BTS6142DAUMA1

Data Sheet, V1.1, February 2007 BTS 6142D Smart High-Side Power Switch PROFET One Channel, 12 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 6142D Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 Pin Assignment BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.2.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2.3 Reverse Polarity Protection - ReversaveTM . . . . . . . . . . . . . . . . . . . . . . 18 4.2.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 4.3.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5 Package Outlines BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Data Sheet 2 V1.1, 2007-02-28 Smart High-Side Power Switch PROFET BTS 6142D Product Summary PG-TO252-5-11 The BTS 6142D is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. Operating voltage Vbb(on) 5.5 .. 24 V Over-voltage protection VON(CL) RDS(ON) 39 V 7A Current limitation IL(nom) IL(ISO) IL6(SC) Stand-by current for whole device with load Ibb(OFF) 6 µA On-State resistance Nominal load current Load current (ISO) 12 mΩ 27 A 50 A Basic Features • • • • • • • Very low standby current Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC qualified Type Package BTS 6142D PG-TO252-5-11 Data Sheet 3 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protective Functions • • • • • • • • • • ReverSave™, channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Over-load protection Multi-step current limitation Thermal shutdown with restart Over-voltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD) Diagnostic Functions • Proportional load current sense (with defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown) • Open load detection in ON-state by load current sense Applications • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads • All types of resistive, inductive and capacitive loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Overview 1 Overview The BTS 6142D is a one channel high-side power switch (12 mΩ) in PG-TO252-5-11 power package providing embedded protective functions including ReverSaveTM. ReverSaveTM is a protection feature that causes the power transistors to switch on in case of reverse polarity. As a result, the power dissipation is reduced. The BTS 6142D has a current controlled input and offers a diagnostic feedback with load current sense. The design is based on Smart SIPMOS chip on chip technology. 1.1 Block Diagram logic IC Rbb base chip Vbb voltage sensor IIN VIS VIN IS ESD IN driver logic I IS gate control & charge pump T clamp for inductive load current limitation load current sense forward voltage drop detection RIS OUT IL LOAD over temperature Overview .emf Figure 1 Data Sheet Block Diagram 5 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Overview 1.2 Terms Following figure shows all terms used in this data sheet. Vbb VbIN V bIS Ibb IIN IN VIN VON VBB BTS 6142D RIN IIS V IS IS OUT IL VOUT RIS Terms.emf Figure 2 Data Sheet Terms 6 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Pin Configuration 2 Pin Configuration 2.1 Pin Assignment BTS 6142D TAB IN Vbb IS OUT 3 4 5 OUT 2 1 Vbb TO252-5 .emf Figure 3 Pin Configuration PG-TO252-5-11 2.2 Pin Definitions and Functions Pin Symbol I/O Function 1 OUT O Output; output to the load; pin 1 and 5 must be externally shorted.1) 2 IN I Input; activates the power switch if shorted to ground. 3, Tab Vbb - Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted. 4 IS O Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided (see Table 1 "Truth Table" on Page 23). 5 OUT O Output; output to the load; pin 1 and 5 must be externally shorted.1) 1) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. Data Sheet 7 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Electrical Characteristics 3 Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Supply Voltage 3.1.1 Supply voltage 3.1.2 3.1.3 Vbb -16 38 V - Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj = -40°C .. 150°C) 1) 0 24 V − Supply Voltage for Load Dump Vbb(LD) protection 2) - 45 V RI = 2 Ω RL = 1.5 Ω -16 63 V - -140 15 mA - Logic Pins 3.1.4 Voltage at input pin 3.1.5 Current through input pin 3.1.6 Voltage at current sense pin 3.1.7 Current through sense pin 3.1.8 Input voltage slew rate 3) Vb,IN IIN Vb,IS IIS dVbIN/dt -16 56 V - -140 15 mA - -20 20 V/µs - Power Stages 3.1.9 Load current 4) 3.1.10 Maximum energy dissipation per channel (single pulse) 3.1.11 Total power dissipation (DC) for whole device IL EAS - ILx(SC) A - 0.25 J Ptot - 50 W Tj Tstg -40 150 °C - -55 150 °C - - IL(0) = 20 A Tj(0) = 150°C TC = 85 °C Tj ≤ 150 °C Temperatures 3.1.12 Junction temperature 3.1.13 Storage temperature Data Sheet 8 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Electrical Characteristics Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. max. -3 3 Unit Test Conditions ESD Susceptibility 3.1.14 ESD susceptibility HBM VESD kV according to EIA/JESD 22-A 114B 1) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13. 2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator 3) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤-16V. See also Figure 14. 4) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. Data Sheet 9 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages 4 Block Description and Electrical Characteristics 4.1 Power Stages The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Input Circuit Figure 4 shows the input circuit of the BTS 6142D. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. VbIN Rbb IIN IN Vbb VZ,IN I VIN Input.emf Figure 4 Input Circuit A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current IIN is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission. IIN VOUT tON tOFF t 90% 50% dV/dtON dV/dtOFF 25% 10% t Figure 5 Data Sheet SwitchOn.emf Switching a Load (resistive) 10 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages 4.1.2 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Section 4.2.3.  5 21 Vbb = 12 V  5 21 W\S  PΩ  PΩ     Tj = 25°C W\S       ƒ&    7M Figure 6     9   9 EE Typical On-State Resistance At small load currents the resistance is artificially increased to improve current sense accuracy. Therefore the forward voltage drop VON at small load currents is no more proportional to the load current IL , but is controlled by an internal “two level controller” to remain clamped to a defined value VON(NL). Figure 7 shows the dependency for a typical device. Data Sheet 11 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages  Vbb = 12 V Tj = 25°C W\S 9 21  9  9 21a, /  9 21≥9 211/        $   ,/ Figure 7 4.1.3 Typical Output Voltage Drop Limitation Output Inductive Clamp When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). V bb VON VBB IL OUT V OUT L, RL OutputClamp .emf Figure 8 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load inductance is limited. Data Sheet 12 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages V OUT ON OFF Vbb t VON(CL) V OUT(CL) IL t Figure 9 InductiveLoad.emf Switching an Inductance Maximum Load Inductance While de energizing inductive loads, energy has to be dissipated in the BTS 6142D. This energy can be calculated via the following equation: V bb – V ON ( CL )   RL ⋅ IL L E = V ON ( CL ) ⋅ ---------------------------------------- + I L ⋅ -----⋅ ln  1 + -------------------------------------RL R V – V  L ON(CL) bb In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used: V ON(CL) 2 1 E = --- LI L ⋅ -------------------------------------2 V ON(CL) – V bb The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed inductance at Vbb=12V. Data Sheet 13 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages Vbb = 12 V Tj(o) ≤ 150°C  /  P+      $  ,/ Figure 10 Data Sheet Maximum load inductance for single pulse, Tj,Start = 150°C 14 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages 4.1.4 Electrical Characteristics Vbb = 12 V, Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions 38 V min. typ. max. 5.5 - General 4.1.1 Operating voltage Vbb 4.1.2 Undervoltage shutdown 1) VbIN(u) - 2.5 3.5 V VIN = 0 V Tj = -40..150 °C - 4.1.3 Undervoltage restart of charge pump Vbb(ucp) - 4 5.5 V - 4.1.4 Operating current - 1.4 2.2 mA 4.1.5 Stand-by current Tj = -40 °C, Tj = 25 °C Tj ≤ 120 °C 1) Tj = 150 °C IIN Ibb(OFF) Tj = -40..150 °C IIN = 0 A - 3 3 9 6 6 16 µA Input characteristics 4.1.6 Input current for turn-on IIN(on) - 1.4 2.2 mA 4.1.7 Input current for turn-off IIN(off) - - 30 µA VbIN≥Vbb(ucp)-VIN, Tj = -40 … 150 °C Tj = -40 … 150 °C mΩ VIN=0V, IL=7.5A, - 10 17 12 22 12 22 17 29 - 30 65 4.1.10 Nominal load current IL(nom) (Tab to pin1 & 5) 2) 3) 7 8.5 IL(ISO) 27 33 Output characteristics 4.1.8 4.1.9 On-state resistance RDS(ON) Tj=25°C Tj=150°C Vbb=5.5V, Tj=25°C Vbb=5.5V, Tj=150°C Output voltage drop VON(NL) limitation at small load currents ISO load current (Tab to pin 1 & 5) 3) Data Sheet 15 (Tab to pin 1 and 5) mV Tj = -40..150 °C - A - A Ta = 85 °C VON ≤ 0.5 V, Tj ≤ 150 °C Tc = 85 °C VON ≤ 0.5 V, Tj ≤ 150 °C V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Power Stages Vbb = 12 V, Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol VON(CL) 4.1.11 Output clamp 4.1.12 Inverse current output -VON(inv) voltage drop 1) 4) (Tab to pin 1 and 5) Tj = 25 °C Tj = 150 °C Limit Values min. typ. max. 39 42 - Unit Test Conditions V IL = 40 mA IL = -7.5 A, RIS = 1 kΩ mV - 800 600 - Timings 4.1.13 Turn-on time to 90% Vbb tON - 250 600 µs 4.1.14 Turn-off time to 10% Vbb tOFF - 250 600 µs - 1 - ms 4.1.15 Turn-on delay after td(inv) inverse operation 1) VIN(inv) = VIN(fwd) = 0 V RL = 2.2 Ω, Tj = -40 … 150 °C RL = 2.2 Ω, Tj = -40 … 150 °C Vbb > VOUT RL = 2.2 Ω, Tj = -40 … 150 °C RL = 2.2 Ω, Tj = -40 … 150 °C 4.1.16 Slew rate On 25% to 50% Vbb dV/ dtON - 0.3 0.7 V/µs 4.1.17 Slew rate Off 50% to 25% Vbb -dV/ dtOFF - 0.3 0.7 V/µs Rthjc Rthja - - 1.3 K/W - K/W - - 80 45 55 Thermal Resistance 4.1.18 Junction to case 1) 1) 4.1.19 Junction to ambient free air device on PCB 2) 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth 4) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode. A sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached. Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Data Sheet 16 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions 4.2 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 4.2.1 Over-Load Protection The load current IL is limited by the device itself in case of over-load or short circuit to ground. There are multiple steps of current limitation ILx(SC) which are selected automatically depending on the voltage drop VON across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a typical device.  , /6& Tj = 25°C $  W\S         9 216& Figure 11  9  9 21 Typical Current Limitation Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies. Whenever the resulting voltage drop VON exceeds the short circuit detection threshold VON(SC), the device will switch off immediately and latch until being reset via the input. The VON(SC) detection functionality is activated, when VbIN>10V typ. and the blanking time td(SC1) expired after switch on. In the event that either the short circuit detection via VON(SC) is not activated or that the on chip temperature sensor senses over-temperature before the blanking time td(SC1) expired, the device switches off resulting from over-temperature detection. After cooling down with thermal hysteresis, the devices switches on again. Please refer to Figure 12 for details. Data Sheet 17 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions VON(SC) detection Over temperature detection I IN IIN t VON VONx > VON(SC) t ILx(SC) IL t IL t ϑj tm td(SC1) thermal hysteresis t t Over_Temp .emf V_ON_detect.emf Figure 12 4.2.2 Overload Behavior Short circuit impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance.  / 6& 5uH 10mΩ Vbb IN OUT PROFET 9 EE 9 X+  RSC IS  LO AD Vbb SHORT CIRCUIT 9 EE 9 9 EE 9 LSC   short_circuit.emf   PΩ   5 6& Figure 13 4.2.3 Short circuit Reverse Polarity Protection - ReversaveTM The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReversaveTM functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated VGS≈VRbb. Please refer to Figure 14 for details. Data Sheet 18 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions -Vbb -IIN IS D RIS -IL -IIS signal ground Figure 14 Vbb LOAD IN RIN Rbb Logic IRbb power ground Reverse.emf Reverse battery protection Additional power is dissipated by the integrated Rbb resistor. Use following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode. 2 2 P diss(rev) ≈ R ON(rev) ⋅ I L + R bb ⋅ IRbb For reverse battery voltages up to Vbb 16V an additional resistor RIN is recommended. For reverse battery voltages higher then Vbb >16 the overall current through Rbb should be about 80mA. 1 - + -------1 - = ----------------------------0,08A -------V bb – 12V RIN R IS Note: No protection mechanism is active during reverse polarity. The IC logic is not functional. Data Sheet 19 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions 4.2.4 Over-Voltage Protection Beside the output clamp for the power stage as described in Section 4.1.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details. Logic IN IS Figure 15 4.2.5 Vbb VZ,IS VZ,IN Rbb OUT OverVoltage .emf Over-Voltage Protection Loss of Ground Protection In case of complete loss of the device ground connections the BTS 6142D securely changes to or remains in off state. 4.2.6 Loss of Vbb Protection In case of complete loss of Vbb the BTS 6142D remains in off state. In case of loss of Vbb connection with charged inductive loads a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 39 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to 120 mA. Please refer to Figure 16 for details. Vbb IS R bb VD Logic IN Vbb Vbb VZb IN IS Vbb Logic Rbb VD R IN RIS inductive LOAD RIN VZL Vbb_disconnect_A.emf Figure 16 Data Sheet R IS inductive LOAD Vbb_disconnect_B.emf Loss of Vbb 20 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions 4.2.7 Electrical Characteristics Vbb = 12 V, Tj = +25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. typ. max. Load current limitation1) 2) IL6(SC) Tj = -40 °C Tj = +25 °C Tj = +150 °C 50 110 100 75 160 - Load current limitation 2) IL12(SC) Tj = -40 °C Tj = +25 °C Tj = +150 °C 45 90 80 70 120 - Load current limitation1) 2) IL18(SC) Tj = -40 °C Tj = +25 °C Tj = +150 °C 30 60 60 50 90 - Load current limitation 2) IL24(SC) Tj = -40 °C Tj = +25 °C Tj = +150 °C - 40 40 35 - Load current limitation1) 2) IL30(SC) Tj = -40 °C Tj = +25 °C Tj = +150 °C - 25 25 25 4.5 Unit Test Conditions A VON = 6 V, Over-Load Protection 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 A 3.5 4.2.7 Short circuit shutdown td(SC1) delay after input current pos. slope3) 200 650 4.2.8 Thermal shut down temperature 150 165 4.2.9 Thermal hysteresis 1) ∆Tj Data Sheet VON = 24 V, tm = 170 µs, (Tab to pin 1 and 5) A 2.5 VON = 18 V, (Tab to pin 1 and 5) A Short circuit shutdown VON(SC) detection voltage 1) VON = 12 V, tm = 170 µs, (Tab to pin 1 and 5) A 4.2.6 Tj(SC) (Tab to pin 1 and 5) VON = 30 V, (Tab to pin 1 and 5) V 1200 µs VbIN > 10 V typ. VON > VON(SC), Tj = -40 … 150 °C - °C - - K - 1) - 21 10 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Protection Functions Vbb = 12 V, Tj = +25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions mΩ VIN = 0, IL = -7.5A, RIS = 1 kΩ, max. Reverse Battery 4.2.10 On-State resistance RON(rev) in case of reverse polarity Vbb=-8V, Tj=25°C 1) Vbb=-8V, Tj=150°C 1) Vbb=-12V, Tj=25°C Vbb=-12V, Tj=150°C 4.2.11 Integrated resistor in Vbb line Rbb - 12 20 12 18 16 27 15 24 - 100 150 (pin 1 and 5 to TAB) Ω - V Ibb = 15 mA, Tj = -40 … 150 °C Over-Voltage 4.2.12 Over-voltage protection Input pin Sense pin VZ VZ,IN VZ,IS 63 67 - V 56 61 - V 1) Not subject to production test, specified by design 2) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12. 3) min. value valid only if input “off-signal” time exceeds 30 µs Data Sheet 22 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Diagnosis 4.3 Diagnosis For diagnosis purpose, the BTS 6142D provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as Vb,IS>5V. The ratio of the output current is defined as kILIS=IL/IIS. During switch-on no current is provided, until the forward voltage drops below VON1V typ.), current limit or over-temperature switch off. The pin IS provides no current during open load in ON, de-energisation of inductive loads and inverse current mode. Vb,IS Vbb R bb IIS VZ,IS I IS(fault) IS VIS R IS Sense.emf Figure 17 Block Diagram: Diagnosis Table 1 Truth Table Parameter Input Current Level Output Level Current Sense IIS Normal operation L1) H1) L H ≈ 0 (IIS(LL)) nominal Overload L H L H ≈ 0 (IIS(LL)) Short circuit to GND L H L L Overtemperature L H L L Short circuit to Vbb L H H H Open load Data Sheet L H 1) Z H 23 IIS,fault ≈ 0 (IIS(LL)) IIS,fault ≈ 0 (IIS(LL)) IIS,fault ≈ 0 (IIS(LL)) < nominal2) ≈ 0 (IIS(LL)) ≈ 0 (IIS(LH)) V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Diagnosis 1) H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit 2) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to Figure 18 for details. A typical resistor RIS of 1 kΩ is recommended.  N ,/,6  PD[ W\S  PLQ      , /PLQ Figure 18 Current sense ratio    $  ,/ kILIS1) Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ON-state can be found in Figure 19. Note: During operation at low load current and at activated forward voltage drop limitation the “two level control” of VON(NL) can cause a sense current ripple synchronous to the “two level control” of VON(NL) . The ripple frequency increases at reduced load currents. 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.1 (Position 4.3.1). Data Sheet 24 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Diagnosis IIN normal operation VON VON1V typ. IL2 IIS2 IIS(lim) I IS(fault) t VON t IL t short VON>VON(SC) over-temperature t I Lx(SC) IIS IIS(fault) t VON 1 V, typ. Tj = -40 … 150 °C IIN = 0 4.3.5 Current sense offset current IIS(LH) – 0.1 1 µA VIN = 0, IL ≤ 0 4.3.6 Minimum load current IL(MIN) for sense functionality 0.5 – – A 4.3.7 Current sense settling tson(IS) time to 90% IIS_stat.1) – 350 700 µs 4.3.8 Current sense settling tslc(IS) time to 90% IIS_stat.1) – 50 100 µs 4.3.9 Fault-Sense signal tdelay(fault) delay after input current positive slope 200 650 1200 µs VIN = 0, Tj = -40 … 150 °C IL = 0 20 A Tj = -40 … 150 °C IL = 10 20 A Tj = -40 … 150 °C VON > 1 V, typ. Tj = -40 … 150 °C 1) Not subject to production test, specified by design Data Sheet 26 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Package Outlines BTS 6142D 5 Package Outlines BTS 6142D PG-TO252-5-11 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 27 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Revision History 6 Revision History Version Date Changes V1.1 07-02-28 RoHS compliant version of BTS 6142D changed IFX logo page 3: Ordering code removed page 3: “AEC qualified” and “RoHS” logos added page 3, page 27: “AEC Stress Test Qualification” and “Green Product (RoHS compliant)” added to feature list page 3, page 27: Change to RoHS compliant package PGTO252-5-11 Legal disclaimer updated V1.0 Data Sheet 05-10-25 initial version of Final Data Sheet 28 V1.1, 2007-02-28 Smart High-Side Power Switch BTS 6142D Edition 2007-02-28 Published by Infineon Technologies AG, 81726 Munich, Germany © Infineon Technologies AG 3/1/07. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 29 V1.1, 2007-02-28 http://www.infineon.com Published by Infineon Technologies AG