BTS716G

Smart High-Side Power Switch BTS716G 6PDUW+LJK6LGH3RZHU6ZLWFK )RXU&KDQQHOV[PΩ 6WDWXV)HHGEDFN Product Summary Package 9EE $FWLYHFKDQQHOV 2QVWDWH5HVLVWDQFH 521 1RPLQDOORDGFXUUHQW ,/120 &XUUHQWOLPLWDWLRQ ,/6&U 2SHUDWLQJ9ROWDJH RQH PΩ $ $ 9 IRXUSDUDOOHO PΩ $ $ P-DSO-20 PG-DSO20 *HQHUDO'HVFULSWLRQ • • 1FKDQQHOYHUWLFDOSRZHU026)(7ZLWKFKDUJHSXPSJURXQGUHIHUHQFHG&026FRPSDWLEOHLQSXWDQG  GLDJQRVWLFIHHGEDFNPRQROLWKLFDOO\LQWHJUDWHGLQ6PDUW6,3026 WHFKQRORJ\ 3URYLGLQJHPEHGGHGSURWHFWLYHIXQFWLRQV $SSOLFDWLRQV • • • • —&FRPSDWLEOHKLJKVLGHSRZHUVZLWFKZLWKGLDJQRVWLFIHHGEDFNIRU9DQG9JURXQGHGORDGV $OOW\SHVRIUHVLVWLYHLQGXFWLYHDQGFDSDFLWYHORDGV 0RVWVXLWDEOHIRUORDGVZLWKKLJKLQUXVKFXUUHQWVVRDVODPSV 5HSODFHVHOHFWURPHFKDQLFDOUHOD\VIXVHVDQGGLVFUHWHFLUFXLWV %DVLF)XQFWLRQV • • • • • • • 9HU\ORZVWDQGE\FXUUHQW &026FRPSDWLEOHLQSXW ,PSURYHGHOHFWURPDJQHWLFFRPSDWLELOLW\(0& )DVWGHPDJQHWL]DWLRQRILQGXFWLYHORDGV 6WDEOHEHKDYLRXUDWXQGHUYROWDJH :LGHRSHUDWLQJYROWDJHUDQJH /RJLFJURXQGLQGHSHQGHQWIURPORDGJURXQG 3URWHFWLRQ)XQFWLRQV • • • • • • • •     6KRUWFLUFXLWSURWHFWLRQ 2YHUORDGSURWHFWLRQ &XUUHQWOLPLWDWLRQ 7KHUPDOVKXWGRZQ 2YHUYROWDJHSURWHFWLRQLQFOXGLQJORDGGXPSZLWKH[WHUQDO UHVLVWRU 5HYHUVHEDWWHU\SURWHFWLRQZLWKH[WHUQDOUHVLVWRU /RVVRIJURXQGDQGORVVRI9EESURWHFWLRQ (OHFWURVWDWLFGLVFKDUJHSURWHFWLRQ(6' 'LDJQRVWLF)XQFWLRQ • • • 9EE ,1 67 ,1 /RJLF &KDQQHO &KDQQHO ,1 67 /RJLF &KDQQHO &KDQQHO *1' 1 /RDG /RDG ,1 'LDJQRVWLFIHHGEDFNZLWKRSHQGUDLQRXWSXW 2SHQORDGGHWHFWLRQLQ2))VWDWH )HHGEDFNRIWKHUPDOVKXWGRZQLQ21VWDWH Data Sheet Block Diagram /RDG /RDG V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G )XQFWLRQDOGLDJUDP                 RYHUYROWDJH SURWHFWLRQ     ORJLF LQWHUQDO YROWDJHVXSSO\ ,1 9%% FODPSIRU LQGXFWLYHORDG   (6' WHPSHUDWXUH VHQVRU UHYHUVH EDWWHU\ SURWHFWLRQ 2SHQORDG GHWHFWLRQ     FXUUHQWOLPLW 287   JDWH FRQWURO  FKDUJH SXPS     /2$' FKDQQHO 67    ,1     *1'  control and protection circuit of channel 2 287                 ,1 control and protection circuit of channel 3 287 67 IN4    *1'        control and protection circuit of channel 4 287  Data Sheet 2 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Data Sheet Pin configuration Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance IN1 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal IN2 IN3 IN4 OUT1 Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the OUT2 max. short circuit current OUT3 OUT4 ST1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 ST3/4 open drain, low on failure GND1/2 Ground of chip 1 (channel 1,2) GND3/4 Ground of chip 2 (channel 3,4) 3 (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 • 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Parameter Symbol Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 6) Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 Ω, td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 Ω, Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C: Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 Ω one channel: IL = 3.3 A, EAS = 182 mJ, 0 Ω two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 Ω four parallel channels: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: Vbb Vbb Values Unit 43 36 V V IL VLoad dump3) self-limited 60 A V Tj Tstg Ptot -40 ...+150 -55 ...+150 3.6 1.9 °C ZL 21 25 30 mH VESD 1.0 4.0 8.0 kV -10 ... +16 ±0.3 ±5.0 ±5.0 V mA W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) 1) 2) 3) 4) 5) VIN IIN IIN IST Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 only for testing Data Sheet 4 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Parameter and Conditions Thermal resistance junction - soldering point6)7) junction – ambient6) @ 6 cm2 cooling area Symbol each channel: Rthjs Rthja one channel active: all channels active: Values min typ max Unit 17 ---- K/W Values min typ max Unit ----- --44 35 Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A each channel, Tj = 25°C: RON Tj = 150°C: two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: ----- 110 210 55 28 140 280 70 35 mΩ 2.3 3.3 4.7 2.6 3.7 5.3 ---- A -- -- 2 mA --- 100 100 250 270 µs 0.2 0.2 --- 1.0 1.1 V/µs V/µs see diagram, page 11 Nominal load current one channel active: IL(NOM) two parallel channels active: four parallel channels active: Device on PCB6), Ta = 85°C, Tj ≤ 150°C Output current while GND disconnected or pulled up8); IL(GNDhigh) Vbb = 32 V, VIN = 0, see diagram page 9 Turn-on time9) Turn-off time RL = 12 Ω Slew rate on 9) Slew rate off 9) 6) 7) 8) 9) IN IN to 90% VOUT: ton to 10% VOUT: toff 10 to 30% VOUT, RL = 12 Ω: dV/dton 70 to 40% VOUT, RL = 12 Ω: -dV/dtoff Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 Soldering point: upper side of solder edge of device pin 15. See page 14 not subject to production test, specified by design See timing diagram on page 12. Data Sheet 5 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified Values min typ max Unit Operating Parameters Operating voltage Undervoltage switch off10) Overvoltage protection12) I bb = 40 mA Standby current13) VIN = 0; see diagram page 11 Vbb(on) Tj =-40...25°C: Vbb(u so) Tj =125°C: Vbb(AZ) Tj =-40°C...25°C: Ibb(off) Tj =150°C: Tj =125°C: Off-State output current (included in Ibb(off)) IL(off) VIN = 0; each channel Operating current 14), VIN = 5V, IGND = IGND1 + IGND2, one channel on: IGND all channels on: Protection Functions15) Current limit, Vout = 0V, (see timing diagrams, page 12) Tj =-40°C: IL(lim) Tj =25°C: =+150°C: Tj Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) two,three or four parallel channels 5.5 --41 ---47 40 4.5 4.511) 52 V V ----- 9 --1 16 24 1611) 5 µA --- 0.5 1.9 0.9 3.3 mA --5 -9 -- 14 --- A --- 6.5 6.5 --- A -- 2 -- ms 41 47 52 V 150 -- -10 --- °C K V µA (see timing diagrams, page 12) Initial short circuit shutdown time Vout = 0V Tj,start =25°C: toff(SC) (see timing diagrams on page 12) VON(CL) Output clamp (inductive load switch off)16) at VON(CL) = Vbb - VOUT, IL= 40 mA Tjt ∆Tjt Thermal overload trip temperature Thermal hysteresis 10) 11) 12) 13) 14) 15) 16) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage falling below the lower limit of Vbb(on) not subject to production test, specified by design Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 9. Measured with load; for the whole device; all channels off Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) Data Sheet 6 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified Reverse Battery Reverse battery voltage 17) Drain-source diode voltage (Vout > Vbb) IL = - 2.0 A, Tj = +150°C -Vbb -VON Values min typ max Unit --- -600 32 -- V mV Diagnostic Characteristics Open load detection voltage V OUT(OL) 1.7 2.8 4.0 V Input and Status Feedback18) Input resistance RI 2.5 4.0 6.0 kΩ VIN(T+) VIN(T-) ∆ VIN(T) td(STon) -1.0 --- --0.2 10 2.5 --20 V V V —s td(STon) 30 -- -- —s td(SToff) -- -- 500 —s td(SToff) -- -- 20 —s IIN(off) IIN(on) 5 10 -35 20 60 µA µA VST(high) VST(low) 5.4 -- --- -0.6 V 1 (see circuit page 9) Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Status change after positive input slope19) with open load Status change after positive input slope19) with overload Status change after negative input slope with open load Status change after negative input slope19) with overtemperature Off state input current VIN = 0.4 V: On state input current VIN = 5 V: Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA: 17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 18) If ground resistors R GND are used, add the voltage drop across these resistors. 19) not subject to production test, specified by design Data Sheet 7 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 1 Chip 2 Normal operation Open load Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) L = "Low" Level H = "High" Level IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 ST1/2 ST3/4 L L H H L H L H L H X X L L H H Z H L H L H X X H H H H X X L X H L H X X L H L H X X X L H X X L L L L L X X Z H L L L X X L L L20) H L15) H H L L H L H L X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms 9 ,EE EE , ,1 , 67 9 9 21 9 21 /HDGIUDPH , ,1 ,1 9 ,1 967    9EE ,1 ,1 287 352)(7 &KLS 287 67 *1' , /  , / 9  5  , *1' 9 21 9 21 /HDGIUDPH , ,1 , ,1 , 67 9 287 ,1 9 ,1 967 9 287    ,1 287 352)(7 &KLS 287 67 *1'  , /  , / 9  5 *1' 9EE ,1 , *1' 287 9 287 *1' Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage. 20) L, if potential at the Output exceeds the OpenLoad detection voltage Data Sheet 8 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Input circuit (ESD protection), IN1 to IN4 Overvolt. and reverse batt. protection 9 ,1 5 , 9EE 5 67 ,1 (6'=' , , 9 5, = /RJLF , 5 67 67 *1' 287 9 = The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. *1' 5 *1' 6LJQDO*1' Status output, ST1/2 or ST3/4 67 Open-load detection, OUT1...4 (6' =' *1' /RDG*1' VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active 9 5 6721 5 /RDG OFF-state diagnostic condition: Open Load, if VOUT > 3 V typ.; IN low ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. 9 EE 5 (;7 Inductive and overvoltage output clamp, 2)) OUT1...4 9 9EE 9= /RJLF XQLW 9 287 2SHQORDG GHWHFWLRQ 21 6LJQDO*1' 287 GND disconnect  3RZHU*1' VON clamped to VON(CL) = 47 V typ. ,1 9EE 352)(7 287 67 *1' 9 EE 9 ,1 9 67 9 *1' Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Data Sheet 9 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G GND disconnect with GND pull up  Inductive load switch-off energy dissipation ( EE ,1 9EE ( $6 352)(7 287 ,1 67 *1' 9 9 EE 352)(7 287 / 67 9 ,1 67 9 Vbb disconnect with energized inductive load ,1 *1' *1' Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. KLJK (/RD 9EE ^ 5 (5 / Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, 9EE 352)(7 =/ (/ with an approximate solution for RL > 0 Ω: 287 EAS= 67 IL· L (V + |VOUT(CL)|) 2·RL bb OQ(1+ |V IL·RL OUT(CL)| ) *1' 9 Maximum allowable load inductance for a single switch off (one channel)4) EE For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 10) each switch is protected against loss of Vbb. / I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω ZL [mH]  Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.          IL [A] Data Sheet 10 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Typ. on-state resistance 521 I9EE7M; IL = 2 A, IN = high RON [mOhm] 7M ƒ&   ƒ&  ƒ&      Vbb [V] Typ. standby current ,EERII I7M; Vbb = 9...34 V, IN1,2,3,4 = low Ibb(off) [µA]                 Tj [°C] Data Sheet 11 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Timing diagrams All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4 Figure 2b: Switching a lamp: Figure 1a: Vbb turn on: ,1 ,1 ,1 9 EE 67 9 287 9 9 287 287 67RSHQGUDLQ , / 67RSHQGUDLQ W W Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling ,1 ,1 RWKHUFKDQQHOQRUP DORSHUDWLRQ 9287 ,  W on / G9GWRII , /OLP , G9GWRQ  W /6&U off W ,/ 67 RII6& W W Data Sheet Heating up of the chip may require several milliseconds, depending on external conditions 12 V1.0, 2007-05-13 Smart High-Side Power Switch BTS716G Figure 5a: Open load: detection in OFF-state, turn on/off to open load Open load of channel 1; other channels normal operation Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) ,1 ,1 ,, 9287 // [,/OLP , W 67 , / /6&U 67 RII6& —V —V W ST1 and ST2 have to be configured as a 'Wired OR' function ST1/2 with a single pull-up resistor. Figure 6a: Status change after, turn on/off to overtemperature Overtemperature of channel 1; other channels normal operation Figure 4a: Overtemperature: Reset if Tj