DDB6U50N16W1RBPSA1

DDB6U50N16W1R EasyBRIDGE module Preliminary datasheet EasyBRIDGE module with chopper configuration Features • Electrical features - VCES = 1200 V - IC nom = 50 A / ICRM = 100 A - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - Solder contact technology - Rugged mounting due to integrated mounting clamps Potential applications • • • • Auxiliary inverters Air conditioning Motor drives Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Datasheet 2 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 2.5 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 4 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 6 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G Note: 2 Table 3 g Values Unit Tvj = 25 °C 1200 V TH = 85 °C 50 A 100 A ±20 V The current under continuous operation is limited to 30A rms per connector pin. IGBT-Chopper Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet 24 3 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 2 IGBT-Chopper Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Datasheet tr tdoff tf Eon Eoff ISC Tvj = 25 °C Tvj = 25 °C 0.042 Tvj = 125 °C 0.045 Tvj = 175 °C 0.046 Tvj = 25 °C 0.036 Tvj = 125 °C 0.040 Tvj = 175 °C 0.043 Tvj = 25 °C 0.270 Tvj = 125 °C 0.350 Tvj = 175 °C 0.370 Tvj = 25 °C 0.110 Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 Tvj = 25 °C 4.47 Tvj = 125 °C 5.2 Tvj = 175 °C 5.67 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 5.1 Ω, dv/dt = 2900 V/µs (Tvj = 175 °C) Tvj = 25 °C 3.36 Tvj = 125 °C 5.25 Tvj = 175 °C 6.45 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 190 tP ≤ 7 µs, Tvj = 175 °C 180 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5.1 Ω, di/dt = 850 A/µs (Tvj = 175 °C) 4 0.0062 mA 100 nA µs µs µs µs mJ mJ A 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 3 Diode, Chopper Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 3 per IGBT Max. 0.840 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Chopper Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 25 A 50 A Tvj = 125 °C 72.5 A²s Tvj = 175 °C 63 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy Datasheet Typ. Unit VF IRM Qr Erec IF = 25 A, VGE = 0 V Typ. Tvj = 25 °C 1.83 Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 21.6 Tvj = 125 °C 25.3 Tvj = 175 °C 27.6 IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.89 Tvj = 125 °C 3.53 Tvj = 175 °C 4.62 IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.62 Tvj = 125 °C 1.3 Tvj = 175 °C 1.74 5 Unit Max. V A µC mJ 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 4 per diode Typ. Unit Max. 1.85 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 85 A IFSM tP = 10 ms Tvj = 25 °C 500 A Tvj = 150 °C 400 Tvj = 25 °C 1250 Tvj = 150 °C 800 Surge forward current I2t - value Table 8 I2t tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 50 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj, op Datasheet A²s Tvj = 150 °C per diode -40 6 Typ. Unit Max. 0.96 V 1 mA 1.11 K/W 150 °C 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 5 Characteristics diagrams 5 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBTChopper IC = f(VCE) RGoff = 5.1 Ω, VGE = ±15 V, Tvj = 175 °C transfer characteristic (typical), IGBT-Chopper IC = f(VGE) VCE = 20 V 120 100 110 90 100 80 90 70 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 200 400 600 800 1000 1200 1400 5 output characteristic (typical), IGBT-Chopper IC = f(VCE) VGE = 15 V 7 8 9 10 11 12 13 output characteristic (typical), IGBT-Chopper IC = f(VCE) Tvj = 175 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 Datasheet 6 0.5 1.0 1.5 2.0 2.5 3.0 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 5 Characteristics diagrams transient thermal impedance , IGBT-Chopper Zth = f(t) forward characteristic of (typical), Diode, Chopper IF = f(VF) 10 50 45 40 35 1 30 25 20 0.1 15 10 5 0.01 0.001 0 0.01 0.1 1 0.0 10 transient thermal impedance , Diode, Chopper Zth = f(t) 0.5 1.0 1.5 2.0 2.5 forward characteristic of (typical), Diode, Rectifier IF = f(VF) 10 100 90 80 70 1 60 50 40 0.1 30 20 10 0.01 0.001 Datasheet 0 0.01 0.1 1 0.0 10 8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 5 Characteristics diagrams transient thermal impedance , Diode, Rectifier Zth = f(t) 10 1 0.1 0.01 0.001 Datasheet 0.01 0.1 1 10 9 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 6 Circuit diagram 6 Circuit diagram Figure 2 Datasheet 10 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module 7 Package outlines 7 Package outlines Infineon Figure 3 Datasheet 11 0.10 2021-07-30 DDB6U50N16W1R EasyBRIDGE module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-07-30 Initial version Datasheet 12 0.10 2021-07-30 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-07-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA699-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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