BTS6144P

PROFET® Data sheet BTS 6144B/P Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Loss of ground protection • Loss of Vbb protection (with external diode for charged inductive loads) • Very low standby current • Fast demagnetization of inductive loads • Electrostatic discharge (ESD) protection • Optimized static electromagnetic compatibility (EMC) Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Vbb(on) 5.5 ... 38 RON IL(nom) IL(ISO) IL12(SC) Package TO 220-7-180 V 9 mΩ 9.5 A 37.5 A 90 A TO 220-7-230 7 1 S M D Diagnostic Function • Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Voltage sensor Overvoltage Current Gate protection limit protection Charge pump Level shifter Rectifier 3 IN Logic ESD I IN Limit for unclamped ind. loads Output Voltage detection + V bb bb OUT 1, 2, 6, 7 IL Current Sense Load Temperature sensor IS I IS PROFET Load GND 5 VIN V IS  R IS Logic GND Infineon Technologies AG Page 1 of 16 2003-Oct-01 Data sheet BTS 6144B/P Pin Symbol Function 1; 2 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted* . 3 IN I Input; activates the power switch if shorted to ground. 4; Tab Vbb + Supply Voltage; positive power supply voltage; tab and pin4 are internally shorted. 5 IS S Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) 6; 7 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted* . *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1Ω, td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation m3) single pulse, IL = 20 A, Vbb= 12V Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Current through input pin (DC) Current through current sense pin (DC) Symbol Vbb Vbb VLoad dump2) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 81 A °C 0.4 3.0 J kV +15, -120 +15, -120 mA self-limited 20 V/µs EAS VESD IIN IIS 38 30 45 Unit V V V W see internal circuit diagrams page 9 Input voltage slew rate Vbb ≤ 16V : dVbIN / dt Vbb > 16V 4): 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. Infineon Technologies AG Page 2 of 16 2003-Oct-01 Data sheet BTS 6144B/P Thermal Characteristics Parameter and Conditions Symbol chip - case: RthJC 5) junction - ambient (free air): RthJA SMD version, device on PCB 6): Thermal resistance min ---- Values typ max 0.7 0.8 60 -33 40 Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,2,6,7) VIN= 0, Vbb= 5.5V, IL = 10 A Tj=25 °C: RON Tj=150 °C: Tj=25 °C: Tj=150 °C: Output voltage drop limitation at small load currents (Tab to pin 1,2,6,7) Tj=-40...150 °C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C SMD 6), VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 2.2 Ω, Tj=-40...150 °C Slew rate on 25 to 50% VOUT, RL = 2.2 Ω, Tj=-40...150 °C Slew rate off 50 to 25% VOUT, RL = 2.2 Ω, Tj=-40...150 °C --- 9.5 17 13 22 ---- 7 13 30 9 16 60 37.5 9.5 --- 48 12 300 300 --550 600 dV /dton -- 0.2 0.35 V/µs -dV/dtoff -- 0.2 0.45 V/µs VIN= 0, Vbb= 12V, IL = 10 A 5) 6) VON(NL) IL(ISO) IL(nom) ton toff mΩ mV A µs Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions Symbol Values min typ max Vbb(on) VbIN(u) Vbb(ucp) VZ,IN 5.5 --63 -2.5 4 67 38 3.5 5.5 -- V V V V Ibb(off) --- 3 6 6 14 µA -Vbb -- -- 16 V --- 8.5 13 12 18 mΩ --- 8 13 11 19 -- 100 150 Ω --- 700 300 --- mV -- 1 -- ms at Tj= 25, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage (VIN=0) Tj=-40...150 °C: Undervoltage shutdown 7) 8) Undervoltage restart of charge pump Overvoltage protection 9) Ibb=15 mA Tj=-40...+150°C: Standby current Tj=-40...+120°C: IIN=0 Tj=150°C: Unit Reverse Battery Reverse battery voltage 10) On-state resistance (pin 4, Tab to pin 1,2,6,7) Vbb= - 8V, VIN= 0, IL = -10 A, RIS = 1 kΩ, 8) Tj=25 °C: RON(rev) Tj=150 °C: Vbb= -12V, VIN= 0, IL = -10 A, RIS = 1 kΩ, Tj=25 °C: Tj=150 °C: Integrated resistor in Vbb line Rbb Inverse Operation 11) Output voltage drop (pin 4, Tab to pin 1,2,6,7) 8) IL = -10 A, RIS = 1 kΩ, Tj=25 °C: -VON(inv) IL = -10 A, RIS = 1 kΩ, Tj=150 °C: Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) 7) VbIN=Vbb-VIN see diagram page 14. not subject to production test, specified by design 9) See also VON(CL) in circuit diagram page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode. 8) Infineon Technologies AG Page 4 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions Symbol Values min typ max IL6(SC) 140 130 120 105 95 85 75 70 65 47 46 45 27 27 27 3.5 170 --130 --100 --70 --40 --4.5 A VON(SC) --90 --55 --45 --28 --15 2.5 td(SC1) 350 650 1200 µs td(SC2) -- 2 -- µs VON(CL) 39 42 -- V 150 -- 175 10 --- °C K at Tj= 25, Vbb = 12 V unless otherwise specified Protection Functions 12) Short circuit current limit (pin 4, Tab to pin 1,2,6,7) 13) Short circuit current limit at VON = 6V 14) Tj =-40°C: Tj =25°C: =+150°C: Tj Short circuit current limit at VON = 12V Tj =-40°C: tm=170µs Tj =25°C: =+150°C: Tj 14 ) Short circuit current limit at VON = 18V Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 24V Tj =-40°C: tm=170µs Tj =25°C: Tj =+150°C: Short circuit current limit at VON = 36V 14) Tj =-40°C: Tj =25°C: Tj =+150°C: Short circuit shutdown detection voltage Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150°C IL12(SC) IL18(SC) IL24(SC) IL36(SC) min. value valid only if input "off-signal" time exceeds 30 µs Short circuit shutdown delay during on condition14) VON > VON(SC) Output clamp (inductive load switch off) 15) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis Tjt ∆Tjt Unit A A A A V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) not subject to production test, specified by design 15) See also figure 2b on page 12. 12) Infineon Technologies AG Page 5 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS 4.5 V kILIS IL = 35A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 10A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 2.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 0.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IIN = 0 (e.g. during deenergizing of inductive loads): Values min typ max -- 12500 Unit -- 11200 11000 11000 10500 10500 10800 10000 10000 10000 7000 8000 9000 12700 12600 12200 12700 12600 12200 12300 12500 13000 14000 14500 15000 14000 13500 12800 14300 14000 13300 17000 16500 15000 26000 24500 23000 -- 0 -- Sense current under fault conditions 17) VON>1V, typ Tj = -40...+150°C: IIS,fault 4.0 5.2 7.5 mA Tj = -40...+150°C: IIS,lim 4.0 6.0 7.5 mA 350 650 1200 µs Sense saturation current VON1V, Tj = -40...+150°C Current sense leakage current, IIN = 0 IIS(LL) -- 0.1 0.5 µA Current sense offset current, VIN = 0, IL ≤ 0 IIS(LH) -- 0.1 1 µA Minimum load current for sense functionality, IL(MIN) 50 -- -- mA -- 250 500 µs -- 50 100 µs 63 67 -- V VIN = 0, Tj = -40...+150°C Current sense settling time to IIS static after input current positive slope, 18) tson(IS) IL = 0 20 A, Tj= -40...+150°C Current sense settling time during on condition, 18) IL = 10 20 A, Tj= -40...+150°C tslc(IS) Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: VZ,IS 16) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design 17) Infineon Technologies AG Page 6 of 16 2003-Oct-01 Data sheet BTS 6144B/P Parameter and Conditions Symbol at Tj= 25, Vbb = 12 V unless otherwise specified Input Required current capability of input switch IIN(on) Tj =-40..+150°C: Input current for turn-off Tj =-40..+150°C: IIN(off) Infineon Technologies AG Page 7 of 16 Values min typ max Unit -- 1.4 2.2 mA -- -- 30 µA 2003-Oct-01 Data sheet BTS 6144B/P Truth Table Normal operation Overload 19) Short circuit to GND 20) Overtemperature Short circuit to Vbb Input Current level L H L H L H L H L H Output L H Z H Open load L = "Low" Level H = "High" Level level L H L H L L L L H H Current Sense IIS ≈0 (IIS(LL)) nominal ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) IIS,fault ≈0 (IIS(LL)) 3.5V (typ.) . See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS 20) Infineon Technologies AG Page 8 of 16 2003-Oct-01 Data sheet BTS 6144B/P Input circuit (ESD protection) Inductive and overvoltage output clamp + Vbb V bb V R bb ZD V VZ1 ON Z,IN V bIN OUT IN I PROFET IN VON is clamped to VON(Cl) = 42V typ V IN Overvoltage protection of logic part ESD-Zener diode: 67 V typ., max 15 mA; + Vbb Current sense output R IN Vbb Rbb ZD R bb V Z,IN V Z,IS Normal operation IN Logic V OUT V Z,IS IIS,fault PROFET IS IS R IIS V R IS IS R V V Z,VIS Signal GND IS VZ,IS = 67 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 67 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb − 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Infineon Technologies AG 9 of 16 2003-Oct-01 Data sheet BTS 6144B/P Reversave (Reverse battery protection) Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Infineon Technologies AG 10 of 16 2003-Oct-01 Data sheet BTS 6144B/P Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 µs). Inductive load switch-off energy dissipation E bb E AS Overload detection Fault Condition: VON > 1 V typ. V i L(t) V bb + V bb IN VO N PROFET OUT IS I OUT IN detection circuit Logic unit ELoad bb ZL RIS L { RL EL ER Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is Short circuit Short circuit is a combination of primary and secondary impedance’s and a resistance’s. EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: V 5uH bb OUT EAS= L SC IN IS IL·RL OUT(CL)| ) Maximum allowable load inductance for a single switch off R SC L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω IN SC V bb Z 1000 L L [m H ] Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: [uH] 15 ln (1+ |V PROFET 10mOhm I IL· L (V + |VOUT(CL)|) 2·RL bb L SC V bb : 16V 24V 18V 100 10 30V 1 10 5 0 ,1 R SC 0 0 100 200 300 [mOhm] 0 ,0 1 1 Infineon Technologies AG 11 of 16 10 I_ L [A ] 1 0 0 2003-Oct-01 Data sheet BTS 6144B/P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: IIN IIN VOUT 90% t on dV/dton IIL t off 10% IL VOUT dV/dtoff tslc(IS) t slc(IS) IIS Load 1 IIS IIS,faut / I IS,lim t Load 2 tson(IS) t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load: IIN VOUT VON(CL) IL IIS t Infineon Technologies AG 12 of 16 2003-Oct-01 Data sheet BTS 6144B/P Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. Figure 3a: Typ. current limitation characteristic [A] I L(SC) IIN 120 IL 100 Internal Switch off td(SC2) depending on the external impedance 80 VON 60 40 1V typ. 20 IIS V ON 0 0 V 10 20 ON(SC) 30 IL [V] k ilis In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. IS,fault t Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj VON(SC) IL(SC) IIS IIS,fault td(SC1) tm VOUT Auto Restart IIS I IS,fault tdelay(fault) t Shut down remains latched until next reset via input. Tj t Infineon Technologies AG 13 of 16 2003-Oct-01 Data sheet BTS 6144B/P Figure 4b: Overload Tj