoltage
Overvoltage protection
VS(AZ)
41
46
53
V
ISOV = 5 mA
P_6.6.3
See Figure 16
Overload Condition
Load current limitation
IL5(SC)
50
65
80
A
3)
VDS = 5 V
See Figure 18
See Figure 42
P_6.6.4
Load current limitation
IL28(SC)
–
40
–
A
2)
VDS = 28 V
See Figure 18
See Figure 43
P_6.6.7
Short circuit current during
over temperature toggling
IL(RMS)
–
6.9
–
A
2)
VIN = 4.5 V
RSHORT = 100 mΩ
LSHORT = 5 μH
P_6.6.12
Dynamic temperature
increase while switching
ΔTJ(SW)
–
80
–
K
4)
See Figure 19
P_6.6.8
Thermal shutdown
temperature
TJ(SC)
150
170 4)
200 4)
°C
5)
See Figure 19
P_6.6.10
20
–
K
5) 4)
Thermal shutdown hysteresis ΔTJ(SC)
–
1) All pins are disconnected except VS and OUT.
2)
3)
4)
5)
See Figure 19
P_6.6.11
Not Subject to production test, specified by design
Test at TJ = -40°C only
Functional test only
Test at TJ = +150°C only
Data Sheet
PROFET™+ 12V
26
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTS5012-1EKB provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sensed current of the channel is enabled.
7.1
IS Pin
The BTS5012-1EKB provides a SENSE current written IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 20. The accuracy of the sense current depends on temperature and load
current. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other
devices if these devices are using another battery feed. The consequence is that the unsupplied device would be
fed via the IS pin of the supplied device.
Vs
FAULT
IIS(FAULT)
IIS =
IL / kILIS
ZIS(AZ)
1
1
IS
0
0
DEN
Sense schematic single.svg
Figure 20
Diagnostic Block Diagram
Data Sheet
PROFET™+ 12V
27
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 7 gives a quick reference for the state of the IS pin during device operation.
Table 7
Sense Signal, Function of Operation Mode
Operation Mode
Input level Channel X
DEN
Normal operation
OFF
H
Output Level Diagnostic Output
Z
Z
Short circuit to GND
~ GND
Z
Overtemperature
Z
Z
Short circuit to VS
IIS(FAULT)
Current limitation
VS
< VOL(OFF)
> VOL(OFF)1)
~ VINV
~ VS
< VS
Short circuit to GND
~ GND
Overtemperature TJ(SW)
event
Z
IIS(FAULT)
IIS(FAULT)
IIS = IL / kILIS
IIS(FAULT)
IIS(FAULT)
IIS(FAULT)
Short circuit to VS
VS
~ VS2)
~ VINV
~ VS4)
IIS < IL / kILIS
IIS < IIS(OL)
IIS < IIS(OL)3)
IIS(OL) < IIS < IL / kILIS
Don’t care
Z
Open Load
Inverse current
Normal operation
ON
Open Load
Inverse current
Underload
Don’t care
1)
2)
3)
4)
Don’t care
L
Z
Stable with additional pull-up resistor.
The output current has to be smaller than IL(OL).
After maximum tINV.
The output current has to be higher than IL(OL).
Data Sheet
PROFET™+ 12V
28
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7.3
SENSE Signal in the Nominal Current Range
Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually, a
pull-down resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit
the power losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense
current, assuming an ideal kILIS factor value. The red curves shows the accuracy the device provide across full
temperature range, at a defined current.
3000
kILIS4
IIS =
2500
IL
Kilis ideal
IIS (µA)
2000
KILIS3
1500
KILIS2
1000
KILIS1
500
0
0
2
4
6
IL (A)
8
kilis for nom_load_2_12m.vsd
10
Figure 21
Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required around half the nominal current IL(NOM). To achieve this accuracy
requirement, a calibration on the application is possible. To avoid multiple calibration points at different load and
temperature conditions, the BTS5012-1EKB allows limited derating of the kILIS value, at a given point (IL3; TJ =
+25 °C). This derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the sense current,
assuming one calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The red lines indicate the derating on the parameter across temperature and voltage, assuming one calibration
point at nominal temperature and nominal battery voltage.
The grey lines indicate the kILIS accuracy without calibration.
Data Sheet
PROFET™+ 12V
29
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7000
6500
6000
5500
KILIS
5000
4500
4000
3500
3000
2500
2000
0
2
4
6
8
10
IL (A)
Figure 22
Improved Current Sense Accuracy with One Calibration Point
7.3.2
SENSE Signal Timing
Figure 23 shows the timing during settling and disabling of the sense.
VIN
t
IL
t ON
90% of
I L static
t
V DEN
t
IIS
TsIS(ON)
90% of
I IS static
tsIS(OFF)
TsIS(LC)
TsIS(ON)
current sense settling disabling time single.vsd
Figure 23
t
Current Sense Settling / Disabling Timing
Data Sheet
PROFET™+ 12V
30
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7.3.3
SENSE Signal in Open Load
7.3.3.1
Open Load in ON Diagnostic
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN is selected. In that case, the SENSE current
is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows the
SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the ideal
current sense ratio.
I IS
IIS(OL)
IL
IL(OL)
Sense for OL .vsd
Figure 24
Current Sense Ratio for Low Currents
7.3.3.2
Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc.... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x
is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched
to the IIS(FAULT).
An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.
Data Sheet
PROFET™+ 12V
31
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
Vbat
SOL
VS
IIS(FAULT)
ROL
OL
comp.
OUT
IS
ILOFF
Ileakage
GND
RIS
ZGND
VOL(OFF)
RPD
Rleakage
Open Load in OFF.svg
Figure 25
Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3
Open Load Diagnostic Timing
Figure 26 shows the timing during either Open load in ON or OFF condition. Please note that a delay tsIS(OT_BLANK)
has to be respected between the falling edge of the input and rising edge of the DEN, when applying an open load
in OFF diagnosis request, otherwise the voltage VOUT cannot be guaranteed and the diagnosis can be wrong.
Load is present
Open load
VIN
t
VOUT
VOL(OFF)
R DSON x IL
t
IOUT
VDEN
tsIS(OT_BLANK)
t
IIS
t sIS(FAULT_OL_OFF)
t sIS(LC)
90% of IIIS (FAULT) static
t
Error Settling Disabling Time .vsd
Figure 26
SENSE Signal in Open Load Timing
Data Sheet
PROFET™+ 12V
32
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7.3.4
SENSE Signal with OUT in Short Circuit to VS
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTS5012-1EKB, which can be recognized at the SENSE
signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case,
an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation.
Vbat
VS
IIS(FAULT)
VBAT
OL
comp.
IS
OUT
VOL(OFF)
GND
RIS
RSC_VS
ZGND
Short circuit to Vs.svg
Figure 27
Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal restart behavior, such that when the overtemperature or the exceed dynamic
temperature condition has disappeared, the DMOS is reactivated if the IN is still at logical level one. If the DEN
pin is activated, the IS pin is not toggling with the restart mechanism and remains to IIS(FAULT).
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the channel will indicate open load in OFF state and indicate open load in ON state.
Data Sheet
PROFET™+ 12V
33
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Function
Table 8
Electrical Characteristics: Diagnostics
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit Note /
Test Condition
Number
Load Condition Threshold for Diagnostic
Open load detection
threshold in OFF state
VS - VOL(OFF) 4
–
6
V
Open load detection
threshold in ON state
IL(OL)
17
40
mA
6.7
VIN = 0 V
VDEN = 4.5 V
VIN = VDEN = 4.5 V
IIS(OL) = 4 μA
P_7.5.1
P_7.5.2
See Figure 24
See Figure 45
Sense Pin
IS pin leakage current when
sense is disabled
IIS_(DIS)
–
–
1
μA
Sense signal saturation
voltage
VS - VIS
0
2.2
3
V
Sense signal maximum
current in fault condition
IIS(FAULT)
6
15
35
mA
(RANGE)
VIN = 4.5 V
VDEN = 0 V
IL = IL4 = 10 A
VIN = 0 V
VOUT = VS > 10 V
VDEN = 4.5 V
IIS = 6 mA
P_7.5.4
P_7.5.6
See Figure 46
VIS = VIN = VDSEL = 0 V P_7.5.7
VOUT = VS > 10 V
VDEN = 4.5 V
See Figure 20
See Figure 47
Sense pin maximum voltage
VIS(AZ)
41
46
53
V
IIS = 5 mA
P_7.5.3
See Figure 20
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio
IL0 = 50 mA
kILIS0
-50
4500
+50
%
Current sense ratio
IL1 = 0.5 A
kILIS1
-40
4000
+40
%
Current sense ratio
kILIS2
-22
4000
+22
%
P_7.5.10
kILIS3
-18
4000
+18
%
P_7.5.11
Current sense ratio
kILIS4
IL4 = 10 A
kILIS derating with current and ΔkILIS
-17
4000
+17
%
P_7.5.12
-8
0
+8
%
IL2 = 2 A
Current sense ratio
IL3 = 4 A
temperature
VIN = 4.5 V
VDEN = 4.5 V
P_7.5.8
See Figure 21
P_7.5.9
TJ = -40 °C; 150 °C
1)
kILIS3 versus kILIS2
See Figure 22
P_7.5.17
Diagnostic Timing in Normal Condition
Data Sheet
PROFET™+ 12V
34
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Diagnostic Functions
Table 8
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Current sense settling time to tsIS(ON)
kILIS function stable after
positive input slope on both
INput and DEN
Current sense settling time
with load current stable and
transition of the DEN
tsIS(ON_DEN)
Values
Min.
Typ.
Max.
Unit Note /
Test Condition
Number
–
–
250
μs
1)
VDEN = VIN = 0 to
4.5 V
VS = 13.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 4 A
See Figure 23
P_7.5.18
–
–
20
μs
VIN = 4.5 V
VDEN = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 4 A
P_7.5.19
See Figure 23
Current sense settling time to tsIS(LC)
–
–
50
μs
IIS stable after positive input
slope on current load
P_7.5.20
VIN =VDEN = 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL2 = 2 A to IL = IL3
= 4 A ; See Figure 23
Diagnostic Timing in Open Load Condition
Current sense settling time to tsIS(FAULT_OL_ –
IIS stable for open load
OFF)
detection in OFF state
–
200
μs
VIN = 0V
VDEN = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
VOUT = VS = 13.5 V
P_7.5.22
See Figure 26
Diagnostic Timing in Overload Condition
Current sense settling time to tsIS(FAULT)
IIS stable for overload
detection
–
–
250
μs
VIN = VDEN = 0 to 4.5 V P_7.5.24
RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V
See Figure 19
Current sense over
temperature blanking time
tsIS(OT_BLANK) –
350
–
μs
1)
VIN = VDEN = 4.5 V
P_7.5.32
RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V to 0 V
See Figure 19
Diagnostic disable time
DEN transition to
IIS < 50% IL /kILIS
tsIS(OFF)
–
–
50
μs
VIN = 4.5 V
VDEN = 4.5 V to 0 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 4 A
P_7.5.25
See Figure 23
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 12V
35
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage
thresholds. An implemented Schmidt trigger avoids any undefined state if the voltage on the input pin is slowly
increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input
circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In case the
pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via an
input resistor.
IN
GND
Figure 28
Input Pin Circuitry
8.2
DEN Pin
Input circuitry.vsd
The DEN pinenable and disable the diagnostic functionality of the device. The pin have the same structure as the
INput pin, please refer to Figure 28.
8.3
Input Pin Voltage
The IN and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set
by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and
depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Data Sheet
PROFET™+ 12V
36
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Input Pins
8.4
Electrical Characteristics
Table 9
Electrical Characteristics: Input Pins
VS = 8 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Note /
Test Condition
Number
INput Pins Characteristics
Low level input voltage range VIN(L)
-0.3
–
0.8
V
See Figure 48
P_8.4.1
High level input voltage range VIN(H)
2
–
6
V
See Figure 49
P_8.4.2
P_8.4.3
Input voltage hysteresis
Low level input current
High level input current
VIN(HYS)
IIN(L)
IIN(H)
–
250
–
mV
1)
1
10
25
μA
2
10
25
μA
VIN = 0.8 V
VIN = 5.5 V
See Figure 50
P_8.4.4
P_8.4.5
See Figure 51
DEN Pin
Low level input voltage range VDEN(L)
-0.3
–
0.8
V
–
P_8.4.6
High level input voltage range VDEN(H)
2
–
6
V
–
P_8.4.7
P_8.4.8
P_8.4.9
Input voltage hysteresis
Low level input current
High level input current
VDEN(HYS)
IDEN(L)
IDEN(H)
–
250
–
mV
1)
1
10
25
μA
2
10
25
μA
VDEN = 0.8 V
VDEN = 5.5 V
P_8.4.10
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 12V
37
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9
Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 13.5 V and 18 V, from -40°C to 160°C. When no dependency to voltage is seen, only one curve (13,5V) is
sketched.
9.1
General Product Characteristics
9.1.1
Minimum Functional Supply Voltage
P_4.2.3
5
4,9
4,8
4,7
VS(OP)_MIN (V)
4,6
4,5
4,4
4,3
4,2
4,1
4
3,9
3,8
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
Temperature TJ (°C)
120
130
140
150
minimum functional supply.vsd
Figure 29
Minimum Functional Supply Voltage VS(OP)_MIN = f(TJ)
9.1.2
Undervoltage Shutdown
P_4.2.4
4,1
4
3,9
3,8
VS(UV) (V)
3,7
3,6
3,5
3,4
3,3
3,2
3,1
3
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
Undervoltage_shutdown.vsd
Figure 30
Undervoltage Threshold VS(UV) = f(TJ)
Data Sheet
PROFET™+ 12V
38
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.1.3
Current Consumption Channel active
P_4.2.5
9
8V
13V
18V
IGND_1 (mA)
7
5
3
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
Current consumption one channel active.vsd
Figure 31
Current Consumption for Whole Device with Load. One Channel Active IGND_1 = f(TJ;VS)
9.1.4
Standby Current for Whole Device with Load
P_4.2.7, P_4.2.10
10
8V
13V
8
IS(OFF) (μA)
18V
6
4
2
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
Temperature TJ (°C)
80
90
100
110
120
130
140
150
Standby current for whole device with load.vsd
Figure 32
Standby Current for Whole Device with Load. IS(OFF) = f(TJ;VS)
9.2
Power Stage
9.2.1
Output Voltage Drop Limitation at Low Load Current
P_5.5.4
Data Sheet
PROFET™+ 12V
39
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
24
22
20
18
VDS(NL) (mV)
16
14
12
10
8
6
4
2
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
Output Voltage drop limitation at low load current.vsd
Figure 33
Output Voltage Drop Limitation at Low Load Current VDS(NL) = f(TJ) and VDS(NL) = f(VS)
9.2.2
Drain to Source Clamp Voltage
P_5.5.5
24
22
20
18
VDS(NL) (mV)
16
14
12
10
8
6
4
2
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
Output Voltage drop limitation at low load current.vsd
Figure 34
Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
Data Sheet
PROFET™+ 12V
40
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.2.3
Slew Rate at Turn ON
P_5.5.11
0,5
8V
13V
dV/dtON (V/μs)
0,4
18V
0,3
0,2
0,1
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
Temperature TJ (°C)
140
150
dV_dt_ON.vsd
Figure 35
Slew Rate at Turn ON dV/dtON = f(TJ;VS), RL = 2 Ω
9.2.4
Slew Rate at Turn OFF
P_5.5.12
0,5
8V
13V
dV/dtOFF (V/μs)
0,4
18V
0,3
0,2
0,1
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
Temperature TJ (°C)
130
140
150
dV_dt_OFF.vsd
Figure 36
Slew Rate at Turn OFF - dV/dtOFF = f(TJ;VS), RL = 2 Ω
9.2.5
Turn ON
P_5.5.14
250
8V
13V
200
18V
tON (μs)
150
100
50
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
tON_90.vsd
Figure 37
Turn ON tON = f(TJ;VS), RL = 2 Ω
Data Sheet
PROFET™+ 12V
41
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.2.6
Turn OFF
P_5.5.11
240
220
8V
200
13V
180
18V
tOFF (μs)
160
140
120
100
80
60
40
20
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110 120 130 140 150
Temperature TJ (°C)
tOFF_10.vsd
Figure 38
Turn OFF tOFF = f(TJ;VS), RL = 2 Ω
9.2.7
Turn ON / OFF matching
P_5.5.16
50
40
8V
30
13V
18V
20
'tSW (μs)
10
0
-10
-20
-30
-40
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Temperature TJ (°C)
delta_t_SW_OFF_ON.vsd
Figure 39
Turn ON / OFF matching ΔtSW = f(TJ;VS), RL = 2 Ω
Data Sheet
PROFET™+ 12V
42
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.2.8
Switch ON Energy
Switch ON Energy (mJ)
P_5.5.19
2,1
2
1,9
1,8
1,7
1,6
1,5
1,4
1,3
1,2
1,1
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
18V
13,5V
8V
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110 120 130 140 150
Temperature TJ (°C)
Figure 40
Switch ON Energy EON = f(TJ;VS), RL = 2 Ω
9.2.9
Switch OFF Energy
E_ON.vsd
Switch OFF Energy (mJ)
P_5.5.20
2,1
2
1,9
1,8
1,7
1,6
1,5
1,4
1,3
1,2
1,1
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
18V
13,5V
8V
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature TJ (°C)
Figure 41
100
110
120
130
140
150
E_OFF.vsd
Switch OFF Energy EOFF = f(TJ;VS), RL = 2 Ω
Data Sheet
PROFET™+ 12V
43
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.3
Protection Functions
9.3.1
Overload Condition in the Low Voltage Area
P_6.6.4
80
8V
75
13V
18V
IL5(SC) (A)
70
65
60
55
50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature TJ (°C)
100
110
120
130
140
150
Current limitation low voltage.vsd
Figure 42
Overload Condition in the Low Voltage Area IL5(SC) = f(TJ;VS)
9.3.2
Overload Condition in the High Voltage Area
P_6.6.7
50
8V
45
13V
18V
IL28(SC) (A)
40
35
30
25
20
-40
-30
-20
-10
0
10
20
30
40
50
60
70
Temperature TJ (°C)
Figure 43
80
90
100 110 120 130 140 150
Current limitation high voltage.vsd
Overload Condition in the High Voltage Area IL28(SC) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
44
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.4
Diagnostic Mechanism
9.4.1
Current Sense at no Load
Current Sense at no load : IL = (μA)
3
8V
13,5V
18V
2,5
2
1,5
1
0,5
0
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Temperature TJ (°C)
IIS_0current.vsd
Figure 44
Current Sense at no Load IIS = f(TJ;VS), IL = 0
9.4.2
Open Load Detection Threshold in ON State
P_7.5.2
43
41
39
37
35
33
IL(OL) (mA)
31
29
27
25
23
21
19
17
15
13
11
9
7
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Temperature TJ (°C)
Figure 45
90
100
110
120
130
140
150
IL_OL.vsd
Open Load Detection ON State Threshold IL(OL) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
45
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.4.3
Sense Signal Saturation Voltage
P_7.5.6
3
8V
VIS(RANGE) (V)
13V
18V
2
1
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
Temperature TJ (°C)
110
120
130
140
150
VIS_RANGE.vsd
Figure 46
Sense Signal Saturation Voltage VS - VIS(RANGE) = f(TJ;VS)
9.4.4
Sense Signal maximum Current
P_7.5.7
34
32
30
28
IIS(FAULT) (mA)
26
24
22
20
18
16
14
12
10
8
6
-40
-30
-20
-10
0
10
20
30
40
50
60
70
Temperature TJ (°C)
Figure 47
80
90
100
110
120
130
140
150
IIS_FAULT.vsd
Sense Signal Maximum Current in Fault Condition IIS(FAULT) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
46
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.5
Input Pins
9.5.1
Input Voltage Threshold ON to OFF
P_8.4.1
2
I_IN(L) @ 8V
I_IN(L) @ 13.5V
I_IN(L) @ 18V
V_INH(L) (V)
1,5
1
0,5
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_low_voltage.vsd
Figure 48
Input Voltage Threshold VIN(L) = f(TJ;VS)
9.5.2
Input Voltage Threshold OFF to ON
P_8.4.2
2
V_INH(H) (V)
1,5
1
0,5
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_high_voltage.vsd
Figure 49
Input Voltage Threshold VIN(H) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
47
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Characterization Results
9.5.3
Input Voltage Hysteresis
P_8.4.3
400
V_IN(HYS) @ 8V
V_IN(HYS) 13.5V
V_IN(HYS) @ 18V
V_IN(HYS) (mV)
300
200
100
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_voltage_hysteresis.vsd
Figure 50
Input Voltage Hysteresis VIN(HYS) = f(TJ;VS)
9.5.4
Input Current High Level
P_8.4.5
25
I_INH(H) (µA)
20
15
10
5
0
-40
0
40
80
Junction Temp (°C)
Figure 51
120
160
Input_pin_high_current.vsd
Input Current High Level IIN(H) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
48
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Application Information
10
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
R/L cable
T1
Z2
VDD
CVS
ROL
Vs
Vdd
OUT
IN0
RIN
R/L cable
OUT0
COUT0
RPD
OUT
DEN
RDEN
Micro controller
RA/D
A/D
IS
RSENSE
GND
CSENSE
Z1
D
RIS
RGND
Vss
Figure 52
Application Diagram with BTS5012-1EKB
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
Table 10
Bill of Material
Reference
Value
Purpose
RIN
4.7 kΩ
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTS5012-1EKB channels OFF during loss of ground
RDEN
4.7 kΩ
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTS5012-1EKB channels OFF during loss of ground
RPD
47 kΩ
Polarization of the output
Improve BTS5012-1EKB immunity to electromagnetic noise
RIS
RSENSE
1.2 kΩ
Sense resistor
4.7 kΩ
Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
ROL
1.5 kΩ
Ensure polarization of the BTS5012-1EKB output during open load in OFF
diagnostic
RA/D
4.7 kΩ
Protection of the micro controller during overvoltage, reverse polarity
Data Sheet
PROFET™+ 12V
49
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Application Information
Table 10
Bill of Material (cont’d)
Reference
Value
Purpose
D
BAS21
Protection of the BTS5012-1EKB during reverse polarity
RGND
Z1
Z2
1 kΩ
To keep the device GND at a stable potential during clamping
7 V Zener diode Protection of the micro controller during overvoltage
36 V Zener
diode
Protection of the device during overvoltage
T1
CSENSE
CVS
COUT0
BC 807
Switch the battery voltage for open load in OFF diagnostic
100 pF
Sense signal filtering
100 nF
Filtering of the voltage spikes on the battery line
4.7 nF
Protection of the BTS5012-1EKB during ESD and BCI
10.1
Further Application Information
•
•
•
Please contact us to get the pin FMEA
Existing App. Notes
For further information you may visit http://www.infineon.com/profet
Data Sheet
PROFET™+ 12V
50
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Package Outlines
11
Package Outlines
0.35 x 45˚
0.41±0.09
0˚...8˚
C
2)
0.2
M
0.19 +0.06
0.1 C D 2x
8˚ MAX.
0.08 C
Seating Plane
C A-B D 14x
0˚...8˚
0.64 ±0.25
6 ±0.2
D
0.2
8˚ MAX.
1.27
1.7 MAX.
0.2 -0.1
8˚ MAX.
Stand Off
(1.47)
0.1+0
-0.1
3.9 ±0.11)
M
D
Bottom View
14
8
1
1
7
14
7
8
2.65 ±0.1
6.4 ±0.1
A
B
8.65 ±0.1
Index Marking
0.1 C A-B 2x
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.13 max.
3) JEDEC reference MS-012 variation BB
Figure 53
GPS01207
PG-DSO-14-47 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
PROFET™+ 12V
51
Rev. 2.0, 2012-04-17
BTS5012-1EKB
Revision History
12
Revision History
Version
Date
2.0
2012-04-17
Data Sheet
PROFET™+ 12V
Parameter
Changes
Creation of the Data Sheet
52
Rev. 2.0, 2012-04-17
Edition 2012-04-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Legal Disclaimer for short-circuit capability
Infineon disclaims any warranties and liabilities, whether expressed nor implied, for any short-circuit failures below
the threshold limit.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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